ecen 3320 semiconductor devices class mee

ECEN 3320 Semiconductor Devices Class Mee9ng Number 1

Semiconductors and Semiconductor La>ces

Today’s Topics

•  Course Overview •  Semiconductors and Semiconductor La>ces

The Course

•  Purpose •  Par9culars • Objec9ves •  The Text • Workload/Expecta9ons/Grading • Website hMp://ecee.colorado.edu/ecen3320/

The Website

hMp://ecee.colorado.edu/ecen3320/ Contains all of the informa9on we are about to review plus some things more

The Course


Course Purpose

Integrated circuits permeate every aspect of our present day lives. This course introduces the basic concepts of the opera9on of the semiconductor devices that comprise today’s integrated circuits. Topics to be discussed include semiconductor materials, basic device physics, p-‐n junc9ons, metal-‐semiconductor junc9ons and transistors, both bipolar and metal-‐oxide-‐semiconductor (MOS).

The Course


Par9culars I

•  Prerequisite: ECEN 3250 – Introduc9on to Microelectronic Circuits •  Instructor: Alan Mickelson • Office: ECEE 130 •  Phone: (303)492-‐7539 •  Email: [email protected]

Par9culars II •  Lecture: MWF 11:00 a.m.– 11:50 a.m. • Office hours: WTh 4:00 – 5:00 p.m. •  Exams: 3 midterms •  (Tenta9ve) Exam Dates: 10/2, 11/5 and 12/6 •  Project: Due last day of class 12/13/13

The Course


Objec9ves

1.   To understand the opera9on of the most ubiquitous of semiconductor devices,

2.   To use models of semiconductor devices to predict terminal characteris9cs under diverse opera9ng condi9ons,

3.   To judiciously design devices that avail themselves of presently available technology.

The Course


The Text

•  Text: B. Van Zeghbroeck, Principles of Semiconductor Devices • Website for text: hMp://ece-‐www.colorado.edu/~bart/book/ •  Referred to as “VZ” followed by chapter and sec9on

The Course


Workload/Expecta9ons/Grading

• Workload: 9 hours per week – 3 in class and 6 hours outside •  Expecta9ons: Reading will be done before class, ques9ons will be prepared before problem sessions and assignments will be handed in on 9me • Grading: 20% HW, 20% project and 20% for each midterm

The Course


The Website

hMp://ecee.colorado.edu/ecen3320/ Also includes a schedule of topics (as does the syllabus) and (in the syllabus) material on disability, religious observance, classroom behavior, honor code and discrimina9on and harassment

Today’s Topics

•  Course Overview •  Semiconductors and Semiconductor La>ces

Semiconductors

•  Are everywhere! •  A brief history •  Are driven by Moore’s law (or ITRS) • What are semiconduc9ng elements and what are semiconductors

Semiconductors are Everywhere!

A Brief History I

•  Rec9fica9on in metal-‐semiconductor contact (Braun, 1874)

•  Theory of thermionic emission (Bethe 1942) •  Transistor (point-‐contact transistor) using polycrystalline germanium (Shockley, Bardeen and BraMain, 1947)

•  Bipolar junc9on transistor (Shockley, 1947) •  Integrated circuit (Kilby and Noyce, 1958) using bipolar junc9on transistors

A Brief History II

•  Prac9cal metal-‐oxide-‐semiconductor (MOS) devices (1960s)

•  SSI (~10 Trs.chip) -‐> MSI (~100 Trs/chip) -‐> LSI (10,000 Trs/chip) in the 1970s)

•  VLSI (~10^5 TRs/chip) -‐> ULSI (10^6 TRs/chip) in the 1990s

•  Mul9core chip processors -‐> 10^8 TRs/core up to 8 processors by 2010

•  ITRS predicts 8 nm feature size with 1000 cores in 2020

Why the increases? -‐ Moore’s Law

La>ces

•  Types of condensed maMer •  2-‐D Bravais la>ces •  3-‐D Bravais la>ces •  Miller planes •  La>ces with bases •  Crystal growth

Forms of Condensed MaMer

2-‐D Bravais La>ces

3-‐D Bravais – Cubic, FCC and BCC

Diagrams of all the 3-‐D Bravais

Wurzite – ZnS, GaN

Diamond

Zinc Blende

Miller Planes – Characterize Facet

Bulk Crystal Growth I

Bulk Crystal Growth II

ecen 3320 semiconductor devices class mee

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