fabrication and characterization of cnt/ni/tin/si bridge ...the cnt - v di el as figure nique inc...

Fabrication and characterization of CNT/Ni/TiN/Si bridge structures.

Report 2014-03

Prepared by: Plasmionique Inc. Lab: 1650 boul. Lionel Boulet

Varennes, Québec Canada J3X 1S2

Jean-Baptiste A. Kpetsu, ing., M.Sc.

Andranik Sarkissian, PhD PBN: 14297 8295 RN0001

Tel: (450) 929 8154 Fax: (450) 929 8102

for DRDC Valcartier

CSA: Philips Laou, PhD (418) 844-4000 x4218

Suzanne Paradis, ing., M.Sc.

Philippe Mérel, PhD

PWGSC Contract Number : W7701-125241

14 March 2014The scientific or technical validity of this Contract Report is entirely the responsibility of the Contractor and the contents do not necessarily have the approval or endorsement of Defence R&D Canada.

© Her Majesty the Queen in Right of Canada, as represented by the Minister of National Defence, 2014

© Sa Majesté la Reine (en droit du Canada), telle que représentée par le ministre de la Défense nationale, 2014

DRDC-RDDC-2014-C202

CONTENTS

Your Partner in Your Partner in Your Partner in Research and InnovationResearch and InnovationResearch and Innovation

Plasmionique Inc.

/ 61

1. Fabrication of CNT/Ni/TiN/Si bridge structures ...................................................................... 3

1.1. SOI Batch #3A, Sample CTSoi-14N (Follow-up, complete) ............................................ 31.2. SOI Batch #3B, Process flow #3B (New, complete) ......................................................... 31.3. SOI Batch #4A, Process flow #4A (New, started) ............................................................ 31.4. SOI Batch #5A, Process flow #5A (New, started) ............................................................ 4

2. Characterization of potentially good CNT bridges ................................................................... 42.1. Thickness measurement (CNT and Si bridge) ................................................................... 42.2. CNT growth area measurement ......................................................................................... 62.3. Mass measurement of CNT film ....................................................................................... 6

Bibliography ..................................................................................................................................... 9Annex 1: Samples characteristics and follow-up tables (#10) ....................................................... 10Annex 1A: Sputter deposition with the "CVC New-Sputter" ......................................................... 11Annex 1B: CNT growth with the PECVD system .......................................................................... 13Annex 1C: Sputter deposition with the "Plasmionique SPT330" system ....................................... 14Annex 1D: Lithography processes ................................................................................................. 15Annex 1E: Wet etching/cleaning processes ................................................................................... 29Annex 1F: Plasma etching/cleaning with Tegal T901e RIE system .............................................. 40Annex 1G: Microwave Plasma ashing/stripping with PLASMA-PREEN II-973 system ............... 55Annex 2: Batch #3A - Sample CTSoi-14N (completed) ................................................................ 56Annex 3: Batch #3B - Sample CTSoi-13bN .................................................................................. 57Annex 4: Batch #3B - Sample CTSoi-14bN .................................................................................. 58Annex 5: Batch #3B - Sample CTSoi-14cN .................................................................................. 59Annex 6: Batch #3B - Sample CTSoi-15N .................................................................................... 60Annex 7: Batch #3B - Sample CTSoi-19N .................................................................................... 61

Plasmio

1. Fab

1.1. CNT bridthe particmicrowavsuccessfuobtained Bridges #electricalparameteand (Annof the CN

Figure 1 :

1.2. The CNTCTSoi-14describedfollow-up1B) for C1, AnnexTegal T9Photomicsamples iappear to

1.3. The procTSoi-11b

onique Inc

brication

SOI Bdge fabricaticularly promve plasma asul in removinfor the first

#1 and #2 al/thermal chers are availanex 1, AnnexNT bridge ar

: SOI Batch #3

SOI BT bridge fabr4cN, CTSoi-d in the seconp tables of (A

CNT growth x 1E) for wet01e RIE, an

crographs anin Annex 3,

o be potentia

SOI Bcess flow #4b, TSoi-12,

c.

n of CNT

Batch #3ion results fomising sampshing methong the remait time on thalso collapsaracterizatioable in the fox 1G) respece added for t

3A, Process fl

Batch #3rication for th-15N, and Cnd to last repAnnex 1, Anwith the PE

t etching prod (Annex 1,

nd SEM micrAnnex 4 , Ally good and

Batch #44A was also

TSoi-12b,

Pag

T/Ni/TiN/

3A, Samplor SOI Batchple TSoi-14Nd prior to CNining burnt/p

his sample’sed before th

on. Last MWollow-up tabctively for ththose last fab

ow #3A: SEM

3B, Procehe five SOI TSoi-19N) wport. Precisennex 1A) forCVD, ( Ann

ocesses, (AnnAnnex 1G)

rographs areAnnex 5, Annd are further

4A, Procedescribed inand TSoi-1

ge 3 / 61

/Si bridg

le CTSoi-h #3A sampN which wNT growth. popped phot

previously he CNT groW stripping,bles of (Annhis sample. Pbrication ste

M images of CT

ss flow #Batch #3B s

was performe process parr deposition wnex 1, Annexnex 1, Annexfor resist as

e provided atnex 6, and Aanalyzed in

ss flow #n the second8) are bein

ge struct

-14N (Folples were sho

was planned Although th

toresist on thbroken Brid

owth makin, lithography

nex 1, AnnexPhotomicrogeps in Annex

TSoi-14N brok

#3B (Newsamples (CT

med using therameters andwith the CVx 1D) for lithx 1F) for dry

shing/strippint the various

Annex 7. Manthe characte

#4A (Newd to last rep

ng processed

tures

llow-up, cown in last to be clean

he MW plasmhe sample, adge #3 (Figug CTSoi-14y, and CNTx 1B), (Annegraphs and Sx 2.

ken Bridge#3

w, compleTSoi-13bN, Ce related procd data are av

VC sputter, (Ahography proy etching prong with the Ps process flowny CNT briderization sec

w, started)port and 5 sad according

completereport, excened using ama ashing w

aligned CNTure 1). How

4N unsuitablT growth prex 1, Annex

SEM microg

with aligned C

ete) CTSoi-14bNcess flow

vailable in thAnnex 1, Anocesses, (Anocesses withPlasma-Preew steps for tdges of this bction.

) amples (TSo

gly. First al

e) pt for

a new wasn’t T were wever, le for rocess x 1D), graphs

CNTs

N,

e nnex nnex h the en. the batch

oi-11, lready

Plasmio

availablefabricatioalready imight be

1.4. This batcreceived ±0.5%. Tuse will b

2. ChaVolume selected Cliteratureconditionexperimewide rangCNTs [2]

2.1. The CNT

- Vdielas

Figure

onique Inc

process daon is still ondicated thaone of the m

SOI Bch of samplewith device

The CNT bribe determine

aracteriz(thickness aCNT samplefor SWCNT

ns [1]. Theental setup ige of ~0.7-6], [3].

ThicT layer thicknVeeco optical

ifference oflectrodes ands a hole in th

e 2 : Veeco Op

c.

ata are alsongoing, maiat stiction bmain challen

Batch #5es has been e nominal thidge fabricated from ongo

zation ofand growth es to help estT films 10 μ

ermal conduis ready. Ro6600 W/m K

ckness meness was estl profiler apf reflectivityd Si Handle)he whole stru

tical profiler m

Pag

included iin results aretween the ges for this p

5A, Procestarted late

hickness of tion is howeoing first cha

f potentarea) and m

timate their μm thick buuctivity meoom temperK are reporte

easuremtimated usingppears unsuity between ). The low reucture (Figur

measurement

ge 4 / 61

n the followre only expearly releasprocess flow

ss flow #ely using the

3±0.5 μm aever currentlaracterizatio

tially goomass measuCNT densit

ut could varyeasurements ature thermed for indivi

ent (CNTg various tootable for thithe CNT leflectivity ore 2).

of CNT layer

w-up tablespected for ned Si bridge

w.

#5A (Newe new SOI pand a BOXly on hold aon and analy

od CNT urements arety. Densitiesy a lot depe

are also tmal conductiv

idual and bu

T and Si bols: is kind of mayer and thf the CNT la

r thickness for

s of Annex next report. e and the h

w, started)prime wafer

X nominal thas the precisses of previo

bridgese being per of ~2-3% a

ending on sato be perfovity values ulk single w

bridge)

measurementhe surroundayer makes

r sample CTSo

1 but sincPreliminaryandle under

) rs that have hickness of e process floous batch res

s rformed on are reported iample preparformed oncein the extre

wall and mult

s due to theding layers the bridge a

oi-14N Bridge

ce the y tests rneath

been 1 μm ow to sults.

some in the ration e the emely tiwall

e high (TiN

appear

e#3

Plasmionique Inc.

/ 61

- Nikon Eclipse LV150 optical microscope was used to measure the stage displacement required (in the vertical Z-direction) to focus respectively on the top surface (Tip) and bottom (TiN layer) of the CNT film. Since the Z-displacement knob graduation is in arbitrary units, the system has to be calibrated for the conversion of this graduation unit into standard length units. A first calibration was done using an available Veeco Step Height Standard (SHS) which was known to have a height of 8.374 μm. The challenge was however to know exactly when the focus was on the top of the step and in the trench. Calculated conversion factors are shown in Table 1 and hence estimated thicknesses for the samples’ CNT layers are shown in the second to last column of Table 2.

Table 1 : Veeco SHS based Z-displacement conversion factor for the Nikon LV150 optical microscope stage

Sam

ple

nam

e

Dat

e

Nik

on E

clip

se L

V15

0 m

icro

scop

e O

bjec

tive

Stag

e m

ovin

g U

p or

Dow

n

Tre

nch

Lev

el (g

rad)

= K

nob

Gra

duat

ion

Uni

t St

ep L

evel

(gra

d) =

Kno

b G

radu

atio

n U

nit

Step

Hei

ght (

grad

) = K

nob

Gra

duat

ion

Uni

t

Con

vers

ion

fact

or (μ

m/g

rad)

- Fr

om S

HS

know

n 8.

374 μm

he

ight

Com

men

ts

Veeco (SHS) 14/02/17 X50 Down 77 47 30 0.279 This estimation of the Z-displacement conversion factor for the Nikon Eclipse LV150 stage is done using an 8.374μm-high Veeco Step Height Standard (SHS).

X50 Up 77 45 32 0.262 idem X100 Down 81 52 29 0.289 idem X100 Up 82.5 51 31.5 0.266 idem

- A second calibration of the Nikon Eclipse LV150 optical microscope stage Z-

displacement was done for each sample by measuring an additional reference distance that could also be easily measured using the Dektak 150 stylus profiler. The depth of the trench (TiN + Device layer + BOX) around each bridge was therefore measured using both methods and a conversion factor was calculated for each bridge. The challenge was also to know exactly when the focus was on the handle, the TiN surface and the CNT tip. Calculated conversion factors and estimated CNT thicknesses are shown in Table 2.

- SEM measurements of the CNT layer thickness were also performed on the samples by tilting them as much as possible (65-70°). Raw measurements indicated on SEM images in Annex 2, Annex 3, Annex 4, Annex 5, Annex 6, and Annex 7 are to be corrected afterward for the tilting angle as the SEM automatic tilt-compensation was shown to distort images only in an in-plane direction, leading to false CNT thickness measurements when used. Corrected average CNT thicknesses are shown in Table 2. Definite tip delimitation for aligned CNT samples (CTSoi-14N) leads to more reliable measurements than the unclear delimitation of the top surface of all other analyzed samples which CNTs are spaghetti-like.

Veeco SHS based estimations are seen to be completely out of range with Dektak and SEM based estimations. In fact tilt-corrected SEM measurements are thought to be more reliable as they are less operator-related.

Plasmionique Inc.

/ 61

The thicknesses of the Si bridges (device layers) are also estimated using the Dektak 150 and SEM measurements as shown in Table 3.

2.2. CNT growth area measurement Theoretical dimensions of the Ni masks (6 μm X 54 μm; 6 μm X 104 μm; 6 μm X 204 μm) could be used to estimate CNT surface coverage on the bridges. However, more precise and direct measurements were performed using a useful surface measurement feature found in NIS-Elements image analysis software. Those measurements of CNT growth areas allow for taking into account fabrication-related defects as indicated in the optical images of Annex 2, Annex 3, Annex 4, Annex 5, Annex 6, and Annex 7. For electrical/thermal characterization purposes, it should be noted that the effective CNT surface coverage might be slightly smaller than measured in some particular cases depending on the fabrication process flow used. Especially, when the TiN electrode layer is patterned and etched before Ni deposition and lift-off, Ni might also be deposited directly on the Si in TiN defect areas leading to CNT/Ni/Si growth which should not be accounted for in electrical signal from CNT/Ni/TiN/Si areas. CNT surface coverage data are available in Table 3.

2.3. Mass measurement of CNT film The CNT film mass measurement was performed using a Sartorius Supermicro 4 microbalance which was found in the Chemistry Laboratory of DRDC WS Section. This microbalance has a specified readability (resolution) of 0.1 μg. For practical operating reasons, the total sample (CNT + substrate) size and mass should not exceed approximately 2 cm X 2 cm and 400 mg respectively. The CNT weight is estimated by comparing the weight of the substrate before and after removing the CNT film. The first measurement performed on a CNT test sample (CS093-3N) yield 77.6 μg for CNTs covering an area of ~1 cm2. If such CNTs were on the Ni/TiN/Si bridges, they would have weighed between 0.25 ng and 0.95 ng respectively for the shortest and longest bridge. Those values are at least two orders lower than the resolution of the microbalance and that means there’s no point trying to measure directly CNT mass on real CNT bridge samples. Witness samples will therefore be used to estimate the CNT mass on the bridges. Moisture could affect seriously measurements with the microbalance and therefore special care should be taken with the CNT layers which are highly porous.

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61

Tab

le 2

: C

NT

thic

knes

s est

imat

ion

usin

g N

ikon

LV

150

optic

al m

icro

scop

e (w

ith D

ekta

k an

d SH

S ba

sed

Z-di

spla

cem

ent c

onve

rsio

n fa

ctor

s) a

nd S

EM

Sample name

Bridge identification #

Nikon Eclipse LV150 microscope Objective

Stage moving Up or Down

Z-stage Knob graduation - Focus on Si handle : 1st

Z-stage Knob graduation - Focus on Si handle : 2nd

Z-stage Knob graduation - Focus on Si handle : Average

Z-stage Knob graduation - Focus on TiN surface : 1st

Z-stage Knob graduation - Focus on TiN surface : 2nd

Z-stage Knob graduation - Focus on TiN surface : Average

Z-stage Knob graduation - Focus on CNT surface : 1st

Z-stage Knob graduation - Focus on CNT surface : 2nd

Z-stage Knob graduation - Focus on CNT surface :

Average Si Handle to TiN surface distance (grad) = Knob

Graduation Unit Si Handle to TiN surface distance (μm) - Dektak

measurement Conversion factor (μm/grad) - From Dektak measurement of

Si-TiN distance CNT thickness = TiN to CNT

surface distance (grad) = Knob Graduation Unit

CNT thickness (μm) - From Dektak-based conversion

factor CNT thickness (μm) - From

measured Veeco SHS standard conversion factor

CNT thickness (μm) - From SEM measurements

BA

TC

H

#3A

CT

Soi-1

3N

1 X

100

Dow

n 69

68

68

.5

66

65

65.5

62

61

61

.5

3 2.

205

0.73

5 4

2.94

0 1.

155

2.28

2

X

100

Up

68.5

68

.5

68.5

65

.5

66

65.7

5 62

63

62

.5

2.75

2.

205

0.80

2 3.

25

2.60

6 0.

864

2.28

2 C

TSo

i-14N

3

X10

0 D

own

88.5

87

87

.75

83

82

82.5

64

61

62

.5

5.25

5.

788

1.10

2 20

22

.050

5.

775

17.9

23

X10

0 U

p 87

88

.5

87.7

5 82

83

82

.5

61.5

64

62

.75

5.25

5.

788

1.10

2 19

.75

21.7

74

5.25

0 17

.923

B

AT

CH

#3

B

CT

Soi-1

3bN

2

X10

0 D

own

76

74.5

75

.25

72.5

71

71

.75

69.2

5 68

.75

69

3.5

3.10

3 0.

887

2.75

2.

438

0.79

4 0.

845

X10

0 U

p 76

77

76

.5

72

73.5

72

.75

69

71

70

3.75

3.

103

0.82

7 2.

75

2.27

6 0.

731

0.84

5 C

TSo

i-14b

N

1 X

100

Dow

n 89

.5

88.5

89

84

.5

83.5

84

81

.5

79.5

80

.5

5 5.

476

1.09

5 3.

5 3.

833

1.01

1 1.

266

X10

0 U

p 89

90

.5

89.7

5 83

84

.5

83.7

5 80

81

.5

80.7

5 6

5.47

6 0.

913

3 2.

738

0.79

8 1.

266

CT

Soi-1

4bN

2

X10

0 D

own

88.5

87

.5

88

83.5

82

.5

83

80.7

5 80

80

.375

5

4.04

9 0.

810

2.62

5 2.

126

0.75

8 1.

386

X10

0 U

p 86

87

.5

86.7

5 83

84

83

.5

81.5

82

.5

82

3.25

4.

049

1.24

6 1.

5 1.

869

0.39

9 1.

386

CT

Soi-1

4cN

1

X10

0 D

own

94

92

93

89

88

88.5

87

86

86

.5

4.5

4.07

6 0.

906

2 1.

812

0.57

8 1.

125

X10

0 U

p 93

94

.5

93.7

5 89

90

89

.5

86.5

87

.5

87

4.25

4.

076

0.95

9 2.

5 2.

398

0.66

5 1.

125

CT

Soi-1

4cN

2

X10

0 D

own

97

96

96.5

92

.5

91.5

92

90

89

.5

89.7

5 4.

5 4.

256

0.94

6 2.

25

2.12

8 0.

650

1.22

1

X

100

Up

96.5

97

.5

97

92

93.5

92

.75

89.5

90

.5

90

4.25

4.

256

1.00

1 2.

75

2.75

4 0.

731

1.22

1 C

TSo

i-14c

N

3 X

100

Dow

n 10

2.5

101.

5 10

2 98

.5

97.5

98

96

95

95

.5

4 3.

949

0.98

7 2.

5 2.

468

0.72

2 1.

291

X10

0 U

p 10

1.5

102.

5 10

2 98

99

98

.5

96

96.5

96

.25

3.5

3.94

9 1.

128

2.25

2.

539

0.59

8 1.

291

CT

Soi-1

5N

2 X

100

Dow

n 84

82

.5

83.2

5 77

.5

76.5

77

75

71

73

6.

25

6.91

6 1.

107

4 4.

426

1.15

5 0.

898

X10

0 U

p 83

.5

85

84.2

5 76

.5

77.5

77

72

75

73

.5

7.25

6.

916

0.95

4 3.

5 3.

339

0.93

0 0.

898

CT

Soi-1

9N

2 X

100

Dow

n 99

.5

98

98.7

5 97

.5

96.5

97

95

93

.5

94.2

5 1.

75

2.91

9 1.

668

2.75

4.

587

0.79

4 1.

583

X10

0 U

p 99

10

0 99

.5

96.5

97

.5

97

94

95

94.5

2.

5 2.

919

1.16

8 2.

5 2.

919

0.66

5 1.

583

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61

Tab

le 3

: C

hara

cter

istic

s of p

oten

tially

goo

d C

NT

bri

dge

sam

ples

Sample name

Bridge identification #

Si Handle to TiN surface distance (μm) - Dektak

TiN layer thickness (μm) - From Dektak

Buried Oxide -BOX- thickness (μm) - SOI wafer substrate Si bridge thickness (μm) - From Dektak estimation

Si bridge thickness (μm) - From SEM measurements

CNT thickness (μm) - From SEM measurements

CNT surface (μm x μm) - From LV150 estimation

CNT Volume (μm x μm x μm) - From LV150 and SEM TiN Resistance (k) /

Conductivity test across the bridge with 2 probes

Witness Samples Names (for density estimation)

Comments

BA

TC

H #

2

B

AT

CH

#2

CT

Soi-0

2N

2 7.

575

0.06 8

1 6.

507

7.82

9 0.

799

449

359

1 C

S145

N (C

NT

, N

i) V

ery

thin

and

low

den

sity

CN

T la

yer o

n a

lot t

hick

er S

i brid

ge. T

he b

ridge

can

ho

wev

er b

e us

ed fo

r the

rmal

/ele

ctric

al te

stin

g B

AT

CH

#3A

B

AT

CH

#3A

CT

Soi-1

3N

1 2.

205

0.11 9

1 1.

086

0.91

6 2.

282

297

678

0.55

5 C

S158

N (C

NT

, N

i) - S

160

(TiN

)

Effe

ctiv

e C

NT

surf

ace

mig

ht b

e sl

ight

ly sm

alle

r tha

n ca

lcul

ated

sinc

e so

me

CN

Ts

are

grow

n on

a sm

all N

i/Si a

rea

inst

ead

of th

e m

ain

Ni/T

iN/S

i are

a of

the

brid

ge

(due

to th

is p

roce

ss fl

ow) -

Goo

d br

idge

with

thin

Si a

nd th

icke

r CN

T la

yer.

CT

Soi-1

4N

3 5.

788

0.10 8

1 4.

68

5.03

2 17

.92

3 18

36

3290 6

20?

CS1

63N

(CN

T) -

S1

61N

(Ni,

TiN

) A

ligne

d C

NTs

on

how

ever

bro

ken

brid

ge

5.78

8

17

.92

3 12

02

2154 3

Tip

BA

TC

H #

3B

BA

TC

H #

3B

CT

Soi-1

3bN

2

3.10

3 0.

11 3 1

1.99

1.

810

0.84

5 52

8 44

6 0.

849

CS1

60N

(CN

T,

Ni,

TiN

)

Alth

ough

the

TiN

laye

r exh

ibits

a lo

w re

sist

ance

acr

oss t

he b

ridge

, its

con

tinui

ty

at o

ne e

nd o

f the

brid

ge se

ems f

ragi

le! T

he b

ridge

can

be

used

for

ther

mal

/ele

ctric

al p

re-te

stin

g

CT

Soi-1

4bN

1

5.47

6 0.

10 8 1

4.36

8 4.

660

1.26

6 30

5 38

6 0.

5 C

S160

N (C

NT

, N

i) - S

161

(TiN

) D

ense

CN

T la

yer b

ut th

inne

r tha

n th

e Si

brid

ge. S

ampl

e ca

n be

use

d fo

r th

erm

al/e

lect

rical

test

ing

CT

Soi-1

4bN

2

4.04

9 0.

10 8 1

2.94

1 2.

795

1.38

6 57

9 80

3 1.

174

CS1

60N

(CN

T,

Ni)

- S16

1 (T

iN)

This

Si b

ridge

touc

hes t

he h

andl

e on

1/

3 of

its l

engt

h. T

he C

NT/

Ni/T

iN is

so

met

imes

det

ache

d fr

om th

e Si

, for

min

g bu

mps

at f

ew lo

catio

ns o

n th

e br

idge

. Th

e br

idge

can

be

used

for t

herm

al/e

lect

rical

pre

-test

ing

CT

Soi-1

4cN

1

4.07

6 0.

10 8 1

2.96

8 3.

088

1.12

5 23

3 26

2 0.

42

CS1

62bN

(CN

T,

Ni)

- S16

1 (T

iN)

Den

se, n

onun

iform

CN

T la

yer b

ut th

inne

r tha

n th

e Si

brid

ge. S

ampl

e ca

n be

use

d fo

r the

rmal

/ele

ctric

al te

stin

g

CT

Soi-1

4cN

2

4.25

6 0.

10 8 1

3.14

8 3.

294

1.22

1 54

1 66

1 0.

585

CS1

62bN

(CN

T,

Ni)

- S16

1 (T

iN)

Den

se, n

onun

iform

CN

T la

yer b

ut th

inne

r tha

n th

e Si

brid

ge. S

ampl

e ca

n be

use

d fo

r the

rmal

/ele

ctric

al te

stin

g

CT

Soi-1

4cN

3

3.94

9 0.

10 8 1

2.84

1 2.

919

1.29

1 10

20

1316

0.

895

CS1

62bN

(CN

T,

Ni)

- S16

1 (T

iN)

This

Si b

ridge

touc

hes t

he h

andl

e on

1/

2 of

its l

engt

h. H

oles

in T

iN la

yer l

ead

to

nonu

nifo

rm C

NT

laye

r. Th

e br

idge

can

be

used

for t

herm

al/e

lect

rical

pre

-test

ing

CT

Soi-1

5N

2 6.

916

0.1

1 5.

816

6.73

1 0.

898

263

236

0.65

C

S162

bN (C

NT

, N

i, T

iN)

The

CN

T gr

ows i

n sp

arse

ly d

istri

bute

d sp

ots.

Alth

ough

the

TiN

laye

r exh

ibits

a

low

resi

stan

ce a

cros

s the

brid

ge, i

ts c

ontin

uity

at o

ne e

nd o

f the

brid

ge se

ems

frag

ile! T

he C

NT/

Ni/T

iN is

det

ache

d fr

om th

e Si

and

form

s a la

rge

bum

p at

one

en

d of

the

brid

ge. T

he b

ridge

can

be

used

for t

herm

al/e

lect

rical

pre

-test

ing

CT

Soi-1

9N

2 2.

919

0.1

1 1.

819

1.64

7 1.

583

560

886

0.34

3 C

S162

bN (C

NT

, N

i, T

iN)

This

Si b

ridge

touc

hes t

he h

andl

e on

1/

2 of

its l

engt

h. D

ense

CN

T la

yer a

lmos

t as

thic

k as

the

Si b

ridge

. The

brid

ge c

an b

e us

ed fo

r the

rmal

/ele

ctric

al p

re-te

stin

g

Plasmionique Inc.

/ 61

Bibliography [1] Matthew A. Panzer, Hai M. Duong, Jun Okawa, Junichiro Shiomi, Brian L. Wardle, Shigeo

Maruyama, and Kenneth E. Goodson. Temperature-Dependent Phonon Conduction and Nanotube Engagement in Metallized Single Wall Carbon Nanotube Films; Nano Lett. (2010), 10, 2395-2400

[2] Savas Berber, Young-Kyun Kwon, and David Tomanek. Unusually High Thermal Conductivity of Carbon Nanotubes; Phys. Rev. Lett. (2000), 84, 20, 4613-6

[3] J. Hone. Carbon Nanotubes: Thermal Properties; Dekker Encyclopedia of Nanoscience and Nanotechnology. Pages 603-610

Plas

mio

niqu

e In

c.

Page

10

/ 61

Ann

ex 1

: Sam

ples

cha

ract

eris

tics

and

follo

w-u

p ta

bles

(#10

) N

omen

clat

ure

for s

ampl

es in

the

follo

win

g ta

bles

: Si

-0X

:

Si su

bstra

te w

ith id

entif

icat

ion

num

ber 0

X (S

N0X

for

old

sam

ples

).

Soi-0

X :

SO

I (Si

licon

on

insu

lato

r sub

stra

te w

ith id

entif

icat

ion

num

ber 0

X).

A

LN

01 :

Bar

e A

l 2O3 s

ubst

rate

, num

ber 0

1.

Ti-0

X:

Si su

bstra

te w

ith T

i coa

ting,

num

ber 0

X.

Bol

o9T

i: Ti

coa

ting,

on

a sp

ecia

l sub

stra

te (B

olo9

is th

e na

me

of a

dev

ice

prot

otyp

e us

ed a

s sub

stra

te).

SX01

: Si

subs

trate

with

a th

erm

ally

gro

wn

oxid

e la

yer a

t 100

0 °C

in O

2, nu

mbe

r 01.

S0

12 :

Si

subs

trate

with

TiN

coa

ting,

num

ber 0

12.

TSo

i-02

: SO

I sub

stra

te w

ith T

iN c

oatin

g, n

umbe

r 02.

A

L07

: A

l 2O3 s

ubst

rate

with

TiN

coa

ting,

num

ber 0

7.

SiN

-0Y

:

Si3N

4 film

with

iden

tific

atio

n nu

mbe

r 0Y

dep

osite

d on

an

iden

tifie

d su

bstra

te.

SiO

-0Z

: Si

O2 f

ilm w

ith id

entif

icat

ion

num

ber 0

Z de

posi

ted

on a

n id

entif

ied

subs

trate

. V

O2-

XX

:

VO

x film

with

iden

tific

atio

n nu

mbe

r XX

dep

osite

d on

an

iden

tifie

d su

bstra

te.

YB

CO

-YY

: Y

-Ba-

Cu-

O fi

lm w

ith id

entif

icat

ion

num

ber Y

Y d

epos

ited

on a

n id

entif

ied

subs

trate

. B

olo5

-YB

CO

: Y-B

a-C

u-O

coa

ting,

on

a sp

ecia

l sub

stra

te (B

olo5

is th

e na

me

of a

dev

ice

prot

otyp

e us

ed a

s sub

stra

te).

SX18

N :

SX18

with

Ni c

oatin

g.

S100

N :

S100

with

Ni c

oatin

g.

SN11

N :

SN11

(Si s

ubst

rate

) with

Ni c

oatin

g, (u

sual

ly fo

r Ni c

alib

ratio

n).

AL

N02

N :

ALN

02 w

ith N

i coa

ting.

T

Soi-0

2N :

TSoi

-02

with

Ni c

oatin

g or

bei

ng p

atte

rned

(lith

ogra

phy)

prio

r to

the

Ni c

oatin

g fo

r lift

-off

. C

S100

N :

CN

T gr

own

on S

100N

C

AL

N28

N :

CN

T gr

own

on A

LN28

N.

Ti-1

8_pe

: Pl

asm

a et

chin

g of

sam

ple

Ti-1

8 us

ing

the

Plas

mio

niqu

e SP

T330

sput

ter.

Plas

mio

niqu

e In

c.

Page

11

/ 61

Ann

ex 1

A: S

putte

r dep

ositi

on w

ith th

e "C

VC N

ew-S

putte

r"

Sample name

Date

New-Sputter (NS) Plasmionique sputter (SPT)

Gun Number

Gun/Target diameter ('') Mode: DC or RF

(Contactor/Generator 1 or 2)

Target TargetSubstrate Distance

(cm)

Substrate (If in rotation)

Toggle Half-Angle (±X°)

Toggle Velocity

Base Pressure - Pfeiffer - Cold Cathode (Torr)

Base Pressure - Varian - Ion Gauge (Torr)

Real Temperature (°C)

Temperature Setpoint (°C)

Sputtering Power (W)

Reflected Power (W)

Presputtering Time (min)

Sputtering Time (min)

DC Bias in RF mode or Voltagein DC mode (V)

Current in DC mode (A)

N2 adjusted flow (sccm)

O2 flow (sccm)

Ar flow (sccm) Deposition Total Pressure - MKS - Baratron (mTorr)

Deposition Total Pressure - Varian - CDG (mTorr)

Deposition Total Pressure - Varian - ConvecTorr (mTorr)

Deposition Total Pressure - Pfeiffer - Pirani (mTorr) Thickness (nm) Dektak

Thickness (nm) Ellipsometry

Comments

TSo

i-13

bN

13/1

1/04

N

S 8

4 R

F- 1 N

i 10

TS

oi-

13b

45

3 2.

9E-

07

3.7E

-07

10

15

20

0 -7

38

0

0 10

5.

7313

10

6.

87

3h

10 p

umpi

ng

10

14

5 3.

5 -8

25

0

0 30

0.

761.

71.

62.

12

3.89

T

Soi-

14bN

NS

8 4

RF- 1

Ni

10

TSoi

-14

b 45

3

2.9E

-07

3.

7E-

07

101

5 20

0

-738

0 0

10

5.73

13

10

6.87

3h10

pum

ping

10

14

5 3.

5 -8

25

0

0 30

0.

761.

71.

62.

12

3.89

S160

N

N

S 8

4 R

F- 1 N

i 10

S1

60

45

3 2.

9E-

07

3.7E

-07

10

15

20

0 -7

38

0

0 10

5.

7313

10

6.

87

3h

10 p

umpi

ng

10

14

5 3.

5 -8

25

0

0 30

0.

761.

71.

62.

12

3.89

T

Soi-

14cN

13

/11/

05

NS

8 4

RF- 1

Ni

10

TSoi

-14

c 45

3

1.8E

-07

101

6 20

0

-737

0 0

10

5.74

13

10

6.9

Ove

rnig

ht

pum

ping

101

4 5

3.5

-831

0 0

30

0.75

1.7

1.6

2.08

3.

89

TSo

i-15

N

N

S 8

4 R

F- 1 N

i 10

TS

oi-

15

45

3 1.

8E-

07

10

16

20

0 -7

37

0

0 10

5.

7413

10

6.

9

O

vern

ight

pu

mpi

ng

10

14

5 3.

5 -8

31

0

0 30

0.

751.

71.

62.

08

3.89

T

Soi-

19N

NS

8 4

RF- 1

Ni

10

TSoi

-19

45

3

1.8E

-07

101

6 20

0

-737

0 0

10

5.74

13

10

6.9

Ove

rnig

ht

pum

ping

101

4 5

3.5

-831

0 0

30

0.75

1.7

1.6

2.08

3.

89

S162

bN

N

S 8

4 R

F- 1 N

i 10

S1

62'

45

3 1.

8E-

07

10

16

20

0 -7

37

0

0 10

5.

7413

10

6.

9

O

vern

ight

pu

mpi

ng

10

14

5 3.

5 -8

31

0

0 30

0.

751.

71.

62.

08

3.89

TiN

te

st

13/1

1/25

N

S 1

2 D

C-

1 T

iN

10

hold

er

10

3 3.

2E-

07

4.1E

-07

10

00

30

0 48

4

0. 2 0 6

48.3

0 0

1.19

2.6

3.8

2.21

120

1h

50 p

umpi

ng

Plas

mio

niqu

e In

c.

Page

12

/ 61

Sample name

Date

New-Sputter (NS) Plasmionique sputter (SPT)

Gun Number

Gun/Target diameter ('') Mode: DC or RF

(Contactor/Generator 1 or 2)

Target TargetSubstrate Distance

(cm)

Substrate (If in rotation)

Toggle Half-Angle (±X°)

Toggle Velocity

Base Pressure - Pfeiffer - Cold Cathode (Torr)

Base Pressure - Varian - Ion Gauge (Torr)

Real Temperature (°C)

Temperature Setpoint (°C)

Sputtering Power (W)

Reflected Power (W)

Presputtering Time (min)

Sputtering Time (min)

DC Bias in RF mode or Voltagein DC mode (V)

Current in DC mode (A)

N2 adjusted flow (sccm)

O2 flow (sccm)

Ar flow (sccm) Deposition Total Pressure - MKS - Baratron (mTorr)

Deposition Total Pressure - Varian - CDG (mTorr)

Deposition Total Pressure - Varian - ConvecTorr (mTorr)

Deposition Total Pressure - Pfeiffer - Pirani (mTorr) Thickness (nm) Dektak

Thickness (nm) Ellipsometry

Comments

TSo

i-30

to

TSo

i-39

13/1

1/27

N

S 1

2 D

C-

1 T

iN

10

Soi-3

010

3

2.3E

-07

3.

2E-

07

?

100

0 15

40

49

4

0. 2 0 1

48.3

0 0

1.18

2.6

3.8

2.31

100

4h00

pum

ping

; N

ew 4

'' SO

I su

bstra

te; D

HF

prec

lean

; For

sa

mpl

es T

Soi-

30 to

TSo

i-39.

H

eatin

g (5

00

deg

initi

ally

) lo

st a

t 20

min

du

e to

bad

ca

ble

conn

ectio

n.

Tem

pera

ture

do

wn

to 1

50

deg

at th

e en

d.

Not

to b

e us

ed

for d

evic

es

TSo

i-20

to

TSo

i-29

13/1

1/28

N

S 1

2 D

C-

1 T

iN

10

Soi-2

010

3

1.7E

-07

50

010

00

15

40

494

0. 2 0 1

48.3

0 0

1.17

2.5

3.7

2.28

100

Ove

rnig

ht

pum

ping

; New

4'

' SO

I su

bstra

te; D

HF

prec

lean

; For

sa

mpl

es T

Soi-

20 to

TSo

i-29.

H

eatin

g O

K.

Goo

d sa

mpl

e w

ith g

oldi

sh

colo

r. U

se fo

r de

vice

s as S

OI

Bat

ch#5

N

i C

lean

13

/12/

06

NS

8 4

RF- 1

Ni

10

Hol

der

45

3 7.

8E-

07

10

15

30

0 -7

35

0

0 10

5.

7413

10

6.

84

O

vern

ight

pu

mpi

ng

Plas

mio

niqu

e In

c.

Page

13

/ 61

Ann

ex 1

B: C

NT

grow

th w

ith th

e PE

CVD

sys

tem

Samples

Date

Base Pressure - Pfeiffer Gauge (Torr)

Distance: Substrate waves entrance window

()

Substrate

Substrate holder (PECVD)

MW Power (W)

Deposition Time (min) Deposition Temperature

(°C) Deposition Pressure

(mTorr)

Deposition Gas N2 (%)

Deposition Gas Ar (%)

Deposition Gas H2 (%)

Deposition Gas CH4 (%)

Deposition Gas C2H2 (%)

Thickness (nm)

Comments (Number in italic = estimation based on

previous measurements)

CTS

oi-

13bN

13

/11/

26

4.

0E-0

7 27

TS

oi-

13bN

B

N

90

020

700

6000

8020

CS1

60N

4.

0E-0

7 27

S1

60N

B

N

90

020

700

6000

8020

C

TSoi

-14

bN

4.0E

-07

27

TSoi

-14

bN

BN

900

2070

060

00

80

20

CTS

oi-

14cN

4.

0E-0

7 27

TS

oi-

14cN

B

N

90

020

700

6000

8020

CTS

oi-

15N

4.

0E-0

7 27

TS

oi-

15N

B

N

90

020

700

6000

8020

CTS

oi-

19N

4.

0E-0

7 27

TS

oi-

19N

B

N

90

020

700

6000

8020

CS1

62bN

4.

0E-0

7 27

S1

62bN

B

N

90

020

700

6000

8020

13

/12/

09

PE

CV

D :

Hea

ter

Pow

er su

pply

fusi

ble

burn

t and

cha

nged

for

tem

pora

ry fu

sibl

e. M

echa

nica

l pum

ps fu

sibl

e bu

rnt a

nd c

hang

ed

too.

Wat

er le

ak fr

om th

e cr

yopu

mp

com

pres

sor.

CTS

oi-

14N

14

/01/

28

2.

1E-0

7 27

TS

oi-

14N

B

N

90

030

700

6000

8020

16

700

Alig

ned

CN

Ts fr

om S

EM o

bser

vatio

n

Plas

mio

niqu

e In

c.

Page

14

/ 61

Ann

ex 1

C: S

putte

r dep

ositi

on w

ith th

e "P

lasm

ioni

que

SPT3

30"

syst

em

No

data

ava

ilabl

e fo

r thi

s per

iod.

Plas

mio

niqu

e In

c.

Page

15

/ 61

Ann

ex 1

D: L

ithog

raph

y pr

oces

ses

Sample name

Date

Dry/Dehydration bake : HotplateTemperature(°C)Resist, Primer / Adhesion Promoter, Polyimide, …

Spin Speed #1 (rpm)

Spin Speed #2 (rpm) Softbake : Hotplate Temperature (°C)

Softbake Time Duration (s) input power; CI1:constant

intensity I-line=365nm; CI2: CP Power (W) or CI Intensity

(mW/cm2)Exposure Time Duration (s)

Developer (Microposit MF-319 /321, NaOH, TMAH, …)

Bath Temperature (°C) - For MF-319,15-20°Cisbest

Immersion or Soak Time (s) Dektak measured step after

development (nm) Postbake : Hotplate or Oven

Temperature(°C)Short O2 Plasma De-scum

(cleans thin resist left by dev.) Dektak measured step after

Postbake (nm) Coating for Lift-off - Wet/Dry Etch of exposed target layer Dektak measured step after Etch(nm)+Target-Mask O2 Plasma Clean (Plasma/High

temperature treated PR) prior towetstrip Initial Strip: Acetone rinse +

IPA rinse before acetone dries + Blow dry (Yes/No)

Remover Clean #1 (Microposit 1165, …)

Bath Temperature (°C) -1165 at80°Cfor130-180°CbakesImmersion or Soak Time (s)


Bath Temperature (°C) -1165 at80°Cfor130-180°CbakesImmersion or Soak Time (s) Final solvent rinse (IPA, …); DI H2O rinse; N2 blow dry O2 Plasma Clean after wet

strip Dektak measured step after Stripping (nm) Target only

Comments

MA

SK

-2

13/1

0/29

A

ceto

ne

55

120 0

IP

A; N

2

New

Ph

otom

ask re

ceiv

ed

on 2

013-

10-1

8,

with

en

larg

ed

Si b

ridge

to

co

mpe

nsa

te fo

r un

derc

ut

due

to

isot

ropi

c pl

asm

a et

ch.

RR

D

vers

ion.

C

lean

ing.

MA

SK

-3

A

ceto

ne

50

120 0

IP

A; N

2

Idem

. R

RU

ve

rsio

n.

Cle

anin

g.

MA

SK

-1

A

ceto

ne

54

120 0

IP

A; N

2

Firs

t un

cent

ere

d m

ask.

R

RU

ve

rsio

n.

Cle

anin

g.

TSo

i-13

bN

20 0

HM

DS

90 0 40

0 0

1st

Neg

ativ

e to

ne P

R

Plas

mio

niqu

e In

c.

Page

16

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

60

ma-

D53

3S

R T

18 0

A

ceto

ne

R T

120 0

IP

A; N

2R

I E

Dou

ble

coat

. Bad

al

ignm

ent

. Stri

p +

rest

art

MA

SK

-2

A

ceto

ne

R T

600

IP

A; N

2

Ph

otom

ask C

lean

ing.

TSo

i-13

bN

13/1

0/30

20 0

HM

DS

90 0 40

0 0

2nd

Neg

ativ

e to

ne P

R

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

60

ma-

D53

3S

R T

18 0

A

ceto

ne

R T

300

IP

A; N

2R

I E

Dou

ble

coat

. Bad

al

ignm

ent

. Stri

p +

rest

art

TSo

i-13

bN

20 0

HM

DS

90 0 40

0 0

3rd

Neg

ativ

e to

ne P

R

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

50

ma-

D53

3S

R T

18 0

A

ceto

ne

R T

300

IP

A; N

2R

I E

Sing

le

coat

. Bad

al

ignm

ent

Plas

mio

niqu

e In

c.

Page

17

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

. Stri

p +

rest

art

TSo

i-13

bN

20 0

HM

DS

90 0 40

0 0

4th

Neg

ativ

e to

ne P

R

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

60

ma-

D53

3S

R T

18 0

Dou

ble

coat

. Fa

irly

good

al

ignm

ent

. Res

tart?

m

a-D

533

S

R T

18 0

CI 1

9 18 0

A

ceto

ne

R T

300

IP

A; N

2R

I E

TSo

i-13

bN

13/1

1/01

20 0

HM

DS

90 0 40

0 0

5th

Neg

ativ

e to

ne P

R

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

60

ma-

D53

3S

R T

18 0

Dou

ble

coat

. Q

uite

go

od

alig

nmen

t

Plas

mio

niqu

e In

c.

Page

18

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

.

m

a-D

533

S

R T

18 0

CI 1

9 18 0

10 0

13

/11/

04

RI E

C

V C

13

/11/

05

No

PG

70

36

0 0 A

ceto

ne

R T

30 0

IPA ; DI;

N2

dry

Wet

st

rips

13

/11/

06

RIE

PG

70

180 0

Ace

tone

R T

30 0

IPA ; DI;

N2

dry

RI E

RIE

+

Wet

+

RIE

st

rips

TSo

i-14

bN

13/1

0/31

20 0

HM

DS

90 0 40

0 0

1st

Neg

ativ

e to

ne P

R

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

60

ma-

D53

3S

R T

18 0

Dou

ble

coat

. G

ood

alig

nmen

t.

m

a-D

533

S

R T

18 0

Plas

mio

niqu

e In

c.

Page

19

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

13

/11/

01

CI 1

9 18 0

10 0

13

/11/

04

RI E

C

V C

13

/11/

05

No

PG

70

36

0 0 A

ceto

ne

R T

30 0

IPA ; DI;

N2

dry

Wet

st

rips

13

/11/

06

RIE

PG

70

180 0

Ace

tone

R T

30 0

IPA ; DI;

N2

dry

RI E

RIE

+

Wet

+

RIE

st

rips

TSo

i-14

cN

13/1

0/31

20 0

HM

DS

90 0 40

0 0

1st

Neg

ativ

e to

ne P

R

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

60

ma-

D53

3S

R T

18 0

Dou

ble

coat

. G

ood

alig

nmen

t.

m

a-D

533

S

R T

18 0

13

/11/

01

CI 1

9 18 0

10 0

13

/11/

04

RI E

Plas

mio

niqu

e In

c.

Page

20

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

13

/11/

05

CV C

N

o

PG

70

360 0

Ace

tone

R T

30 0

IPA ; DI;

N2

dry

Wet

st

rips

13

/11/

06

RIE

PG

70

180 0

Ace

tone

R T

30 0

IPA ; DI;

N2

dry

RI E

RIE

+

Wet

+

RIE

st

rips

TSo

i-15

N

13/1

1/01

20 0

HM

DS

90 0 40

0 0

1st

Neg

ativ

e to

ne P

R

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

60

ma-

D53

3S

R T

18 0

Dou

ble

coat

. G

ood

alig

nmen

t.

m

a-D

533

S

R T

18 0

CI 1

9 18 0

10 0

13

/11/

04

RI E

13

/11/

05

CV C

N

o

PG

70

360 0

Ace

tone

R T

30 0

IPA ; DI;

N2

dry

Wet

st

rips

Plas

mio

niqu

e In

c.

Page

21

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

13

/11/

06

RIE

PG

70

180 0

Ace

tone

R T

30 0

IPA ; DI;

N2

dry

RI E

RIE

+

Wet

+

RIE

st

rips

TSo

i-19

N

13/1

1/01

20 0

HM

DS

90 0 40

0 0

1st

Neg

ativ

e to

ne P

R

litho

for

Ni l

ift-

off.

m

a-N

141

0

50 0 30

0 0

m

a-N

141

0

50 0 30

0 0 16 0

12 0 C

I 1 9

60

ma-

D53

3S

R T

18 0

Dou

ble

coat

. G

ood

alig

nmen

t.

m

a-D

533

S

R T

18 0

CI 1

9 18 0

10 0

13

/11/

04

RI E

13

/11/

05

CV C

N

o

PG

70

360 0

Ace

tone

R T

30 0

IPA ; DI;

N2

dry

Wet

st

rips

13

/11/

06

RIE

PG

70

180 0

Ace

tone

R T

30 0

IPA ; DI;

N2

dry

RI E

RIE

+

Wet

+

RIE

st

rips

Plas

mio

niqu

e In

c.

Page

22

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

TSo

i-13

bN

13/1

1/07

20 0

S182 2

50 0 35

0 0 11 5

18 0 C

P19 6

20

MF-

319

R T

50

11 5

25

9 7

RIE

+ Wet

R

IE

11

65

70

600

D

I, N

2 N

o

Lith

o fo

r N

i/TiN

/Si

brid

ge

rele

ase

with

Si

and

SiO

2 et

ches

13

/11/

13

25

9 1

RIE

+ Wet

R

IE

11

65

70

600

D

I, N

2 N

o31

0 3

At b

ridge

#2

; ide

m

+ Si

etc

h (R

IE) +

Si

O2

etch

(B

HF)

26

0 5

RIE

+ Wet

R

IE

11

65

70

600

D

I, N

2 N

o

At b

ridge

#3

; ide

m

+ St

rip

(RIE

+

Wet

+

RIE

)

TSo

i-14

bN

13/1

1/07

20 0

S182 2

50 0 35

0 0 11 5

18 0 C

P19 6

20

MF-

319

R T

50

A

ceto

ne

IPA ; DI;

N2

dry

Lith

o fo

r N

i/TiN

/Si

brid

ge

rele

ase

with

Si

and

SiO

2 et

ches

TSo

i-14

bN

20 0

S182 2

50 0 35

0 0 11 5

18 0 C

P19 5

21

MF-

319

R T

50

A

ceto

ne

IPA ; DI;

N2

dry

2nd

litho

be

caus

e 1s

t lith

o w

as b

ad

TSo

i-14

bN

13/1

1/08

20 0

S182 2

50 0 35

0 0 11 5

18 0 C

P19 6

20

MF-

319

R T

50

11 5

28

6 3

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

547 6

3rd

litho

be

caus

e 2n

d lit

ho

was

bad

Plas

mio

niqu

e In

c.

Page

23

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

13

/11/

13

28

3 7

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

404 9

At b

ridge

#2

; ide

m

+ Si

etc

h (R

IE) +

Si

O2

etch

(B

HF)

13

/11/

25

27

1 1

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

At b

ridge

#3

; ide

m

+ St

rip

(RIE

+

Wet

+

RIE

)

TSo

i-14

cN

13/1

1/08

20 0

S182 2

50 0 35

0 0 11 5

18 0 C

P19 6

20

MF-

319

R T

50

11 5

25

7 8

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

407 6

Lith

o fo

r N

i/TiN

/Si

brid

ge

rele

ase

with

Si

and

SiO

2 et

ches

13

/11/

13

25

9 3

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

425 6

At b

ridge

#2

; ide

m

+ Si

etc

h (R

IE) +

Si

O2

etch

(B

HF)

13

/11/

25

26

2 8

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

394 9

At b

ridge

#3

; ide

m

+ St

rip

(RIE

+

Wet

+

RIE

)

TSo

i-15

N

13/1

1/08

20 0

S182 2

50 0 35

0 0 11 5

18 0 C

P19 6

20

MF-

319

R T

50

11 5

25

8 5

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

Lith

o fo

r N

i/TiN

/Si

brid

ge

rele

ase

with

Si

and

SiO

2

Plas

mio

niqu

e In

c.

Page

24

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

etch

es

13

/11/

13

25

8 7

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

691 6

At b

ridge

#2

; ide

m

+ Si

etc

h (R

IE) +

Si

O2

etch

(B

HF)

13

/11/

25

26

1 0

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

At b

ridge

#3

; ide

m

+ St

rip

(RIE

+

Wet

+

RIE

)

TSo

i-19

N

13/1

1/08

20 0

S182 2

50 0 35

0 0 11 5

18 0 C

P19 6

20

MF-

319

R T

50

11 5

25

9 8

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

Lith

o fo

r N

i/TiN

/Si

brid

ge

rele

ase

with

Si

and

SiO

2 et

ches

13

/11/

13

26

0 2

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

291 9

At b

ridge

#2

; ide

m

+ Si

etc

h (R

IE) +

Si

O2

etch

(B

HF)

13

/11/

25

25

9 7

RIE

+ Wet

R

IE

11

65

70

600

IPA ; DI;

N2

dry

RI E

At b

ridge

#3

; ide

m

+ St

rip

(RIE

+

Wet

+

RIE

)

MA

SK

-2

A

ceto

ne

R T

600

IP

A; N

2

Ph

otom

ask C

lean

ing.

Plas

mio

niqu

e In

c.

Page

25

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

TSo

i-11

13

/12/

02

20 0 S1

81 3 50 0

400 0

11 5 18 0

CP

19 6 12

. 5 M

F-31

9 R T

50

13

0 1 11 5

RIE

R

IE

11

65

70

600

B

ak e R

I E

SOI

Bat

ch

#4A

. Li

tho

for

TiN

etc

h on

al

read

y pa

ttern

ed

Si

Brid

ges

13

/12/

03

130 8

R

IE

RIE

1165

70

60

0

Bak e

RI E

A

t brid

ge

#2; i

dem

13

/12/

04

130 5

R

IE

11

65

70

600

B

ak e R

I E

At b

ridge

#3

; ide

m

TSo

i-11

b 13

/12/

02

20 0 S1

81 3 50 0

400 0

11 5 18 0

CP

19 6 12

. 5 M

F-31

9 R T

50

13

0 1 11 5

RIE

R

IE

11

65

70

600

B

ak e R

I E

SOI

Bat

ch

#4A

. Li

tho

for

TiN

etc

h on

al

read

y pa

ttern

ed

Si

Brid

ges

13

/12/

03

130 8

R

IE

RIE

1165

70

60

0

Bak e

RI E

A

t brid

ge

#2; i

dem

13

/12/

04

130 5

R

IE

11

65

70

600

B

ak e R

I E

At b

ridge

#3

; ide

m

TSo

i-12

13

/12/

02

20 0 S1

81 3 50 0

400 0

11 5 18 0

CP

19 6 12

. 5 M

F-31

9 R T

50

13

0 1 11 5

RIE

R

IE

11

65

70

600

B

ak e R

I E

SOI

Bat

ch

#4A

. Li

tho

for

TiN

etc

h on

al

read

y pa

ttern

ed

Si

Plas

mio

niqu

e In

c.

Page

26

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

Brid

ges

13

/12/

03

130 8

R

IE

RIE

1165

70

60

0

Bak e

RI E

At b

ridge

#2

; ide

m.

The

only

vi

able

br

idge

#2

is b

roke

n,

prob

ably

du

e to

st

ictio

n fo

rces

w

ith th

e ha

ndle

du

ring

the

wet

st

rip

13

/12/

04

130 5

R

IE

11

65

70

600

B

ak e R

I E

At b

ridge

#3

; ide

m

MA

SK

-2

A

ceto

ne

R T

600

IP

A; N

2

Ph

otom

ask C

lean

ing.

TSo

i-12

b 13

/12/

03

20 0 S1

81 3 50 0

400 0

11 5 18 0

CP

19 6 12

. 5 M

F-31

9 R T

50

13

0 1 11 5

RIE

R

IE

11

65

70

600

B

ak e R

I E

SOI

Bat

ch

#4A

. Li

tho

for

TiN

etc

h on

al

read

y pa

ttern

ed

Si

Brid

ges

13

/12/

03

130 8

R

IE

RIE

1165

70

60

0

Bak e

RI E

A

t brid

ge

#2; i

dem

13

/12/

04

130 5

R

IE

11

65

70

600

B

ak e R

I E

At b

ridge

#3

; ide

m

Plas

mio

niqu

e In

c.

Page

27

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

TSo

i-18

13

/12/

03

20 0 S1

81 3 50 0

400 0

11 5 18 0

CP

19 6 12

. 5 M

F-31

9 R T

50

13

0 1 11 5

RIE

R

IE

11

65

70

600

B

ak e R

I E

SOI

Bat

ch

#4A

. Li

tho

for

TiN

etc

h on

al

read

y pa

ttern

ed

Si

Brid

ges

13

/12/

03

130 8

R

IE

RIE

1165

70

60

0

Bak e

RI E

A

t brid

ge

#2; i

dem

13

/12/

04

130 5

R

IE

11

65

70

600

B

ak e R

I E

At b

ridge

#3

; ide

m

TSo

i-14

N

13/1

2/06

M

W -6x

11

65

70

600

Ace

tone

R T

30 0

IPA ; DI;

N2

dry;

ba

k e

Mic

row

ave

pl

asm

a st

rip: 6

ru

ns o

f 20

min

ea

ch. N

o ef

fect

ob

serv

ed.

1165

st

rip h

as

no e

ffec

t. Sc

rubb

ing

in

acet

one

lead

s to

the

colla

pse

of th

e 2

viab

le

brid

ges

#1 a

nd

#2. E

nd

Plas

mio

niqu

e In

c.

Page

28

/ 61

Sample name

Date


Spin Speed #1 (rpm)



















Comments

of

sam

ple?

C

NT

grow

th

perf

orm

ed

anyw

ay

lead

s to

Alig

ned

CN

T on

th

e br

oken

B

ridge

#3

!!!

Plas

mio

niqu

e In

c.

Page

29

/ 61

Ann

ex 1

E: W

et e

tchi

ng/c

lean

ing

proc

esse

s

Sample or Recipe name

Date

Etch/Clean Step/iteration #

Target layer material to etch or clean

Masking layer material for etch: Resist, metal, oxide, …

Wet Etchant/Cleaning Mixture usual name

Wet Mixture Component #1

Wet Mixture Component #2 Wet Mixture Component ratio

#1:#2:#3 Mixture Temperature (°C) Agitation : Stirring Speed

(rpm) - M for Manual Etch/Clean Time Duration (s)

DI H2O Rinse (DI): 2min ; Nitrogen blow dry (N2)

Post-Etch Bake Temperature (°C) - re-increase adhesion

Post-Etch Bake Time Duration (s)

Dektak measured step #1 post-etch (nm) +Target-Mask



Comments

TSo

i-13

bN

13/1

1/18

0

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

6:1

RT

200

0 D

I; N

2

31

7037

8534

15

Step

mea

sure

d af

ter S

i etc

h

1 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

030

0D

I; N

2 11

560

Vis

ual i

nspe

ctio

n

2 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

030

0D

I; N

2 11

560

3 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

4 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

5 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

6 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

idem

; Han

dle

Si v

isib

le a

nd c

lean

in th

e tre

nche

s aro

und

all b

ridge

s.

7 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

8 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

060

0D

I; N

2 11

560

9 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

030

0D

I; N

2 11

560

10

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

W

itnes

s Brid

ges #

3 re

leas

ed

13

/11/

19

11

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

12

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

13

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

14

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

15

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

Plas

mio

niqu

e In

c.

Page

30

/ 61


Date















Comments

16

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

17

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

18

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

19

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

60

20

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

420

DI;

N2

115

120

21

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

420

DI;

N2

115

120

W

itnes

s Brid

ges #

1 re

leas

ed

13

/11/

20

22

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

23

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

24

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

458

482

318

Witn

ess B

ridge

s #2

rele

ased

- En

d of

etc

h? T

o be

con

firm

ed w

ith d

ekta

k m

easu

rem

ents

acr

oss t

he b

ridge

s

13

/11/

22

25

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

26

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

372

434

27

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

28

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

29

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

340

DI;

N2

115

120

30

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

340

DI;

N2

115

120

346

346

180

TSo

i-14

bN

13/1

1/18

0

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

6:1

RT

200

0 D

I; N

2

56

0944

9620

57

Step

mea

sure

d af

ter S

i etc

h

1 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

030

0D

I; N

2 11

560

Vis

ual i

nspe

ctio

n

2 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

030

0D

I; N

2 11

560

Plas

mio

niqu

e In

c.

Page

31

/ 61


Date















Comments

3 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

4 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

Brid

ge #

3 w

ashe

d ou

t. N

orm

al si

nce

ther

e w

as n

o Si

und

erne

ath

5 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

6 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

Han

dle

Si v

isib

le a

nd c

lean

in th

e tre

nche

s aro

und

all b

ridge

s.

7 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

8 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

054

0D

I; N

2 11

560

9 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

030

0D

I; N

2 11

560

10

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

13

/11/

19

11

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

12

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

13

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

14

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

15

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

16

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

600

DI;

N2

115

120

W

itnes

s Brid

ges #

2 re

leas

ed

17

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

18

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

60

19

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

60

20

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

420

DI;

N2

115

120

Plas

mio

niqu

e In

c.

Page

32

/ 61


Date















Comments

21

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

420

DI;

N2

115

120

445

19

NA

W

itnes

s Brid

ges #

1 an

d #2

rele

ased

- En

d of

etc

h? T

o be

con

firm

ed w

ith

dekt

ak m

easu

rem

ents

acr

oss t

he b

ridge

s

13

/11/

22

22

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

23

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

382

24

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

25

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

26

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

340

DI;

N2

115

120

27

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

340

DI;

N2

115

120

381

28

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

348

26

NA

TSo

i-14

cN

13/1

1/20

0

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

6:1

RT

200

0 D

I; N

2

43

8045

9244

32

Step

mea

sure

d af

ter S

i etc

h

1 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

030

0D

I; N

2 11

560

Vis

ual i

nspe

ctio

n

2 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

3 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

Dek

tak

mea

sure

men

ts a

cros

s the

brid

ges d

eter

iora

te th

e ed

ges o

f the

PR

pr

otec

ting

them

. Per

form

mea

sure

men

ts o

nly

whe

n re

quire

d

4 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

Han

dle

Si v

isib

le a

nd c

lean

in th

e tre

nche

s aro

und

all b

ridge

s.

5 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

030

0D

I; N

2 11

512

0

6 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

036

0D

I; N

2 11

512

0

7 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

036

0D

I; N

2 11

512

0

8 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

030

0D

I; N

2 11

512

0

Plas

mio

niqu

e In

c.

Page

33

/ 61


Date















Comments

9 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

030

0D

I; N

2 11

512

0

10

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

11

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

12

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

13

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

13

/11/

21

14

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

15

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

16

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

17

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

18

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

19

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

20

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

21

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

22

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

W

itnes

s Brid

ges #

3 re

leas

ed

23

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

499

51

3 W

itnes

s Brid

ges #

1 an

d #2

rele

ased

- En

d of

etc

h? T

o be

con

firm

ed w

ith

dekt

ak m

easu

rem

ents

acr

oss t

he b

ridge

s

13

/11/

22

24

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

25

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

26

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

Plas

mio

niqu

e In

c.

Page

34

/ 61


Date















Comments

27

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

28

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

29

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

370

DI;

N2

115

120

30

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

370

DI;

N2

115

120

31

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

420

DI;

N2

115

120

32

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

480

DI;

N2

115

120

33

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

500

DI;

N2

115

120

302

320

55

TSo

i-15

N

13/1

1/20

0

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

6:1

RT

200

0 D

I; N

2

36

4768

9759

97

Step

mea

sure

d af

ter S

i etc

h

1 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

030

0D

I; N

2 11

560

Vis

ual i

nspe

ctio

n. N

o B

ridge

#3

(sam

ple

brok

en p

revi

ousl

y)

2 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

512

0

3 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

Dek

tak

mea

sure

men

ts a

cros

s the

brid

ges d

eter

iora

te th

e ed

ges o

f the

PR

pr

otec

ting

them

. Per

form

mea

sure

men

ts o

nly

whe

n re

quire

d

4 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

5 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

6 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

7 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

8 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

Han

dle

Si v

isib

le a

nd c

lean

in th

e tre

nche

s aro

und

all b

ridge

s.

9 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

030

0D

I; N

2 11

512

0

Plas

mio

niqu

e In

c.

Page

35

/ 61


Date















Comments

10

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

11

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

PR

star

ts p

eelin

g of

f at T

iN e

lect

rode

s bor

ders

!

12

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

13

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

14

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

15

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

16

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

17

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

13

/11/

21

18

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

19

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

W

itnes

s Brid

ges #

1 re

leas

ed

20

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

21

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

22

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

23

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

24

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

25

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

26

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

27

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

Plas

mio

niqu

e In

c.

Page

36

/ 61


Date















Comments

28

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

29

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

W

itnes

s Brid

ges #

3 re

leas

ed

30

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

31

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

352

453

394

Witn

ess B

ridge

s #2

rele

ased

- En

d of

etc

h? T

o be

con

firm

ed w

ith d

ekta

k m

easu

rem

ents

acr

oss t

he b

ridge

s

13

/11/

22

32

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

33

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

34

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

35

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

36

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

37

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

38

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

39

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

40

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

214

209

220

TSo

i-19

N

13/1

1/20

0

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

6:1

RT

200

0 D

I; N

2

24

9236

9331

70

Step

mea

sure

d af

ter S

i etc

h

1 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

030

0D

I; N

2 11

560

Vis

ual i

nspe

ctio

n

2 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

060

0D

I; N

2 11

560

3 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

4 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

Plas

mio

niqu

e In

c.

Page

37

/ 61


Date















Comments

5 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

6 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F6:

1R

T20

048

0D

I; N

2 11

512

0

Han

dle

Si v

isib

le a

nd c

lean

in th

e tre

nche

s aro

und

all b

ridge

s.

7 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

030

0D

I; N

2 11

512

0

8 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

036

0D

I; N

2 11

512

0

9 Si

O2

S182

2 B

OE

, B

HF

NH

4FH

F3:

1R

T20

030

0D

I; N

2 11

512

0

Witn

ess B

ridge

s #1

rele

ased

but

its T

iN se

ems d

eter

iora

ted

10

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

11

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

12

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

13

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

14

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

15

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

13

/11/

21

16

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

17

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

18

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

19

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

20

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

21

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

22

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

Plas

mio

niqu

e In

c.

Page

38

/ 61


Date















Comments

23

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

24

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

300

DI;

N2

115

120

25

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

26

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

27

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

330

DI;

N2

115

120

28

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

29

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

30

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

31

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

32

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

40

9

Witn

ess B

ridge

s #2

rele

ased

- En

d of

etc

h? T

o be

con

firm

ed w

ith d

ekta

k m

easu

rem

ents

acr

oss t

he b

ridge

s

13

/11/

22

33

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

34

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

35

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

36

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

37

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

360

DI;

N2

115

120

38

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

370

DI;

N2

115

120

39

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

390

DI;

N2

115

120

40

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

420

DI;

N2

115

120

Plas

mio

niqu

e In

c.

Page

39

/ 61


Date















Comments

41

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

480

DI;

N2

115

120

42

SiO

2 S1

822

BO

E,

BH

F N

H4F

HF

3:1

RT

200

480

DI;

N2

115

120

NA

22

5 N

A

Plas

mio

niqu

e In

c.

Page

40

/ 61

Ann

ex 1

F: P

lasm

a et

chin

g/cl

eani

ng w

ith T

egal

T90

1e R

IE s

yste

m


Date

Targeted layer for etching

Masking layer material - Resist, metal, … Recipe Number

B:Pumpdown; C:Plasma-SensorEnd;D:Plasma-Timer; Pumpdown Pressure - MKS -

Baratron127A(mTorr) Working Pressure Setpoint - MKSBaratron127A(mTorr) Measured Working Pressure - MKSBaratron127A(mTorr)

fwd. CW RF Power (W)

avg. RF Power (W) Reflected RF Power (W) -

ACG-10DC Self-Bias Voltage (V) Endpoint measured level duringetch(DIV)max Upper Electrode Temperature

(°C) Lower Electrode Temperature (°C) Clean Channel (on, off) - O2

throughmeteringvalve CHF3 = Freon23 flow (sccm) - MFC#1 O2 adjusted flow (sccm) -

50sccm C2F6 - MFC#2 SF6 flow (sccm) - MFC#3

He flow (sccm) - MFC#4

Timer (s) Input (Photodiode: A, B, B/A,

A/B; Bias DC+, DC-) itd Gain (1, 1.5, 2, 3.5, 5, 7.5, 10,

15)oftheInput Normalize (DIV) - Level 0-10 representsPlasmaIntensity Normalize (s) - Time 1-60k to normalizePlasmaIntensity

Limiting (None, Low, High) - Ignored Plasma Int. changes Cell A (μA) - Current level of

Photocell A (0.0032-1)

Cell B (μA) - Current level of Photocell B (0.0032-1)

Purge Pumpdown threshold Pressure(mTorr)0-5k Number of Purges (1-9) - with

N2for2sVent Time (s)

Etch iteration # Dektak measured height at step

#1 (nm) +Target -Mask Dektak measured height at step


#3 (nm) +Target -Mask

Comments

Si-

subs

trat

e

13/1

0/30

Si

no

n e 14

B

, D

, 50

22 5

26 6 0

0

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

0

Test

s pr

ior t

o Pl

asm

a C

lean

of

TSoi

-13

bN

D

, E

, F

22 5 26 6

5050

533. 5

4. 9 17

17O

f f

31. 2

300

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

id

em

TSo

i-13

bN

D,

E, F

22 5

22 5 50

5052

- 10 2

1. 9 19

19O

f f

31. 2

120 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Cle

an o

f TS

oi-

13bN

af

ter 1

st

bad

litho

fo

r Ni

lift-o

ff

TSo

i-13

bN

D,

E, F

22 5

22 5 50

5052

3. 5 2. 3

1818

Of f

31

. 2

12

0 0 B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Cle

an o

f TS

oi-

13bN

af

ter 2

nd

bad

litho

fo

r Ni

lift-o

ff

TSo

i-13

bN

D,

E, F

22 5

22 5 50

5053

- 941. 8

1817

Of f

31

. 2

12

0 0 B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Cle

an o

f TS

oi-

13bN

af

ter 3

rd

bad

litho

fo

r Ni

lift-o

ff

Plas

mio

niqu

e In

c.

Page

41

/ 61


Date
























Comments

Si-

subs

trat

e

13/1

1/01

Si

no

n e 14

B

, D

, 50

22 5

0

0

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

0

Test

s pr

ior t

o Pl

asm

a C

lean

of

TSoi

-13

bN

D

, E

, F

22 5 24 4

5050

54- 10 9

1. 5 18

18O

f f

31. 2

300

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

id

em

TSo

i-13

bN

D,

E, F

22 5

22 5 50

5048

- 10 9

1. 4 20

19O

f f

31. 2

120 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Cle

an o

f TS

oi-

13bN

af

ter 4

th

bad

litho

fo

r Ni

lift-o

ff

Si-

subs

trat

e

13/1

1/04

Si

no

n e 14

B

, D

, 50

22 5

0

0

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

0

Test

s pr

ior t

o Pl

asm

a C

lean

of

TSoi

-13

bN

D

, E

, F

22 5 24 8

5050

50- 10 6

2. 4 17

16O

f f

31. 2

120 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

id

em

TSo

i-13

bN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 7 50

5048

- 3. 8

1. 3 20

19O

f f

31. 2

30

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

desc

um

prio

r to

Ni

coat

ing

TSo

i-14

bN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5048

3. 5 1. 3

1818

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

desc

um

prio

r to

Ni

coat

ing

Plas

mio

niqu

e In

c.

Page

42

/ 61


Date
























Comments

TSo

i-14

cN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5048

3. 5 1. 3

1818

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

desc

um

prio

r to

Ni

coat

ing

TSo

i-15

N

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5048

- 10 6

1. 3 18

19O

f f

31. 2

30

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

desc

um

prio

r to

Ni

coat

ing

TSo

i-19

bN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5048

- 10 6

1. 3 18

19O

f f

31. 2

30

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

desc

um

prio

r to

Ni

coat

ing

Si-

subs

trat

e

13/1

1/06

Si

no

n e 14

B

, D

, 50

22 5

0

0

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

0

Test

s pr

ior t

o Pl

asm

a St

rip o

f Sa

mpl

e ba

tch

3B

D

, E

, F

22 5 22 5

5050

52- 3. 8

1. 6 18

18O

f f

31. 2

600

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

id

em

TSo

i-13

bN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 4 18

18O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Strip

afte

r 1s

t Wet

St

rips

TSo

i-14

bN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 4 18

18O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Strip

afte

r 1s

t Wet

St

rips

TSo

i-14

cN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 4 18

18O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Strip

afte

r 1s

t Wet

St

rips

Plas

mio

niqu

e In

c.

Page

43

/ 61


Date
























Comments

TSo

i-15

N

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 4 18

18O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Strip

afte

r 1s

t Wet

St

rips

TSo

i-19

N

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 4 18

18O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

Strip

afte

r 1s

t Wet

St

rips

TSo

i-13

bN

13/1

1/06

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 3 18

19O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

202

Plas

ma

Strip

afte

r 2n

d W

et

Strip

s

TSo

i-14

bN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 3 18

19O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

202

Plas

ma

Strip

afte

r 2n

d W

et

Strip

s

TSo

i-14

cN

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 3 18

19O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

202

Plas

ma

Strip

afte

r 2n

d W

et

Strip

s

TSo

i-15

N

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 3 18

19O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

202

Plas

ma

Strip

afte

r 2n

d W

et

Strip

s

TSo

i-19

N

ma- N

141 0

ma- N

141 0

14

D,

E, F

22 5

22 5 50

5053

- 12 5

1. 3 18

19O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

202

Plas

ma

Strip

afte

r 2n

d W

et

Strip

s Si

-su

bstr

ate

13/1

1/15

Si

no

n e 13

B

, D

50

40 0

0 0

O

f f 7

12

10 0 30

B

/ A

1 3

10N

o ne

0.00 32

0.

00 32

0

Te

sts

prio

r to

Si e

tch

D

, E

, F

40 0 40 0

15 0 15 0

15 6

- 20 4

3. 1 18

17O

f f 7

12

10 0 30

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

1

D

, E

, F

40 0 40 0

15 0 15 0

15 6

- 14 9

3. 1 18

19O

f f 7

12

10 0 30

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

2

Plas

mio

niqu

e In

c.

Page

44

/ 61


Date
























Comments

TSo

i-13

bN

13/1

1/15

Si

S1

822

13

B

, D

50

40 0

0 0

O

f f 7

12

10 0 30

B

/ A

1 3

10N

o ne

0.00 32

0.

00 32

0

259 7

259 1

260 5

Dek

tak

mea

sure

men

t pr

ior t

o Si

etc

h

D

, E

, F

40 0 40 0

15 0 15 0

14 8 3. 5

3. 1 19

19O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

1 36

3 3 35

6 7 38

7 7

D

, E

, F

40 0 40 0

15 0 15 0

15 6

- 3. 8

3. 4 19

19O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

2 31

7 0 37

8 5 34

1 5

TSo

i-14

bN

13/1

1/15

Si

S1

822

13

B

, D

50

40 0

0 0

O

f f 7

12

10 0 30

B

/ A

1 3

10N

o ne

0.00 32

0.

00 32

0

286 3

283 7

271 1

Dek

tak

mea

sure

men

t pr

ior t

o Si

etc

h

D

, E

, F

40 0 40 0

15 0 15 0

14 8 3. 5

3. 1 19

19O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

1

D

, E

, F

40 0 40 0

15 0 15 0

15 6 3. 5

3. 1 18

17O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

2 58

7 2 47

8 9 22

8 2

D

, E

, F

40 0 40 0

15 0 15 0

14 9

- 19 5

3. 2 18

18O

f f 7

12

10 0 18

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

3 56

0 9 44

9 6 20

5 7

TSo

i-14

cN

13/1

1/15

Si

S1

822

13

B

, D

50

40 0

0 0

O

f f 7

12

10 0 30

B

/ A

1 3

10N

o ne

0.00 32

0.

00 32

0

257 8

259 3

262 8

Dek

tak

mea

sure

men

t pr

ior t

o Si

etc

h

D

, E

, F

40 0 40 0

15 0 15 0

14 8 3. 5

3. 1 19

19O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

1

D

, E

, F

40 0 40 0

15 0 15 0

15 6 3. 5

3. 1 18

17O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

2 45

7 7 47

9 1 45

4 4

Plas

mio

niqu

e In

c.

Page

45

/ 61


Date
























Comments

D

, E

, F

40 0 40 0

15 0 15 0

14 9

- 19 5

3. 2 18

18O

f f 7

12

10 0 18

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

3 43

8 0 45

9 2 44

3 2

TSo

i-15

N

13/1

1/15

Si

S1

822

13

B

, D

50

40 0

0 0

O

f f 7

12

10 0 30

B

/ A

1 3

10N

o ne

0.00 32

0.

00 32

0

258 5

258 7

261 0

Dek

tak

mea

sure

men

t pr

ior t

o Si

etc

h

D

, E

, F

40 0 40 0

15 0 15 0

14 8 3. 5

3. 1 19

19O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

1

D

, E

, F

40 0 40 0

15 0 15 0

15 6 3. 5

3. 1 18

17O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

2

D

, E

, F

40 0 40 0

15 0 15 0

15 6

- 3. 8

3. 1 19

19O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

3 39

9 2 60

7 3 60

7 1

D

, E

, F

40 0 40 0

15 0 15 0

15 6

- 3. 8

3. 4 19

19O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

4 36

2 8 70

0 6 62

3 3

D

, E

, F

40 0 40 0

15 0 15 0

14 9

- 3. 8

3. 1 18

17O

f f 7

12

10 0 60

B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

5 36

4 7 68

9 7 59

9 7

TSo

i-19

N

13/1

1/15

Si

S1

822

13

B

, D

50

40 0

0 0

O

f f 7

12

10 0 30

B

/ A

1 3

10N

o ne

0.00 32

0.

00 32

0

259 8

260 2

259 7

Dek

tak

mea

sure

men

t pr

ior t

o Si

etc

h

D

, E

, F

40 0 40 0

15 0 15 0

14 8 3. 5

3. 1 19

19O

f f 7

12

10 0 24

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

1 25

3 3 38

5 3 36

3 3

D

, E

, F

40 0 40 0

15 0 15 0

14 9

- 19 5

3. 2 18

18O

f f 7

12

10 0 18

0B

/ A

1 3

20Lo w

0.

00 32

0.00 32

50

3 20

2 24

9 2 36

9 3 31

7 0

Si-

subs

trat

e

13/1

1/25

Si

N

on e 14

B

, D

, 50

22 5

0

0

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

0

Te

sts

prio

r to

Plas

ma

Plas

mio

niqu

e In

c.

Page

46

/ 61


Date
























Comments

Strip

of

TSoi

-13

bN,

TSoi

-14

bN,

TSoi

-14

cN,

TSoi

-15

N,a

nd

TSoi

-19N

D

, E

, F

22 5 22 5

5050

52- 12 1

2. 1 20

19O

f f

31. 2

300

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

S160

N;

S162

bN

D,

E, F

22 5

22 5 50

5053

- 12 1

1. 9 18

19O

f f

31. 2

300

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Plas

ma

clea

n pr

ior t

o C

NT

grow

th

for t

hese

w

itnes

s sa

mpl

es

TSo

i-13

bN;

TSo

i-14

bN;

TSo

i-14

cN;

TSo

i-15

N;

TSo

i-19

N

S1

822

N

on e 14

B

, D

, 50

22 5

22 5 0

0

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

0

Plas

ma

Strip

be

fore

W

et S

trip

and

CN

T G

row

th

D

, E

, F

22 5 22 5

5050

53- 12 1

1. 8 20

19O

f f

31. 2

180 0

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

Si-

subs

trat

e

13/1

1/26

Si

N

on e 14

B

, D

, 50

22 5

0

0

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

0

Te

sts

Plas

mio

niqu

e In

c.

Page

47

/ 61


Date
























Comments

D

, E

, F

22 5 24 8

5050

533. 5

2 18

18O

f f

31. 2

300

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

TSo

i-13

bN;

TSo

i-14

bN;

TSo

i-14

cN;

TSo

i-15

N;

TSo

i-19

N

S1

822

N

on e 14

B

, D

, 50

22 5

22 5 0

0

Of f

31

. 2

30

B

/ A

1 5

10N

o ne

0.00 32

0.

00 32

0

Last

Pl

asm

a St

rip

befo

re

CN

T G

row

th

D

, E

, F

22 5 22 5

5050

52- 12 2

1. 7 20

19O

f f

31. 2

600

B/ A

1 5

10N

o ne

0.00 32

0.

00 32

503

201

TSo

i-11

13

/12/

03

TiN

S1

813

15

B

, D

50

30 0 30 3

0 0

18

18O

f f 10

5

2530

A

1

3 10

No ne

0.00 32

0.

00 32

0

Dek

tak

mea

sure

men

t af

ter

post

bake

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 3. 8

3. 1 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

1

D

, E

, F

30 0 30 3

15 0 15 0

14 9 3. 5

3. 1 20

19O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

2

D

, E

, F

30 0 30 3

15 0 15 0

14 9 3. 5

3. 1 20

19O

f f 10

5

2560

B

/ A

1 3

20Lo w

1

1 50

3 20

3

D

, E

, F

30 0 30 3

15 0 15 0

15 6

- 22 7

3. 1 18

19O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

4

Plas

mio

niqu

e In

c.

Page

48

/ 61


Date
























Comments

D

, E

, F

30 0 30 3

15 0 15 0

15 6

- 3. 8

3. 3 18

19O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

5 89

161

370

7

Dek

tak

mea

sure

men

t af

ter t

he

TiN

etc

h +

1st D

ry

PR

strip

ping

be

low

. Ti

N e

tch

was

ba

sed

on

visu

al

insp

ectio

n an

d w

as

clea

rly

too

long

as

Si

subs

trate

is

sure

ly

etch

ed

unde

rnea

th

expo

sed

TiN

w

hich

w

as

roug

hly

100n

m.

TiN

/Si

etch

rate

is

roug

hly

82nm

/mi

n

(ave

rage

73

7/9m

in).

TSo

i-13

/12/

TiN

S1

815

B

, 50

30

300

0

1818

Of

10

5 25

30

A

1 3

10N

o0.

000.

00

0

Dek

tak

Plas

mio

niqu

e In

c.

Page

49

/ 61


Date
























Comments

11b

03

13

D

0 3

f ne

32

32

m

easu

rem

ent

afte

r po

stba

ke

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 3. 8

3. 1 18

19O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

1

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 3. 8

3. 1 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

2

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 22 3

3. 1 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

3

D

, E

, F

30 0 30 3

15 0 15 0

15 6

- 3. 8

3. 3 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

4 50

947

054

6

Dek

tak

mea

sure

men

t af

ter t

he

TiN

etc

h +

1st D

ry

PR

strip

ping

be

low

. Ti

N e

tch

was

ba

sed

on

visu

al

insp

ectio

n an

d w

as

clea

rly

too

long

as

Si

subs

trate

is

sure

ly

etch

ed

unde

rnea

th

expo

sed

TiN

Plas

mio

niqu

e In

c.

Page

50

/ 61


Date
























Comments

whi

ch

was

ro

ughl

y 10

0nm

. Ti

N/S

i et

ch ra

te

is ro

ughl

y 64

nm/m

in

(a

vera

ge

508/

8min

).

TSo

i-12

13

/12/

03

TiN

S1

813

15

B

, D

50

30 0 30 3

0 0

18

18O

f f 10

5

2530

A

1

3 10

No ne

0.00 32

0.

00 32

0

Dek

tak

mea

sure

men

t af

ter

post

bake

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 3. 8

3. 1 18

19O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

1

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 3. 8

3. 1 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

2

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 22 3

3. 1 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

3

D

, E

, F

30 0 30 3

15 0 15 0

15 6

- 3. 8

3. 3 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

4 62

855

1

Dek

tak

mea

sure

men

t af

ter t

he

TiN

etc

h +

1st D

ry

PR

strip

ping

be

low

. Ti

N e

tch

was

Plas

mio

niqu

e In

c.

Page

51

/ 61


Date
























Comments

base

d on

vi

sual

in

spec

tion

and

was

cl

early

to

o lo

ng

as S

i su

bstra

te

is su

rely

et

ched

un

dern

eat

h ex

pose

d Ti

N

whi

ch

was

ro

ughl

y 10

0nm

. Ti

N/S

i et

ch ra

te

is ro

ughl

y 74

nm/m

in

(a

vera

ge

590/

8min

).

TSo

i-12

b 13

/12/

03

TiN

S1

813

15

B

, D

50

30 0 30 3

0 0

18

18O

f f 10

5

2530

A

1

3 10

No ne

0.00 32

0.

00 32

0

Dek

tak

mea

sure

men

t af

ter

post

bake

D

, E

, F

30 0 30 3

15 0 15 0

15 6 3. 5

3. 2 20

19O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

1

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 3. 8

3. 1 18

17O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

2

D

,

3030

1515

15-

3.18

18O

f10

5

2512

0B

/1

3 20

Lo1

1 50

3 20

3

Plas

mio

niqu

e In

c.

Page

52

/ 61


Date
























Comments

E, F

0 3

0 0

6 3. 8

1 f

A

w

D

, E

, F

30 0 30 3

15 0 15 0

15 6

- 3. 8

3. 3 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

4 53

450

751

1

Dek

tak

mea

sure

men

t af

ter t

he

TiN

etc

h +

1st D

ry

PR

strip

ping

be

low

. Ti

N e

tch

was

ba

sed

on

visu

al

insp

ectio

n an

d w

as

clea

rly

too

long

as

Si

subs

trate

is

sure

ly

etch

ed

unde

rnea

th

expo

sed

TiN

w

hich

w

as

roug

hly

100n

m.

TiN

/Si

etch

rate

is

roug

hly

65nm

/mi

n

(ave

rage

51

7/8m

in

Plas

mio

niqu

e In

c.

Page

53

/ 61


Date
























Comments

).

TSo

i-18

13

/12/

03

TiN

S1

813

15

B

, D

50

30 0 30 3

0 0

18

18O

f f 10

5

2530

A

1

3 10

No ne

0.00 32

0.

00 32

0

Dek

tak

mea

sure

men

t af

ter

post

bake

D

, E

, F

30 0 30 3

15 0 15 0

15 6 3. 5

3. 2 20

19O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

1

D

, E

, F

30 0 30 3

15 0 15 0

14 9

- 3. 8

3. 1 18

17O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

2

D

, E

, F

30 0 30 3

15 0 15 0

15 6

- 3. 8

3. 1 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

3

D

, E

, F

30 0 30 3

15 0 15 0

15 6

- 3. 8

3. 3 18

18O

f f 10

5

2512

0B

/ A

1 3

20Lo w

1

1 50

3 20

4 67

963

775

3

Dek

tak

mea

sure

men

t af

ter t

he

TiN

etc

h +

1st D

ry

PR

strip

ping

be

low

. Ti

N e

tch

was

ba

sed

on

visu

al

insp

ectio

n an

d w

as

clea

rly

Plas

mio

niqu

e In

c.

Page

54

/ 61


Date
























Comments

too

long

as

Si

subs

trate

is

sure

ly

etch

ed

unde

rnea

th

expo

sed

TiN

w

hich

w

as

roug

hly

100n

m.

TiN

/Si

etch

rate

is

roug

hly

86nm

/mi

n

(ave

rage

69

0/8m

in).

Plas

mio

niqu

e In

c.

Page

55

/ 61

Ann

ex 1

G: M

icro

wav

e Pl

asm

a as

hing

/str

ippi

ng w

ith P

LASM

A-P

REE

N II

-973

sys

tem

Sample or Work name

Date

Etch iteration #

Targeted PR layer for stripping

Heat Sink (HS), Glass Plate (GP) on HS to raise process Cooling Water Temperature (°F) : Keep below 120° F;

HASKRIStiltHASKRIS water circulator Circuit #1 (CVC Sputter)

Cooling Water Flow (GPM) : Keep in 0,3-25 GPM range;

HASKRIS(Circuit#2) Cooling Water Pressure (PSI) : HASKRIS water circulator

(Ciit#2) Pumpdown Base Pressure - Hastings/Teledyne (Torr) Gas A Regulator Pressure (PSI) (1 PSI = 51.715 Torr) Gas B Regulator Pressure (PSI) (1 PSI = 51.715 Torr)

Ar flow - Gas A (SCFH) (1 SCFH = 471.95 sccm)

O2 flow - Gas B (SCFH) (1 SCFH = 471.95 sccm)

Measured Working Pressure - Hastings/Teledyne (Torr) Power Level set with Control

Knob (%) 0% is 100W and 100%is500Wor700W? Equivalent Plasma Power (W)

0% is 100W and 100% is 500W 700W?

Cooking Time (min)

Fan Cooling Time (min)

Comments

13

/11/

01

N

ew P

yrex

Bel

l Jar

+ R

ubbe

r Gas

ket r

ecei

ved.

Old

Jar w

as fo

und

to h

ave

scra

tche

s on

its s

ealin

g ed

ge w

ith th

e ga

sket

. The

old

gas

ket s

how

s bla

ck sp

ots (

burn

t?)

Non

e 13

/11/

04

N

one

HS

68

Clo

sed

0,65

47

0.78

25

5.5

hour

s of p

umpi

ng

13

/11/

05

N

one

HS

68

Clo

sed

0,65

47

0.78

25

5.5

hour

s of p

umpi

ng

Non

e 13

/11/

06

1 N

one

HS

68

Clo

sed

0,65

47

0.77

25

3 3.

6 80

%42

015

30

4

hour

s of p

umpi

ng, B

ell j

ar te

mpe

ratu

re is

aro

und

85de

gC a

fter t

he ru

n

2 N

one

HS

68

Clo

sed

0,65

47

0.76

25

2 2.

9380

%42

015

20

B

ell j

ar te

mpe

ratu

re is

aro

und

112d

egC

afte

r the

run

3 N

one

HS

68

Clo

sed

0,65

47

0.76

25

2.5

4.34

80%

420

15

B

ell j

ar te

mpe

ratu

re is

aro

und

87de

gC a

fter t

he ru

n. F

low

-Pre

ssur

e re

latio

n is

wei

rd

so re

ly o

n th

e pr

essu

re fo

r fut

ure

use

sinc

e pr

ecis

ion

on fl

ow is

not

goo

d. P

lasm

a m

ore

stab

le b

ut le

ss lu

min

ous

3

5.82

Ver

ifica

tion

of th

e Fl

ow-P

ress

ure

rela

tion.

2 3.

2

V

erifi

catio

n of

the

Flow

-Pre

ssur

e re

latio

n.

Si1

13/1

2/06

1

S182

2 H

S 68

C

lose

d 0,

6546

0.

78

25

3

3.7

80%

420

15

15

Test

2

HS

0.78

25

3 3.

7380

%42

015

15

TSo

i-14

N

13/1

2/06

1

S182

2 H

S 68

C

lose

d 0,

6546

0.

78

25

3

3.7

80%

420

15

15

The

goal

is to

rem

ove

popp

ed/b

urnt

PR

spot

s tha

t cou

ld n

ot b

e re

mov

ed w

ith w

et

and

RIE

strip

2

H

S

0.

78

25

3

3.63

80%

420

15

15

13/1

2/09

3

G

P

0.

8

25

3

3.7

80%

420

15

120

4

G

P

0.

8

25

3

3.7

80%

420

15

10

5

G

P

0.

8

25

3

3.7

80%

420

15

10

6

GP

0.8

25

3 3.

7 80

%42

015

10

Popp

ed/B

urnt

PR

spot

s are

not

rem

oved

by

the

MW

pla

sma

strip

nei

ther

. How

ever

Th

is tr

eatm

ent/c

lean

ing

mig

ht h

ave

play

ed a

role

in c

ondi

tioni

ng th

e N

i lay

er a

nd

Ni-T

iN in

tera

ctio

n fo

r the

late

r obs

erve

d al

igne

d C

NT

grow

th o

n C

TSoi

-14N

br

oken

Brid

ge#3

!

Plasmionique Inc. Sample CTSoi-14N

/ A of D

Annex 2: Sample CTSoi-14N

Bridge1 Bridge2 Bridge3

TiN Patterning

Lithography + Wet etch (ok!) + Strip (Wet)

Si Etching

Lithography, Development

Plasma etch (RIE)


Page 56 / B of D

SiO2 etching

Wet Etch (BHF, HF)

Strip (RIE + Wet)

Ni Lift-off

Lithography, Development #5 (HMDS + Negative PR with double coat+development)

Flood Exposure (stabilizes PR for PVD process)


Page 56 / C of D

Strip (Wet + RIE + Gentle Q-tip scrub removal) #5e. Popped/Burnt PR spots still visible: add MW plasma strip with multi-step process? Is Bridge#3 broken during Q-tip scrubbing step?

Strip (MW Plasma, 6 runs of 15 min) #6e. Popped/Burnt PR spots not removed by the MW plasma strip.

Strip (Wet + Gentle Q-tip scrub removal). Bridge#1 and Bridge#2 collapsed.

CNT growth

Plasmionique Inc. Sample CTSoi-14N DRDC Valcartier

Page 56 / D of D

Bridge#3 - Optical images: Dimensions - Focus on Si handle (left), TiN surface (center), and CNT tip (right) for thickness estimation.

Bridge#3 - SEM images (No tilt): Dimensions

Bridge#3 - SEM images (70° tilt): Broken end (left), middle part (center), and holding end (right).

Bridge#3 - SEM images (70° tilt): Dimensions (uncorrected)

Plasmionique Inc. Sample CTSoi-13bN

Page 57 / A of C

Annex 3: Sample CTSoi-13bN


TiN Patterning

Lithography + Wet etch (ok?) + Strip (Wet) : TiN step thickness seems OK (no extra etch needed)

Ni Lift-off

Lithography (HMDS + Negative PR with double coat) + Development. #5

Flood Exposure (stabilizes PR for PVD process)

Strip (Wet + Gentle Q-tip scrub removal + RIE)x2 after Postbaking (oven), Descumming, and Ni coating.


Page 57 / B of C

Si Etching


Plasma etch (RIE)

SiO2 etching

Wet Etch (BHF) #30: underetching of TiN

Strip (RIE + Wet)


Page 57 / C of C

CNT growth

Optical images

Bridge#2 - Optical images: Dimensions

Bridge#1 - SEM images (70° tilt): Dimensions (uncorrected)


Page 58 / A of D

Annex 4: Sample CTSoi-14bN


TiN Patterning

Lithography + Wet etch (APM, #8, stopped due to apparent but not real Si etch!, No Si device layer was present at Bridge#3 location due to thinning) + Strip (Wet) : TiN step thickness seems too low → + Lithography + Plasma etch (RIE recipe for TiN etches Si as well → no endpoint) + Strip (RIE + Wet)

Ni Lift-off

Lithography (HMDS + Negative PR with double coat) + Development(#2)

Strip (Wet + Gentle Q-tip scrub removal + RIE) #2 after Flood Exposure, Postbaking (oven), Descumming, and Ni coating.


Page 58 / B of D

Si Etching

Lithography, Development (#3)

Plasma etch (RIE) #3

SiO2 etching


Strip (RIE + Wet + RIE)


Page 58 / C of D

CNT growth

Optical images

Optical images: Dimensions

Bridge#1 - SEM images (70° tilt, except #1): Dimensions (uncorrected)


Page 58 / D of D

Bridge#2 - SEM images (70° tilt, except #1): Dimensions (uncorrected). Bridge#2 touches the Si handle!

Plasmionique Inc. Sample CTSoi-14cN

Page 59 / A of D

Annex 5: Sample CTSoi-14cN


TiN Patterning

Lithography + Wet etch (APM, #5, stopped due to apparent but not real Si etch!) + Strip (Wet) : TiN step thickness seems too low → + Lithography #4 + Plasma etch (RIE recipe for TiN etches Si as well → no endpoint) + Strip (RIE + Wet) #2

Ni Lift-off

Lithography (HMDS + Negative PR with double coat) + Development #2



Page 59 / B of D

Si Etching



SiO2 etching

Wet Etch (BHF) #33: less underetching of TiN



Page 59 / C of D

CNT growth

Optical images

Optical images: Dimensions

SEM images: Dimensions


Page 59 / D of D

SEM images (65° tilt): Dimensions (uncorrected). Bridge#3 touches the Si handle!


Page 60 / A of C



TiN Patterning

Lithography + Wet etch (APM, #5, stopped due to apparent but not real Si etch!) + Strip (Wet) : TiN step thickness seems too low → + Lithography + Plasma etch (RIE recipe for TiN etches Si as well → no endpoint) + Strip (RIE + Wet) #2

Ni Lift-off

Lithography (HMDS + Negative PR with double coat) + Development #2



Page 60 / B of C

Si Etching



SiO2 etching




Page 60 / C of C

CNT growth

Optical images

Bridge#2 - Optical image: Dimensions

Bridge#2 - SEM images (65° tilt, except #1): Dimensions (uncorrected). TiN connection might become problematic!


Page 61 / A of C



TiN Patterning

Lithography + Wet etch (ok?) + Strip (Wet) : TiN step thickness seems OK (no extra etch needed)

Ni Lift-off

Lithography (HMDS + Negative PR with double coat) + Development (#2)

Strip (Wet + Gentle Q-tip scrub removal + RIE) #2 after Flood Exposure, Postbaking (oven), Descumming, and Ni coating. Sample broken at Bridge#3


Page 61 / B of C

Si Etching



SiO2 etching

Wet Etch (BHF) #42: severe underetching of TiN at Bridge#1



Page 61 / C of C

CNT growth

Bridge#2 - Optical images + Dimensions

Bridge#2 - SEM images (65° tilt, except #1): Dimensions (uncorrected).

fabrication and characterization of cnt/ni/tin/si bridge ...the cnt - v di el as figure nique inc...

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