electrical engineering: principles and applications, fourth edition, by allan r. hambley, ©2008...
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ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Lecture 27Bipolar Junction Transistors
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Bipolar Junction Transistors
1. Understand bipolar junction transistor operation in amplifier circuits.
2. Analyze simple amplifiers using the load-line technique and understand the causes of nonlinear distortion.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Tubes
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Deforest’s Audion
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Triode Tube
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Bardeen, Brittain and Shockley
Discovery of the transistor in 1947
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
First Transistor
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Initial Demonstration of Solid State Amplification
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
First Integrated Circuit (IC)
Jack Kilby at Texas Instruments (1958)
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Early Integrated Circuit (IC)
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Chip Evolution
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
NPN and PNP Bipolar Junction Transistors (BJT)
http://www.mtmi.vu.lt/pfk/funkc_dariniai/transistor/bipolar_transistor.htm
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
NPN Bipolar Junction Transistor
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Bias Conditions for PN Junctions
The base emitter p-n junction of an npn transistor is normally forward biased
The base collector p-n junction of an npn transistor is normally reverse biased
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Bias Conditions for NPN Junctions
http://www.mtmi.vu.lt/pfk/funkc_dariniai/transistor/bipolar_transistor.htm
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Bias Conditions for NPN Junctions
http://www.mtmi.vu.lt/pfk/funkc_dariniai/transistor/bipolar_transistor.htm
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Bias Conditions for NPN Junctions
http://www.mtmi.vu.lt/pfk/funkc_dariniai/transistor/bipolar_transistor.htm
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Bias Conditions for NPN Junctions
http://www.mtmi.vu.lt/pfk/funkc_dariniai/transistor/bipolar_transistor.htm
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Equations of Operation
1exp
T
BEESE V
vIi
BCE iii
From Kirchoff’s current law:
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Equations of Operation
E
C
i
i
Define as the ratio of collector current to emitter current:
Values for range from 0.9 to 0.999 with 0.99 being typical. Since:
EBBEBCE iiiiiii 01.099.0
Most of the emitter current comes from the collector and very little (1%) from the base.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Equations of Operation
1exp
T
BEESC V
vIi
1exp
T
BEESE V
vIi
E
C
i
i
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
1exp)1(
T
BEESB V
vIi
)1(1
EE
CECEB
BCE
ii
iiiii
iii
Equations of Operation
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Equations of Operation
1B
C
i
i
Define as the ratio of collector current to base current:
Values for range from about 10 to 1,000 with a common value being 100.
BC ii
The collector current is an amplified version of the base current.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Equations of Operation
1exp
T
BEESE V
vIi
1exp
T
BEESC V
vIi 99.0
E
C
i
i
1exp)1(
T
BEESB V
vIi
BC ii 1001
B
C
i
i
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Only a small fraction of the emitter current flows into the base provided that the collector-base junction is reverse biased and the base-emitter junction is forward biased.
The base region is very thin
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.1A certain transistor has = 50, IES = 10-14A, vCE = 5 V, and iE = 10 mA. Assume VT = 0.026 V. Find vBE, vBC, iB, iC and .
AmAi
i
mAii
VVVvvv
mVmVI
iVv
V
vIiIi
V
vIi
CB
EC
CEBEBC
ES
ETBE
T
BEESE
T
BEESE
19650
80.9
80.9
980.051
50
1
282.45718.0
4.71810
10ln26ln
expwith operation For 1exp
14
2
ESE
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.2Compute the corresponding values of if = 0.9, 0.99 and 0.999
999999.01
999.0
9999.01
99.0
99.01
9.01
999.0
99.0
9.0
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.3A certain transistor operated with forward bias of the base-emitter junction and reverse bias of the base-collector junction has iC = 9.5 mA and iE = 10 mA. Find the value of iB, and .
19
95.010
5.9
5.0
B
C
E
C
CEB
i
i
mA
mA
i
i
mAiii
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Common-Emitter Characteristics
biasreversevvif v
vvv
BCBECE
CEBEBC
0
vBC
vCE
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Common-Emitter Input Characteristics
1exp)1(
T
BEESB V
vIi
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Common-Emitter Output Characteristics
100 forii BC
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Amplification by the BJT
A small change in vBE results in a large change in iB if the base emitter is forward biased. Provided vCE is more than a few tenth’s of a volt, this change in iB results in a larger change in iC since iC=iB.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Common-Emitter Amplifier
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Load-Line Analysis of a Common Emitter Amplifier (Input Circuit)
tvtiRtvV BEBBBB in
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
CECCCC viRV
Load-Line Analysis of a Common Emitter Amplifier (Output Circuit)
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
As vin(t) goes positive, the load line moves upward and to the right, and the value of iB increases. This causes the operating point on the output to move upwards, decreasing vCE An increase in vin(t) results in a much larger decrease in vCE so that the common emitter amplifier is an inverting amplifier
Inverting Amplifier
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Load-Line Analysis of BJTAssume VCC = 10V
VBB = 1.6V
RB = 40 k
RC = 2 k
Vin = 0.4sin(t)
iBQ = 25 A
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
4040
6.100
6.100
406.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Load-Line Analysis of BJTAssume VCC = 10V
VBB = 1.6V
RB = 40 k
RC = 2 k
Vin = 0.4sin(t)
iBmax= 35 A
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
5040
24.00
24.00
406.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Load-Line Analysis of BJTAssume VCC = 10V
VBB = 1.6V
RB = 40 k
RC = 2 k
Vin = 0.4sin(t)
iBmin= 15 A
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
3040
2.14.00
2.14.00
406.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
VCEQ = 5V
iCEQ = 2.5 mA
VCEQ = 5V
VCEmin = 3V
VCEmax = 7V
CEC vik 210
Load-Line Analysis of BJTiBQ = 25 A
iBmin= 15 A
iBmax= 35 A
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Load-Line Analysis of BJT
Voltage waveforms for the common emitter amplifier. The gain is -5 (inverting).
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
When iC becomes zero, we say that the transistor iscutoff.
When vCE 0.2 V, we say that the transistor is in saturation.
Clipping
Amplification occurs in the active region. Clipping occurs in the saturation or cutoff regions.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Clipping
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.5
min
max
CE
CEQCE
V and
V,V Find
)sin(8.0)( ttvin Ai
QB 25
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
4040
6.100
6.100
406.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
min
max
CE
CEQCE
V and
V,V Find
)sin(8.0)( ttvin
Exercise 13.5
AiB 45max
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
6040
4.28.00
4.28.00
406.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
min
max
CE
CEQCE
V and
V,V Find
)sin(8.0)( ttvin
Exercise 13.5
AiB 5min
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
2040
8.08.00
8.08.00
406.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.5
mAiVVAi
mAiVVAi
mAiVVAi
CCEB
CCEB
CCEBQ QQ
5.4145
5.095
5.2525
maxminmax
minmaxmin
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.6
V
ttvin
2.1V
)sin(8.0)(
BB Ai
QB 15
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
3040
2.100
2.100
402.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.6
V
ttvin
2.1V
)sin(8.0)(
BB AiB 35
max
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
5040
28.00
28.00
402.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.6
V
ttvin
2.1V
)sin(8.0)(
BB AiB 1
min
Ak
Vivandv
vvandi
vikv
tvtiRtvV
BinBE
BEinB
BEBin
BEBBinBB
1040
4.08.00
4.08.00
402.1
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.6
mAiVVAi
mAiVVAi
mAiVVAi
CCEB
CCEB
CCEBQ QQ
5.3335
0.18.91
5.1715
maxminmax
minmaxmin
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
PNP Bipolar Junction Transistor
Except for reversal of current directions and voltage polarities, the pnp BJT is almost identical to the npn BJT.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
PNP Bipolar Junction Transistor
BCE
BC
EB
EC
iii
ii
ii
ii
)1(
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Common-Emitter Characteristics for a PNP BJT
1exp)1(
1exp
T
EBESB
T
EBESE
V
vIi
V
vIi
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.7
Find :
5050
5.2
A50i2.5mAi 6V,VFor BCCE
A
mA
i
i
B
C
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.8
Common emitter amplifier
080008.0 BEBin viv
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.8
Aivv
viv
Aivv
viv
Aivv
viv
viv
BBEin
BEBin
BBEin
BEBin
BBEin
BEBin
BEBin
1258000
102.0
102.0
758000
6.002.0
6.002.0
1008000
8.000
8.000
080008.0
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Exercise 13.8
Ai
Ai
Ai
B
B
BQ
5
48
24
min
max
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
Common emitter amplifier
CCE
CEC
iv
vi
30009
030009
Exercise 13.8
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc.
mAiv
vi
iv
CCE
CEC
CCE
33000
90
90
30009
Exercise 13.8
Load line: