fabrication of the scuba-2 detector...

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Fabrication of the SCUBA-2 Detector Arrays Integrated Micro and Nano Systems Scottish Microelectronics Centre The University of Edinburgh The King’s Buildings Edinburgh EH9 3JF Scotland, UK Introduction SCUBA-2, initiated by the Astronomy Technology Centre (ATC) at the Royal Observatory in Edinburgh is the second generation sub-millimetre detector array for the James Clark Maxwell Telescope. The new instrument will form images 100 times faster than its predecessor with improved image fidelity and an increase of more than 15 times in the field of view. See poster Y25 for more details. The detailed design and fabrication of the detectors is largely shared by the Scottish Microelectronics Centre (SMC) and the National Institute of Standards and Technology (NIST) at Boulder. Production of the SCUBA-2 prototype subarrays is now underway. Representation of a group of detector pixels within a 40x32 subarray. Each subarray is fabricated from 3” Si wafers. The detector wafer is thinned to 70μm or 100μm, depending on the detection wavelength and masked so that deep etching of the pixel well leaves a silicon ‘brick’ on a silicon nitride membrane. The surface of the brick is ion-implanted to 377 /sq to match free space and to dissipate incident radiation as heat. Underneath each brick is a TES thermometer which also acts as a backshort. Bump bonds connect each TES to a corresponding SQUID which detects the change in conduction current due to the incident radiation and amplifies the signal. A second stage of SQUIDs provides further amplification and multiplexing for readout. Microfabrication technology SCUBA-2 uses a unique combination of advanced techniques: • Thermal bonding and thinning of wafers (SMC and outside contractors) • Ion implantation to match detector to impedance of free space (SMC, University of Wales, Cardiff and outside contractor) • Deep etch micromachining to 100 μm by the Bosch process to isolate each pixel (SMC) • Deposition of 500 nm silicon nitride membrane with low tensile stress (SMC) • Transition Edge Sensor (TES) as the detector on each pixel (NIST) • Superconducting Quantum Interference Device (SQUID) for multiplexed readout (NIST) • Flip-chip bonding to the multiplexer chip by indium bumps (NIST, SMC and Raytheon) Deep-etched Structures Deep-etch silicon micro-machining by the Bosch process is used to thermally isolate each pixel. The thermal link between the pixel and the bath is a 0.5 μm silicon nitride membrane. 100 μm 10 μm trench. Etch stopped on nitride membrane. SEM image showing deep-etched silicon quarter-wave bricks and walls. The lighter colour of the bricks is caused by charge buildup. The bricks are suspended on silicon nitride membranes and are thus less well grounded than the walls. 1 2 3 5 4 M.D. Audley 1 , W.D. Duncan 1 , W.S. Holland 1 , A.J. Walton 2 , A.M. Gundlach 2 , W. Parkes 2 , Camelia Dunare 2 , T. Stevenson 2 , G. Hilton 3 , P. Ade 4 , C. Tucker 4 , and E. Schulte 5 Low-stress nitride membranes Dummy TES and heaters on the nitride membrane fabricated to test the layout of bumps and tracks. The TES is approximately 1mm square. Implantation Flip the handle wafer over Detector wafer Handle wafer Etch bonding oxide, then down to nitride to isolate pixel Deep RIE to remove handle wafer Hybridize to MUX backplane with indium bump bonds Deposit low stress nitride membrane, then pattern TES, heater, and bump bond pads. Grind back detector wafer to nλ/4 Bond wafers Screen Oxidation Etch racetrack pattern to isolate pixelss Oxidation for Si brick etch mask Wafer bonding When two clean, flat wafers from the same batch are brought together they stick. The bond is strengthened by having activated oxide surfaces before, and annealing after the bonding. (a) bonding wave starts at centre of 3” wafer; (b) propagates in seconds; (c) bonding complete (Figure courtesy of Karl Hobart) Indium bump bonds Each subarray is held together with ~160,000 bump bonds. There are ~80 bumps per pixel plus a forest of bumps around the edges. Indium bumps 20μm square are used to hybridise the detector and MUX wafers. (Photo: Raytheon Vision Systems) Fabrication steps Bump bond TES on SiN membrane Si brick λ/4 thick SQUID MUX backplane 1.135 mm 50 μm walls

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Page 1: Fabrication of the SCUBA-2 Detector Arraysltd-10.ge.infn.it/trasparencies/Y/Y26_Audley.pdfFabrication of the SCUBA-2 Detector Arrays Integrated Micro and Nano Systems Scottish Microelectronics

Fabrication of the SCUBA-2 Detector Arrays

Integrated Micro and Nano Systems

Scottish Microelectronics CentreThe University of EdinburghThe King’s Buildings

Edinburgh EH9 3JF Scotland, UK

IntroductionSCUBA-2, initiated by the Astronomy Technology Centre (ATC) at the Royal Observatory in Edinburgh is the second generation sub-millimetre detector array for the James Clark Maxwell Telescope. The new instrument will form images 100 times faster than its predecessor with improved image fidelity and an increase of more than 15 times in the field of view. See poster Y25 for more details. The detailed design and fabrication of the detectors is largely shared by the Scottish Microelectronics Centre (SMC) and the National Institute of Standards and Technology (NIST) at Boulder. Production of the SCUBA-2 prototype subarrays is now underway.

Representation of a group of detector pixels within a 40x32 subarray. Each subarray is fabricated from 3” Si wafers. The detector wafer is thinned to 70µm or 100µm, depending on the detection wavelength and masked so that deep etching of the pixel well leaves a silicon ‘brick’ on a silicon nitride membrane. The surface of the brick is ion-implanted to 377 Ω/sq to match free space and to dissipate incident radiation as heat. Underneath each brick is a TES thermometer which also acts as a backshort. Bump bonds connect each TES to a corresponding SQUID which detects the change in conduction current due to the incident radiation and amplifies the signal. A second stage of SQUIDs provides further amplification and multiplexing for readout.

Microfabrication technologySCUBA-2 uses a unique combination of advanced techniques:

• Thermal bonding and thinning of wafers (SMC and outside contractors)• Ion implantation to match detector to impedance of free space (SMC, University of Wales, Cardiff and outside contractor)• Deep etch micromachining to 100 µm by the Bosch process to isolate each pixel (SMC)• Deposition of 500 nm silicon nitride membrane with low tensile stress (SMC)• Transition Edge Sensor (TES) as the detector on each pixel (NIST)• Superconducting Quantum Interference Device (SQUID) for multiplexed readout (NIST)• Flip-chip bonding to the multiplexer chip by indium bumps (NIST, SMC and Raytheon)

Deep-etched StructuresDeep-etch silicon micro-machining by the Bosch process is used to thermally isolate each pixel. The thermal link between the pixel and the bath is a 0.5 µm silicon nitride membrane.

100 µm 10 µm trench. Etch stopped on nitride membrane.

SEM image showing deep-etched silicon quarter-wave bricks and walls. The lighter colour of the bricks is caused by charge buildup. The bricks are suspended on silicon nitride membranes and are thus less well grounded than the walls.

1 2 3 54

M.D. Audley1, W.D. Duncan1, W.S. Holland1, A.J. Walton2, A.M. Gundlach2, W. Parkes2, Camelia Dunare2, T. Stevenson2, G. Hilton3, P. Ade4, C. Tucker4, and E. Schulte5

Low-stress nitride membranes

Dummy TES and heaters on the nitride membrane fabricated to test the layout of bumps and tracks. The TES is approximately 1mm square.

Implantation

Flip the handle wafer over

Detector wafer

Handlewafer

Etch bonding oxide,then down to nitride to isolate pixel

Deep RIE to remove handle wafer

Hybridize to MUX backplane with indium bump bonds

Deposit low stress nitride membrane, then pattern TES, heater, and bump bond pads.

Grind back detector wafer to nλ/4

Bond wafers

ScreenOxidation

Etch racetrack pattern to isolate pixelss

Oxidation for Sibrick etch mask

Wafer bondingWhen two clean, flat wafers from the same batch are brought together they stick. The bond is strengthened by having activated oxide surfaces before, and annealing after the bonding.

(a) bonding wave starts at centre of 3” wafer; (b) propagates in seconds; (c) bonding complete(Figure courtesy of Karl Hobart)

Indium bump bondsEach subarray is held together with ~160,000 bump bonds. There are ~80 bumps per pixel plus a forest of bumps around the edges.

Indium bumps 20µm square are used to hybridise the detector and MUX wafers.(Photo: Raytheon Vision Systems)

Fabrication steps

Bump bond

TES on SiN membrane Si brick λ/4 thickSQUID MUX backplane

1.135 mm50 µmwalls