electron exposure of mgo
DESCRIPTION
Electron Exposure of MgO. Slade J. Jokela, I. Veryovkin, A. Zinovev. MgO – Sample QP118. MgO sample prepared by Qing Peng 6nm film of MgO on low resistivity Si Sample had low secondary emission Possibly due to long shelf time Large amount of surface contamination. - PowerPoint PPT PresentationTRANSCRIPT
1
Electron Exposure of MgO
Slade J. Jokela, I. Veryovkin, A. Zinovev
2
MgO – Sample QP118
• MgO sample prepared by Qing Peng
• 6nm film of MgO on low resistivity Si
• Sample had low secondary emission– Possibly due to long shelf time– Large amount of surface contamination
3
MgO After 600eV Electron Exposure
002 - 725 to 0ev.1
Name
O 1s
Mg 2s
C 1s
F 1s
Pos .
531.0840
88.0840
285.6840
687.2840
FWHM
3.7781
2.9644
2.9239
2.8085
Area
113606.737
16075.373
17800.950
26550.296
At%
42.18
32.40
18.83
6.59
O 1s
Mg 2s
C 1s
F 1s
O KL L O 1s O 2s O 2p
O 2p3/ 2
O 2p1/ 2
Mg 2s
Mg KLL
Mg 2p3/2
Mg 2p
Mg 2p1/2 Mg 3s
C KLL C 1s
C 2p3/2
C 2p1/2
C 2p
F 1s F KL L
F 2s
F 2p1/2
F 2p3/2
F 2p
x 103
5
10
15
20
25
30
35
40
45
CP
S
700 600 500 400 300 200 100 0Bi ndi ng E nergy (eV)
002 - 725 to 0ev.1
Name
O 1s
Mg 2s
C 1s
F 1s
Pos .
532.6430
87.4430
285.2430
686.4430
FWHM
4.1286
3.0567
2.5848
2.5083
Area
113358.917
12847.838
19581.165
3493.100
At%
46.99
28.91
23.13
0.97
O 1s
Mg 2s
C 1s
F 1s
O KL L O 1s O 2s O 2p
O 2p3/ 2
O 2p1/ 2
Mg 2s
Mg KLL
Mg 2p3/2
Mg 2p
Mg 2p1/2 Mg 3s
C KLL C 1s
C 2p3/2
C 2p1/2
C 2p
F 1s F KL L
F 2s
F 2p1/2
F 2p3/2
F 2p
x 103
10
15
20
25
30
35
40
45
CP
S
700 600 500 400 300 200 100 0Bi ndi ng E nergy (eV)
MgO - Initial MgO – After 13 hrs electron exposure
F O C Mg
Double C peaks Double Peak is nowDifficult to resolve
F O CF O MgCF O
4
Comparison
Before Electron Exposure (at. %)
After Electron Exposure (at. %)
O 46.99 42.18
Mg 28.91 32.40
C 23.13 18.83
F 00.97 06.59
5
5 keV Ar+ Sputtering
002 - 725 to 0ev.1
Name
O 1s
Mg 2s
C 1s
F 1s
Pos .
531.7730
88.7730
286.1730
688.1730
FWHM
3.6540
3.2402
2.9594
2.8683
Area
112782.340
16875.670
10412.380
22832.338
At%
45.23
36.74
11 .90
6.13
O 1s
Mg 2s
C 1s
F 1s
O KL L O 1s O 2s O 2p
O 2p3/ 2
O 2p1/ 2
Mg 2s
Mg KLL
Mg 2p3/2
Mg 2p
Mg 2p1/2 Mg 3s
C KLL C 1s
C 2p3/2
C 2p1/2
C 2p
F 1s F KL L
F 2s
F 2p1/2
F 2p3/2
F 2p
x 103
10
15
20
25
30
35
40
45
CP
S
700 600 500 400 300 200 100 0Bi ndi ng E nergy (eV)
MgCF O 002 - 725 to 0ev.1
Name
O 1s
Mg 2s
C 1s
F 1s
Pos .
531.6460
88.4460
286.2460
687.8460
FWHM
3.3626
2.6712
2.8959
2.8412
Area
137060.132
18319.946
4132.501
20595.681
At%
52.30
37.95
4.49
5.26
O 1s
Mg 2s
C 1s
F 1s
O KL L O 1s O 2s O 2p
O 2p3/ 2
O 2p1/ 2
Mg 2s
Mg KLL
Mg 2p3/2
Mg 2p
Mg 2p1/2 Mg 3s
C KLL C 1s
C 2p3/2
C 2p1/2
C 2p
F 1s F KL L
F 2s
F 2p1/2
F 2p3/2
F 2p
x 103
10
15
20
25
30
35
40
45
50
55
CP
S
700 600 500 400 300 200 100 0Bi ndi ng E nergy (eV)
10 seconds Ar+ sputtering 30 more seconds Ar+ sputtering
6
Comparison
13hrs Electron Exposure (at%)
10s Ar+ Sputtering (at%)
30s more Ar+ Sputtering (at%)
O 42.18 45.23 52.30
Mg 32.40 35.74 37.95
C 18.83 11.90 04.49
F 06.59 06.13 05.26
7
MgO After 600eV Electron Exposure
002 - 725 to 0ev.1
Name
O 1s
Mg 2s
C 1s
F 1s
Pos .
531.6460
88.4460
286.2460
687.8460
FWHM
3.3626
2.6712
2.8959
2.8412
Area
137060.132
18319.946
4132.501
20595.681
At%
52.30
37.95
4.49
5.26
O 1s
Mg 2s
C 1s
F 1s
O KL L O 1s O 2s O 2p
O 2p3/ 2
O 2p1/ 2
Mg 2s
Mg KLL
Mg 2p3/2
Mg 2p
Mg 2p1/2 Mg 3s
C KLL C 1s
C 2p3/2
C 2p1/2
C 2p
F 1s F KL L
F 2s
F 2p1/2
F 2p3/2
F 2p
x 103
10
15
20
25
30
35
40
45
50
55
CP
S
700 600 500 400 300 200 100 0Bi ndi ng E nergy (eV)
002 - 725 to 0ev.1
Name
O 1s
Mg 2s
C 1s
F 1s
Pos .
531.6670
88.6670
291.2670
687.4670
FWHM
3.8033
3.0062
3.5661
2.8868
Area
136981.559
18455.542
5057.131
41098.291
At%
49.08
35.90
5.16
9.85
O 1s
Mg 2s
C 1s
F 1s
O KL L O 1s O 2s O 2p
O 2p3/ 2
O 2p1/ 2
Mg 2s
Mg KLL
Mg 2p3/2
Mg 2p
Mg 2p1/2 Mg 3s
C KLL C 1s
C 2p3/2
C 2p1/2
C 2p
F 1s F KL L
F 2s
F 2p1/2
F 2p3/2
F 2p
x 103
5
10
15
20
25
30
35
40
45
50
CP
S
700 600 500 400 300 200 100 0Bi ndi ng E nergy (eV)
F O C MgF O CF O MgCF OAfter 40seconds total Ar+ sputtering After 18 more hours electron
exposure
8
Comparison
After Ar+ Sputtering (at%)
After 18hrs More Electron Exposure (at. %)
O 52.30 49.08
Mg 37.95 35.90
C 04.49 05.16
F 05.26 09.85
9
Further Ar+ Sputtering
• 120 seconds of Ar+ sputtering– Carbon peaks virtually eliminated– Fluorine peak reduced to 3 at.%
• 240 seconds of Ar+ sputtering– Fluorine peak reduced to 1.9 at.%– Si substrate becoming visible in XPS spectrum
• 360 seconds of Ar+ sputtering– Si is obviously showing through– Fluorine peak ‘increased’ to 2.3%
• Such a small increase is difficult to confirm
10
Secondary Emission
• Emission spectra were taken sequentially and are labeled from B to K (1 to 10 respectively)– Each spectrum is an average of 5 taken over 1.5
minutes (0.3 minutes for each)– Periodic ‘noise’ was later eliminated by delaying
scans by a very short period so that the coupled signal did not reinforce itself in the average.
11
Secondary Emission
0 200 400 600 800 10000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Seco
ndar
y E
lect
ron
Yie
ld (
per
prim
ary)
Primary Electron Energy (eV)
B C D E F G H I J K
0 200 400 600 800 10000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Seco
ndar
y E
lect
ron
Yie
ld (
per
prim
ary)
Primary Electron Energy (eV)
B C D E F G H I J K
0 200 400 600 800 10000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Seco
ndar
y E
lect
ron
Yie
ld (
per
prim
ary)
Primary Electron Energy (eV)
B C D E F G H I J K
0 200 400 600 800 10000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Seco
ndar
y E
lect
ron
Yie
ld (
per
prim
ary)
Primary Electron Energy (eV)
B C D E F G H I J K
1.) Initial 2.) 13hr Electron
3.) 40s Ar+ Sputter 4.) 18hr Electron
12
Summary of Data Analysis
• This was an initial test on an old sample– Test should be repeated on a newer and on a
thicker sample– I will look back at older samples to see if emission
degradation has occurred• Secondary emission determination has changed since
then, so it may not be possible to directly compare older spectra to newer spectra
– Different electron energies should be studied
13
Mass Spectrometry• Surface desorption
– Electron stimulated desorption
– Temperature Prog. Desorp.
– If we know what is being removed from the surface during these processes, we may be able to accelerate the scrubbing process
Mass Spec
Electron Gun
Heated Sample Holder
Main Chamber Attached Here
Mislocated in drawing, port is on right, not left, side
Transfer Arm Attached here
Turbopump attached here
EXISTING ITEMSREQ. MODIFICATIONSSCHEMATIC ERROR