edms no. 888499 photoinjector general + photocathodes presented by konrad elsener (cern-ab)
TRANSCRIPT
EDMS No. 888499
Photoinjector General +
Photocathodes
presented by Konrad Elsener (CERN-AB)
EDMS No. 888499
Acknowledgements (PHIN)
We acknowledge the support of the European Community-Research Infrastructure Activity under the FP6 “Structuring the European Research Area” programme (CARE, contract number RII3-CT-2003-506395).
EDMS No. 888499
Outline
Overview Photocathodes: Status + Outlook
(photocathode for CLEX) PHIN in CTF2 Summary
EDMS No. 888499
Overview
LASER
RF GUN
RF equip.
Photocathode
“Photoinjector”
bunched
electron
beam
Cs2Te
UV
…cf. next two talks…
G. McMonagle
(yesterday)
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Photocathodes
cf. presentation by R. Losito, 17 Jan. 2007
HIGHLIGHT end of 2006:
Photocathode No. 166 produced (after > 3 years interruption)
Cs-Te cathode, co-evaporation,
Quantum Efficiency > 6%
very detailed description of No. 166: CTF3-Note-089
many thanks to Eric Chevallay
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Photocathodes – No. 167
HIGHLIGHT 2007:
Photocathode No. 167 produced 29 November
(Cs-Te cathode, co-evaporation)
Quantum Efficiency Lifetime
measured during 1000 hours
EDMS No. 888499
0
2
4
6
8
10
12
14
16
0 200 400 600 800 1000 1200
time [h]
Qua
ntum
Eff
icie
ncy
[%]
data taken in DC-gun, 80 kV (-> 8 MV/m)
29 Nov. 2007 Xmas break 9 Jan. 2008
CTF3 specs
(drive beam)
Photocathodes - No. 167
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manipulator
DC- gun
preparation
chamber
transport
carrier
~ 1.4 m
Photocathodes – No. 167
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basic unit: Cu “plug”
on the “arm” inside
the transport carrier:
up to 4 plugs
Photocathodes - No. 167
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Photocathodes
Process Control and Reproducibility (A. Barbiero and E. Chevallay)
- cleanliness / UHV vacuum
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H2
CO
N2
N
CH4
O
H2O
...
a long period of improvements, pumping, leak testing, baking-out, leak testing,
repair, pumping, baking out, ...
vacuum before cathode preparation: < 3x10-11 mbar
residual gas analysis in preparation chamber (29 Nov. 2007)
Photocathodes - vacuum
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Photocathodes – film thickness
Process Control and Reproducibility (A. Barbiero and E. Chevallay)
- cleanliness / UHV vacuum
- film thickness monitoring (Te, not Cs)
-> new stylus profilometer, calibrated
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Photocathodes - film thickness
Te films on
quartz substrate
new Stylus Profilometer
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Photocathodes – film thickness
cross-check of Stylus Profiler using a calibrated sample* (Rank Taylor Hobson)with 3 grooves, 24 nm each
solid lines: =24 nm
dashed line: =26 nm
Result:
Profilometer intrinsic error < 2 nm
* sample on loan from CERN-TS/MME (W. Vollenberg)
0.5 mm
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Photocathodes – transfer arm
Process Control and Reproducibility (A. Barbiero and E. Chevallay)
- cleanliness / UHV vacuum
- film thickness monitoring
-> stylus profilometer, calibrated
- possibility of cathode chemical analysis (X-ray Photoel. Spectr.)
-> new, smaller transfer arm (for 1 plug)
(collaboration with team of M. Taborelli / TS-MME)
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Photocathodes – transfer arm
(attached to preparation chamber) (courtesy A. Barbiero)
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Photocathodes – plug surfaces
Process Control and Reproducibility (A. Barbiero and E. Chevallay)
- cleanliness / UHV vacuum
- film thickness monitoring
-> stylus profilometer, calibrated
- possibility of cathode chemical analysis (XPS)
-> new transfer arm
- reproducible “plug” surface
-> test programme on surface preparation + analysis
(work in progress - No. 166 and No. 167 are very different)
EDMS No. 888499
photocathode for CLEX
Preparation chamber for CLEX
(ex-CTF2 Probe-Beam)
Cs + Te sources (no co-evaporation);
1 quartz thickness monitor (DN 100 flange)
manipulator arm
(position for “plug”)pumping
port
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“CTF2” (south)
photoemission
laboratory
“CTF2”
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“CTF2” - status
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Acknowledgments
Nathalie Lebas: expert help with the laser
Arnaud Brielmann: expert help with controls
and interlocks
(for equipment safety)
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Summary + Outlook
Photoemission Laboratory:
ready for production of cathodes Cs-Te cathode No. 167: ready for PHIN work in progress to improve reproducibility near future: CLEX cathode
continue contributions to PHIN in “CTF2”
EDMS No. 888499
spare slides
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spare slides
8 Nov. 2007
EDMS No. 888499
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PHIN overview
RF Network
Laser Beam Line0.37mJ / mPulse
2332 mPulses
Electron Beam2.33 nc / mPulses
Transportcarrier
3 GHz RF gunE = 85 MV/mU = 5.6 MeV
I = 3.5 ACs2
Te
cath
QE
= 3
%
Photocathodepreparation
chamber
Under the responsibility ofCLF-RAL
Under the responsibility ofLAL - Orsay
Under the responsibility ofCERN
Under RAL responsabilitywith CERN collaboration
Total efficiencyIROUT UVcath = 3.6 %
KLYSTRON3 GHz - 30 MW
Freq. X 4 l =
262 nm
Power Amplifier : DPSSL3-pass x 5
200 ms ; Ptrain = 15 kWl = 1047 nm ; 10.3 mJ / mPulse
Pulse width 10 psRep. Rate 5 - 50 Hz
Master oscillatorl = 1047 nm f = 1.5 GHzP > 0.2 W
W/mPulse > 0.13 nJ
Pulse shaping and stabilization
Phase coding
3 GHz RF source
Pre-amplifierl = 1047 nmPCW = 10 W
W/mPulse = 6.7 nJ
1.5 GHz
3 GHz
High Q Laser
First Amplifier : DPSSL3-pass x 300
400 ms ; Ptrain = 3 kW
2 mJ / mPulse
Pulse width 10 psRep. Rate 5 - 50 Hz
High Q Laser
Phase coding+ amplification