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    ArnoSmets

    WorkingPrinciple

    of

    a

    SemiconductorBasedSolarCell2.4Chargecarrierexcitation

    Week2

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    Conductionband

    Valence

    band

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    Silicon Structure representation in2D

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    Silicon Structure

    Freeelectron

    Hole

    (bond missing

    valence electron)

    1

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    SemiconductorMaterials

    P I N

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    nDoping

    P+

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    Energybanddiagramofndoped Silicon

    Valence Band

    Conduction Band

    E Fermi

    Thermal

    excitation

    Donor States`

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    pDoping

    B

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    Energybanddiagramof pdoped Silicon

    Valence Band

    Conduction Band

    E Fermi

    Thermal

    excitation

    Acceptor States`

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    Typical Concentrations:

    Majority Carriers

    Minority Carriers = 10

    16 cm3

    104 cm3

    SidensityincSiis5 1022 cm3

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    LawofMass Action

    Intrinsicmaterial n=p=nintrinsic =1,1X1010cm3

    Doping:At

    Room Temperature:

    ntypedoping

    p0=

    n0=ND

    n0

    (nintrinsic)2

    n0p0=(nintrinsic)2

    ptypedoping

    n0=

    p0=NA

    p0

    (nintrinsic)2

    n.p=constant

    }

    n = electroncarrierconcentration

    p =

    holecarrier

    concentration

    1,21X1020cm6

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    Example

    ntypedoping

    p0=

    n0=ND

    n0

    (nintrinsic)2

    ntypedopingexample

    p0=

    n0=ND=1016cm3

    1,21X1020

    1016=1,21X104cm3

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    Light Absorptionscenario1

    Eph=

    EG:

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    Light Absorptionscenario2

    Eph

    EG:

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    Light Absorbtion indoped material

    beforelightabsorption:

    Majority CarriersMinority Carriers =

    1016

    cm3

    104 cm3

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    Light Absorbtion indoped material

    1011now electronholepairs:

    104+1011 cm3Majority CarriersMinority Carriers =

    1016

    +10

    11

    cm3

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    Thank you for your attention!


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