dvanced Packaging Technologies for MiniaturizedModules

Vinayak Pandey

VP, Product Technology Marketing, STATS ChipPAC

Form Factor Performance

Integration Low Cost

Analog Package Requirements

Analog Package Trends

fcQFN – FCOL/MIS

QFN-dr/mr

2L WB laminate/ 1L(Single Metal Su

eWLB – 1L RDL

QFN

QFP1L WB - MIS

1/2L FC - MIS

MIS can be used for leaded/laminate wirebond & flip chip packaging

eWLB drives superior performance and integration

Flip chip

Wirebond

Single Metal Substrate

Flip Chip on LeadFrame

Molded Interconnect Substrate/system

Embedded Wafer Level Ball Grid Array

MIS (Molded Interconnect System/Substrate)

Carrier

4

Pre-mold compound

Finish plating: NiPdAu, NiAu, Cu+OSP

Surface finish(Cu+OSP / NiAu/ NiPdAu)

1LMIS substrate 4B 250x70mm (0.11mm thickness)

Cross section view

Routable

External lead

Trace

1L MIS Process Flow

OR

MIS Design & Application

1LMIS 3.5x4.5-28L

(PM Application)Package thickness: 0.55mm

Lead pitch: 0.4mm

Bumping pitch: 0.25mm

Bump structure: Cu pillar bump with tin cap

Bump height: 90um (65um copper + 25um solder)

Bump size: 110um

Bump material: Sn/Ag 1.8

Cross section

fcQFN-1L MIS 3.5x4.5-28L

No delaminationPost MSL 1 / TCT 1500 cycles / uHAST 4

3D MIS Packaging

Characteristics• Passive components• Multi-chip module• 3D MIS substrate• Large area metal and

partial fine line/space

AdvantagesSuperior electrical and thermal performance

High reliability performance

Cross section view of

3D MIS packagingFlip chip on 3D MIS

Passive components

mounted on package top

3D MIS package for wearable

communication device

fcMISStructure:

Substrate thickness 0.12mmMin. Bump Pitch : 90 umCu column interconnectMolded Underfill

Readout point Le

TC’B’ 1000x w/ MSL3

SATImage

O/S test Passed (

TC’B’ 1000x w/ MSL2aa

SATImage

O/S test Passed (

Reliability Results:

Structure:substrate thickness 0.11mmMin. Bump Pitch : 80 umCu column interconnectMolded Underfill

Conventional Fan-in WLP (WLCSP)

Interconnect is limited to die size

Compact package size

Higher performance

Lower cost than BGAs or laminate based

CSPs

Silicon die Silicon die

Fan-out WLP (eWLB

Interconnect is independent of d

• Small package size

• Dramatically higher I/O count

• Strong thermal & electrical perform

• Able to integrate die from diverse

silicon nodes

• Cost effective advanced package

Wafer Level Packaging

Silicon die

eWLB provides the o

performance solu

increased I/O densit

Fine Cu Plated RDL 5/5um LW/LS

10µm

Ultra Th~0.3mm with

Integration with discrete and RDL inductor

• Small form factor

• Increased performance

• 2.5D/3D integration

• Cost effective solution

Si

3-L R

eWLB Capabilities

FOWLP is a versatile technology platformsemiconductor industry’s evolution from designs to 2.5D interposers and 3D IC in

Single chip eWLBeWLL

Flip Chip eWLB

3D eWLB with Interposer 3D Face-to-F

2.5D / Extended eWLB

eWLB-PoP (1.5S)

Multi-chip

FOWLP/eWLB Evolution

FOWLP breaks into New Frontiers!

by-Side: Multi-die and SiP applicationsAnalog + Logic package level integration HVM from 2012)

Functional partitioning -scale side-by-side Multichip

Alternative solution of 2.5D Interposer

Thinner Profile System Integra

Wide Range of SiP Offerings

1.5S Inverted FOWLP, a Disruptive Solution

Assembly Summary:

MEMS• Individually bumped and singulated

ASIC• Individually singulated and reconstituted with thru-vias• Followed by backgrind, redistribution and singulation

Pre-stack: ASIC and MEMS modules pre-stack and reflow

MEMS

ASIC

Thank You