ece631/ee631q lecture 15: switch level inverter modeling
DESCRIPTION
ECE631/EE631Q Lecture 15: Switch Level Inverter Modeling. S.D.Sudhoff Purdue University. IM Overview. Objectives Today. Develop switch level inverter model that includes losses - PowerPoint PPT PresentationTRANSCRIPT
EE631 – Spring 2005 1
ECE631/EE631QLecture 15: Switch Level Inverter
Modeling
S.D.Sudhoff
Purdue University
EE631 – Spring 2005 2
IM Overview
ini
invinr
inC
aLi
bLi
cLi
Lacr
Lacr
Lacr
acL
acL
acL
Cacr
Cacr
Cacr
acC
acC
acC
aOi
bOi
abOv
*eqLi
*edLi
e
*eqOv*edOv
e
aLi
bLi
VoltageController
CurrentController Voltage
ControllerVoltage
Controller
cbOv
EE631 – Spring 2005 3
Objectives Today
• Develop switch level inverter model that includes losses
• Based on paper, “IGBT and PN Junction Diode Loss Modeling For System Simulations ” by B. Cassimere, S. Sudhoff, B. Cassimere, M. Swinney to be presented at the 2005 IEMDC
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Inverter Phase Leg
-
+
+-xrv
xdci
dcv xsixus
xls
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Conduction Losses
xc
bx
x
bx
x
i
i
i
ixxcd xbav
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Switching Losses: Test Scenario
+
_
U
SorensenDHP 400Variable
DC PowerSupply
Tektronix 3450Digital
Oscilloscope500MHz 2Gs/s
Tektronix AM5030Current Probe Amplifier
Tektronix PS200Voltage Differential
Tektronix AM5030Current Probe Amplifier
Tektronix PS200Voltage Differential
Tektronix A6302Current Loop Probes
Devices Under Test (DUTs)
+
_
_
+
BX
BU
EU
EX
(GU)
(GX)
tv
ti
dv
td ii
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Unprocessed Waveforms
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Filtered IGBT Turn On Waveforms
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Turn On Energy And Loss
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Energy Loss Summary
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Approaches to Loss Incorporationinto Simulation Model
• Physics Based Device Model
• Behavior Based Device Model
• Other
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xrv
xdci
lxP
ldo fft
xsi
dcxsvi
xus0
0
0
0
Initial Conduction Interval
SwitchingInterval 1
SwitchingInterval 2
FinalConduction Interval
Case 1 - Upper IGBT to lower diode
tcddc vv
dcdv
etdt
Case 1: Upper IGBT to Lower Diode
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xrv
xdci
lxP
x si
dcxs vi
l d o nt
xus
0
0
0
0
I n it ia l C o n d u c t io n I n te r v a l
S w itc h in gI n ter v a l 1
S w itc h in gI n ter v a l 2
F in a lC o n d u c t io n I n te r v a l
C ase 2 - U pper d iode to low er IG B T
dcddc vv tcdv
e d tt
Case 2: Upper Diode to Lower IGBT
EE631 – Spring 2005 14
xrv
xdci
lxP
x si
dcxs vi
ld o nt
0
0
0
0
S w itc h in gI n ter v a l 2
I n it ia l C o n d u c t io n I n te r v a l
S w itc h in gI n ter v a l 1
F in a lC o n d u c t io n I n te r v a l
x us
C ase 3 - Low er d iode to upper IG B T
tcddc vv
e d tt
dcdv
Case 3: Lower Diode to Upper IGBT
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xrv
xdci
lxP
ldofft
x si
dcxsvi0
0
0
0
SwitchingInterval 2
Initial Conduction Interval
SwitchingInterval 1
FinalConduction Interval
xus
Case 4 - Lower IGBT to upper diode
dcddc vv
etdt
tcdv
Case 4: Lower IGBT to Upper Diode
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Calculation of Switching Times
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Switching Times
yyyyh
by
xs
g
dcb
dcy
e
by
xsy
c
dcb
dcyyy i
i
v
vf
i
id
v
vbat
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Model SummaryTable III. Model Summary
Time Period Duration xrv xdci
Conduction Interval
0xsi - tcddc vv xsi
1xus 0xsi - dcddc vv dcddc vv
0xsi - dcdv 0
0xus 0xsi - tcdv 0
Switching Interval 1
0xsi ldofft tcddc vv xsi
1xus 0xsi ldont dcddc vv dcddc vv
0xsi ldont dcdv 0
0xus 0xsi ldofft tcdv 0
Switching Interval 2
Case 1 etdt tcddc vv xsi
Case 2 edtt dcddc vv 0
Case 3 edtt 0 xsi
Case 4 etdt dcddc vv 0
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Model Parameters
• Fuji 6MBI30L-060
• Fuji Electric EXB840
• Gate resistance of 85 • On voltage of 15V
• Off voltage of -5V
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Model Parameters
Table 2. Switching Parameters.
Transistor Diode Units
bxi 30 30 A
dcxv 600 600 V
ya 7.303x 10-7 3.951 x 10-7 s
yb -1.289 x 10-6 -3.500 x 10-6 s
yc 1.454 x 10-1 1.362 -
yd -1.467x 10-6 4.660 x 10-7 s
ye 1.623 x 10-1 1.480 -
yf 3.645 x 10-6 3.643 x 10-6 s
yg 5.762 x 10-2 1.844 -
yh 5.646 x 10-2 -4.142x 10-2 -
ldont 3.2 x 10-6 1.6 x 10-6 s
ldofft 1.6 x 10-6 3.2 x 10-6 s
bxi xaxbxc
Table I. Conduction Loss Parameters.
Transistor Diode Units
bxi 30 30 A
xa 2.01 x 10-4 .270 V
xb 3.56 1.45 V
xc 0.257 0.136 -
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Model Predictions
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Thermal Effects