feature-level compensation & control f lcc overview april 5, 2006 a uc discovery project

Feature-level Compensation & Control

FLCCOverviewApril 5, 2006

A UC Discovery Project

04/05/2006 FLCC - Overview

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FLCC

The Industry Team

17 Supporters2 Contributors

2 Former


3

FLCC

Meeting Objectives and Agenda

Objectives– Get re-acquainted

• Real Technologist & Real Student interactions => collaboration

– Results to date on Year 3• Faculty overview presentations and student poster discussions

• Feedback on Year 3 and guidance on Year 4 and beyond

Agenda– Faculty Overview Presentations (1:10-2:10; 2:25-3:05)

– Questions and Answers (3:05-3:15)

– Student Poster Discussion (3:30-4:45)

– Steering Committee Meeting (4:45-5:45)

– Feedback (5:45-6:15)


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FLCC

Feature Level Compensation and Control:Industry/University collaboration

through the U.C. Discovery Program

Test Structures

Sensors

Physical Models

Statistical Models

ProcessesProcesses MetrologyMetrology

SystemSystem

FLCC

Starting Year 3Scoping Year 4

Four year research vision for compensating and controlling variability at the feature level

Lithography CMP Plasma Tech Device/Diff/IntSensors & Ctrl

Novel Vehicles

Collaborative Experiments

Novel Apparatus


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FLCC

Thanks to Our Participating Companies and the U.C. Discovery Program

• Very fortunate to have continuity in industry support from 17 companies with UC Discovery matching for 17 students at a time of cut-backs in university research.

• Support for Our University Research is only sustainable long term if it adds value to the Bottom Line of each of our Participating Companies.

• Mutual value starts with dialog between Working Technologists and Our Future Technologists.

• Looking for Guidance on High-Risk Opportunities where University Talent can do Pioneering Research.


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FLCC

FLCC Assets for High-Risk Research• Academic Knowledge and Skills on Broad Fronts

– Physical Mechanisms, Process, Device, CAD, Circuits

• Flexible Apparatus, Platforms and Software– Scientific Apparatus and Instrumented Process Apparatus– Source Code for Rapid Prototyping

• Working Structure of FLCC– Novel Test Vehicle: ‘Zero Foot-Print Metrology’– Multi-Student Test Masks

• Collaboration with FLCC Companies– Phase-Shifting Test Masks– Vanilla CMOS Wafer Fabrication


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FLCC

Scientific Apparatus: Leverage Univ. Legacywith minor investment (4%)

Sample and sample carrier

Slurry film Polishing padRotating platen

Slurry deliverypressure

Potentiostat

sam

ple

2

Ref.

elec

trode

sam

ple

1

Polisher

Atomic Layer Deposition Source (Verify Molecular Dynamics Simulation of Clusters in FC)

0 200 400 6001015

1016

1017

1018

Con

cent

ratio

n (a

tom

s/cm

3)

Depth (nm)

B in Ge as-imp; 32keV, 1013 cm-2

550C 30 min anneal - simulation 550C 30 min anneal - SIMS data B implantation - simulation

Annealing Furnace (diffusion Studies)

LEO SEM and Hitachi CD-SEM (PC and PCI bus upgrades)

CMP Wet-Bench


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FLCC

Process Apparatus: Industry ContributionAMAT Centura (Y1, Y3), laser for 248 nm AMSL (Y2)

AMAT Centura

Oxi

deSi T

renc

h

Al

Zero Foot-PrintEnd Point

Sensors (NC)

Etch ModelingPlasma (JC, DG)

Test StructuresLith (AN)

• Emission• Species• Probe

i

Future MetalsDevice (TK)

• Compatible Gates for high-K• MEMS

CorrosionCMP(FD)

• Passivation alternatives


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FLCC

Aerial Image Sensor

Novel Vehicle: Zero Foot-Print Metrology

i

Interdisciplinary • Development

• Heterogeneous Assembly• Metrology and Control Interface•Modeling

• Monitoring Applications• Plasma Etch: End- Point Detection• CMP: End-Point Detection• Lithography: Image Monitor

Metrology wafer

Detection Window

CMP

Plasma Etching


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FLCC

Multi-Student Process-EDA Test Mask

4 Phase Alt-PSM: High-NA, PolFall 04; Fab: PhotronicsTested: AMD, Nikon, => UCB

Att-PSM: Short Loop NMOSMar 05; Fab: DuPontFab: Cypress

4 Phase Pin-Hole Alt-PSM: High-NA, Pol; Spring 05; Fab: Benchmark & DuPontTest Plan: Nikon, AMD

193 nm phases+ binary 248

2006 Mar Att-PSM for Enhanced NMOS, Apr 4 Phase Att-PSM for PI


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FLCC

2006 Vanilla CMOS Wafer Fab at Cypress

Cypress/DuPontExperiments

Device Process

Circuits

60nm 60.5nm 61nm 61.5nm …

Ioff = 2nA 1.5nA 1.2nA 1nA 0.8nA

60nm 60.5nm 61nm 61.5nm …

Ioff = 2nA 1.5nA 1.2nA 1nA 0.8nA

VT

Shift with different tips implant

80n m

VT

Shift with different tips implant

80n m

=+ =+

Super low power design

Finding correlation between gates

Circuits built to measure circuit variations

Using device design to measure CD variation

Characterizing your process


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FLCC

FLCC Seminars and Tutorials (2:10-3PM M)9/8/03 Kickoff meeting All

2/7/05 Seminar on Lithography Video Neureuther

2/14/05 Metrology SPIE Previews Video Spanos

3/7/05 Modeling of CMP Video Dornfeld

3/28/05 Fluid Modeling of Plasmas Video Graves

4/18/05 Diffusion Video Haller

5/2/05 Tutorial on Wireless Wafer Technology Video Spanos

9/19/05 Lithography Video Neureuther

11/14/05 Process Integration Video King

10/17/05 CMP Slurry Video Doyle

10/31/05 Lithography Video Neureuther

11/14/05 Plasma Etching Video Chang

11/28/05 Kalman Filtering Video Poolla

1/23/06 Kickoff Year III Video All

2/6/06 Test Masks Video Neureuther

3/6/06 CMP Colloidal Effects Video Talbot

3/20/06 Advanced Substrates for CMOS Video Cheung

32 talks

(19 video)

April 17

May 1


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FLCC

Jason Cain PhD, Tanuja Gopal PhD, Edward Hwang PhD, Mark Nierode M.S., Garth Robins, PhD, Hugh Silvestri PhD, Ling Wang, PhD and 2 UG Joe Chien and Hideaki Oshima

The Student Team

CAMPUS STUDENT AREA ADVISOR

Berkeley Alex De Feo CMP Dornfeld

Berkeley Sunghoon Lee CMP Dornfeld

Berkeley Sangkee Min (Post Doc) CMP Dornfeld

Berkeley Shantanu Tripathi CMP Doyle

San Diego Robin Ihnfeldt CMP Talbot

Berkeley Zheng Xin (Eric) Liu Process Integration Cheung

Berkeley Christopher Liao Process Integration Cheung

Berkeley Pankaj Kalra Process Integration King

Berkeley Eric Chin Lithography Neureuther

Berkeley Juliet Holwill Lithography Neureuther

Berkeley Gregory McIntyre Lithography Neureuther

Berkeley Wojtek Poppe Lithography Neureuther

Berkeley Paul Friedberg Sensors & Control Spanos

Berkeley Vorrada Loryuenyong Sensors & Control Cheung

Berkeley Kurt Moen Sensors & Control Spanos

Berkeley Jing Xue Sensors & Control Spanos

Berkeley Qiaolin Zhang Sensors & Control Spanos and Poolla

Los Angeles John Hoang Plasma Technology Chang

Berkeley Cheng-Che Hsu Plasma Technology Graves

Berkeley J.T. Gudmundsson Plasma Technology Lieberman

Berkeley Emi Kawamura Plasma Technology Lieberman

Berkeley Sungjin Kim Plasma Technology Lieberman

Berkeley Alan Wu Plasma Technology Lieberman


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FLCC

The Faculty Team

Jane Chang ChE UCLA Plasma mechanisms and feature modeling

Cheung, Nathan EECS UCB Plasma modeling, diagnostics, surface interactions

Dornfeld, David ME UCB Chemical-Mechanical Planarization

Doyle, Fiona MatSci UCB Chemical-Mechanical Planarization

Graves, David ChE UCB Plasma modeling, diagnostics, surface interactions

Haller, Eugene MatSci UCB Dopant and Self-Diffusion in Si and SiGe Alloys

King, Tsu-Jae EECS UCB Novel Electron Devices

Lieberman, Michael EECS UCB RF sources and E&M plasma modeling

Neureuther, Andrew EECS UCB Pattern Transfer Modeling/Simulation

Poolla, Kameshwar ME UCB AEC/APC and Metrology

Spanos, Costas EECS UCB IC Process Metrology, Diagnosis and Control

Talbot, Jan CE UCSD Chemical-Mechanical Planarization


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FLCC

The Staff Team

http://flcc.berkeley.edu Access restricted by password

Principal InvestigatorAndrew Neureuther 510 Cory Hall, ERLphone: (510) 642-4590fax: (510) [email protected]

System SupportChangrui Yin550 Cory Hall,phone: (510) 643-7542fax: (510) [email protected]

Contract ManagementEllen Lenzi 558 Cory Hall, ERLphone: (510) 643-9665fax: (510) [email protected]

Administrative SupportCharlotte Jones558 Cory Hall, ERLphone: (510) 642-1818fax: (510) [email protected]

Teleconference1-888-446-3559code: 510-643-2834

feature-level compensation & control f lcc overview april 5, 2006 a uc discovery project

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