finall ed lab manual 10092011

INSTITUTE OF RESEARCH & TECHNOLOGY

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ELECTRONIC DEVICES

LAB MANUAL

IIIrd

SEMESTER B.E (E&C)

(For private circulation only)

RAJEEV GANDHI TECHNOLOGICAL UNIVERSITY

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

RADHARAMAN INSTITUTE OF RESEARCH &TECHNOLOGY

RATIBAD, BHOPAL

Prepared by:

PRADEEP RAGHUWANSHI,MTECH(LECTURER)


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LIST OF EXPERIMENTS

1. V I Characteristics of PN Junction diode .

2. V I Characteristics of Zener diode.

3. V I Characteristics of Varactor Diode.

4. V I Characteristics of Schottky Diode.

5. V I Characteristics of Tunnel Diode.

6. V I Characteristics of Photo Transistor.

7. Study of Clipper & Clamper circuit.

8. Study of Half wave Rectifier with and without filter.

9. V I Common Emitter Configurations (BJT).

10. V I Characteristics of FET .

11. V I Characteristics of UJT.

12. V I Characteristics of Mosfet.


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Experiment no.1 P-N JUNCTION DIODE CHARACTERISTICS

AIMAIMAIMAIM:-To observe and draw the Forward and Reverse bias V-I Characteristics of

a P-N Junction diode.

APPARATUSAPPARATUSAPPARATUSAPPARATUS:-

THEORY:THEORY:THEORY:THEORY:----

CIRCUIT DIAGRAMsCIRCUIT DIAGRAMsCIRCUIT DIAGRAMsCIRCUIT DIAGRAMs::::----

FORWARDFORWARDFORWARDFORWARDBIAS:BIAS:BIAS:BIAS:----

REVERSE BIASREVERSE BIASREVERSE BIASREVERSE BIAS:-


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MODEL WAVEFORM:MODEL WAVEFORM:MODEL WAVEFORM:MODEL WAVEFORM:----


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OBSERVATION:OBSERVATION:OBSERVATION:OBSERVATION:----

PRECAUTIONSPRECAUTIONSPRECAUTIONSPRECAUTIONS:-

1. All the connections should be correct.

2. Parallax error should be avoided while taking the readings from the Analog

meters.

RESULT:RESULT:RESULT:RESULT:---- Forward and Reverse Bias characteristics for a p-n diode is observed

Viva voice:-

1. What is atomic number?

2. What is the relation for the maximum number of electrons in each shell?

3. What are valence electrons?

4. What is forbidden energy gap?

5. What are conductors? Give examples?

S.NOS.NOS.NOS.NO

CURRENT CURRENT CURRENT CURRENT

THROUGHTHROUGHTHROUGHTHROUGH

APPLIED APPLIED APPLIED APPLIED

VOLTAGE(V)VOLTAGE(V)VOLTAGE(V)VOLTAGE(V)

VOLTAGE ACROSS VOLTAGE ACROSS VOLTAGE ACROSS VOLTAGE ACROSS

DIODE(V)DIODE(V)DIODE(V)DIODE(V)

CURRENT THROUGHCURRENT THROUGHCURRENT THROUGHCURRENT THROUGH

DIODE(mA)DIODE(mA)DIODE(mA)DIODE(mA)


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Experiment no. 2

ZENER DIODE CHARACTERISTICS

AIM: AIM: AIM: AIM: ---- a) To observe and draw the static characteristics of a zener diode

b) To find the voltage regulation of a given zener diode

APPARATUSAPPARATUSAPPARATUSAPPARATUS: -

THEORY:THEORY:THEORY:THEORY:----

CIRCUIT DIAGRAM:CIRCUIT DIAGRAM:CIRCUIT DIAGRAM:CIRCUIT DIAGRAM:----

STATIC CHARACTERISTICS:STATIC CHARACTERISTICS:STATIC CHARACTERISTICS:STATIC CHARACTERISTICS:----

OBSERVATIONS:OBSERVATIONS:OBSERVATIONS:OBSERVATIONS:-

Static characteristicsStatic characteristicsStatic characteristicsStatic characteristics:-

S.NO

ZENER VOLTAGE(VZ)

ZENER CURRENT(IZ)

Model waveform:-


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RESULT:-a) Static characteristics of zener diode are obtained and drawn.


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b) Percentage regulation of zener diode is calculated.

PRECAUTIONS:- 1. The terminals of the zener diode should be properly identified

2. While determined the load regulation, load should not be immediately shorted.

3. Should be ensured that the applied voltages & currents do not exceed the ratings of the diode.

Viva voice:-

1. What are insulators? Give examples?

2. What are Semiconductors? Give examples?

3. What are the types of Semiconductor?

4. What is Intrinsic Semiconductor?

5. What is Extrinsic Semiconductor?


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Experiment no. 3

Characteristics of Varactor Diode

AIM: - To study and verify characteristics of Varactor Diode

APPRATUS REQURIED:-

THEORY:-

Circuit diagram:-

Reverse Breakdown Voltage and Reverse Leakage Current:-


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OBSERVATION TABLE:-

S.NO. VR IR BREAKDOWN VOLTAGE

RESULT:-

Viva voice:-

1. What is P-type Semiconductor?

2. What is doping?

3. What is N-type Semiconductor?

4. Which is majority and minority carrier in N-type Semiconductor?

5.which is majority and minority carrier in P-type Semiconductor?

6. What is depletion region in PN junction?


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Experiment no. 4

V-I Characteristics of Schottky Diode

AIM: - To study and verify characteristics of Schottky Diode

APPRATUS REQURIED:-

THEORY:-

Circuit symbol:-

Schottky diode schematic symbol

V-I CHARACTERISTICS:-


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FIG. Comparison of characteristics of hot-carrier and p-n junction diodes.

OBSERVATION TABLE:-

S.NO VD ID


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RESULT:-

Viva voice:-

1. What is barrier voltage?

2. What is meant by biasing a PN junction?

3. What are the types of biasing a PN junction?

4. What is forward bias and reverse bias in a PN junction?

5. What is Reverse saturation current?


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Experiment no. 5

Characteristics of Tunnel Diode

AIM: - To verify the V-I characteristics of tunnel diode

APPRATUS REQURIED:-

THEORY:-

OBSERVATION TABLE:-

S.NO VT IT IP IV


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FIG. Tunnel diode characteristics.

Viva voice:

1. Explain the construction, working, characteristics of PN junction diode?

2. Give the diode current equation?

3. Give two applications of PN junction diode.

4. What are semiconductors? Explain the types of semiconductors?

5. What is reverse break down?


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Experiment no. 6

Characteristics of Photo Transistor

AIM: - To study and verify characteristics of Photo Transistor.

APPRATUS REQURIED:-

THEORY:-

The fundamental behavior of photoelectric devices was introduced earlier with the description

of the photodiode. This discussion will now be extended to include the phototransistor, which

has a photosensitive collector–base p-n junction. The current induced by photoelectric effects is

the base current of the transistor. If we assign the notation for the photoinduced base

current, the resulting collector current, on an approximate basis, is

A representative set of characteristics for a phototransistor is provided in Fig. with the symbolic

representation of the device. Note the similarities betweenthese curves and those of a typical

bipolar transistor. As expected, an increase in lightintensity corresponds with an increase in

collector current. To develop a greater de-gree of familiarity with the light-intensity unit of

measurement, milli watts per square centimeter, a curve of base current versus flux density

appears in Fig.a Note the exponential increase in base current with increasing flux density. In

the same figure, a sketch of the phototransistor is provided with the terminal identification and

the angular alignment.

V-I Characteristics & Circuit symbol:-


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Phototransistor: Fig (a) collector characteristics (b) symbol.

OBSERVATION TABLE:-

ICC VCC

RESULT:-


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Viva voice:-

1. What is photo transistor?

2. Define the term diffusion capacitance.

3. What is break down? What are its types?

4. Define dynamic resistance.

5. What is the static resistance of a diode?


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Experiment no. 7

Clipper & Clamper circuit

AIM: - To design a Clipping circuit for the given specifications and hence to plot its O/P

APPARATUS REQUIRED:-

Theory:-

A clipping circuit consists of linear elements like resistors and non-linear elements like junction

diodes or transistors, but it does not contain energy-storage elements like capacitors. Clipping

circuits are used to select for purposes of transmission, that part of a signal wave form which

lies above or below a certain reference voltage level.

PROCEDURE: -

1. Connections are made as shown in the circuit diagram.

2. A sine wave Input Vi whose amplitude is greater than the clipping level is

applied.

3. Output waveform Vo is observed on the CRO.

4. Clipped voltage is measured and verified with the designed values

Series clippers:-

(a) To pass –ve peak above vr level:


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(b) To pass +ve peak above vr level


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CLAMPING CIRCUITS:-

AIM:- To design a Clamping circuit for the given specifications and hence to plot its output

APPARATUS REQUIRED:-

THEORY:-

(a)Positive peak clamped at Vr level :-

(b) Positive peak clamped at +ve Reference :-


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c) Positive peak clamped at –ve reference level :-

d) Negative peak clamped to Vr level :-


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f) Negative peak clamped at +ve reference level :-


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e) Negative peak clamped at –ve reference level :-

RESULT:-

Viva voice:-

1. What is clipper?

2. What is clamper?

3. Define dynamic conductance

4. Define the term transition capacitance?

5. What is meant by forward recovery time?


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Experiment no. 8

HALF – WAVE RECTIFIER

AIM: - To obtain the load regulation and ripple factor of a half-rectifier.

1. with Filter 2. without Filter

APPARATUS:-

THEORY:-

CIRCUIT DIAGRAM:-

OBSERVATIONS:-

WITHOUT FILTER:-

Vdc=Vm/π, Vrms=Vm/2, Vac=√ ( Vrms2- Vdc

2)


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Vm(v) Vac(v) Vdc(v) r= Vac/ Vdc

WITH FILTER:-

V1(V) V2(V)

Vdc=

(V1 +V2 )/2

Vac=

(V1 –V2 )/2√3

r =

Vac / Vdc

PRECAUTIONS:-

1. The primary and secondary sides of the transformer should be carefully identified.

2. The polarities of the diode should be carefully identified.

3. While determining the % regulation, first Full load should be applied and then it should be

decremented in steps.

RESULTS:-

Viva voice:-

1. What is a rectifier?

2. Explain the types of rectifier?

3. What is meant by reverse recovery time?

4. What are break down diodes?

5. Define storage time.


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Experiment no. 9

TRANSISTOR CE CHARACTERSTICS

AIM:- 1. To draw the input and output characteristics of transistor connected in

CE configuration

2. To find β of the given transistor.

APPARATUS:-

CIRCUIT DIAGRAM:-

OBSERVATIONS:-

INPUT CHARACTERISTICS:


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MODEL GRAPHS:-

INPUT CHARACTERSTICS:-

OUTPUT CHARECTERSTICS:-


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PRECAUTIONS:-

1. The supply voltage should not exceed the rating of the transistor

2. Meters should be connected properly according to their polarities

RESULT:-

1. the input and out put characteristics of a transistor in CE configuration are Drawn

2. the β of a given transistor is calculated

Viva voice:-

1. What is transistor?

2. Why NPN transistor is preferred over PNP transistor?

3. What are the terminals present in a transistor?

4. Which of the terminal is heavily doped & which is lightly doped in BJT?

5. Why base is very thin in BJT?


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Experiment no. 10

FET CHARACTERISTICS

AIM: a). To draw the drain and transfer characteristics of a given FET.

b). To find the drain resistance (rd) amplification factor (µ) and

Trans conductance (gm) of the given FET.

APPARATUS: -

THEORY:-

CIRCUIT DIAGRAM:-


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OBSERVATIONS :-

DRAIN CHARACTERISTICS:-

MODEL GRAPH:-

TRANSFER CHARACTERISTICS:-


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DRAIN CHARACTERISTICS:-

PRECAUTIONS:-

1. The three terminals of the FET must be care fully identified

2. Practically FET contains four terminals, which are called source, drain, Gate,

substrate.

3. Source and case should be short circuited.

4. Voltages exceeding the ratings of the FET should not be applied.

RESULT :-


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Viva voice:-

1. What is FET?

2. Why FET is called unipolar device?

3. Why FET is called voltage controlled device?

4. What are the two main types of FET?

5. ) Define pinch off voltage in FET


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Experiment no. 11

UJT CHARACTERISTICS

AIM:- To observe the characteristics of UJT and to calculate the Intrinsic Stand-Off

Ratio(η).

APPARATUS:-

THEORY:-

CIRCUIT DIAGRAM:-


A graph is plotted between VEE and IE for different values of VBE.


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MODEL GRAPH:-

OBSEVATIONS:

CALCULATIONS: VP = ηVBB + VD

η = (VP-VD) / VBB

η = ( η1 + η2 + η3 ) / 3


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RESULT: The characteristics of UJT are observed and the values of Intrinsic Stand-Off

Ratio is calculated.

Viva voice:-

1. What is ujt?

2. What is instrinsic stand off ratio?

finall ed lab manual 10092011

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