euv lithography and source...
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EUV lithography and Source Technology
History and Present
Akira Endo Hilase Project
22. September 2017
EXTATIC, Prague
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VIS
Optical wavelength and EUV (Extreme Ultraviolet)
Characteristics of EUV light
wavelength a few nm - a few 10 nm
・ propagation only in vacuum
・ reflective optics only
13.5nm
92eV
From Prof. Atwood
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Nature Photonics, January 2010
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Lithography wavelength evolution
K1 λ NA
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CO2 laser
>20kw 100kHz
EUV power at IF
> 250W 13.5nm 2%BW
(fwhm:0.27nm)
EUV power at plasma
> kW
Sn droplet
EUV C1 mirror lifetime : > 12months (800Bpls) (R10%loss=Sn deposition <thickness 1nm )
Configuration of EUV source
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10
pre-pulse expansion CO2 laser irradiation
→
Magnetic ion guide
Full ionization
Small droplet (d=10μm)
D ~100μm
Optimization of pre-plasma conditioning
Optimize density, temperature and spatial distribution
for main pulse heating to achieve high EUV conversion efficiency
and full exhaust of Sn atoms
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12
Laser-produced plasma
X-Rays
ionization of target material
heating by inverse Bremsstrahlung
hot, dense plasma
(Te> 50eV;1020 < ne< 1024 e/cm3)
emission of Bremsstrahlung and
charact. x-rays
BWmradmms
NBrilliance Photonen
%1,022
Scalable!
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CO2
Yag ω
1/100
Cut off density :Nc
1
CO2 laser light is absorbed by low density
plasma. Thermal boiling of liquid Sn is avoided.
Distance0
Ele
ctr
on
de
nsity
Laser
Laser plasma
interaction region
X-ray emission
Hot dense plasma
nc
Distance0
Ele
ctr
on
de
nsity
Laser
Laser plasma
interaction region
X-ray emission
Hot dense plasma
nc
EUV radiation is emitted from hot dense plasma
near the electron critical density nc.
2
2
0c
e
mn
)cm(1011.1
n 3
2
21
c
: wavelength in mm
CO2 laser is efficient, clean driver for Sn EUV plasma
Generated EUV is reabsorbed by plasma. CO2 laser
produced plasma reduces EUV propagation loss.
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EUV spectra from Sn plasma
Conversion efficiency
dependence on the laser intensity
CE: 2.5% - 4.5% with CO2 laser
Laser intensity: 3x1010 W/cm2
*energy:30mJ
*Pulse width:11ns
*Spot size: d=100um
1.064um
10.6um
0
1
2
3
4
5
6
1.0E+09 1.0E+10 1.0E+11 1.0E+12
Laser intensity [W /cm 2]
CE [%]
C O 2 15ns
C O 2 100ns
Nd:YAG
0
5000
10000
15000
20000
25000
30000
35000
40000
10 11 12 13 14 15 16 17 18 19 20
wavelength [nm]
inte
nsity
[a.u
.]
CO2
Nd:YAG
Target material : Sn plate
Target material : Sn wire
Narrow in-band spectrum with CO2 laser
Sn plasma generated by Nd:YAG and CO2 laser
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Selection of Reflective optics
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:2nd EUV Symposium, October 1. 2003, “Condenser Erosion Observations in the ETS” Lennie Klebanoff, SNL
LPP source and mirror damage:ETS with Xe spray jet
150M shot
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Analysis of ion exposed samples
Rms: 0.20 nm Rms: 0.41 nm
Implanted Xe in Mo/Si multilayer
Ion energy 5 keV Ion dose 2.8 X 1016 atoms/cm2
Reference (10 Mo/Si bilayer)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
5 10 15 20 25 30Incidence angle (deg)
Re
fle
ctivity
(%)
Reference
2keV, 3.7E16/cm2
3keV, 3.7E16/cm2
5keV, 2.8E16/cm2
reference fitting
2kV fitting
3kV fitting
5kV fitting
0
0.2
0.4
0.6
0.8
0 5 10 15Depth (nm)
Xe
ato
mic
(%
)
Absorption by implanted
Xe is negligible
Reflectivity measurement AFM
TEM
XPS Mixing
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Plasma in magnetic mirrors
g: unstable
g: stable
B
22
2
R
BR
qB
mvv II Curvature drift
x
z
y
axial
radial
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Silver line in tin vapor
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Simulation results of particle positions ( zx-plane)
300ns
50ns 100ns 150ns
200ns 250ns
z (meter)
x (
mete
r)
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Simulation results of particle positions ( yx-plane)
y (meter)
x (
mete
r)
B
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22
Sn vapor measurement by laser induced fluorescence (LIF)
Band-pass filter
Heater
Nd:YAG laser
Z-a
xis
Dye laser
ICCD Camera
Micro-dispenser
Target
tin sphere
Focusing lens
YAG laser
20 mm
LIF image of tin vapor (109 W/cm2, after 3ms)
Neutral
characteristics
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Laser induced fluorescence (LIF) imaging for tin atom
fluorescence
0 cm-1
absorption
5p6s3P01
5p2 3P0
5p2 3P1
317.5 nm 286.3 nm
Grotrian diagram for tin atom
Advantages
Spectrally selective pumping and
observation
High sensitivity
Cross sectional imaging
with a sheet laser beam
Principle of LIF Neutral characteristics
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Definition of Source Power
• 13.5nm, 2% band width, 2ϖ Sr
• Power is described at plasma, and
IF (Intermediate focus)
• Average power, burst avrage power
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Intemediate Summary
• EUV source effort started in 1997 in US for the next generation optical lithograpy.
• Commercial prototypes in 2003 were not matured for factory use.
• New architecture established based on Tin droplet and CO2 laser with magnetic plasma guide.
• Laser produced plasma (LPP) selected, >10 years engineering study to fulfill the requirements on average power and C1 mirror life time.
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Historical interests
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Prototype machine: Engineering Test Stand (ETS) by EUV LLC
From Semiconductor International, June 2001
LPP(Lasre produced plasma) EUV source; 1.6kW, 2kHz, CE 0.13%
Target: Xe gas jet
Laser: Nd.YAG 280mJ x 3, 2kHz, 1.1 x DL
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LPP ( laser produced Xenon plasma) EUV System
LPP
Chamber
Flying CircusⅡ
Nozzle System
Spectrograph
TMP
Laser
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Xenon Jet experimental test-stand
Liquid Xenon Jet System
Xe Jet
50 mm
Nozzle System
Xenon Liquefaction
System
Testing
Chamber
Xe Temperature: 160K - 190K
Xe Pressure: <5MPa
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AMP module
Nd:YAG driver laser based on LD pumped rod module
Master Oscillator Isolator
Pre-AMP4 Pre-AMP3 Pre-AMP2 Pre –AMP1
Main-AMP1
-Average Power: 500 Watt
-Rep. Rate: 10 kHz
-Pulse duration: 30 ns
Main-AMP2
Main-AMP3
Main-AMP4
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Driver Laser System - Beam Profile -
LPP
After 3-Main Amplifier
350W
Before Main Amplifier
60W
-We achieved 500 Watt @ 10kHz.
-Further driver laser system improvements:
Deformable mirror (beam quality)
Shorter pulse duration oscillator (several ns)