European Integrated Activity of Excellence and Networking

for Nano and Micro-Electronics Analysis

Sixth Framework ProgramResearch Infrastructures

Analytical Network forNanotech

R. Balboni

IMM, May 8, 2009

2

ANNA – Analytical Network for NAnotech

• Overview

• Networking

• Transnational Access

• Joint Research

3

ANNA – Analytical Network for NanotechFBK (ex ITC-IRST), Povo, Trento, Italy Research institute.

Coordination of the I3.

Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie IISB, Erlangen, Germany

Research institute.

Numonyx, , Agrate Brianza, Milan, Italy IC manufacturer.

MEMC, Novara, Italy Silicon wafer manufacturer.

NCSR Demokritos, IMEL Research Institute devoted to Silicon technology.

Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, Budapest, Hungary

Academic institute devoted to interdisciplinary research

Surface Science Laboratory (SSL),University of Patras, Greece

Academic institute

Atominstitut der Österreichischen Universitäten, Vienna Technical University, Vienna, Austria

Academic institute

University of Salford,United Kingdom

University - sub-nanometre MEIS depth profiling.

PTB, Berlin, Germany National Metrology Institute: Laboratory at the electron storage ring BESSY II in Berlin

CNR, Roma, ItalyInstitutes IMM (Bologna section) and IC (Roma section)

Research institutes

Intel Performance Learning Solutions, Analytical Laboratories, Intel Ireland

Industrial research laboratory

4

ANNA – Overview

• Duration: 2007 to 2010

• 12 partners from 7 European member states

• Funded by the European Commission within Framework

• Programme 6 - Research Infrastructures – Integrated

Infrastructure Initiative (I3)

• Budget: 7.5 M EUR; Funding: 5.65 M EUR (75%)

• Objectives– To integrate and enhance European analytical resources– To create centre of excellence for analysis of nanotechnologies

and a multi – site laboratory– Long term vision: integrated distributed laboratory

5

ANNA – Overview: Analysis / Metrology / Characterisation

• X-Ray technologies: – TXRF, TXRF - NEXAFS, GIXRF, XRR, XRD

• e-beam technologies: – TEM, HRTEM, STEM

• Ion beam technologies: – SIMS, ToF-SIMS, MEIS

• Surface characterization: – XPS, AES, UPS, LEISS, EELS

• Chemical analysis: – AAS, GCMS, Sample Preparation

• Electrical characterisation: – C-V, C-T, I-t, C-G, SPV, ELYMAT, DLTS

• Optical metrology: – spectroscopic ellipsometry, defect inspection, FTIR

• Samples: – test structures, wafers, contamination and calibration standards

6

ANNA – Management and Networking Activities

• NA1: Management of the Consortium

• NA2: Establishment of analytical reference laboratories– status evaluation– ’golden labs’ (8 Partners with specialized expertise)– accreditation (e.g. ISO 17025 – laboratories)

• NA3: Formation of European joint analytical laboratory– integration– web interface (www.anna-i3.org)– user manual (for joint laboratory and transnational access)

• NA4: Standardization of samples and methodologies– standardization– matching– references

7

ANNA – Transnational Access

• More than 1000 days of European Community funded Transnational Access to

18 infrastructure (laboratories, clean room, metrology) at 8 locations

• Access to ANNA instrumentation and analytical services is either in person

("hands-on") or remotely by suitable (electronic) communications

• Potential users of the infrastructure are researchers or groups of researchers

from small & medium enterprises, large scale industry, research centres, or

universities

• Interested users apply for research Access by submitting a short project

proposal

• Selection of user proposals is by "peer review" on the basis of the

scientific/technical merit (innovation, scientific and technological relevance).

Priority will be given to first-time users and to users in countries without a

similar infrastructure

• Access is available from 2008 to 2010

– Note: Transnational Access means that users groups from the same country where the operator of the infrastructure is established are not eligible for access.

8

ANNA – Transnational Access

TA1: PTB @ BESSY II• Synchrotron radiation beam lines for TXRF, GIXRF, XRR

TA5: MFA - facility• Ellipsometry• Makyoh

TA2: irst - SIMS & MICRO• SIMS• ToF-SIMS IV• SEM JSM 7401F• AFM, XPS

TA6: IISB - laboratories• Ultra trace analysis• Organic contaminationanalysis• Wafer surface preparation and contamination

TA3: CNR - STEM facility• TEM-STEM

TA7: IMEL - laboratories• Electrical and opticalcharacterisation• Fabrication of test structures

TA4: Atominsititut• ATI-x-ray lab

TA8: MEIS – facility atDaresbury laboratory• MEIS

9

ANNA – Joint Research

• Enhancement and development of methodologies

• Improvement of ANNA services

JRA1 Highly sensitive detection of inorganiccontamination from Li to U

JRA2 Comprehension of organiccontamination on wafer surfaces

JRA3 Accurate characterisation of ultra shallow junctions

JRA4 Nanofilms characterisation

JRA5 Investigation of local strain at sub-micron scale

JRA6 Characterisation of nano-crystals

10

Mid-Term (year 2) review

• NA– Positive comments about coordination and management 'highly effective'.

Advisory board very reactive and involved – Project communication has been very well organized – Accreditation in delay, but understandable.

• TA– Open up to 25% to different fields than microelectronics

– Preference to projects that ask to use a multitechnique approach

• JRA– Very impressive the cross checking: good and important work – True joint research activity, successful and flexible as demanded – In line with expectations and also publications ok.

Very positive overall evaluation of the Consortium

11

IMM – Bologna in ANNA

• Budget– 899,510 € eligible, 508,555 € financed (57 %)

• Impegno– 71 m/m– TEM (CBED, HREM, HAADF STEM) and X-rays structural

characterisation (lab and synchrotron)

Research and

Technological

Development

Management Coordination /

Networking

Transnational

Access

Other Total

Eligible 672,491 22,493 131,871 54,655 18,000 899,510

Funded 314,860 22,490 101,205 52,000 18,000 508,555

12

IMM in ANNA

• Networking– NA2-Accreditation of the Electron Microscopy Lab

• Requested for– Strain measurement in silicon by CBED– Dopant concentration measurement by TS-STEM

• ISO 17025 accreditation is a project specific request in view of the establishment of the Golden Lab

– Management Manual and Technical – definition of the Lab Responsibles– To be completed by end of 2009

– NA3-Formation of the Joint Lab• User manual

13

IMM in ANNA

• Transnational Access– TEM analysis by STEM-HAADF, CBED e HREM)– Activity started in 2008– 2 accesses up to now

• 2 people, University of Cork and INTEL Ireland “Strain analysis on Ge nanowires”

• 1 people, University of German Federal Armed Forces, “HREM of oxides on Si”

– Sono pervenute altre 4 richieste nei successivi calls (su un totale di 57 per ANNA), 2 sono già state selezionate per l’accesso.

14

ANNA - JRA3: Tilted Sample Annular Dark Field Scanning Transmission Electron Microscopy (TSADF-STEM)

Messa a punto di una tecnica ADF-STEM quantitativa per la determinazione dei profili di drogaggio in giunzioni ultra-sottili in Si. Modifica originale di una precedente tecnica dovuta a Pennycook et al. (1999).

E’ stato necessario comprendere i meccanismi di contrasto operanti in ogni condizione sperimentale. Questo ha permesso di definire una procedura per filtrare/selezionare il segnale voluto.

Nel caso dell’As in Si è stato possibile determinare la distribuzione del drogante alla superficie del campione dove falliscono tecniche spettroscopiche come il SIMS.

La sensibilità della tecnica nel caso dell’As è ~ 1% mentre la precisione della procedura quantitativa è dell’ordine del 10%.

• The aim is to define methodologies able to give a more complete characterization of ultra shallow dopant distributions

15

Quantitative determination in 5 keV 2x1015 As/cm2 implanted Si

A. Parisini, V. Morandi, S. Solmi, P. G. Merli, D. Giubertoni, M. Bersani and J. A. van den Berg, Appl. Phys. Lett., 92, 261907 (2008).

as-implanted

800 °C for 3 min

On-axis ADF-STEM

TSADF-STEM

16

A. Armigliato, R. Balboni and A. Parisini ECS Transactions, 10, 57-64, 2007.

A. Parisini, D. Giubertoni, M. Bersani, V. Morandi, P. G. Merli, and J. A. van den Berg MRS Symposia Proceedings No 1026E (Matreials Research Society, Pittsburgh, 2007), 1026-C09-04.

A. Parisini, D. Giubertoni, M. Bersani, M. Ferri, V. Morandi and P. G. MerliProceedings of the 8th Multinational Congress on Microscopy, Prague, 18-21 june 2007, p. 43.

A. Parisini, V. Morandi and S. A. MezzoteroProceedings of the 14th European Microscopy Congress, Eds. M. Luysberg, et al., 1-5 September 2008, Aachen, Germany, vol.1, p. 145.

A. Parisini, V. Morandi, S. Solmi, P. G. Merli, D. Giubertoni, M. Bersani and J. A. van den Berg Appl. Phys. Lett., 92, 261907 (2008).

A. Parisini, V. Morandi, J. A. van den Berg, M. A. Reading, D. Giubertoni, P. Bailey, T. Noakessubmitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

A. Parisini, V. Morandi and S. A. MezzoteroMicroscopy and Analysis, in press (2009).

ANNA - JRA3: communications and publications

17

ANNA - JRA4.

Fig. 6. Example of thickness measurement in a (011) cross-sectional HREM micrograph obtained on an HfSiOx/SiO2/Si high-k structure (sample D07).

HfSiOx

SiOx

1.4 ± 0.5 nm 2.1 ± 0.5 nm

1.1 ± 0.5 nm 1.1 ± 0.5 nm

Glue

Misura dello spessore: confronto tra i risultati ottenuti con HREM, MEIS, XPS, SE:

a) emerge immediatamente il problema della scala su cui sono fatte le misure e

della conseguente necessità di una misura dell’uniformità degli spessori;

b) l’evidente rugosità dei films induce inoltre a considerare più attentamente la misura dello spessore.

• The development of methods for the chemical, structural, optical and electrical characterization of 1-10 nm thick (oxy)nitrides and high-k materials films.

18

ANNA - JRA4.

Un primo approccio alla misura HREM dello spessore su film rugosi:

Osservazione: differenti trattamenti portano a differenti valori di Ls.

Definizione di misura locale: profilo d’intensità mediato su regioni d’estensione pari a Ls

Diverse misure locali sono effettuate su diverse immagini e i risultati sono espressicome:

X X

Gli spessori dei vari film sono definiti tramite i punti di flesso del profilo mediato

19

Communications and publications

M. Fried, P. Petrik, J.A. van den Berg, M.A. Reading and A. Parisinisubmitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

J.A. van den Berg, M A Reading, A Parisini, M. Kolbe, B. Beckhoff, S. Ladas, P. Petrik, P.Bailey, T. Noakes , T. Conard and S. De Gendt

submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

M. Reading, J. A. van den Berg, P. Bailey, T. Noakes, P. Zalm, A. Parisini, T. Conard and S. De Gendt

submitted to J. Vac. Sci. Technol. B (2009)

Il confronto delle misure ottenute con le diverse tecniche è attualmente in corso.

Nel prossimo futuro: confronto tra spessore strutturale (HREM) e composizionale (HR ADF-STEM o TSADF-STEM) sulla stessa area.

ANNA - JRA4

20

JRA5

•This activity aims at setting up a method to measure the mechanical stress in present and future generation devices by TEM-CBED. •The results of this technique will be validated by comparison with electrical measurements of stress-sensitive devices and with the results of numerical calculations.

XY

Z

0 50 100 150 200 250 300-10

-8

-6

-4

-2

0

2

4

6

8

10

12

0 50 100 150 200 250 300-10

-8

-6

-4

-2

0

2

4

6

8

10

12

0 50 100 150 200 250 300-10

-8

-6

-4

-2

0

2

4

6

8

10

12

Str

ain

(x1

0-4)

distance from top of active area (nm)

Ezz

The procedure for TEM-CBED sample preparation by FIB was found NOT to be a trivial issue.

21

JRA5 - IMM

• A reliable sample preparation procedure was defined, using a low energy

final finishing (5 KeV) during FIB milling.

• CBED measurements were validated by comparison with strain data

obtained from process simulations and by measurements of samples with

a known strain trend.

• The impact of mechanical strain on the electrical properties of devices was

shown both in terms of mobility modifications and in terms of defect

generation

• The possibility to measure the mechanical strain induced by layers doped

with different impurities was demonstrated

• Pubblicazioni– A. Armigliato, R. Balboni and A. Parisini, ECS Transactions, 10, 57-64, 2007.– R.Balboni, G. Borionetti, L. Moiraghi, G.Vaccari, M.L. Polignano, G. P. Carnevale,

F. Cazzaniga, I. Mica, F. Sammiceli, submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

22

Activity number JRA6 Start month 6 End month 48

Activity Title Characterization of nanocrystals

Participant number 6 1 5 9 11

Participant short name MFA ITC-irst IMEL USAL CNR-IMM Total

Total Person-months 15 13 15 13 12 68

Objectives and expected impact: Nanocrystalline semiconductors embedded in dielectric matrices (e.g. silicon rich oxide, ion implanted silicon oxide, SixOyNz, etc.) are currently under investigation for use in Si-photonics and in memory devices. The aim of this JRA is to develop and improve metrologies for the measurement of nanocrystal properties.

JRA6

23

20 25 30 35 40 45 50

Si 111

inte

nsi

ty

2 (deg)

wafer 7wafer 12wafer 15wafer 16

26 28 30

inte

nsity

2 (deg)

OP-GID patternsThe nano-crystals dimensions estimated from XRD measurements (~4 nm) are in substantial agreement with the the sizes determined by PL measurements.

Deposition of Silicon Rich Oxide (SRO) by Plasma Enhanced Chemical Vapor Deposition (PECVD) process on silicon blank wafers, followed by thermal annealing.

▪ nc-Si from SUPERLATTICES (SiO2/SRO):

▪ nc-Si embedded in amorphous matrice

-The surface and interfaces evolution have been followed by XRR;-The occurrence of nano-crystals have been determined at 1000°C.

A series of samples (PECVD) annealed at different temperatures (from 600°C to 1150 °C).

JRA6 – X-ray analysis results

• Pubblicazioni– P. Petrika, S. Militab, G. Puckerc, A. G. Nassiopouloud, J. A. van den Berge, M. A.

Readinge, M. Frieda, and T. Lohnera, M. Theodoropouloud, S. Gardelisd, M. Barozzic, M. Ghulinyanc, A. Luic, L. Vanzettic, A. Picciottoc, submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

24

ANNA - Conclusioni e prospettive

• Commenti– È una delle principali fonti di finanziamento del reparto

Strutturistica– Nella sua pur complessa struttura, offre sufficiente spazio

all’attività di ricerca– ANNA e l’attività di Transnational Access offre opportunità di

contatti con altri gruppi in Europa– Accreditamento

• Difficile adattare la nostra realtà ed i criteri previsti da ISO17025

• CE verso l’accreditamento• Italia ed Europa

• Prospettive ?– In FP7 gli i3 hanno mantenuto i finanziamenti precedenti – Proposta di un progetto per i Golden Labs ?