ELX Solar Cell Ellipsometer The EL X is a new discrete wavelength rotating analyzer ellipsometer with many new features such

as Windows software and laser alignment, which make the instrument very quick and easy to use.

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Features of the EL X

1. Fast rotating analyzer operation.

2. Windows software for smooth set

up and data handling

3. Laser alignment tool for fast easy

set up

4. Auto focus compensates for sample

topography and wafer 'bow'

misalignment

5. High stability and reproducibility

of measured angle better than 0.01

degrees

6. Fastest measuring mode 1 s

Introduction to the EL X

The EL X is a high speed discrete wavelength ellipsometer designed for measuring the

refractive index and thickness of single and multi-layer. The EL X takes quick and accurate

readings due to its precision optical analyzer/detector and its stable mechanical design. The

ellipsometer is supplied complete with an integrated Windows software package, which

further enhances the speed and ease of use of the instrument.

The wavelength of the EL X can be selected from 543nm,594nm,612nm, 633 nm to 1150

nm. (The standard wavelength is HeNe laser at 632.8 nm). Infrared sources at 0.83, 1.31 and

1.52 micron are also available.

The EL X is very easy to use and can be fitted with our new laser alignment tool which

greatly improves the ease of use and speed of operation when compared to conventional

ellipsometers.

The EL X has 3 measurement modes that are based on harmonic analyses and one

measurement mode based on minimum search for which we have received the Schmidt-

Roemhild Technology Award. This minimum search mode gives also correct results for very

thin layers, which is normally not possible with rotating analyzer ellipsometers.

Software

The WINDOWS 98, ME, 2000,XP operating

software features pull-down menus and help

functions. The software package calculates n, k,

and d for substrates, single films and multi-layers.

The user can store models and simulation curves

that are used for calculation. Data can be entered

from the ellipsometer, the keyboard or an external

file. An interactive program for calculating multi-

layers is also included.

Measurement of:

∆, ψ

Substrate, bulk material (n, k)

Thickness of single or multi-layer

by use of a graphical simulation curve or

a stored model

Thickness and refractive index of a single layer

Thickness and refractive index of multi-layers

Film Library The EL X Research Ellipsometer software is prepared for a model and film library with

predetermined measurement parameters allowing the operator to select an application and

quickly execute a measurement. The film library with films stack of up to 9 layers can easily

be extended to include user defined film structures.

Easy alignment tool

Auto align option The auto align option automatically corrects for sample topography and bow of wafers. It

detects the deviation of the sample surface from its best highest position and automatically

corrects the tilt.

Micro spot option

Ellipsometric measurements can be carried out on sample areas smaller than 50 microns by

50 microns. Sample areas with small lateral dimensions can be analyzed using the micro spot

option together with a mapping option.

All ellipsometers need the beam

to be accurately aligned with the

sample. In order to make this

alignment much quicker and

easier for the operator, the EL X-

01R has an integrated laser

alignment tool. This effectively

removes operator errors resulting

from incorrect or non-alignment

of the sample. The software can

be set to prompt the operator

when alignment in needed.

Software Functions

All measurement data are

stored in a list. Such a list is the

basis for each further operation

with measurement data

Each single list element can be

addressed and edited.

Additional to this layer

thickness marker can be created

In an active list window a list

manipulation menu can be

activated simply by pressing the

right mouse button. Several

functions can be started from

this menu, for example filter

and statistic functions. Each

function operates only with

activated (black marked)

elements.

Software Functions

For interactive simulation one

parameter of a layer (multi-

layer) can be selected and

changed.

For presentation of simulation

curves there are two

possibilities. First only one

layer of the multi-layer system

is shown and second the

complete multi-layer system is

shown as simulation curve.

Simulation graphics can simply

be stored in the WMF-format

and loaded by text processing

programs. Additional to this

simulation data itself can be

stored in an ASCII-file for data

exchange.

Specifications

Speed Typical measurement including data analysis 1 ~ 2.0

seconds

Thickness range transparent films 0 - 6000 nm

Thickness range absorbing films 0 - 6000 nm

Accuracy of measured Refractive

index 0.0001

Accuracy of film thickness +/- 0.001 nm for 10 nm SiO2 on silicon

Stability Long term ( months ) +/- 0.01deg in delta

Measurement time 1 s ~ 2.0 sec (selectable )

Sample stage Wafer chuck up to 150 mm diameter (option)

Sample stage adjustments Tilt and height

Sample alignment Laser alignment, automatic tilt correction unit (option)

Standard wavelength 632.8 nm

Optional wavelength 543 nm, 594 nm, 612 nm, 633 nm and 1150 nm or by

request