factsheet fp2 - 2n gold wire for proven ultimate reliability · fp2 2n gold wire for proven...

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FP2 2N Gold Wire for Proven Ultimate Reliability FP2 Benefits Ultimate reliability wire through slow and uniform inter-metallic growth Superior elastic modulus provides sweep resistance for long wire span or ultra-fine pitch Short, fine-grain HAZ permits extremely low looping Excellent for ultra-fine wire diameters and low-k device compatibility Recommended Technical Data of FP2 Diameter Microns 15 18 20 23 25 28 30 32 33 Mils 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.25 1.3 Recommended Specs for Ball Bonding Elongation (%) 2 – 5 2 – 6 2 – 6 2 – 7 2 – 7 2 – 7 2 – 7 2 – 7 2 – 7 Breaking Load (g) 3 – 7 5 – 9 6 – 11 9 – 14 11 – 16 14 – 20 16 – 21 18 – 24 19 – 26 In-Line Pad Pitch (μm) Min. In-Line Pad Pitch 35 45 50 60 65 70 80 For other diameters, please contact Heraeus Bonding Wires sales representative. 6.25 μm 10,000 hours Reliable intermetallic grwoth – Cross-section of device after aging @ 175°C Cross-section of Fine & Short HAZ 20 μm Slow Intermetallic Phase Growth Rate 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1 10 FP2 Rev Wire 100 1000 10000 Isothermal Aging @ 175°C [hrs] IP thickness [μm]

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Page 1: Factsheet FP2 - 2N Gold Wire for Proven Ultimate Reliability · FP2 2N Gold Wire for Proven Ultimate Reliability FP2 Benefits Ultimate reliability wire through slow and uniform inter-metallic

FP2 2N Gold Wire for Proven Ultimate Reliability

FP2 BenefitsUltimate reliability wire through slowand uniform inter-metallic growthSuperior elastic modulus provides sweep resistance for long wire span or ultra-fine pitchShort, fine-grain HAZ permits extremelylow loopingExcellent for ultra-fine wire diametersand low-k device compatibility

Recommended Technical Data of FP2

Diameter Microns 15 18 20 23 25 28 30 32 33

Mils 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.25 1.3

Recommended Specs for Ball Bonding

Elongation (%) 2 – 5 2 – 6 2 – 6 2 – 7 2 – 7 2 – 7 2 – 7 2 – 7 2 – 7

Breaking Load (g) 3 – 7 5 – 9 6 – 11 9 – 14 11 – 16 14 – 20 16 – 21 18 – 24 19 – 26

In-Line Pad Pitch (µm)

Min. In-Line Pad Pitch 35 45 50 60 65 70 80

For other diameters, please contact Heraeus Bonding Wires sales representative.

6.25 µm10,000 hours

Reliable intermetallic grwoth –Cross-section of device after aging @ 175°C

Cross-section of Fine & Short HAZ

20 µm

Slow Intermetallic Phase Growth Rate5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.01 10

FP2

Rev Wire

100 1000 10000

Isothermal Aging @ 175°C [hrs]

IP th

ickn

ess

[µm

]

Page 2: Factsheet FP2 - 2N Gold Wire for Proven Ultimate Reliability · FP2 2N Gold Wire for Proven Ultimate Reliability FP2 Benefits Ultimate reliability wire through slow and uniform inter-metallic

FP2 Characteristics for 25 µm diameter

Non-Gold Elements < 1%

Elastic Modulus � 90 GPa

Heat Affected Zone (HAZ) 35 – 110 µm

Melting Point 1063 °C

Density 19.28 g/cm3

Heat Conductivity 2.25 W/cm.K

Electrical Resistivity 3.24 µ�-cm

Coeff. of Linear Expansion (20 – 100°C) 14.2 ppm/K

Fusing Current for 30 µm, dia 10 mm length (in air) 0.37 A

FAB Hardness 60 – 70 HV (0.01 N/5 s)

10,000 hours @ 175°C HTS (1 mil)

12

10

8

6

4

2

0

1 100 200 500 1000 2000 3000 5000 10000

Isothermal Aging @ 175°C [hrs]

Ball

Pull

Stre

ngth

[g]

Ultra Fine Wire @ 200°C HTS (0.6 mil)6

5

4

3

2

1

0

1 100 200 500 600 800 900 1000 1500

Isothermal Aging @ 200°C [hrs]

Ball

Pull

Stre

ngth

[g]

Slightly larger FAB over 4N Wire2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.501.00 1.20

FP2 4N

1.40 1.60 1.80 2.00 2.20

Dialed in FAB [mils]

Aver

age

FAB

[mils

]

App

licat

ion

Not

e:.Dialed FAB is slightly larger than usual 4N wire

(refer to graph on the right)

.Recommended to use K&S Fortus Capillary with FP2

Gold Wire Segmentation by Properties

Superior Reliability

Widest Bonding Highest LoopingWindow Performance

Superior Reliability

Widest Bonding Highest LoopingWindow Performance

Superior Reliability

Electrical Performance

Widest Bonding Highest LoopingWindow Performance

High

Average

Sensitive pad

structure

High Loop / Low Loop

N, L

ayou

t: HE

T140

12-051

6-1

The

data

giv

en h

ere

is v

alid

. We

rese

rve

the

right

to m

ake

tech

nica

l alte

ratio

ns.

Heraeus ElectronicsHeraeus Deutschland GmbH & Co. KG Heraeusstraße 12-1463450 Hanau, Germanywww.heraeus-electronics.com

AmericasPhone +1 610 825 6050 [email protected]

Asia PacificPhone +65 6571 7677 [email protected]

ChinaPhone +86 21 3357 5457 [email protected]

Europe, Middle East and Africa Phone +49 6181 35 3069

+49 6181 35 3627 [email protected]

The descriptions and engineering data shown here have been compiled by Heraeus using commonly-accepted procedures, in conjunction with modern testing equipment, and have been compiled as according to the latest factual knowledge in our possession. The information was up-to date on the date this document was printed (latest versions can always be supplied upon request). Although the data is considered accurate, we cannot guarantee accuracy, the results obtained from its use, or any patent infringement resulting from its use (unless this is contractually and explicitly agreed in writing, in advance). The data is supplied on the condition that the user shall conduct tests to determine materials suitability for particular application.