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Reactivation Noise Suppression

With Sleep Signal Slew Rate

Modulation in MTCMOS Circuits

Under the Guidance of

Y.Baba Salauddin,M.Tech Presented By

Asst.professor. A.Reddeiah,

(11741D5713)

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OBJECTIVE

Multi-threshold CMOS(MTCMOS) is commonly used

for supressing leakage currents in idle intregated

circuits.

Power and ground distribution network noiseproduced during sleep to active mode in MTCMOS

circuits.

Sleep signal slew rate modulation techniques for

suppressing mode-transition noise are explored in

this project.

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INTRODUCTION

Multi-threshold CMOS (MTCMOS) also known as

power/ground gating is most commonly used for

leakage power reduction .

With more frequent transitions between ACTIVE and

SLEEP modes operation to achieve more effective

leakage power savings, reactivation noise has become

an important concern in modern ICs.

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EXISTED SYSTEM

The sub threshold leakage currents currentlydominate the overall power consumption.

When the MTCMOS technique is directly

applied to the sequential circuit, the data inthe elements is lost during the sleep mode.

Single-phase sleep signal slew rate modulation

and Stepwise Vgs MTCMOS techniques aregives Less performance and high powerconsumption.

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PROPOSED SYSTYEM

The single phase sleep signal slew ratemodulation technique is not suitable for fast

and energy efficient power/ground gating in

high performance integrated circuits.

In this proposed system, Digital triple phase

sleep signal slew rate modulation is used.

This technique is commonly aimed to reducepower consumption, increases speed and

reduces noise in MTCMOS circuits.

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Sleep signal slew rate modulator techniques

Three types of techniques are using to supress

the noise in the MTCMOS circuits.

1.Single-phase sleep signal slew rate modulator

2.Stepwise Vgs MTCMOS.

3.Triple-phase sleep signal slew rate modulator

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SINGLE-PHASE SLEEP SIGNAL

SLEW RATE MODULATION

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When the voltage level of the sleep signal is

lower than the threshold voltage ,the sleeptransistor operates in weak inversion region.

The noise induced on the ground distributionnetwork is negligible for Vgs

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Stepwise Vgs MTCMOS

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A stepwise Vgs MTCMOS circuit is activated in

two steps as follows.

The sleep signal transitions from 0V to an

intermediate voltage level Vx (0v < Vx < Vdd)during the first step of a reactivation event.

The sleep transistor is weakly activated with alow gate voltage (Vx).

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Triplephase sleep signal slew rate modulation

An alternative triple-phase sleep signal slewrate modulation (TPS) technique is to suppress

the reactivation noise while accelerating the

reactivation process in MTCMOS circuits.

sleep transistor produces negligible noise in the

weak inversion region of operation (when Vgs