elg6380 assignment 1 solutions chapter 3.4

3
From 1) A d a) b) c) d) e) m Pierret, 2 nd A particle of imensional p ) Write dow various sp ) Indicate th ) List the b ) Establish condition ) Obtain th energies. ed., Advanc mass m and potential we wn the simpl patial region he general so oundary con the simultan s. e equation th E Se ced Semicon d fixed total e ll shown bel lified form o ns. olutions to y nditions appr neous equati hat must be s LG637 emicond Assi nductor Fund energy E, wh low: of Schröding your part (a) ropriate for t ions that resu solved to de 0 U 0 0 U 72 Th ductor ignmen damental here 0 < E < ger’s equatio equations. the given pro ult by applyi termine the a heory o Device nt 1 Due: < U 0 , is place n appropriat oblem. ing the part ( allowed part Page 1 of of es : 11 Oct 201 ed in the one te for the (c) boundary ticle 3 x 1 e- y

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Semiconductor Physics Assignment

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Page 1: ELG6380 Assignment 1 Solutions Chapter 3.4

From 1) A

da)

b)c)d)

e)

m Pierret, 2nd

A particle of imensional p) Write dow

various sp) Indicate th) List the b) Establish

condition) Obtain th

energies.

ed., Advanc

mass m andpotential wewn the simplpatial regionhe general sooundary conthe simultans. e equation th

ESe

ced Semicon

d fixed total ell shown bellified form o

ns. olutions to y

nditions apprneous equati

hat must be s

LG637emicond

Assi

nductor Fund

energy E, whlow: of Schröding

your part (a) ropriate for tions that resu

solved to de

0

U0

0

U ∞

72 Thductor

ignmen

damental

here 0 < E <

ger’s equatio

equations. the given proult by applyi

termine the

a

heory oDevice

nt 1 Due:

< U0, is place

n appropriat

oblem. ing the part (

allowed part

Page 1 of

of es

: 11 Oct 201

ed in the one

te for the

(c) boundary

ticle

3

x

1

e-

y

Page 2: ELG6380 Assignment 1 Solutions Chapter 3.4

Page 2 of 3

2) A certain hypothetical material with cubic crystal symmetry is characterized by the E-k plot sketched in Fig. P3.4. a) Which set of holes, band A holes or band B

holes, will exhibit the greater [100]-direction (mxx) effective mass? Explain.

b) Sketch the expected form of the valence-band constant-energy surfaces for the represented cubic material. Assume that the E-k relationship is parabolic (i.e., an ellipsoid of revolution).

Page 3: ELG6380 Assignment 1 Solutions Chapter 3.4

Page 3 of 3

3) The E-k relationship about the GaAs conduction-band minimum becomes non-parabolic at energies only slightly removed from Ec and is more accurately described by

( )2 4 0, 0cE E ak bk a b− = − > > (a) What effect will the cited fact have on the effective mass of electrons in the GaAs conduction

band? Substantiate your conclusion. (Is your answer here in agreement with the Table 3.1 footnote?)

(b) Electrons in GaAs can transfer from the Γ minimum to the L minima at sufficiently high electric fields. If electrons were to transfer from the Γ minimum to the L minimum shown in Fig. 3.13(d) of the notes/text, would their effective mass increase or decrease? Explain. (The constant-energy surfaces about the L minima are actually ellipsoidal, but for simplicity assume the surfaces to be spherical in answering this question.)