eupvsec h2020 nextbase · 2018-10-08 · slide 5 nextbase | presentation objectives demonstrate...
TRANSCRIPT
Next-generation interdigitated back-contacted silicon heterojunction solar cells and modules by design and process innovations
www.nextbase-project.eu
NextBase Project Horizon 2020 projects: Backing the European PV industry
EU-funded actions from material research to market deployment
Parallel event at the European Photovoltaic Solar Energy Conference
The Square, Brussels, Belgium
13:30-18:30, Thursday 27 September 2018
Kaining Ding, JÜLICH
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 727523
NextBase
NextBase | PresentationSlide 2
(TU Delft)
(EPFL)
(CSEM)
(Meyer Burger)
(IMEC)
(FZU)
(CEA)
General Information
NextBase | PresentationSlide 3
European effort to bring IBC-SHJ technology to ahigher TRL by developing cost competitive andhigh efficiency IBC-SHJ technologies
Project acronym: NextBase
Grant agreement number: 727523
Work programme: LCE-07-2016-2017
Starting date: 01.10.2016
End date: 30.09.2019
Budget: 5,7M€
Grant: 3,8M€
Consortium
NextBase | PresentationSlide 4
14 partners from 8 European countries: 4 industry, 9 research, 1 support
Slide 5 NextBase | Presentation
Objectives
� Demonstrate IBC-SHJ solar cells with efficiency > 26.0%.� Production of highest quality wafers with lifetime over resistivity ratio > 2 ms/Ohmcm.� Introduction of transparent front stack and advanced light management for Jsc > 42 mA/cm²� Development of novel contact materials and contact designs for fill factor (FF) > 82% and Voc > 740 mV.
� Demonstrate IBC-SHJ solar modules with efficiency > 22.0%. � Development of 60-cell interconnection and anti-reflection coating (ARC) for cell-to-module (CTM) ratio > 95%.� Implementation of encapsulation with relative power decrease <5% after degradation.
� Develop an industrial prototype PECVD reactor for IBC-SHJ solar cells. � Production of 6-in wafer with lifetime > 2ms with patterned doped layer.� Demonstration of minimum throughput of 10 wafers per hour.
� Develop processes that allow IBC-SHJ solar module cost of <0.35 €/Wp. � Development of high quality n-type wafers by low-cost multi-pulling process.� Development of various cost competitive patterning and interconnection techniques.
Workpackage Structure
NextBase | PresentationSlide 6
(TU Delft)
(EPFL)
(CSEM)
(Meyer Burger)
(IMEC)
(FZU)
(CEA)
Fabrication of high quality wafer
Slide 7 NextBase | Presentation
NC production of highest quality n-type wafers with lifetime over resistivity ratio > 2 ms/Ohmcm.
� Ingot growth by NC, wafering at MB, testing at imec/CEA/CSEM
� High quality achieved after testing of trial ingots at partners site
� Testing of multi-pulling process to reduce ingot fabrication cost
NextBase’s efficiency chart
Slide 8 NextBase | Presentation
Steady progress of cell efficiency for various patterning techniques since NextBase start
� Contact stack design:
NextBase’s efficiency path
Slide 9 NextBase | Presentation
� Nano-crystalline Si doped layers
(low Eact) improve transport for n-
and p- contact stack
� Only for p-contact: wide bandgap
improve transport selectivity p-contact
Project goal: η > 26 % ↔ FF > 83.5 %
[1] P. Procel, et al., Sol. Energ. Mater. Sol. Cells (2018)
� Patterning design:
NextBase’s efficiency path
Slide 10 NextBase | Presentation
� Optimal n- & p-contact stack
� 200 µm c-Si n-type bulk
� Full TCO/metal coverage on n & p
� 60 % p-finger coverage
� Small pitch
[1] P. Procel, et al., Sol. Energ. Mater. Sol. Cells (2018)
Project goal: η > 26 % ↔ FF > 83.5 %
Cell add-on option 1
Slide 11 NextBase | Presentation
Modulated surface texture
Lifetime above 1ms achieved after damage remove etch (DRE)!
Cell add-on option 2
Slide 12 NextBase | Presentation
CSEM/EPFL* imec FZJ HZB TUD0
1
2
3
4
5
6
* extracted from measured R& EQE
Tota
l Loss
es
(mA
/cm
2)
Front side Rear side TOTAL
Stoichiometric µc-SiC:H
Highly transparent andanti-reflective front stack
Simulated results
Tool development
Slide 13 NextBase | Presentation
90.25 cm²
Upscaling to full size M2 wafer ongoing
eta (%) FF (%)Jsc
(mA/cm2)Voc (V)
HJT (149cm2) 23.7% 81.9% 39.5 0.733 IBC (90.25cm2) 23.8% 79.6% 40.6 0.735 IBC (90.25cm2); x2 ARC 24.2% 79.8% 41.3 0.735
Module interconnection
Slide 14 NextBase | Presentation
Hybrid woven fabric interconnection � Upgraded to: 3D Weave interconnection� Liquid encapsulation tests
Smartwire contacting technology
Anti reflective coating
Slide 15 NextBase | Presentation
Cost analysis
Slide 16 NextBase | Presentation
� IBC is competitive with SHJ� Chance for EU PV manufacturing
1GW scenario:
SHJ Module @ 22.5%Cell Eff. : 0.35 €/Wpk
IBC Module @ 24%Cell Eff.: 0.34 €/Wpk
0
10
20
30
40
50
SHJ SHJ-IBC SHJ SHJ-IBC SHJ SHJ-IBC
Co
O (
c€/W
pk)
Wafer Cell Module
35 c€/Wpk
Simulation #1 Simulation #2 Simulation #3
Progress summary
Slide 17 NextBase | GA04 Jülich
� Wafer target (lifetime over resistivity ratio > 2 ms/Ohmcm) reached
� Jsc target (> 42 mA/cm²) reached
� FF above 81 % achieved
� Laser and shadow mask patterning very promising to reduce cost.
� One-cell module and 2 x 2 dummy module demonstrated.
� Industrial prototype PECVD reactor built.
� Higher throughput 156 x156 mm² IBC-SHJ for module to be targeted.
� Calculation show comparable IBC-SHJ cost at cell and module level.
� Device simulation for IBC-SHJ established.