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Spatially resolved Raman
spectroscopy on single- and
few-layer grapheneD. Graf, F. Molitor, and K. Ensslin
Raman on graphene
Spectral resolution
Spatial resolution
Solid State Physics Zürich
C. Stampfer, A. Jungen, and C. Hierold, Micro and Nanosystems, ETH Zürich
L. Wirtz, Institute for Electronics, Microelectronics, and Nanotechnology, Lille
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Ref.: Ludger Wirtz and Angel Rubio, Solid State Communications 131, 141 (2004)
Phonon spectrum of graphite
- does the phonon spectrum depend on the number of layers ?
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Raman spectrum of graphite
- does the phonon spectrum depend on the number of layers ?
EL=2.33eV
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Raman spectrum of graphite
kK
phonon
at point, k~0
G, overtone G’
(1582 cm-1)
Single-resonant
EL=2.33 eV
kK
phonon
close to K point, k>0
elastic scattering D
(~1350 cm-1)
kK
2 phonon
close to K point, k>0
D‘ (~2700 cm-1)
Double-resonant
EL=2.33eV
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Spatial resolution: AFM
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Raman spectra of single-
and double layer graphene
1 μm1
12
SiO2
1
2
Scanning force microscope
1 μm
Scanning confocal
Raman spectroscopy:- Laser excitation of 532 nm/
2.33 eV
- Spot size:
D’G
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Raman mapping:
intensity of G-line
1 μm1
12
SiO2
1
2
Scanning force microscope
1 μm
Scanning confocal
Raman spectroscopy:- Laser excitation of 532 nm/
2.33 eV
- Spot size:
two layers have higher G-line intensity, slightly different peak position
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Raman mapping:
intensity of G-line
1 μm1
12
SiO2
1
2
Scanning force microscope
1 μm
Scanning confocal
Raman spectroscopy:- Laser excitation of 532 nm/
2.33 eV
- Spot size:
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Raman mapping:
position of G-line
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Raman spectra of single-
and double layer graphene
1 μm1
12
SiO2
1
2
Scanning force microscope
1 μm
Scanning confocal
Raman spectroscopy:- Laser excitation of 532 nm/
2.33 eV
- Spot size:
D’G
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Raman mapping:
FWHM of the D‘ line
1 μm1
12
SiO2
1
2
Scanning force microscope
1 μm
Scanning confocal
Raman spectroscopy:- Laser excitation of 532 nm/
2.33 eV
- Spot size:
two layers have broader G-line, different peak position
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Raman mapping:
FWHM of the D‘ line
1 μm1
12
SiO2
1
2
Scanning force microscope
1 μm
Scanning confocal
Raman spectroscopy:- Laser excitation of 532 nm/
2.33 eV
- Spot size:
two layers have broader G-line, different peak position
Raman: FWHM of D‘ line
1 μm
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D‘ line for single layer graphene
Related work: A.C. Ferrari et
al., cond-mat/0606284
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D‘ line for double layer graphene
Related work: A.C. Ferrari et
al., cond-mat/0606284
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Detecting single layer graphene
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What about the D-line?
1 μm1
12
SiO2
1
2
Scanning force microscope
1 μm
Scanning confocal
Raman spectroscopy:- Laser excitation of 532 nm/
2.33 eV
- Spot size:
D’G
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Raman mapping:
intensity of the D line
kK
phonon
close to K, M point, k>0
Momentum restoring:
elastic scattering D
Double-resonant 1) Crystallite grain size,
symmetry breaking
[Tuinstra and Koenig, 1970]
2) Defects, disorder in general
[Y. Wang et al, 1990]
Scanning force microscope
1 μm1
12
SiO2
Raman: Integrated D line intensity
1 μm
Symmetry breaking
and defects
at edges and
boundaries,
not within the flake.
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Raman mapping:
position of D-line
1 μm1
12
SiO2
1
2
Scanning force microscope
1 μm
Scanning confocal
Raman spectroscopy:- Laser excitation of 532 nm/
2.33 eV
- Spot size:
G
D
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Raman mapping:
intensity of G-line
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Raman mapping:
relative intensity of G/D‘-line
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Conclusions Experiment:
Davy Graf,
Françoise Molitor,
and Klaus Ensslin
Solid State Physics,
ETH Zürich, Switzerland
Christoph Stampfer,
Alain Jungen,
and Christofer Hierold
Micro and Nanosystems,
ETH Zürich, Switzerland
Theory:
Ludger Wirtz
Institute for Electronics,
Microelectronics, and
Nanotechnology (IEMN),
59652 Villeneuve d'Ascq,
France
Raman: FWHM D‘
Raman: Intensity D
• Raman spectroscopy:
an alternative to scanning
force microscopy
• Monolayer sensitivity
(single to double layer)
• Defects/symmetry breaking
at the edge (not within the
flakes)
D. Graf et al., cond-mat/0607562, submittedRelated work: A.C. Ferrari et al., cond-mat/0606284,
A. Gupta et al., cond-mat/0606593