effect of ferromagnetic layer thickness on the giant magneto resistance
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Proceedings of The 3rd Asian Physics Symposium (APS 2009)July 22 – 23, Bandung, Indonesia
65
Effect of Ferromagnetic Layer Thickness on the Giant Magnetoresistance
Properties of NiCoFe/Cu/NiCoFe Sandwich
Ramli1,3 , Mitra Djamal 1 , and Khairurrijal 2 1Theoretical High Energy Physics and Instrumentation Research Group, Faculty of Mathematics and Natural
Sciences, Institut Teknologi Bandung, Jl. Ganesa 10, Bandung 40132, Indonesia2Physics of Electronic Material Research Group, Faculty of Mathematics and Natural Sciences, Institut Teknologi
Bandung, Jl. Ganesa 10, Bandung 40132, Indonesia3 Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Padang,
Jl. Prof. Dr. Hamka Airtawar Padang 25131, Indonesia
Email:[email protected]
AbstractWe have grown NiCoFe/Cu/NiCoFe sandwich onto Si (111) substrates by opposed target magnetron
sputtering (OTMS) technique. The growth paramaters are: temperature of 100 oC, applied voltage of 600 Volt, flow
rate of the Argon of 100 sccm, and growth pressure of 5.2 x 10 -1 Torr. The effects of ferromagnetic layer thickness
on giant magnetoresistance (GMR) properties of NiCoFe/Cu/NiCoFe sandwich were studied. At room temperature,
we have found the changes in the magnitudo of giant magnetoresistance (GMR) ratio of the samples as the thickness
ferromagnetic was varied. We observed that the GMR ratio of NiCoFe/Cu/NiCoFe sandwich was change with
different ferromagnetic layer thicknes (t NiCoFe). The magnitudo of GMR ratio with constant Cu layer thikness (t Cu =
13.2 nm) are; 10.5%, 24.4%, 70.0% and 30.1% for 40.0 nm, 47.5 nm, 62.5 nm, and 100.0 nm of NiCoFe layer
thickness ,respectively. In this paper, the influence of spin-dependent scattering to GMR value were studied. The
decrease in GMR at low thickness of NiCoFe is due to the scattering at the outer boundaries (substrate, buffer layer
or capping layer). This scattering significantly affects GMR when the thickness of the ferromagnetic layer becomes
smaller than the longer of the two mean-free paths associated with the spin up and spin down of electrons.
Keywords : Giant magnetoresistance, Opposed Target Magnetron Sputtering, NiCoFe, Spin-dependent scattering
1. Introduction
Giant magnetoresistance (GMR) effect
observed in magnetic multilayer films consisting of alternating magnetic and nonmagnetic layers
represents a relatively large change in the electrical
resistance when an external magnetic field is applied
to the films. The effects of GMR has been a focus of
intensive study for two decades, both for interesting
of fundamental physics [1,2] and important industrial
applications as sensors, memory, and read head
applications [3,4].
GMR can be qualitatively understood using
the series-resistor model. The series-resistor model
was initially developed using the two-current model
proposed by Mott [5]. The Mott model assumes that
no spin-flip scattering occurs during the transport of
electrons and that the currents through the twodifferent spin channels (spin up and spin down) are
described independently. Under these assumptions,
the conduction through these spin channels occur in
parallel.
Valet and Fert [6] proposed a different
model that modified the series-resistor model and
took into account the spin relaxation due to spin-flip
scattering in addition to the normal relaxation of
electrons associated with momentum. For the steady-
state spin transport in a magnetic multilayer, the spin
relaxation is balanced with the spin accumulation at
the layer interfaces when electrons move in the
direction perpendicular to the interfaces. The spin-
flip scattering is quantitatively described by the spin-
diffusion length. When the layer thicknesses are
much shorter than the spin diffusion length, the
Valet-Fert model simply represents the same as the
series-resistor model.
In this study, we are interested to sandwich
of NiCoFe/Cu/NiCoFe, which the NiCoFe alloy have
a soft magnetic properties. We investigate the GMR
effect with different thickness of NiCoFe layers at
room temperature.
2. Experiment
NiCoFe/Cu/NiCoFe sandwich were grownonto Si (111) substrate by dc-opposed targetmagnetron sputtering (dc-OTMS) technique. Thesputtering targets were NiCoFe and Cu. The NiCoFetarget was prepared by solid reaction method withmolar ratio Ni:Co:Fe = 60:30:10. Raw material forproducing NiCoFe target consists of 99.90% nickelpowder, 99.99% cobalt powder and 99.99% ironpowder. The Cu target also had been made by solidreaction from 99.50% copper powder.
Samples of the NiCoFe/Cu/NiCoFe
sandwich were deposited in several different time of
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66 Ramli, Mitra Djamal, and Khairurrijal
growth, so that they had different thickness of
sandwich layers. Other deposition parameters are
fixed. This parameters are: flow rate of Ar gas is
about 100 sccm, the growth pressure is 5.2 x10-1
Torr, dc Voltage is 600 volt, and the temperature is1000C. The samples were characterized using SEM
(Scanning Electron Microscope) type JEOL JSM-
6360 LA, XRD (X-Ray Diffraction), and
magnetoresistance measurements were made using a
linear four-point probe method with current-
perpendicular to-plane.
3. Result and Discussion
From previous work [7], we found thatgrowth time influence the thin film thickness. Theincrease of growth time increases the atoms whichpatched on the substrate. The selected sample of NiCoFe/Cu/NiCoFe sandwich had characteristic of surface structure as shown in SEM image in Fig. 1.
Fig. 1. SEM image of NiCoFe/Cu/NiCoFe sandwich
with t NiCoFe = 62.5 nm.
Fig. 2 shows X-ray diffraction spectra forNiCoFe/Cu/NiCoFe sandwich with t NiCoFe = 62.5 nm.
Fig.2. XRD spectra for NiCoFe/Cu/NiCoFe sandwich
with t NiCoFe = 62.5 nm.
Fig. 3. GMR ratio curves for NiCoFe/Cu/NiCoFe
sandwich with various NiCoFe layer thickness
(t NiCoFe) and fixed Cu layer thickness (t Cu = 14,4 nm)
at room temperature.
The GMR ratio is calculated by usingdefinition, GMR ratio (%) = {( R H – R0)/ R0}x100%,where R H is the resistance in presence of magnetic
field and R0 is the resistance in absence of magneticfield. Fig. 3 shows the GMR ratio curves forNiCoFe/Cu/NiCoFe sandwich with various NiCoFelayer thickness (t NiCoFe) and fixed Cu layer thickness(t Cu = 14,4 nm) at room temperature. Results showthat magnitudo of both GMR ratio and saturation field( H s) is vary.
Fig. 4 describes the magnitudo of GMR ratioversus the magnetic layer thickness forNiCoFe/Cu/NiCoFe sandwich with a fixed nonmagnetic spacer layer thickness. The magnitudo GMR
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Effect of Ferromagnetic Layer Thickness on the Giant Magnetoresistance ……………… 67
ratio possess a maksimum of 70.0 % at t NiCoFe = 62.5nm.
In sandwich structure, the deccrease in
magnitudo of GMR ratio at low thickness of NiCoFe
is due to the scattering on the outer surface likesubstrate or buffer layer [8]. This scattering
significantly affects GMR when the thickness of the
ferromagnetic layer becomes smaller than the longer
of the two mean-free paths associated with the spin
up and spin down of electrons.
At thickness of NiCoFe over 62.5 nm the
magnitudo GMR ratio decrease what could be
explained by the appearance of the inactive region
which shunts the current. For large NiCoFe layer
thickness, the inactive part appears in NiCoFe layer
and shunts the current. On the other hand, H s decrease
with increasing NiCoFe layer thickness, as observed
in Fig. 3. This result as same as phenomenon was
observed in NiFe/Cu multilayers [9] andelectrodeposited Co-Cu/Cu multilayers [10].
Fig. 4. GMR ratio as function of t NiCoFe for
NiCoFe/Cu/NiCoFe sandwich.
4. Conclusion
The NiCoFe/Cu/NiCoFe sandwich wassuccessful grown onto Si (111) substrate by opposedtarget magnetron sputtering. With this material, wehave successful to find material composition i.e.Ni60Co30Fe10, that has maximum GMR ratio at room
temperature. The magnitudo of GMR ratio changewith increase of ferromagnetic (NiCoFe) layerthickness and presents a maksimum of 70.0 % att NiCoFe = 62.5 nm.
AcknowledgmentThis work was supported by Asahi Glass Foundation(AGF) Grant, 2008.
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