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EC101: BASIC ELECTRONICS (3-0-2:4)
1. Diode: Basic Diode Theory, Zener Diode, Photodiode, Light Emitting Diode, Varactor Diode, Schottky Diode, Half
Wave Rectifier Circuit, Full Wave Rectifier Circuit and Bridge Rectifier Circuit, Filtering Circuits (C, L, L-C &
π filters), Voltage Multipliers.
2. Transistor:
Transistor Theory, Transistor Action, Transistor Symbols, Common Collector, Common Emitter and Common
Base Configurations, Different Biasing Techniques, Concept of Transistor Amplifier.
3. Digital Electronics:
Boolean Algebra, Logic Gates, Combinational Circuits.
4. Electronic Communication:
Introduction to Radio Frequency Spectrum, Modulation, Need of Modulation, Different Types of Modulation,
Basic Circuits and Blocks of Modulation and Demodulation, Transmitters and Receivers, Application of
Modulation.
5. Electronic Instruments:
Cathode Ray Oscilloscope & Digital Storage Oscilloscope: Theory and Applications, Function Generator,
Power Supply, Digital Multimeter.
Suggested Practical:
1. I-V characteristics of forward biased P-N junction Diode.
2. Reverse characteristics of Zener Diode
3. Zener Diode as a reference Diode.
4. Half-wave rectifier using diode
5. Full-wave rectifier using diode.
6. Bridge rectifier.
7. Truth Table verification of Logic Gates.
8. Design of basic logic gates using NAND & NOR gates.
9. Input & output characteristics of BJT in CB mode.
10. Input & output characteristics of BJT in CE mode.
Text Books:
1. Basic Electronics, Chattopadhyay & Rakshit, New Age Publisher.
References:
1. Electronics Principles, Albert P. Malvino, Publisher: Tata McGraw-Hill
2. Electronics Devices, Thomas L. Floyd, Publisher: Pearson Education
3. Digital Principles & Applications, Albert P. Malvino, Publisher: Tata McGraw-Hill
4. Electronic Communication Systems, John Kennedy & William Devis, Publisher: Tata McGraw-Hill
NATIONAL INSTITUTE OF TECHNOLOGY
MEGHALAYA
Basic Electronics: Laboratory Manual 2015
CONTENTS
Sl No Name of Experiment Page No
1. To Study the V-I characteristics of Forward Biased PN junction diode. 1-3
2. To Study the Reverse characteristics of Zener diode. 4-6
3. To Study the working of a diode as half wave rectifier with and without filter. 7-9
4. To Study the working of a diode as Bridge rectifier with and without filter. 10-12
5. To Study the working of a diode as Bridge rectifier with and without filter. 13-15
6. To study the input and output characteristic of BJT in CB configuration. 16-19
7. To study the input and output characteristic of BJT in CE configuration. 20-23
8. Realization of Basic Logic Gates. 24-26
9. Realization of Basic Logic Gates using Universal Gates NAND and NOR. 27-28
EXPERIMENT NO-1 AIM: To Study the V-I character APPARATUS REQUIRED: SL No
Name of Component/Equi
1 Regulated DC power supp2 Digital Multimeter 3 PN Diode 4 Resistor 5 Breadboard 6 Connecting Wire THEORY:
p-n junction diode Forw
If a positive voltage is applied to
flow (depending upon the magni
Biased"
At the p-n junction, the "built-in"
When these two fields add, the re
of the original "built-in" electric
applied voltage is large enough, t
occurs at about 0.6 volts forward
the depletion region. Above 0.6 v
flows virtually unimpeded.
ristics of Forward Biased PN junction diode.
ipment Specification/Range
ply 0-30V,1A 15S IN4007 100 - -
ward characteristic:
o the p-type side and a negative voltage to the n-t
tude of the applied voltage). This configuration
" electric field and the applied electric field are i
esultant field at the junction is smaller in magnit
field. This results in a thinner, less resistive dep
the depletion region's resistance becomes neglig
d bias. From 0 to 0.6 volts, there is still considera
volts, the depletion region's resistance is very sm
Quantity
1 2 1 1 1 As per requirements
type side, current can
is called "Forward
in opposite directions.
tude than the magnitude
pletion region. If the
gible. In silicon, this
able resistance due to
mall and current
Calculation for current limiting resistance:
Where, V = Supply Voltage V, Imax =Maximum current rating for diode CIRCUIT DIAGRAM:
PROCEDURE: Forward Biased: 1. Make connections as per the circuit diagram. 2. Switch on the power supply. 3. Increase voltage from the power supply from 0V to 7V in step as shown in the observation table. 4. Measure voltage across diode and current through diode 5. Note down readings in the observation table. 6. Plot and draw the V-I characteristic of forward bias on the graph.
OBSERVATION TABLE: Forward Biased: SL.NO Supply Voltage V (Volt)
1 0 2 0.1 3 0.2 4 0.3 5 0.4 6 0.5 7 0.6 8 0.7 9 0.8
10 0.9 11 1.0 12 1.5 13 2.0 14 2.5 15 3.0 16 3.5
17 4.0 18 4.5 19 5.0 20 5.5 21 6.0 22 6.5 23 7.0
Expected Graph: CONCLUSION/RESULT: (Wriyou have solved them.)
Diode Voltage Vd (Volts) Diode Cu
ite your remarks or any difficulties faced during
rrent Id (mA)
the experiment and how
EXPERIMENT NO-2 AIM: To Study the Reverse char APPARATUS REQUIRED: SL No
Name of Component/Equi
1 Regulated power supply 2 Digital Multimeter 3 Zener diode 4 Resistor 5 Breadboard 6 Connecting Wire THEORY: Zener diodes are desi
varying the doping level, it is pos
to200V
A p-n junction diode normally do
increased, at a particular voltage
High current through the diode c
is series with it. Once the diode i
terminal whatever may be the cu
Zener diode is a P-N junction dio
in voltage regulators.
racteristics of Zener diode.
ipment Specification/Range Qu
0-30V,1A 1 15S 2 BZX83-C5V6 1 1K 1 - 1 - As
igned to operate in the breakdown region withou
ssible to produce Zener diodes with breakdown
oes not conduct when reversed biased. But if the
it starts conducting heavily. This voltage is call
an permanently damage it. To avoid high curren
is starts conducting, it maintains almost constant
rrent through it. That is, it has very low dynamic
ode, specially made to work in the breakdown re
uantity
s per the requirements
ut damage. By the
voltage form 2V
e reverse bias is
ed breakdown voltage.
nt, we connect a resistor
t voltage across its
c resistance. Hence a
egion. It is mainly used
Calculation for current limiting resistance:
Where, V = Supply Voltage V, Imax =Maximum current rating for Zener diode CIRCUIT DIAGRAM:
PROCEDURE: Reverse Biased: 1. Make connections as per the circuit diagram.
2. Switch on the power supply.
3. Increase voltage from the power supply from 0V to 24 V in step as shown in the observation table.
4. Measure voltage across diode and current through diode
5. Note down readings in the observation table.
6. Plot and draw the reverse biased characteristic on the graph.
OBSERVATION TABLE: Reverse Biased: SL.NO Supply Voltage V (Volts
1 0 2 1 3 2 4 3 5 4 6 5 7 6 8 7 9 8
10 9 11 10 12 11 13 12 14 13 15 14 16 15
17 16 18 17 19 18 20 19 21 20 22 21 23 22 24 23 25 24 Expected GRAPH:
CONCLUSION/RESULT: (Wriyou have solved them.)
s) Diode Voltage Vz (Volts) D
ite your remarks or any difficulties faced during
Diode Current Iz (mA)
the experiment and how
EXPERIMENT NO-3 AIM: To Study the working of a diode as half wave rectifier with and without filter. APPARATUS REQUIRED: SL No
Name of Component/Equipment Specification/Range Quantity
1 Transformer 12-0-12V, 500mA 1 2 Digital Multimeter 15S 1 3 PN diode IN4007 1 4 Resistor 1K 1 5 Capacitor 100uF 1 6 Breadboard - 1 7 Connecting Wire - As per requirements THEORY: A diode is a unidirectional conducting device, It conducts only when it anode is at higher
voltage w r t its cathode in a half wave rectifier circuit, during positive half cycle of the input, the diode
get forward biased and it conducts. Currents flows through the load resistor RL and voltage is developed
across it. During the negative half cycle of the input, the diode gets reversed biased. Now no current
(except the leakage current which is very small) flows. The voltage across the load resistance during this
period of input cycle is zero. Thus a pure ac signal is converted into a unidirectional signal. It can be
shown that:
i) Where, Vdc is the output voltage and Vm is peak ac voltage at the input of the rectifier.
ii) = 1.21
CIRCUIT DIAGRAM: WITHOUT FILTER
WITH FILTER:
PROCEDURE: 1. Make connections as per the circuit diagram.
3. Switch on the power supply.
4. Using DMM measured ac input voltage of the rectifier, ac and dc voltage at the output of the rectifier.
5. Using CRO measured the rectified output voltage.
6. Calculate the ripple factor and rectifier Efficiency.
7. Draw the input and output voltage waveform on the graph.
8. Connect the capacitor across the load resistor.
9. Measured the output voltage using DMM and CRO and note down the value.
10. Draw the output voltage waveform
OBSERVATION TABLE: WITHOUT FILTER:
WITH FILTER
SL.NO
Using DMM Using CRO Measured Measured
Ripple factor
Amplitude Calculated
Calculated Ripple factor
2
Sl No Using DMM Measured
(Volts) Measured
(Volts) Ripple factor
Ripple factor
THEORITICAL CALCULATI Average DC voltage at Average DC current at R.M.S value of load V R.M.S value of load Cu R.M.S value of AC com Without filter, Ripple factor With filter, Ripple factor, Rectifier Efficiency : 2
2
Expected Graph:
RESULT/ CONCLUSION: (Whow you have solved them.)
ION:
the load,
t the load,
oltage ,
urrent ,
mponent 2 2)
2 = 1.21
Write your remarks or any difficulties faced durinng the experiment and
EXPERIMENT NO-4 AIM: To Study the working of a APPARATUS REQUIRED: SL No
Name of Component/Equi
1 Transformer 2 Digital Multimeter 3 PN diode 4 Resistor 5 Capacitor 6 Breadboard 7 Connecting Wire THEORY: In a full-wave rectifi
transformer has a center-tap in it
the positive half-cycle of the inpu
forward biased and it conducts. T
resistor and a voltage is develope
biased and D1 is reverse biased.
flowing through the load resistor
obtained at the output is given as
i) Where, Vdc is th
of the ce
ii)
CIRCUIT DIAGRAM: WITHOUT FILTER
a diode as Bridge rectifier with and without filter
ipment Specification/Range
12-0-12V, 500mA 15S IN4007 1K 100uF - -
ier circuit there are two diodes, a transformer an
s secondary winding. It provides out-of-phase to
ut, the diode D2 is reverse biased and it does no
The current flowing through diode D1 also passe
ed across it. During the negative half-cycle, the d
Now current flow through diode D2 and load re
r passed in the same direction in both the half-cy
s:
he output voltage and Vm is peak ac voltage at t
enter tapped transformer.
= 0.482
r.
Quantity
1 1 2 1 1 1 As per requirements
d a load resistor. The
o the two diodes. During
t conduct. But D1 is
ed through the load
diode D2 is forward
esistor RL. The current
ycles. The dc voltage
the input of the rectifier
WITH FILTER: PROCEDURE: 1. Make connections as per the c
3. Switch on the power supply.
4. Using DMM measured ac inpu
5. Using CRO measured the recti
6. Calculate the ripple factor and
7. Draw the input and output volt
8. Connect the capacitor across th
9. Measured the output voltage u
10. Draw the output voltage wav
OBSERVATION TABLE: WITHOUT FILTER:
WITH FILTER:
SL.NO
Using DMM Measured Measured
Rip
Sl No Using Measured
(Volts) Measured
(Volt
ircuit diagram.
ut voltage of the rectifier, ac and dc voltage at th
ified output voltage.
d rectifier Efficiency.
tage waveform on the graph.
he load resistor.
using DMM and CRO and note down the value.
veform
Using C
pple factor
Amplitude Calculated
CalVrm
DMM
ts) Ripple factor Ripple factor
he output of the rectifier.
CRO lculated
ms (Volts) Ripple factor
2
THEORITICAL CALCULATI Average DC voltage at Average DC current at R.M.S value of load V R.M.S value of load Cu R.M.S value of AC com Without filter Ripple factor With filter Ripple factor, W Rectifier Efficiency =P
Expected Graph: RESULT/ CONCLUSION: (Whow you have solved them.)
ION:
the load,
t the load
oltage ,
urrent ,
mponent 2 2
) Where
Pdc/Pac
Write your remarks or any difficulties faced durinng the experiment and
EXPERIMENT NO-5 AIM: To Study the working of a diode as Bridge rectifier with and without filter. APPARATUS REQUIRED: SL No
Name of Component/Equipment Specification/Range Quantity
1 Transformer 12-0-12V, 500mA 1 2 Digital Multimeter 15S 1 3 PN diode IN4007 4 4 Resistor 1K 1 5 Capacitor 100uF 1 6 Breadboard - 1 7 Connecting Wire - As per requirements THEORY: CIRCUIT DIAGRAM: In a bridge rectifier circuit there are four diodes, a transformer and a load
resistor. When the input voltage is positive at point A, diodes D1 and D2 conduct. The current passed
through the Load resistor. During the other half of the input signal, the point A is negative with respect
to the point B. The diodes D3 and D4 conducts. The current passes through the load resistor in the same
direction as during the positive half-cycle. DC voltage is developed across the load. It can be proved that
the output dc voltage is given by:
i) Where, Vdc is the output voltage and Vm is peak ac voltage at the input of the rectifier
of the center tapped transformer.
ii) = 0.482 WITHOUT FILTER
A
B
WITH FILTER: PROCEDURE: 1. Make connections as per the circuit diagram.
3. Switch on the power supply.
4. Using DMM measured AC and DC voltage at the output of the rectifier.
5. Using CRO measured the rectified output voltage.
6. Calculate the ripple factor and rectifier Efficiency.
7. Draw the input and output voltage waveform on the graph.
8. Connect the capacitor across the load resistor.
9. Measured the output voltage using DMM and CRO and note down the value.
10. Draw the output voltage waveform
OBSERVATION TABLE: WITHOUT FILTER:
WITH FILTER
SL.NO
Using DMM Using CRO Measured
Vdc (Volts)
Measured Vac
(Volts)
Ripple factor = Vac/Vdc
Amplitude Vm
(Volts)
Calculated Vdc
(Volts)
Calculated Vrms
(Volts)
Ripple factor = (Vrms/ Vdc )2 -1
SL.NO
Using DMM Using CRO Measured Vdc (Volts)
Measured Vac (Volts)
Ripple factor = Vac/Vdc
Ripple factor =1/ (4 3 f C R)
A
B
THEORITICAL CALCULATI Average DC voltage at Average DC current at R.M.S value of load V R.M.S value of load Cu R.M.S value of AC com Without filter Ripple factor With filter Ripple factor, W Rectifier Efficiency =
Expected Graph:
RESULT/ CONCLUSION: (Whow you have solved them.)
ION:
t the load,
t the load
oltage,
urrent,
mponent 2 2
) Where
= Pdc/Pac
Write your remarks or any difficulties faced durinng the experiment and
EXPERIMENT NO-6 AIM: To study the input and output characteristic of BJT in CB configuration APPARATUS REQUIRED: SL No
Name of Component/Equipment Specification/Range Quantity
1 Dual Regulated power supply 0-30V,1A 1 2 Digital Multimeter - 3 3 Resistor 100
1K 1 1
4 Bipolar junction Transistor BC107 1 5 Breadboard - 1 7 Connecting Wire - As per requirements THEORY: A transistor is a three-terminal device. The three terminals are emitter, base and collector. In
common-base configuration, we make the Base common to both input and output. For normal operation,
the emitter-base junction is forward biased and the collector-base is reverse-biased.
The input characteristic is a plot between iE and vEB keeping voltage vCB constant. This
characteristic is very similar to that of a forward-biased diode. The input dynamic resistance is
calculated using the formula
at vce=constant
The collector current IC is less than, but almost equal to the emitter current. The current IE divides into IC
and IB. That is:
The Output characteristic curves are plotted between ic and vCB, keeping voltage iE constant. These curves are almost horizontal. This shows that the output dynamic resistance, defined below is very high.
at IE = constant
When the output side is open ( i.e., IE = 0), the collector current is not zero, but has a small (a few μA) value. This value of collector current is called collector reverse saturation current, ICBO.
At a given operating point, we define the dc and ac gains ( ) as follows:
dc current gain, dc =
ac current gain, = at vCB = constant.
CIRCUIT DIAGRAM:
PROCEDURE: Input characteristics (CB): 1. Connect the circuit for BJT in CB mode as per circuit diagram
2. Switch on the Power supply
3. Keep VCB at a constant value by varying VCC.
4. Set the voltage of VBE by varying VEE.
5. Note down IE value
6. Repeat step 3 and 4 for different value of VCB
7. Plot the BJT Input characteristic for its CB mode
Output characteristics (CB): 1. Connect the circuit for BJT in CB mode as per circuit diagram
2. Switch on the Power supply
3. Keep IE at a constant value by varying VEE
4. Set the voltage of VCB by varying VCC gradually
5. Note down IC value
6. Repeat step 3 and 4 for different of IE
7. Plot the BJT Output characteristic for its CB mode.
OBSERVATION TABLE:
Transistor Input characteristics (CB) Sl.No Supply
voltage (Volts)
vCB (Volts) = 0 vCB (Volts) = 2 vCB (Volts) = 4 vBE (Volts) IE (mA) vBE (Volts) vBE (Volts) vBE (Volts) IE (mA)
1 2 3 4 5 6
7 8 9
10 11
Transistor output characteristics (CB) Sl.No IE (mA) = 0 IE (mA) = 5 IE (mA) = 10 IE (mA) = 20
vCB (Volts) IC (mA) vCB (Volts) IC (mA) vCB (Volts) IC (mA) vCB
(Volts) IC (mA)
1 0
2 1
3 2
4 3
5 4
6 5
7 6
8 7
9 8
10 9
11 10
Expected Graph: Input Characteristics
Output Characteristics
RESULT/ CONCLUSION: (Whow you have solved them.)
Write your remarks or any difficulties faced durin
ng the experiment and
EXPERIMENT NO-7 AIM: To study the input and output characteristic of BJT in CE configuration
APPARATUS REQUIRED:
SL
No
Name of Component/Equipment Specification/Range Quantity
1 Dual Regulated power supply 0-30V,1A 1
2 Digital Multimeter - 3
3 Resistor 26K
1K
1
1
4 Bipolar junction Transistor BC107 1
5 Breadboard - 1
7 Connecting Wire - As per requirements
THEORY: A transistor is a three-terminal device. The three terminals are emitter, base and collector. In
common-emitter configuration, we make the emitter common to both input and output. For normal
operation, the emitter-base junction is forward biased and the collector-base is reverse-biased.
The input characteristic is a plot between iB and vBE keeping voltage vCE constant. This
characteristic is very similar to that of a forward-biased diode. The input dynamic resistance is
calculated using the formula
, at vCE = constant
The Output characteristic curves are plotted between ic and vCE, keeping voltage iB constant. These
curves are almost horizontal. This shows that the output dynamic resistance, defined below is very high.
, at IB = constant
The collector current IC is less than, but almost equal to the emitter current. The current IE divides into IC
and IB. That is:
When the output side is open ( i.e
value. This value of collector cur
At a given operating poin
dc
ac
CIRCUIT DIAGRAM:
PROCEDURE: Input characteristics (CE): 1. Connect the circuit for BJT in
2. Switch on the Power supply
3. Keep vCE at a constant value b
4. Vary the voltage of vBE by vary
5. Note down IB value
6. Repeat step 3 and 4 for differe
7. Plot the BJT Input characterist
e., IB = 0), the collector current is not zero, but h
rrent is called collector reverse saturation curren
nt, we define the dc and ac gains ( ) as follows:
current gain, dc =
current gain, = , at VCE = constant.
CE mode as per circuit diagram
y varying vCC.
ying vBB gradually
ent value of vCE
tic for its CE mode
has a small (a few μA)
nt, ICBO.
Output characteristics (CE): 1. Connect the circuit for BJT in CE mode as per circuit diagram
2. Switch on the Power supply
3. Keep IB at a constant value by varying vEE
4. Vary the voltage of vCE by varying vCC gradually
5. Note down Ic value
6. Repeat step 3 and 4 for different of IB
7. Plot the BJT Output characteristic for its CE mode
OBSERVATION TABLE: Transistor Input characteristics (CE) Sl.No vCE (Volts) = 0 vCE (Volts) = 2 vCE (Volts) = 5
vBE (Volts) IB(μA) vBE (Volts) IB(μA) vBE (Volts) IB(μA) 1 0.1 2 0.2 3 0.3 4 0.4 5 0.5 6 0.6 7 0.62 8 0.64 9 0.66
10 0.68 11 0.70
Transistor output characteristics (CE) Sl.no IB (μA ) = 0 IB (μA ) = 10 IB (μA) = 30 IB (μA ) = 50
vCE (Volts) Ic (mA) vCE (Volts)
Ic (mA) vCE (Volts)
Ic(mA) vCE (Volts)
Ic (mA)
1 0.0 2 0.5 3 1.0 4 1.5 5 2.0 6 2.5 7 3.0 8 3.5 9 4.0
10 4.5 11 5.0
Expected Graph: RESULT/ CONCLUSION: (Write your remarks or any difficulties faced during the experiment and how you have solved them.)
EXPERIMENT NO-8 AIM: Realization of Logic Gates. APPARATUS REQUIRED:
SL
No
Name of Component/Equipment Specification/Range Quantity
1 ICs 7486, 7400, 7432, 7402, 7404, 7408. One Each
2 Digital IC Trainer
1
3 Connecting Wire/ Patch cords
As per requirements
THEORY: Circuit that takes the logical decision and the process are called logic gates. Each
gate has one or more input and only one output.
OR, AND and NOT are basic gates. NAND and NOR are known as universal gates. Basic gates form
these gates.
AND GATE: The AND gate performs a logical multiplication commonly known as AND
function. The output is high when both the inputs are high. The output is low level when
any one of the inputs is low.
OR GATE: The OR gate performs a logical addition commonly known as OR function.
The output is high when any one of the inputs is high. The output is low level when both
the inputs are low.
NOT GATE: The NOT gate is called an inverter. The output is high when the input is low.
The output is low when the input is high.
NAND GATE: The NAND gate is a contraction of AND-NOT. The output is high when both
inputs are low and any one of the input is low .The output is low level when both inputs
are high.
NOR GATE: The NOR gate is a contraction of OR-NOT. The output is high when both inputs
are low. The output is low when one or both inputs are high.
X-OR GATE: The output is high when any one of the inputs is high. The output is low when
both the inputs are low and both the inputs are high.
Name Circuit diagram: Truth Table: AND Gate (IC 7408) Truth Table: OR Gate (IC 7432)
Truth Table:
NOT Gate (IC 7404) Truth Table: NAND Gate(IC 7400)
Truth Table: NOR Gate(IC 7402) Truth Table: XOR Gate(IC 7486)
A B Y 0 0 0 0 1 0 1 0 0 1 1 1
A B Y 0 0 0 0 1 1 1 0 1 1 1 1
A Y
0 1
1 0
A B Y 0 0 1 0 1 1 1 0 1 1 1 0
A B Y 0 0 1 0 1 0 1 0 0 1 1 0
A B Y 0 0 0 0 1 1 1 0 1 1 1 0
Procedure: - 1. Verify the gates.
2. Make the connections as per the circuit diagram.
3. Switch on VCC and keep it at 5V and apply various combinations of input according to truth table.
4. Note down the output readings and verify their truth tables.
Expected Output: (As per the truth table)
RESULT/ CONCLUSION: (Write your remarks or any difficulties faced during the experiment and how you have solved them.)
EXPERIMENT NO-9 AIM: Realization of Basic Logic Gates using Universal Gates NAND and NOR. APPARATUS REQUIRED:
Sl. No Name of Component/Equipment Specification/Range Quantity
1 ICs 7400, 7402, As per requirements
2 Digital IC Trainer and Bread Board
One Each
3 Connecting Wire/ Patch cords
As per requirements
4 Power Supply (0-15V) -----
THEORY: A universal gate is a gate which can implement any Boolean function without need to use any other gate type. The NAND and NOR gates are universal gates. In practice, this is advantageous since NAND and NOR gates are economical and easier to fabricate and are the basic gates used in all IC digital logic families. In fact, an AND gate is typically implemented as a NAND gate followed by an inverter not the other way around!! Likewise, an OR gate is typically implemented as a NOR gate followed by an inverter not the other way around!! Realizations of Different logic gates using NAND and NOR gates: Circuit diagram: 1) NOT using NAND Gate 2) OR Using NAND Gate
3) AND Using NAND Gate
4) AND Using NOR Gate 5) OR Using NOR Gate 6) NOT Using NOR Gate
PROCEDURE:
1. Verify the gates.
2. Make the connections as per the circuit diagram.
3. Switch on VCC and keep it at 5V and apply various combinations of input according to truth table.
4. Note down the output readings and verify their truth tables.
Expected Output: (As per the truth table)
RESULT/ CONCLUSION: (Write your remarks or any difficulties faced during the experiment and how you have solved them.)