functional polymer/1 semester, 2006 part iii. functional polymers … · 2006-04-05 · prof....
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![Page 1: Functional Polymer/1 Semester, 2006 Part III. Functional Polymers … · 2006-04-05 · Prof. Jin-Heong Yim Functional Polymer/1st Semester, 2006 Part III. Functional Polymers for](https://reader030.vdocuments.net/reader030/viewer/2022040521/5e7a2236f42f8d3b3308a5f7/html5/thumbnails/1.jpg)
Prof. Jin-Heong Yim
Functional Polymer/1st Semester, 2006_________________________________________
Part III. Functional Polymers for Semiconductor Applications
Outline of PartPhotoresist for Semiconductor Applications
Introduction of photolithographyPhotoresist Materials for Exposure at 193 nm WavelengthChemically Amplified Resists for F2 Excimer laser Lithography
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Prof. Jin-Heong Yim
Photoresist Materials for Exposure at 193 nm Wavelength
128 Mbyte SDRAM
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Prof. Jin-Heong Yim
C OO
O
O
C OO
C OO
C OO O
Dry-EtchingResistance
Dry-EtchingResistance AdhesionAdhesion Solubility
ChangeSolubilityChange
OH
COOH
OR
COOR
Design of Chemically Amplified Resist
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Prof. Jin-Heong Yim
Requirements of 193-nm Photoresists
1. Transparency at 193 nm (Transmittance > 0.6 / µm)
2. Good Dry-Etching Resistance
- Pattern formation with high aspect ratio (~ Novolac resist)
3. High Thermal Stability
- Stable to temperature in process environments(Td > 150°C, Tg > 100°C)
4. Good Adhesion to Substrate
5. High Sensitivity
- Dose < 20 mJ/cm2
6. Compatibility with Conventional Developer (0.262 N TMAH)
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Prof. Jin-Heong Yim
Synthesis of Synthesis of photoresistsphotoresists materials that havematerials that have
- Good mechanical and thermal properties
- High transparency at 193 nm wavelength
- Good etch resistance
- Capability of resolving sub-0.25µm feature size
Target Point
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Prof. Jin-Heong Yim
Conventional resists are unsuitable for 193 nm
imaging due to their opacity at this wavelength.
Challenges :
193 nm Resist Materials
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Prof. Jin-Heong Yim
OH
n
PHS(Poly(hydroxystyrene))
CO2CH3
n
PMMA(Poly(methylmethacrylate))
Rai-Choudhury, P. Handbook of Microlithography, Micromachining, and Microfabrication, Vol.1, SPIE Engineering Press,1997
Comparison of Absorption Spectra(PHS vs. PMMA)
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Prof. Jin-Heong Yim
Etch resistance has been empirically linked to a highcarbon/hydrogen ratio, but aromatics are precludedbecause of their absorption at this wavelength.
Gokan, H.; Esho, S.; Ohnishi, Y. J. Electrochem. Soc. 1983, 130, 143
Challenges :
Etch RateNtotal
Ncarbon- Noxygen∝
193 nm Resist Materials
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Prof. Jin-Heong Yim
Ohnishi et.al. J.Electrochem. Soc.: Solid-State Sci. Technol., 130, 143 (1983)
n
PS(Polystyrene)
CO2CH3
n
PMMA(Poly(methylmethacrylate))
Dry Etch Resistance of Organic Materials
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Prof. Jin-Heong Yim
“Optical Transparency”
&
“Etch Resistance”
How Do it can be Achieve ?
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Prof. Jin-Heong Yim
Structure:
Formula:
C/H:
• Etch rate is inversely proportional to the carbon to hydrogen ratio of the polymer.
• This observation leads to polymers containingaromatic or cyclic structures.
The Need for Polymers with High C:H Ratios
C6H6 C 12H16 C 7H10 C nH2n+2
CH3(CH2)nCH3
1 0.75 0.7 0.25
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Prof. Jin-Heong Yim
Tethering Function, Etch Resistance, Mechanical & Thermal Properties
Acid Lability Base Solubility
OO
OO CC
RH
Typical Design Example
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Prof. Jin-Heong Yim
* No aromatic groups High transparency at 193 nm
* High Carbon/Hydrogen ratio Good etch resistance
R
How About Alicyclic Compounds ?
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Prof. Jin-Heong Yim
(30%)(70%)exoendo
H
H
+ R∆
Cyclopentadiene Acrylate
Diels-Alder+
R
R
CyclopentadieneDicyclopentadiene
∆ 2
Monomer Synthesis
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Prof. Jin-Heong Yim
Diels-Alder Reaction
CH2
HC
HC
CH2
CH2
CH2
+
H2C
HC
HCCH2
CH2
CH2
1,3-butadiene ethylene cyclohexene
New pi bond
New sigma bond
New sigma bond
33개의개의 pi pi 결합이결합이 22개의개의 sigma sigma 결합과결합과 11개의개의 pi pi 결합으로결합으로 전환되었다전환되었다!!!!!!
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Prof. Jin-Heong Yim
.R
R
RR
(
) nRadical Polymer
ROMP
K2IrCl6
RHydrogenation
n
Addition Polymer
Pd(CH3CN)4(BF4)2
n
R
n
or
n
R
Pathways to Polymerization
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Prof. Jin-Heong Yim
* Advantages - High Thermal Stability- Excellent Storage Stability
* Disadvantages- Metal Contamination- Low Yield
Addition Polymerization
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Prof. Jin-Heong Yim
* Chain Polymerization Mechanism* Driving Force is Release of Ring Strain
M R
M R
M R
( M = R' )
OO
O OOHO
x y zH2N2
OO
O OH O O
x y
* Example *
ROMP (Ring Opening Metathesis Polymerization)
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Prof. Jin-Heong Yim
* Advantages- Good transparency at 193nm- High yield and controllable MW
* Disadvantages- Synthetic cost- Phase separation with common PAGs- Very dilute developer concentration- Adhesion problem limit resolution
Lithographic Performance of ROMP Polymers
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Prof. Jin-Heong Yim
Monomer preparation :
Polymerization :
HH
+CO 2
CO 2
Diels-Alder
+CO 2 CO 2
Diels-Alder
t-Butylnorbornene-5-carboxylate (BNC)
Norbornene carboxylicacid (NCA)
o
y
or
x COOHCOOButy
xCOOBut COOH
+ 140 C+
COOBut COOH
O O6h
Radical Copolymerization
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Prof. Jin-Heong Yim
<Problem>- Poor etch resistance
BNCBNC--MA copolymerMA copolymer
o/OO O
OO
+ AIBNTHF 70 C
OO
OO O
n
BNC Maleic anhydride
: 80% yield (Mn 3000)6h/
- Increasing polarity with MA to improve adhesion
Improving Adhesion
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Prof. Jin-Heong Yim
DBNCDBNC--MA copolymerMA copolymer
/ oOO O
+ AIBNTHF 70 C
OO O
OO
OO
n/ 6h
DBNC Maleic anhydride
: 40% yield (Mn 3000)
- Enhancing etch resistance
Improving Etch Resistance
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Prof. Jin-Heong Yim
Takechi, S. Takahashi, M.; Kotachi, A.; Nozaki, K.;Yano, E.; Hanyu, I.; J. Photopolym. Sci. Technol., 1996, 9(3), 475.
DBNC-alt-MAcopolymer
BNC-alt-MA copolymer
APEX-E
Rate (A/min) 453 633 603
Relative Rate 0.76 1.05 1.00
yx
O
O
O OH
n
OO O
OO
OO
OO O
n
DBNC-alt-MA BNC-alt-MA APEX-E
Result (etch data)
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Prof. Jin-Heong Yim
80nm Lines90nm Lines100nm Lines
!!!!!!
Result (SEM)
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Prof. Jin-Heong Yim
1. Addition Polymers- thermal and storage stability- metal contamination and low yield
2. ROMP Polymers- excellent transparency and storage stability- capable of resolving 0.25µm features- require non-standard developer
3. Radical Polymers- alternating copolymers- capable of resolving 80 nm features- exhibit etch resistance higher than conventional resists
Mid-Summary
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Prof. Jin-Heong Yim
Chemically Amplified Resists for F2 Excimer laser Lithography
Resolution : < 70 nm
Absorbance : < 2.0 /µm
Sensitivity : < 30 mJ/cm2
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Prof. Jin-Heong Yim
157 nm Photoresist
Solid state absorbance of photons in the 130 to 180 nm range (approximately 7 to 10 eV) is still dominated by valence band electronic transitions.
Many “common” chemical bonds are sufficiently absorptive to lead to efficient exicitationof the polymer matrix.
The 157 nm absorption is dominated by C(2p) electrons, whose absorption band edge is
very close to 157 nm, and whose transition probability can be dramatically affected by the
chemical bonding environment.
C-F bonds are transparent at 157 nm !
Problem of the Transparency
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Prof. Jin-Heong Yim
Photon absorption Characteristics of several ground state electrons
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Prof. Jin-Heong Yim
Absorption Coefficients at 157nm
Polymer A(㎛-1)
L(OD=0.4) (nm)
Si- O BACKBONEPoly(hydrosilsesquioxane)
Poly(dimethylsiloxane)Poly(phenylsiloxane)
CARBON BACKBONEFluorocarbon, 100% fluorinated
Hydrofluorocarbon, 30% fluorinatedPartially esterified hyrofluorocarbon, 28%fluorinated
Poly(vinyl alcohol) (99.7%)Fully esterified hydrocarbon, 31% fluorinated
Ethyl cellulosePoly(methylmethacrylate)
PolynorbornenePolystyrene
Poly(vinyl phenol)Poly(norbornylmethacrylate)Poly(adamantylmethacrylate)V1.0 acrylic terpolymer resin
Poly(chlorostyrene)Poly(acrylic acid)
0.061.612.68
0.701.342.604.164. 565.035.696.106.206.256.676.738.20
10.1511.00
6667248149
571298154968880706664646059493936
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Prof. Jin-Heong Yim
Backbone of the 157 nm Photoresist
Hydrofluorocarbon FunctionalizedSiloxane/Silsesquioxane
R
Fx
x
Si O
R
O
Si
R
O
n
Si O
R1
R2 n
CF2 CF2
x
y
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Prof. Jin-Heong Yim
Problems of Materials
Hydrofluorocarbon Materials
Siloxane/ Silsesquioxane Materials
• Difficulty with regard to aqueous base solubility• Reduction of adhesion• Difficulty of synthesis
Incorporation of fluorine into a resist must be done only in limited fashion
• Low Tg of siloxane• Solubility of silsesquioxane
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Prof. Jin-Heong Yim
Etch Resistance
OHF F
R
Fx
x
CF2 CF2
x
y
Aromatic compound
Alicyclic compound
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Prof. Jin-Heong Yim
Protecting Group
CF3O
CF3
O
CF3OH
CF3
H+
O
O
OH
O
OH
O O
O
H+ H+
248 nm 193 nm 157 nm
pKa= 10 pKa= 5 pKa= 11
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Prof. Jin-Heong Yim
Balancing photoresist properties at 157 nm
Base Solubility
Transparency
Transparency
Etch, Tg
Base Solubility
Etch, Tg
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Prof. Jin-Heong Yim
Approach to Design of Photoresist polymer
Backbone Etch Resistance
DeveloperSolubility
ProtectingGroup
Transparency
Patterson, Proc, SPIE 3999, 365 (2000)
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Prof. Jin-Heong Yim
Siloxanes
(Tg~ 90℃)
Fluorinated, high Tg polysiloxane
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Prof. Jin-Heong Yim
Silsesquioxanes
Silsesquioxanes from commercially available hydridosilsesquioxane
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Prof. Jin-Heong Yim
Silsesquioxanes
Dinorbornyl silsesquioxanes
A silsesquioxane copolymer (for better adhesion, higher Tg)
A silsesquioxane from protected allylhexafluoroalcohol
Synthesis of an acid-labile, transparent silsesquioxane
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Prof. Jin-Heong Yim
SilsesquioxanesIncorporation of polyhedral oligosilsesquioxane (POSS) in chemically amplified resists to improve their reactive ion etching resistance
- Hengpeng Wu, M. J. Yacaman, J. Vac. Sci. Technol. B 19(3), 2001, 851-855
Fig. SEM micrograph of polymers: Dose: 5 µC/cm2 ; feature dimension: 240 nm
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Prof. Jin-Heong Yim
Hydrofluorocarbon Resist
THP-protected poly(vinyl alcohol-co-α-trifluoromethyl vinyl alcohol): 0.55 µm pattern (m/n = 55/45): max. 70% protection with ATPB (cat.) instead of PTSA
Schmaljohann, Proc, SPIE 3999, 330 (2000)
O
OF3C
O
O
m n