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    AM3423PAnalog Power

    December, 2005 - Rev. A

    PRELIMINARY

    Publication Order Number:

    DS-AM3423_A

    These miniature surface mount MOSFETs utilize a

    high cell density trench process to provide low

    rDS(on) and to ensure minimal power loss and heatdissipation. Typical applications are DC-DC

    converters and power management in portable and

    battery-powered products such as computers,

    printers, PCMCIA cards, cellular and cordless

    telephones.

    VDS(V) rDS(on)m() ID(A)42 @ VGS= -4.5V -5.7

    57 @ VGS= -2.5V -4.9

    80 @ VGS= -1.8V -4.1

    PRODUCT SUMMARY

    -20

    P-Channel 20-V (D-S) MOSFET

    Low r DS(on)provides higher efficiency and

    extends battery life

    Low thermal impedance copper leadframe

    TSOP-6 saves board space

    Fast switching speed

    High performance trench technology

    Notes

    a. Surface Mounted on 1 x 1 FR4 Board.

    b. Pulse width limited by maximum junction temperature

    Symbol Maximum Units

    VDS -20

    VGS 8

    TA=25oC -5.7

    TA=70oC -4.7

    IDM 20

    IS -1.7 A

    TA=25oC 2.0

    TA=70oC 1.3

    TJ, Tstg -55 to 150oC

    Continuous Source Current (Diode Conduction)a

    ABSOLUTE MAXIMUM RATINGS (TA= 25oC UNLESS OTHERWISE NOTED)

    Parameter

    Pulsed Drain Currentb

    VGate-Source Voltage

    Drain-Source Voltage

    Continuous Drain Currenta ID

    A

    Power Dissipationa PD

    Operating Junction and Storage Temperature Range

    W

    1

    2

    3 4

    5

    6

    Symbol Maximum Units

    t

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    AM3423PAnalog Power

    December, 2005 - Rev. A

    PRELIMINARY

    Publication Order Number:

    DS-AM3423_A

    Typical Electrical Characteristics

    Figure 2. On-Resistance Variation with

    Drain Current and Gate VoltageFigure 1. On-Region Characteristics

    Figure 4. On-Resistance Variation with

    Gate to Source Voltage

    Figure 3. On-Resistance Variation

    with Temperature

    Figure 6. Body Diode Forward Voltage Variation

    with Source Current and TemperatureFigure 5. Transfer Characteristics

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    AM3423PAnalog Power

    December, 2005 - Rev. A

    PRELIMINARY

    Publication Order Number:

    DS-AM3423_A

    Typical Electrical Characteristics

    Normalized Thermal Transient Junction to Ambient

    Figure 8. Capacitance CharacteristicFigure 7. Gate Charge Characteristic

    Figure 10. Single Pulse Maximum Power

    DissipationFigure 9. Maximum Safe Operating Area

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    AM3423PAnalog Power

    December, 2005 - Rev. A

    PRELIMINARY

    Publication Order Number:

    DS-AM3423_A

    Package Information

    TSOP-6: 6LEAD