driving power leds and standard leds with pfm ... power leds and standard leds with pfm controller...
TRANSCRIPT
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
E910.26
1
Driving PowEr LEDS AnD STAnDArD LEDS wiTH PFM ConTroLLEr
general Description
Features
Applications
The PFM controller family 910.24/.25/.26 are flexible, easy to use switched mode power supplies. Low standby current, very wide input voltage range make them suitable for applications in automotive and industrial environment.
An advanced PFM control scheme gives these devices the benefits of PWM converters with high efficien-cy for heavy loads, while using very low operating current for light loads to maintain excellent behaviour with output load variation.
ÿ Supply voltage range VS 3.0V to 60Vÿ Up to 90% efficiencyÿ 40µA standby currentÿ 180µA circuit operating currentÿ Adjustable output voltage ≥ 1,22Vÿ Up to 300kHz switching frequencyÿ Improved current-limited PFM control schemeÿ High current driver for external MOSFETÿ Under-voltage lockout and thermal shutdownÿ -40°C to +125°C operating temperatureÿ SO8 package
ÿ LED driving applicationsÿ 14V, 28V or 42V automotive systemsÿ Minimum component DC-DC converters
Scope
This application note provides information, hints and complete schematics for driving low and high power LED Applications with 910.24/.26 SMPS familiy.
VINP = 4V ... 60V
E910.26
MDRV
ISEN
VSM
VFB
ON
VIN
AGND
PGND
R1
R4 C2M1
C5
R2
C3 C4
D1
L1
L2
LED Cluster
C1
R3
/28
E910.26
2
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
1234
8765
PGNDAGNDISENVFB
MDRVVSMVSON
Package Pin out
/28
Pin Description
Pin-No. Name Typ 1) Description
1 PGND S Driver power ground pin. Connect pin to the current sense resistor, the (-) terminal of the input capacitor and the (-) terminal of the out-put capacitor. Due to high currents, and high frequency operation of the IC, a low impedance circuit ground plane is highly recommended
2 AGND S Analog ground pin. This pin provides a clean ground for the control-ler circuitry: The output voltage sensing resistors should be con-nected to this ground pin. This pin is connected to the IC substrate. Connect to the (-) terminal of the output capacitor
3 ISEN AI Current sense input pin. Voltage generated across an external sense resistor is fed into this pin. Filters extensive high-frequency noise
4 VFB AI Positive feedback pin. Connect to SMPS output via external resistor divider to set output voltage and is referenced to 1.22V. For best sta-bility, keep VFB lead as short as possible and VFB stray capacitance as small as possible
5 ON DI Switch ON input. Tie this pin to ground to force the IC into idle mode. A voltage of VSM or higher switches the controller in operat-ing mode
6 VS S Main supply input. Filters out high-frequency noise with a 100nF ce-ramic capacitor placed close to the pin to PGND
7 VSM A Internal 5V regulator output. The driver and all control circuits are powered from this voltage. Decouple this pin to PGND with a mini-mum of 4.7µF tantalum and 100nF ceramic capacitors
8 MDRV AO Drive output. Drives the gate of the external MOSFET between PGND and VSM. Connect the external MOSFET via a damping resis-tor to this pin
1) D = digital, A = Analog, S = Supply, I = Input, O = Output, HV = High Voltage (max. 40V)
3
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
In this application note three schematics will be described driving Power LED‘s and furthermore one schematic for driving standard LED‘s.
/28
overview of discussed schematics
Circuit 1: ÿ 5 white power LED with IF = 350mA ÿ 9V to 20V input voltage range ÿ SEPIC transformer ÿ -40°C to +85°C
Circuit 2: ÿ 5 white power LED with IF = 350mA ÿ 6V to 20V input voltage range ÿ separate SEPIC chokes ÿ -40°C to +85°C
Circuit 3: ÿ 4 white power LED with IF = 700mA ÿ 6V to 20V input voltage range ÿ separate SEPIC chokes ÿ -40°C to +85°C
Circuit 3b: ÿ 4 white power LED with IF = 700mA ÿ as above ÿ dimming capability 10% to 100%
Circuit 4: ÿ 24 coloured standard LED with IF = 60mA ÿ 9V to 36V input voltage range ÿ Step Up topology ÿ -40°C to +85°C
Disclaimer
The components used in our simulations are especially designed to deliver meaningful results during develop-ment of switched mode power supplies. They are the basis for fast calculation of the circuits behaviour and give a good view to functionality and dependencies of component changes - in values or quality. Nevertheless the model based simulation does not show exactly the natural behaviour of a circuit board.Therefore the user of all ELMOS products is in charge for a save module and product development including among other things prototyping, measurements and qualification procedures. Additionally the customer is in charge for observing all security and protection standards and laws.
E910.26
4
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
/28
Circuit 1
VBAT9V to 20V
D_reserve
ES2D
E910.26
MDRV
ISENVSM
VFBONVIN
AGND
PGND
R_snubber270 *
R_sense0.047
R_damping
4.7
C_snubber820p *
C_out_1220μF
ZL, 35V
C_out_2150μF
ZL, 35V
M_powerSUD40N06-25L
C_filter_1100n
C_filter_2100n
C_filter_4220n
C_filter_310n
C_input470μF
ZL, 25V
C_bat470µFZL, 25V
L0=47μHRDC=0.10L_EMC_1
R_LED_Current3.6
5x18R (parallel)
Operating Frequencyapprox. 120kHz
Fault
R_pullup10k
4µ7 100n
BC547B
Q_Fault
FB1D_rec
ES1D
22µH *L1
L222µH *
SMFBEMCSimple Bead
P1N970AD_safety
24V, 50mW
R_safety
1k
D1
D2
D3
D4
D5
LED Cluster
C_sepic330µFZL, 25V
1k
VOUT
100n
350mA
Both SEPIC chokes are build on one ferrite core, EF12.6, as described below. Therewith a compact, electrical ad-vantageous and cheap solution can be realised.
In the working range of 9V to 20V the output current through the LED string is controlled and regulated to 350mA. With a battery voltage below about 8V the LED current starts decreasing as shown in figure 1.1. The working frequency of the PFM converter will be about 120kHz at an input voltage of 12V. In case of a broken LED string, the zener diode will clamp the output voltage to an unperilous level. The fault signal is true (high) when the feedback voltage is too low.
The converter shown in figure one supplies the power for five white power LED‘s in series connection driven with a constant current of 350mA.
5
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
Inductivity Technical specifications Name ProducerL_EMC_1 47µH Ms85 Neosid
FB1 742 792 411 WürthU_choke_1 2x22µH EF12.6
L1 L2
N11
N12
N21
N22
SEPiC - Choke
L1 = L2 = 22µH +/- 15%Core: EE13/7/4 (EF12.6)Material: N27 or N87 (EPCOS)Central Air Gap: 0.30mmCoil Former with 8 PinsN11=N12=N21=N22= 19 TurnsWire: 0.35mm Cul
Description
The SEPIC choke consists of four windings on the same standard core of ferrite material. Below you find the spec-ification suitable for building such a choke. Of course choke suppliers can build the transformer based on this specification.
/28
The converter uses a SEPIC topology. The current loaded into the choke is determined by the resistor R_sense. The snubber network is used to remove HF noise generated during switching the FET. Two safety parts, D_safety and R_safety are needed to protect the system against open load faults. Because the feedback path VFB controls the output current which in case of a broken wire is zero, the converter will try to increase Vout to infinity what will cause overvoltage at the C_out capacitors.The fault detection uses Q_fault as a simple voltage comparator. In case VFB is higher than Vth of Q_fault its output is low signalling „pass“. With an open load the current through R_LED_current will be zero and Q_fault will close, signalling high which is fault at the diagnostic line.
Components
All electrolytic capacitors used in the schematic are of the ZL-series of Rubicon. For inductances see table below.The snubber network strongly depends on components and layout. The given values are suitable for an example application and must be adapted to the final module. Also the R_damping depends on the used FET type and the layout. It might be necessary to modify or remove it.
E910.26
6
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
Simulation results
figure 1.1
Figure 1.1 shows the system behaviour in the moment of first battery contact and the following startup behav-iour. The LED voltage and the the fault signal indicating the current being roughly in specification is shown.
In figure 1.2 the LED current is plotted and within about 15ms it reaches the target level.
figure 1.2
figure 1.3
/28
7
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
/28
Figure 1.3 shows the current through the chokes. In the first few ms the current reaches nearly 12A which may not cause the core to go into saturation.
After the startup is finished the following curves can be found:
figure 1.4
Here you see the LED current which has a small ripple and some noise resulting from parasitic components in the chokes, caps, and the FET. They can be eliminated by using appropriate filter elements at input and output side such as mentioned in the schematic.
figure 1.5
This figure shows the current through the SEPIC chokes. Continuous current mode is used leading to lower EMI and better efficiency of the system. The battery current is about 650mA DC at 12V into the filter elements.
The following figures will give important information about the power dissipation in the FET, the output diode and the reverse polarity diode, followed by graphs about the RMS current stress in the FET, the chokes and the capacitors.
E910.26
8
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
figure 1.6
figure 1.7
figure 1.8
There is a safe failure behaviour which can be adapted to the users needs by changing just one component: the value of the zener diode. This is a very easy way to detect a fault and protect the system against damage in case of an open load condition. The other fault mechanism, a shorted LED, cannot be detected so easy. It would be necessary to measure the output voltage in a kind of learning phase where the Vout vs. temperature as well as versus LED device variations if Vf must be taken into account and must be separated from an error condition. Tolerances in the sum of all LEDs Vf over temperature are very big compared to the voltage change caused by one failing LED. For that reason there is currently no planning for a detection system for that failure.
/28
9
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
The next graphs are to explain the system behaviour in case of an open load failure.
figure 1.9 The error occurs
figure 1.10 The fault signal is activated
figure 1.11 The output voltage increases up to zener voltage of D_safety
figure 1.13 The FET stopps switching
/28
E910.26
10
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
figure 1.14
As mentioned above the LED current starts decreasing with an input voltage below about 9V which can be seen in the following plot. But current only decreases by about 10% which in many cases is not very critical due to the logarithmic light sensitivity of human eyes.
figure 1.15
An important fact is that current through the chokes and Csepic as well as from the battery increases signifi-cantly with decreasing input voltage. That is of course due to the converters natural behaviour as being a power converter delivering constant output-power and showing a negative input impedance to the supply system.
figure 1.16
/28
To give an impression of what happens during ignition phase of the vehicles engine as well as a principle view to the behaviour in the input voltage range, the next graphs will illustrate this scenario. The battery voltage, plotted green in figure 1.14 drops down to 6V. The converters input voltage follows with a delay due to the input caps.
11
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
figure 1.17
/28
Finally an impression of the noise spectrum to be expected is given. The conducted disturbances fulfill the CIS-PR25 requirements. These are simulation results and therefore may vary from the final results which are depend-ing on the quality of all the components on the pcb as well as on the layout.
E910.26
12
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
/28
Circuit 2
VBAT6V to 20V
D_reserve
ES2D
E910.26
MDRV
ISENVSM
VFBON
VIN
AGND
PGND
R_snubber270 *
R_sense0.039
R_damping
4.7
C_snubber820p *
C_out_1220μF
ZL, 35V
C_out_2150μF
ZL, 35V
M_powerSUD40N06-25L
C_filter_1100n
C_filter_2100n
C_filter_4220n
C_filter_310n
C_input470μF
ZL, 25V
C_bat470µFZL, 25V
L0=47μHRDC=0.10L_EMC_1
R_LED_Current3.6
5x18R (parallel)
Operating Frequencyapprox. 120kHz
Fault
R_pullup10k
4µ7 100n
BC547B
Q_Fault
FB1D_rec
ES1D
47µHRDC=0.12
47µHRDC=0.12
L1
L2
SMFBEMCSimple Bead
P1N970AD_safety
24V, 50mW
R_safety
1k
D1
D2
D3
D4
D5
LED Cluster
C_sepic330µFZL, 25V
1k
VOUT
100n
350mA
The SEPIC chokes are realised as two standard parts for easy purchase and developing purpose.
In the working range of 6V to 20V the output current through the LED string is controlled and regulated to 350mA. With a battery voltage below about 6V the LED current starts decreasing as shown in figure 2.1. The working frequency of the PFM converter will be about 80kHz at an input voltage of 12V.
Description
The converter is similar to the one used in circuit 1. The component values have changed to match the require-ments of lower input voltage.
This converter shown in figure two also supplies the power for five white power LED‘s in series connection driven with a constant current of 350mA but in contrast to the first one it is designed to work with lower input voltage: 6V to 20V.
13
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
Inductivity Technical specifications Name ProducerL_EMC_1 47µH Ms85 Neosid
L1 47µH Ms95a NeosidL2 47µH Ms95a NeosidFB1 742 792 411 Würth
In the following figures will illustrate the output current and choke currents during ignition phase.
figure 2.1
As mentioned above the LED current starts decreasing with an input voltage below about6V which can be seen in the following plot. But current only decreases a few percent which in many cases may not be very critical.
figure 2.2
/28
Components
All electrolytic capacitors used in the schematic are of the ZL-series of Rubicon. For inductances see table below.
E910.26
14
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
figure 2.3
/28
An important fact is that current through the chokes and Csepic as well as from the battery increases signifi-cantly with decreasing input voltage. That is of course due to the converters natural behaviour as being a power converter delivering constant output-power and showing a negative input impedance to the supply system.
15
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
figure 2.4
Finally an impression of the noise spectrum to be expected is given. The conducted disturbances fulfill the CIS-PR25 requirements. These are simulation results and therefore may vary from the final results which are depend-ing on the quality of all the components on the pcb as well as on the layout.
/28
E910.26
16
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
Inductivity Technical specifications Name ProducerL_EMC_1 10µH Ms85 Neosid
L1 22µH Ms95a Neosid
L2 22µH Ms95a NeosidL_EMC_2 10µH Ms85 Neosid
Description
The SEPIC chokes are realised as two standard parts for easy purchase and developing purpose.
In the working range of 6V to 20V the output current through the LED string is controlled and regulated to 350mA. With a battery voltage below about 6V the LED current starts decreasing as shown in figure 2.1. The working frequency of the PFM converter will be about 110kHz at an input voltage of 12V.
Circuit 3
VBAT6V to 20V
D_reserve
ES3D
E910.26
MDRV
ISENVSM
VFBONVIN
AGND
PGND
R_snubber270 *
R_sense0.022
R_damping
4.7
C_snubber820p *
C_out_1470μF
ZL, 25V
C_out_2220μF
ZL, 25V
M_powerSUD40N06-25L
C_filter_1100n
C_filter_2100n
C_filter_4220n
C_filter_310n
C_input470μF
ZL, 25V
C_bat470µFZL, 25V
L0=10μHRDC=0.10L_EMC_1
R_LED_Current1.743
(10x18R+1x56R)
Fault
R_pullup10k
4µ7 100n
BC547B
Q_Fault
L_EMC_2D_rec
ES2D
L0=22µHRDC=0.10
L0=22µHRDC=0.12
L1
L2
L0=10µHRDC=0.15
P1N968AD_safety
20V, 50mW
R_safety
1k
D1
D2
D3
D4
LED ClusterC_sepic470µFZL, 25V
1k
VOUT
100n
700mA
R_spike_filter*
C_spike_filter*
/28
This converter shown in figure three supplies the power for four white power LED‘s in series connection driven with a constant current of 700mA. Also this one is designed to work with lower input voltage: 6V to 20V.
The converter is similar to the one used in circuit 1. The component values have changed to match the require-ments of lower input voltage.
Components
All electrolytic capacitors used in the schematic are of the ZL-series of Rubicon. For inductances see table below.
17
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
/28
The following graphs will illustrate the component requirements regarding current stress during ignition phase.
The RMS currents will be L1= 1.6A, L2= 1.1A, Cinput= 800mA, Csepic= 1.3A, Coutput= 1.4A
figure 3.2
figure 3.3
As mentioned above the LED current starts decreasing with an input voltage below about 6V which can be seen in the following plot. But current only decreases a few percent which in many cases may not be very critical.
An important fact is that current through the chokes and Csepic as well as from the battery increases signifi-cantly with decreasing input voltage. That is of course due to the converters natural behaviour as being a power converter delivering constant output-power and showing a negative input impedance to the supply system.
figure 3.4
E910.26
18
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
Finally an impression of the noise spectrum to be expected is given. The conducted disturbances fulfill the CIS-PR25 requirements. These are simulation results and therefore may vary from the final results which are depend-ing on the quality of all the components on the pcb as well as on the layout.
figure 3.5
/28
19
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
Circuit 3b
R139k
R_spike_filter
C_spike_filter
*
*
D31N4148
+-
57
6
IC2b
+-
48
21
3
IC2a
VSM
GND
C11µ
C21µ
C31µ
GND GND
PWM Input100k
R5
100k
R2
D2
R3 10k
10k
R4 10k
R6 39k
1N41
48
D1
1N4148
VBAT D_reserve
ES3D
E910.26
MDRV
ISENVSM
VFBON
VIN
AGND
PGND
R_snubber270 *
R_sense0.022
R_damping
4.7
C_snubber820p *
C_out_1470μF
ZL, 25V
C_out_2220μF
ZL, 25V
M_powerSUD40N06-25L
C_filter_1100n
C_filter_2100n
C_filter_4220n
C_filter_310n
C_input470μF
ZL, 25V
C_bat470µFZL, 25V
10μHRDC=0.10L_EMC_1
4µ7 100n
L_EMC_2D_rec
ES2D
22µHRDC=0.10
22µHRDC=0.10
L1
L2
L0=10µHRDC=0.15
P1N968AD_safety
20V, 50mW
R_safety
1k
D1
D2
D3
D4
LED ClusterC_sepic470µFZL, 25V
VOUT
100n
700mA
R_LED_Current1.743
(10x18R+1x56R)
The PWM signal is used in two ways. First it is used as the ON signal to start the converter. In the main path the signal is converted into an analog voltage which is added to the current signal of the shunt resistor. The cir-cuit can be used for dimming in the range of about 10% to 100%. Below 10% the converter starts discontinuous mode which can be seen as blinking of the LEDs.With the same principle a temperature control unit can be build up using an NTC.
/28
This converter is exactly the same as circuit 3 with a dimming capability is beeing added.
E910.26
20
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
Circuit 4
The Step Up converter serves up to about 59V at the cluster output. It uses a standard choke many suppliers offer.
In the working range of 9V to 36V the output current through the LED string is controlled and regulated to 60mA. With a battery voltage below about 9V the LED current starts decreasing as shown in figure 2.1. The working frequency of the PFM converter will be about 29kHz at an input voltage of 9V and 60kHz at 27V. To make use of smaller chokes the 910.24 is used which offers an extended maximum ON time for the gate driver. That ensures that with lower battery voltage the choke can be loaded with the required amount of energy.
VBAT9V to 36V
D_reserve
ES1D
E910.24
MDRV
ISENON
VFBVSM
VIN
AGND
PGND
R_snubber330 *
R_sense150m
R_damping
4.7
C_snubber1n *
C_out_182μF
ZL, 63V
C_out_282μF
ZL, 63V
M_powerBUK9875-100A
C_filter_1100n
C_filter_2100n
C_filter_4220n
50mW68V
C_filter_310n
C_input100μF
ZL, 50V
C_bat100µFZL, 50V
4.7µF 100n
WE-PD4SL0=10μH
RDC=0.20L_EMC_1
WE-PD4LL_StepUpL0=100μHRDC=0.33
LED1
LED2
LED3
LED4
LED5
LED6
LED7
LED8
LED17
LED18
LED19
LED20
LED21
LED22
LED23
LED24
LED9
LED10
LED11
LED12
LED13
LED14
LED15
LED16
R_LED_Current20.76
33E//56E
FB1
FerriteBead
D_rec
ES1D
VOUT (42V to 59V)
R_safety60mA
1k
/28
This converter shown in figure four supplies the power for 24 coloured standard LED‘s in series connection driven with a constant current of 60mA.
21
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
Name Technical specifications Comment Producer
C_filter_1 100nF, 50V, 10%, X7R 1206, SMD EpcosC_bat 100µF, 50V. 74mOhm, 0,72Arms ZL-Series, 105°C RubyconC_filter_2 100nF, 50V, 10%, X7R 1206, SMD Epcos
C_filter_3 10nF, 50V, 10%, X7R 1206, SMD Epcos
C_input 100µF, 50V, 74mOhm, 0,72Arms ZL-Series, 105°C Rubycon
C_snubber 1nF, 1000V, 10%, NP0 1206, SMD Kemet
C_VSM_2 4.7µF,25V (Low ESR) Tantal, SMD Epcos
C_VSM_1 100nF, 50V, 10%, X7R 1206, SMD Epcos
C_output_1 82µF, 63V, 150mOhm, 0.68Arms ZL-Series, 105°C Rubycon
C_output_2 82µF, 63V, 150mOhm, 0.68Arms ZL-Series, 105°C Rubycon
C_filter_4 220nF, 25V, 10%, X7R 1206, SMD Epcos
L_EMC_1 10µH, 35MHz, 1.2A, 160mOhm WE-PD4S Würth
L_EMC_2 100µH, 8MHz, 1.2A, 330mOhm WE-PD4L Würth
L_FB1 742792411 Würth
R_snubber 330Ohm
R_damping 4.7Ohm
R_LED_Current 33 Ohm // 56 Ohm
R_sense 150mOhm
R_safety 1k
D_reverse ES1D
D_rec_1 ES1D
M_power BUK9875-100A Logic Level Philips Semi
U_E91024 E91024A ELMOS
/28
Components
All electrolytic capacitors used in the schematic are of the ZL-series of Rubicon. For inductances see table below.
E910.26
22
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
figure 4.1 behariour at VBAT = 9V
/28
Simulation results
In the following figures the output current and some interesting values can be seen with respect to input volt-age variations.
23
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
figure 4.2 behariour at VBAT = 27V
/28
E910.26
24
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
figure 4.3 behariour at VBAT = 36V
/28
25
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
/28
record of revisions
Chapter Rev. Change and Reason for Change Date Released1 Initial Revision 12.02.2007 TZIE/RL
E910.26
26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
/28
Contents
Scope ....................................................................................................................................................... . 1general Description ............................................................................................................................... . 1Features .................................................................................................................................................. . 1Applications ............................................................................................................................................ . 1Package Pin out ..................................................................................................................................... 2Pin Description ....................................................................................................................................... 2overview of discussed schematics ...................................................................................................... .3Disclaimer ............................................................................................................................................... .3Circuit 1...................................................................................................................................................... 4Description ............................................................................................................................................. .5Components ........................................................................................................................................... .5Simulation results .................................................................................................................................. 6Circuit 2.....................................................................................................................................................12Description ............................................................................................................................................ 12Components ........................................................................................................................................... 13Circuit 3.....................................................................................................................................................16Description ............................................................................................................................................. 16Components ........................................................................................................................................... 16Circuit 3b ................................................................................................................................................. 19Circuit 4................................................................................................................................................... 20Components ........................................................................................................................................... 21Simulation results .................................................................................................................................. 22record of revisions ................................................................................................................................ 25
27
E910.26
ELMOS Semiconductor AG Application Note QM-No.: 03AN0201E.00
wArning – Life Support Applications Policy
ELMOS Semiconductor AG is continually working to improve the quality and reliability of its products. Never-theless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing ELMOS Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an ELMOS Semiconductor AG Product could cause loss of human life, body injury or damage to property. In development your designs, please ensure that ELMOS Semiconductor AG products are used within specified operating ranges as set forth in the most recent product specifications.
general Disclaimer
Information furnished by ELMOS Semiconductor AG is believed to be accurate and reliable. However, no respon-sibility is assumed by ELMOS Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under anypatent or patent rights of ELMOS Semiconductor AG.
ELMOS Semiconductor AG reserves the right to make changes to this document or the products containedtherein without prior notice, to improve performance, reliability, or manufacturability .
Application Disclaimer
Circuit diagrams may contain components not manufactured by ELMOS Semiconductor AG, which are included as means of illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily given. The information in the application examples has been carefully checked and is believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such infor-mation does not convey to the purchaser of the semiconductor devices described any license under the patent rights of ELMOS Semiconductor AG or others.
Copyright © 2006 ELMOS Semiconductor AGReproduction, in part or whole, without the prior written consent of ELMOS Semiconductor AG, is prohibited.
/28
ELMoS Semiconductor Ag – Headquarters
Heinrich-Hertz-Str. 1 | 44227 Dortmund | Germany
Phone + 49 (0) 231 - 75 49 - 0 | Fax + 49 (0) 231 - 75 49 - 149
[email protected] | www.elmos.de
28/28