div class=ts-pagebutton class=gotoPage data-page=1Page 1button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=1 data-page=1 class=ts-thumb lazyload alt=Page 1: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails1jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=2Page 2button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=2 data-page=2 class=ts-thumb lazyload alt=Page 2: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails2jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=3Page 3button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=3 data-page=3 class=ts-thumb lazyload alt=Page 3: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails3jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=4Page 4button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=4 data-page=4 class=ts-thumb lazyload alt=Page 4: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails4jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=5Page 5button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=5 data-page=5 class=ts-thumb lazyload alt=Page 5: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails5jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=6Page 6button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=6 data-page=6 class=ts-thumb lazyload alt=Page 6: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails6jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=7Page 7button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=7 data-page=7 class=ts-thumb lazyload alt=Page 7: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails7jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=8Page 8button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=8 data-page=8 class=ts-thumb lazyload alt=Page 8: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails8jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=9Page 9button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=9 data-page=9 class=ts-thumb lazyload alt=Page 9: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails9jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=10Page 10button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=10 data-page=10 class=ts-thumb lazyload alt=Page 10: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails10jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=11Page 11button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=11 data-page=11 class=ts-thumb lazyload alt=Page 11: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails11jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=12Page 12button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=12 data-page=12 class=ts-thumb lazyload alt=Page 12: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails12jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=13Page 13button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=13 data-page=13 class=ts-thumb lazyload alt=Page 13: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails13jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=14Page 14button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=14 data-page=14 class=ts-thumb lazyload alt=Page 14: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails14jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=15Page 15button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=15 data-page=15 class=ts-thumb lazyload alt=Page 15: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails15jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=16Page 16button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=16 data-page=16 class=ts-thumb lazyload alt=Page 16: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails16jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=17Page 17button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=17 data-page=17 class=ts-thumb lazyload alt=Page 17: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails17jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=18Page 18button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=18 data-page=18 class=ts-thumb lazyload alt=Page 18: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails18jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=19Page 19button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=19 data-page=19 class=ts-thumb lazyload alt=Page 19: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails19jpg width=140 height=200 divdivdiv class=ts-pagebutton class=gotoPage data-page=20Page 20button div class=ts-imageimg data-url=fuzpcoursepapertechnology-and-si-and-si02-etch-rates-of-500a1000-minhtmlpage=20 data-page=20 class=ts-thumb lazyload alt=Page 20: USTCstaffustceducn~fuzpcoursepaperTechnology andSi and Si02 etch rates of 500—1000 Åmin are achieved with CI and F containing gases with beams of typically 1000 ev and loading=lazy src=data:imagegifbase64iVBORw0KGgoAAAANSUhEUgAAAAIAAAACCAQAAADYv8WvAAAAD0lEQVR42mP8X8AwAgiABKBAv+vAXklAAAAAElFTkSuQmCC data-src=https:reader036vdocumentsnetreader036viewer202207140360f76d5de08bff7ddb2d8a4bhtml5thumbnails20jpg width=140 height=200 divdiv
