gan, a1n, inn and related...

GaN, A1N, InN andRelated Materials

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Cambridge University Press978-1-107-40886-9 - Materials Research Society Symposium Proceedings: Volume 892:GaN, AIN, InN and Related MaterialsEditors: Martin Kuball, Thomas H. Myers, Joan M. Redwing and Takashi MukaiFrontmatterMore information

http://www.cambridge.org/9781107408869

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 892

GaN, AIN, InN andRelated Materials

Symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.

EDITORS:

Martin KuballUniversity of Bristol

Bristol, United Kingdom

Thomas H. MyersWest Virginia University

Morgantown, West Virginia, U.S.A.

Joan M. RedwingThe Pennsylvania State University

University Park, Pennsylvania, U.S.A.

Takashi MukaiNichia CorporationTokushima, Japan

IMIRIS1Materials Research Society

Warrendale, Pennsylvania






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CONTENTS

Preface xxv

Materials Research Society Symposium Proceedings xxvi

UVAND WHITE LIGHT LEDs

* Deep Ultraviolet Light Emitting Diodes With EmissionBelow 300 nm 3

M.AsifKhan

Short-Period AlGaN Based Superlattices for Deep UVLight Emitting Diodes Grown By Gas Source MolecularBeam Epitaxy 13

S.A. Nikishin, B.A. Borisov, V.V. Kuryatkov, M. Holtz,and H. Temkin

Towards a Novel Broadband Spectrally Dynamic SolidState Light Source 19

David B. Nicol, Shalini Gupta, Nola Li, Ali Asghar,Elton Graugnard, Christopher Summers, andIan T. Ferguson

VPE: GaN

Stress and Microstructure Evolution in CompositionallyGraded Al^GaJV Buffer Layers for GaN Growth on Si 27

Xiaojun Weng, Srinivasan Raghavan, Elizabeth C. Dickey,and Joan M. Redwing

DOPANTS AND DEFECTS

X-ray Standing Wave Investigations of Si DopantIncorporation in GaN 35

M. Siebert, Th. Schmidt, J.I. Flege, J. Zegenhagen,T.-L. Lee, S. Figge, D. Hommel, and J. Falta

*Invited Paper






MBE: GaN

The Use of Cathodoluminescence During MolecularBeam Epitaxy Growth of Gallium Nitride to DetermineSubstrate Temperature 43

Kyoungnae Lee, Eric D. Schires, and Thomas H. Myers

Scanning Tunneling Microscopy Study of Cr-DopedGaN Surface Grown by RF Plasma Molecular BeamEpitaxy 49

Muhammad Baseer Haider, Rong Yang,Hamad Al-Brithen, Costel Constantin,Arthur R. Smith, Gabriel Caruntu, andCharles J. O'Connor

In Situ Investigation of Surface Stoichiometry DuringInGaN and GaN Growth by Plasma-Assisted MolecularBeam Epitaxy Using RHEED-TRAXS 55

Randy P. Tompkins, Brenda L. VanMil, Eric D. Schires,Kyoungnae Lee, Yewhee Chye, David Lederman, andThomas H. Myers

ELECTRONIC DEVICES I

High Power AlGaN/GaN Schottky Barrier Diode With1000 V Operation 63

Seikoh Yoshida, Nariaki Ikeda, Jiang Li, Takahiro Wada,Hiroshi Kambayashi, and Hironari Takehara

Effects of the High-Refractive Index SiNx Passivation onAlGaN/GaN HFETs With a Very Low Gate-LeakageCurrent 69

Hiroshi Kambayashi, Takahiro Wada, Nariaki Ikeda,and Seikoh Yoshida

InN

Properties of InN Grown by High-Pressure CVD 77Mustafa Alevli, Goksel Durkaya, Vincent Woods,Ute Haboeck, Hun Kang, Jayantha Senawiratne,Martin Strassburg, Ian T. Ferguson, Axel Hoffmann,and Nikolaus Dietz

VI






Polarity Dependence of In-Rich InGaN and InN/InGaNMQWs 83

Song-Bek Che, Takuro Shinada, Tomoyasu Mizuno,Yoshihiro Ishitani, and Akihiko Yoshikawa

Influence of Nitrogen Species on InN Grown by PAMBE 89P.A. Anderson, RJ. Kinsey, C.E. Kendrick, I. Farrell,D. Carder, RJ. Reeves, and S.M. Durbin

Carrier Recombination, Relaxation, and TransportDynamics in InN 95

Fei Chen, Alexander N. Cartwright, Hai Lu, andWilliam J. Schaff

Electron Transport Properties of InN 105Rebecca E. Jones, Henricus C. M. van Genuchten,Sonny X. Li, Leon Hsu, Kin Man Yu, Wladek Walukiewicz,Joel W. Ager III, Eugene E. Haller, Hai Lu, andWilliam J. Schaff

JOINT SESSION:NITRIDE MATERIALS FOR DEVICES

* III-V Epitaxial Growth for Nitride Devices 113Russell Dupuis, Theodore Chung, Wonseok Lee,Peng Li, Jae Limb, Jae-Hyun Ryou, andDongwon Yoo

Structural, Optical, and Magnetic Behavior of In SituDoped, MOCVD-Grown GarJMnJV Epilayers andHeterostructures 125

Matthew H. Kane, William E. Fenwick, Martin Strassburg,Ali Asghar, Shalini Gupta, Hun Kang, Nola Li,Christopher J. Summers, and Ian T. Ferguson

Fe-Centers in GaN as Candidates for SpintronicsApplications 131

Enno Malguth, Axel Hoffmann, Matthew Phillips,and Wolfgang Gehlhoff

*Invited Paper

vn






Characterization of a-Plane AlGaN/GaN HeterostructureGrown on r-Plane Sapphire Substrate 137

Motoaki Iwaya, Yoshizane Okadome, Yosuke Tsuchiya,Daisuke Iida, Aya Miura, Hiroko Furukawa, Akira Honshio,Yasuto Miyake, Satoshi Kamiyama, Hiroshi Amano, andIsamu Akasaki

Growth and Characterization of Semipolar InGaN/GaNMultiple Quantum Wells and Light-Emitting Diodes on(10-1-1) GaN Templates 143

Arpan Chakraborty, T. Onuma, T.J. Baker, S. Keller,S.F. Chichibu, S.P. DenBaars, S. Nakamura, J.S. Speck,and U.K. Mishra

POSTER SESSION:InN

InN Nano Rods and Epitaxial Layers Grown by HVPE onSapphire Substrates and GaN, AlGaN, A1N Templates 151

Alexander Syrkin, Alexander Usikov, Vitali Soukhoveev,Oleg Kovalenkov, Vladimir Ivantsov, Vladimir Dmitriev,Charles Collins, Eric Readinger, Natalia Shmidt,Sergey Nikishin, Vladimir Kuryatkov, Daoying Song,and Mark Holtz

Modification of InN Properties by Interactions WithHydrogen and Nitrogen 155

Maria Losurdo, Maria Michela Giangregorio,Giovanni Bruno, Tong-Ho Kim, Pae Wu, Soojeong Choi,Mike Morse, April Brown, Francesco Masia,Antonio Polimeni, and Mario Capizzi

Temperature Dependence of Transport Properties ofInN Films 161

J.S. Thakur, R. Naik, V.M. Naik, D. Haddad,G.W. Auner, H. Lu, and W.J. Schaff

vin






POSTER SESSION:UVLED

Reliability and Degradation Modes of 280 nm Deep UVLEDs on Sapphire 169

Zheng Gong, Sameer Chhajed, Mikhail E. Gaevski,Wenhong H. Sun, Vinod Adivarahan, Maxim Shatalov,and M. Asif Khan

Origins of Parasitic Emissions from 353 nm AlGaN-BasedUV LEDs Over SiC Substrates 175

Ji-Soo Park, Daryl W. Fothergill, Patrick Wellenius,Seann M. Bishop, John F. Muth, and Robert F. Davis

Comparison of the Electroluminescence of Blue andDeep-UV Light-Emitting Diodes at Elevated Temperatures 181

Xian-An Cao, T. Stecher, and S.F. LeBoeuf

Analysis of High-Power Packages for White-Light-Emitting Diode Lamps With Remote Phosphor 187

Hong Luo, Jong Kyu Kim, Yangang Xi,E. Fred Schubert, Jaehee Cho, Cheolsoo Sone,and Yongjo Park

POSTER SESSION:ELECTRICAL TRANSPORT

Al Mole Fraction Dependence of Deep Levels inAlGaN/GaN-HEMT Structures Estimated by CVProfiling 195

Junjiroh Kikawa, Katsuhiro Imada, Tomoyuki Yamada,Tadayoshi Tsuchiya, Yuichi Hiroyama, Masayuki Iwami,Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi

POSTER SESSION:NANO

Epitaxal Growth of InGaN Quantum Dots Grown byMOVPE: Effect of Capping Process on the Structuraland Optical Properties 203

Tomohiro Yamaguchi, Kathrin Sebald,Jiirgen Gutowski, Stephan Figge, and Detlef Hommel

IX






The Mean Inner Potential of GaN Measured FromNanowires Using Off-Axis Electron Holography 209

Andrew See Weng Wong, Ghim Wei Ho,Rafal Dunin-Borkowski, Takeshi Kasama,Rachel A. Oliver, Pedro M.F.J. Costa, andColin John Humphreys

Raman Scattering of Self-Assembled Gallium NitrideNanorods Synthesized by Plasma-Assisted MolecularBeam Epitaxy 215

D. Wang, C.-C. Tin, J. R. Williams, M. Park, Y.S. Park,C. M. Park, T.W. Kang, and W.-C. Yang

A Non-Thermal Plasma Reactor for the Synthesis ofGallium Nitride Nanocrystals 221

Rebecca Joy Anthony, Elijah Thimsen, Joe Johnson,Stephen A. Campbell, and Uwe Kortshagen

Opto-Electronic Simulation of GaN Nanowire Lasers 225Liang Chen and Elias Towe

Morphological Study of InN Films and Nanorods GrownbyH-MOVPE 231

Hyun Jong Park, Sang Won Kang, Olga Kryliouk, andTim Anderson

POSTER SESSION:VISIBLE LED

Analysis of the Quantum Efficiency of GalnN/GaN LightEmitting Diodes in the Range of 390-580 nm 239

Wei Zhao, Yufeng Li, Yong Xia, Mingwei Zhu,Theeradetch Detchprohm, E. Fred Schubert, andChristian Wetzel

Visible Light-Emitting Diodes Grown by Plasma AssistedMolecular Beam Epitaxy on Hydride Vapor-Phase EpitaxyGaN Templates and the Development of Dichromatic(Phosphorless) White LEDs 245

Jasper S. Cabalu, Adrian D. Williams, Tai-Chou P. Chen,Ryan France, and Theodore D. Moustakas






Electrical Characterization of Blue Light Emitting Diodesas a Function of Temperature 251

Madhu Murthy, Alphonse Marie Kamto Tegueu,Michael A. Awaah, Dake Wang, Minseo Park,Frederick J. Walker, and Das Kalyan Kumar

Study of Laser-Debonded GaN Light Emitting Diodes 257C.P. Chan, T.M. Yue, C. Surya, A.M.C. Ng,A.B. Djurisic, C.K. Liu, and M. Li

Role of Deep Levels in DC Current Aging of GaN/InGaNLight-Emitting Diodes Studied by Capacitance and PhotocurrentSpectroscopy 263

Antonio Castaldini, Anna Cavallini, Lorenzo Rigutti,Matteo Meneghini, Simone Levada, Gaudenzio Meneghesso,Enrico Zanoni, Volker Harle, Thomas Zahner, andUlrich Zehnder

3D Simulations on Realistic GaN-Based Light-EmittingDiodes 269

Simon Li, Z.Q. Li, O. Shmatov, C.S. Xia, and W. Lu

POSTER SESSION:SENSOR/DETECTOR/ELECTRONIC DEVICES

Application of Aluminum Nitride Thin Film forMicromachined Ultrasonic Transducers 277

Qianghua Wang, Jianzeng Xu, Changhe Huang,and Gregory W. Auner

Mechanism of Current Leakage in Ni Schottky Diodeson Cubic GaN and AlxGa!_xN Epilayers 283

Donat J. As, Stefan Potthast, Jara Fernandez,Klaus Lischka, Hiroyuki Nagasawa, andMasayuki Abe

Simulation of Self-Heating and Temperature Effect inGaN-Based Metal-Semiconductor Field-Effect Transistor 289

Valentin D. Turin and Alexander A. Balandin

XI






Double-Ion-Implanted GaN MESFETs With ExtremelyLow Source/Drain Resistance 295

Kazuki Nomoto, Nobuyuki Ito, Taku Tajima,Takeshi Kasai, Tomoyoshi Mishima, Taroh Inada,Masataka Satoh, and Tohru Nakamura

Electrical Domains and Sub-Millimeter Signal Generationin AlGaN/GaN Superlattices 301

Irina Gordion, Alexander Manasson, andVladimir I. Litvinov

Growth, Processing and Characterization of GaN/AlGaN/SiCVertical n-p Diodes 307

Steven Boeykens, Maarten Leys, Marianne Germain,Jef Poortmans, Benny Van Daele, Staf Van Tendeloo,Ronnie Belmans, and Gustaaf Borghs

Fabrication and Device Characteristics of BulkGaN-Based Schottky Diodes 313

Yi Zhou, Dake Wang, Claude Ahyi, Chin-Che Tin,John Williams, Minseo Park, N. Mark Williams, and

Andrew Hanser

Reduction of Base Access Resistance in AlGaN/GaNHeteroj unction Bipolar Transistors Using GalnN BaseCap Layer and Selective Epitaxial Growth 319

Jay M. Shah, Thomas Gessmann, Hong Luo, Yangang Xi,Kaixuan Chen, Jong Kyu Kim, and E. Fred Schubert

Design and Development of MBE Grown AlGaN/GaNHEMT Devices on SiC Substrates for RF Applications 325

Ashok K. Sood, Rajwinder Singh, Yash R. Puri,Frederick W. Clarke, Amir Dabiran, Peter Chow,Jie Deng, and James CM. Hwang

POSTER SESSION:CONTACTS/PROCESSING

Fabrication and Electrical Characteristics of Ti/Al OhmicContact to Si+ Implanted GaN 337

Nobuyuki Ito, Akira Suzuki, Mitsunori Kawamura,Kazuki Nomoto, Takeshi Kasai, Tomoyoshi Mishima,Taroh Inada, Tohru Nakamura, and Masataka Satoh

xn






W2B Based High Thermal Stability Ohmic Contacts ton-GaN. 341

Rohit Khanna, S.J. Pearton, C.J. Kao, I. Kravchenko,F. Ren, G.C. Chi, A. Dabiran, and A. Osinsky

Anti-Diffusion Barriers for Gold-Based Metallization to p-GaN 351Anna Piotrowska, Eliana Kaminska, Marek Guziewicz,Elzbieta Dynowska, Anna Stonert, Andrzej Turos,Stephan Figge, Roland Kroger, and Detlef Hommel

Substrate Influence on the High-Temperature AnnealingBehavior of GaN: Si vs. Sapphire 357

David Pastor, Ramon Cusco, Luis Artus, Enrique Iborra,Juan Jimenez, Francisca Peiro, German Gonzalez-Diaz,and Enrique Calleja

Planarization of GaN by the Etch-Back Method 363Adrian D. Williams and T.D. Moustakas

GaN-Based Light Emitting Diode With TransparentNanoparticles-Embedded p-Ohmic Electrode 369

June O. Song, Hun Kang, David Nicol, Ian T. Ferguson,Hyun-Gi Hong, and Tae-Yeon Seong

ELECTRONIC DEVICES II

Ill-Nitride Epitaxial Material on Large-Diameter Semi-Insulating SiC Substrates for High-Power RF Transistors 377

Adam W. Saxler, Edward L. Hutchins, Jason Jenny, andAustin Blew

Normally Off-Mode AlGaN/GaN Heterostructure FieldEffect Transistor Using p-Type Gate Contact 383

Norio Tsuyukuchi, Kentaro Nagamatsu,Yoshikazu Hirose, Motoaki Iwaya,Satoshi Kamiyama, Hiroshi Amano, andIsamu Akasaki

Flip-Chip Mounting for Improved Thermal Managementof AlGaN/GaN HFETs 389

Hangfeng Ji, Andrei Sarua, Martin Kuball, Jo Das,Wouter Ruythooren, Marianne Germain, andGustaafBorghs

xin






CONTACTS TO HEMTs

Low-Temperature Selected Area Re-Growth of OhmicContacts for III-N FETs 397

Yoganand N. Saripalli, Chang Zeng, Yawei Jin,Joseph P. Long, Judith A. Grenko, Krishnanshu Dandu,Mark A.L. Johnson, and Doug W. Barlage

ELECTRICAL/TRANSPORT PROPERTIES

Perturbation of Charges in AlGaN/GaN HeterostructuresStudied by Nanoscale Capacitance-Voltage Technique 405

Goutam Koley and Lakshminarayanan Lakshmanan

Weak Antilocalization in Polarization-Doped AlGaN/GaNHeterostructures 411

Nicolas Henri Thillosen, Thomas Schapers,Nicoleta Kaluza, Hilde Hardtdegen, andVitaliy Guzenko

Polarization-Induced 3-Dimensional Electron Slabs inGraded AlGaN Layers 417

John Simon, Kejia (Albert) Wang, Huili Xing,Debdeep Jena, and Siddharth Rajan

Highly Doped p-Type a-Plane GaN Grown on r-PlaneSapphire Substrate 423

Yosuke Tsuchiya, Yoshizane Okadome,Hiroko Furukawa, Akira Honshio, Yasuto Miyake,Takeshi Kawashima, Motoaki Iwaya,Satoshi Kamiyama, Hiroshi Amano, andIsamu Akasaki

JOINT SESSION:ZINC OXIDE MATERIALS AND

DEVICES INCLUDING ALLOYS II

* ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures forUV and Visible Light Emitters 429

A.V. Osinsky, Jianwei W. Dong, J.Q. Xie, B. Hertog,A.M. Dabiran, P.P. Chow, S.J. Pearton, D.P. Norton,D.C. Look, W. Schoenfeld, O. Lopatiuk, L. Chernyak,M. Cheung, A.N. Cartwright, and M. Gerhold

xiv






MgZnO Nanocrystallites: Photoluminescence and PhononProperties 439

John L. Morrison, Xiang-Bai Chen, Jesse Huso,Heather Hoeck, James Mitchell, Leah Bergman,and Tsvetanka Zheleva

Plasma-Assisted MOCVD Growth of ZnO Thin Films 445Maria Losurdo, Maria Michela Giangregorio,Pio Capezzuto, Giovanni Bruno, Graziella Malandrino,Manuela Blandino, and Ignazio Fragala

Metal Organic Chemical Vapor Deposition of ZnO 451William E. Fenwick, Vincent T. Woods, Ming Pan,Nola Li, Matthew H. Kane, Shalini Gupta,Varatharajan Rengarajan, Jeff Nause, andIan T. Ferguson

Characteristics of a Phosphorus-Doped p-Type ZnO FilmbyMBE 457

Faxian X. Xiu, Zheng Yang, Mandalapu J. Leelaprasanna,and Jianlin L. Liu

VISIBLE LED + LD

A Semipolar (10-1-3) InGaN/GaN Green Light EmittingDiode 465

Rajat Sharma, P. Morgan Pattison, Troy J. Baker,Benjamin A. Haskell, Robert M. Farrell, Hisashi Masui,Feng Wu, Steven P. DenBaars, James S. Speck, andShuji Nakamura

Charge Profiling of the p-AlGaN Electron Blocking Layerin AlGalnN Light Emitting Diode Structures 471

Yong Xia, Yufeng Li, Wei Zhao, Mingwei Zhu,Theeradetch Detchprohm, E. Fred Schubert, andChristian Wetzel

OPTICAL PROPERTIES

Time-Resolved Spectroscopy of Excitons Bound at ShallowNeutral Donors in HVPE GaN 479

Bo Monemar, P.P. Paskov, J.P. Bergman, T. Malinauskas,K. Jarasiunas, A.A. Toropov, T.V. Shubina, and A. Usui

xv






Room Temperature Strong Coupling in Low Finesse GaNMicrocavities 485

Ian R. Sellers, Fabrice Semond, Mathieu Leroux,Jean Massies, Pierre Disseix, Guillaume Malpuech,A.-L. Henneghien, Joel Leymarie, and A. Vassan

Optical Properties of GaN Photonic Crystal MembraneNanocavities at Blue Wavelengths 491

Yong Seok Choi, Cedrik Meier, Raj at Sharma,Kevin Hennessy, Elaine D. Haberer, Shuji Nakamura,and Evelyn L. Hu

BULK + HVPE

Growth of Large A1N Single Crystals Along the [0001]Direction 499

Ziad Georges Herro, Dejin Zhuang, Raoul Schlesser,Ramon Collazo, and Zlatko Sitar

Oxidation of Aluminum Nitride for Defect Characterization 505James H. Edgar, Z. Gu, K. Taggart, J. Chaudhuri,L. Nyakiti, R.G. Lee, and R. Witt

High Quality GaN Layers Grown on Slightly MiscutSapphire Wafers 511

Peter Bruckner, Martin Feneberg, Klaus Thonke,Frank Habel, and Ferdinand Scholz

STRUCTURAL

* Structural Analysis of ELO-GaN Grown on SapphireUsing the X-ray Micro-Beam of an 8-GeV Storage Ring 519

Takao Miyajima, Shingo Takeda, Hideaki Kurihara,Kyoko Watanabe, Madomi Kato, Nobuhide Hara,Yoshiyuki Tsusaka, Junji Matsui, Yoshihiro Kudo,Shigetaka Tomiya, Shu Goto, Masao Ikeda, andHironobu Narui

Intersecting Basal Plane and Prismatic Stacking FaultStructures in GaN/AIN Epilayers on On-Axis andOff-Cut 6H-SiC Substrates 531

J. Bai, X. Huang, and Michael Dudley

xvi






Dislocation Reduction and Structural Properties of GaNLayers Grown on N+-Implanted AIN/Si (111) Substrates 537

Muhammad Jamil, James R. Grandusky, Vibhu Jindal,Neeraj Tripathi, and Fatemeh Shahedipour Sandvik

Oxygen Segregation to Nanopipes in Gallium Nitride 543Michael E. Hawkridge and David Cherns

POSTER SESSION:OPTICAL PROPERTIES

Polarized Photoluminescence Study on AlGaN of AlGaN/GaNHeterostructure 551

Sachio Kitagawa, Kenichi Kosaka, Tadayoshi Tsuchiya,Akira Suzuki, Tsutomu Araki, and Yasushi Nanishi

Structural and Optical Properties of MOCVD InA1NEpi layers 557

S. Hernandez, K. Wang, D. Amabile, E. Nogales,D. Pastor, R. Cusco, L. Artus, R.W. Martin,K.P. O'Donnell, I.M. Watson, and RENiBEl Network

Surface Recombination and Vacuum/GaN/AlGaN SurfaceQuantum Wells 563

Xiyao Zhang, Ian Patrick Wellenius, Ailing Cai,John F. Muth, John Roberts, Pradeep Rajagopal,Jim Cook, Eddie Piner, and Kevin Linthicum

Cu Induced Optical Transitions in MOCVD Grown CuDoped GaN 569

Jayantha Senawiratne, Martin Strassburg, Adam Payne,Ali Asghar, William Fenwick, Nola Li, Ian Ferguson,and Nikolaus Dietz

Effects of GaN Passivation With SiO2 and SiNx Studied byPhotoluminescence and Surface Potential Electric ForceMicroscopy 575

S. Chevtchenko, M.A. Reshchikov, K. Zhu, Y.-T. Moon,A.A. Baski, and H. Morko9

Refractive Indices of A-Plane GaN Thin Films on R-PlaneSapphire 581

Ailing Cai, Ian Patrick Wellenius, Mike Gerhold,John F. Muth, Andrei Osinsky, J.Q. Xie, andJ.W. Dong

xvu






High Quantum Efficiency of Photoluminescence in GaNandZnO 587

Michael A. Reshchikov, Xing Gu, Bill Nemeth,Jeff Nause, and Hadis Morko£

Photoluminescence in Wurtzite GaN Containing Carbon 593Michael A. Reshchikov, Random H. Patillo, andKathleen C. Travis

Characterization of the Blue Emission of Tm/ErCo-Implanted GaN 599

Iman S. Roqan, Carol Trager-Cowan, Ben Hourahine,Katharina Lorenz, Emilio Nogales, Kevin P. O'Donnell,Robert W. Martin, Eduardo Alves, S. Ruffenach, andOlivier Briot

Correlation Between Resistivity and Yellow LuminescenceIntensity of GaN Layers Grown by MOCVD 605

Akihiro Hinoki, Yuichi Hiroyama, Tadayoshi Tsuchiya,Tomoyuki Yamada, Masayuki Iwami, Katsuhiro Imada,Junjiroh Kikawa, Tsutomu Araki, Akira Suzuki, andYasushi Nanishi

Influence of the Annealing Ambient on Structural andOptical Properties of Rare Earth Implanted GaN 611

K. Lorenz, E. Nogales, R. Nedelec, J. Penner,R. Vianden, E. Alves, R.W. Martin, andK.P. O'Donnell

POSTER SESSION:DOPANTS/DEFECTS

Donor-Like Deep Level Defects in GaN Characterized byDouble-Correlation Deep Level Transient Spectroscopy 619

Mo Ahoujja, M. Hogsed, Y.K. Yeo, and R.L. Hengehold

A Microspectroscopic Study of Cap Damage in AnnealedRE-Doped AIN-Capped GaN 625

E. Nogales, K. Lorenz, K. Wang, I.S. Roqan, R.W. Martin,K.P. O'Donnell, E. Alves, S. Ruffenach, and O. Briot

SiH4 Exposure of GaN Surfaces: A Useful Tool forHighlighting Dislocations 631

Rachel A. Oliver, Menno J. Kappers, Joy Sumner,Ranjan Datta, and Colin J. Humphreys

xvin






POSTER SESSION:HETEROSTRUCTURES

Misfit Dislocations in Green-Emitting InGaN/GaNQuantum Well Structures 639

Pedro M.F.J. Costa, Ranjan Datta, Menno J. Kappers,Mary E. Vickers, and Colin J. Humphreys

Comparative Investigation of Quantum-Dot-LikeLocalization Centers in InGaN Quantum Well andQuantum Dot Structures 645

Kathrin Sebald, Henning Lohmeyer, Jurgen Gutowski,Tomohiro Yamaguchi, and Detlef Hommel

POSTER SESSION-STRUCTURAL

Stress Evolution During the Early Stages of A1N VaporGrowth 653

B. Wu, J. Bai, V.L. Tassev, M. Lai Nakarmi, W. Sun,X. Huang, M. Dudley, H. Zhang, D.F. Bliss, J. Lin,H. Jiang, J. Yang, and M. Asif Khan

Characterization of Lattice Mosaic of a-Plane GaN Grownon r-Plane Sapphire by Metalorganic Vapor-Phase Epitaxy 659

Kazuhide Kusakabe, Shizutoshi Ando, andKazuhiro Ohkawa

Study of ELOG GaN for Application in the Fabricationof Micro-Channels for Optoelectronic Devices 665

L.E. Rodak, N.J. Berry Ann, Kalyan Reddy Kasarla,Nanying Yang, and D. Korakakis

What Does an (a+c) Dislocation Core Look Like inWurtziteGaN? 671

Imad Belabbas, Gerard Nouet, A. Bere, J. Chen,S. Petit, M.A. Belkhir, P. Ruterana, and Ph. Komninou

Characterization of Nitride Thin Films by ElectronBackscatter Diffraction and Electron Channeling ContrastImaging 677

Carol Trager-Cowan, Francis Sweeney, AJ. Wilkinson,P.W. Trimby, A.P. Day, A. Gholinia, N.-H. Schmidt,PJ. Parbrook, and I.M. Watson

xix






POSTER SESSION:VPE

Polarity Control of LP-MOVPE GaN Using N2 as theCarrier Gas 685

Seiji Mita, Ramon Collazo, Raoul Schlesser, andZlatko Sitar

Effects of GaN Template Annealing on the Optical andMorphological Quality of the Homoepitaxially OvergrownGaN Layer 691

James R. Grandusky, Vibhu Jindal, Muhammad Jamil,and Fatemeh Shahedipour-Sandvik

A TEM Investigation of Crack Reduction in AlGaN/GaNHeterostructures Using an AIN Interlayer 697

Peter D. Cherns, Clifford McAleese, Jonathan S. Barnard,Menno J. Kappers, and Colin J. Humphreys

POSTER SESSION:MBE

Growth of Nonpolar AIN and AlGaN on 4H-SiC (1-100)by Molecular Beam Epitaxy 705

Rob Armitage, Masahiro Horita, Jun Suda, andTsunenobu Kimoto

Epitaxial c-GaAs/h-GaN Heterostructures . 711Vladimir V. Chaldyshev, Yurii G. Musikhin,Nikolai A. Bert, Bent Nielsen, Emilio E. Mendez,Zhixun Ma, and Todd Holden

Growth of c-GaN Films on the Nitridated p-Ga2O3

Substrates Using RF-MBE 717Tsutomu Araki, Chiharu Morioka, Junichi Wada,Keisuke Fujiwara, Hiroshi Minami, Yasushi Nanishi,Shigeo Ohira, Norihito Suzuki, and Toetsu Shishido

Microstructure and Strain-Free Lattice Parameters ofScxGalxN Films 723

Michelle A. Moram, Timothy B. Joyce, Paul R. Chalker,Zoe H. Barber, and Colin J. Humphreys

xx






Compensation in Be-Doped Gallium Nitride Grown UsingMolecular Beam Epitaxy 729

Kyoungnae Lee, Brenda VanMil, Ming Luo,Thomas H. Myers, Andrew Armstrong, Steve A. Ringel,Mikko Rummukainen, and Kimmo Saarinen

POSTER SESSION:HVPE

What Makes Good Templates for HVPE GaN Growth? 737Corina E.C. Dam, Andrzej P. Grzegorczyk,Paul R. Hageman, and Poul K. Larsen

Thick AIN Layers Grown by HVPE on Sapphire Substrates 743Vitali Soukhoveev, Alexander Usikov, Oleg Kovalenkov,Vladimir Ivantsov, Alexander Syrkin, Vladimir Dmitriev,Charles Collins, and Michael Wraback

Temperature and Dislocation Density Effects on theThermal Conductivity of Bulk Gallium Nitride 749

Christian Mion, John F. Muth, Edward A. Preble,and Drew Hanser

POSTER SESSION-BULK

Rapid Growth of Bulk GaN Crystal Using GaN Powder asSource Material 757

Huaqiang Wu, Joseph Spinelli, Phanikumar Konkapaka,and Michael G. Spencer

Defect Content Evaluation in Single-Crystal AIN Wafers 763Robert T. Bondokov, Kenneth E. Morgan, Raj Shetty,Wayne Liu, Glen A. Slack, Mark Goorsky, andLeo J. Schowalter

Atomic Force Microscope Study on Native AIN Substrates 769Sandra B. Schujman, Wayne Liu, Nicholas Meyer,Joseph A. Smart, and Leo J. Schowalter

Crystal Growth and Defect Characterization of AIN SingleCrystals 775

Shaoping Wang, Balaji Raghothamachar, Michael Dudley,and Andrew G. Timmerman

xxi






Structural Characterization of GaN Single Crystal LayersGrown by Vapor Transport From a Gallium Oxide(Ga2O3) Powder Source 781

Balaji Raghothamachar, Phanikumar Konkapaka,Huaqiang Wu, Michael Dudley, and Michael Spencer

NANO

* MOCVD Growth and Characterization of AlGalnNNanowires and Nanostructures 789

Jung Han, K. Kim, Jie Su, Maria Gherasimova,Arto V. Nurmikko, S.F. Chichibu, and C. Broadbridge

High Degree of Crystalline Perfection in SpontaneouslyGrown GaN Nanowires 799

Kris A. Bertness, J.B. Schlager, N.A. Sanford, A.Roshko, T.E. Harvey, A.V. Davydov, I. Levin, M.D.Vaudin, x J.M. Barker, P.T. Blanchard, and L.H. Robins

Microphotoluminescence Studies on Single GaN Nanocolumns 805K. Sebald, J. Gutowski, N. Thillosen, S. Montanari,R. Meijers, R. Calarco, N. Kaluza, H. Hardtdegen,and H. Lttth

HETEROSTRUCTURES: InGaN

* Quantum-Confined Stark Effect and Polarization Field inSingle Quantum Well InGaN/GaN LEDs 813

Robert J. Kaplar, Steven R. Kurtz, and Daniel D. Koleske

Luminescence Efficiency of InGaN/GaN Quantum Wellson Bulk GaN Substrate 825

Matthias Dworzak, Thomas Stempel, Axel Hoffmann,Gijs Franssen, S. Grzanka, Tadeusz Suski, R. Czernecki,M. Leszczynski, and I. Grzegory

Quantum Well Network Structures: Investigating Long-Range Thickness Fluctuations in Single InGaN/GaNQuantum Wells 831

Nicole K. van der Laak, Rachel A. Oliver,Menno J. Kappers, and Colin J. Humphreys

* Invited Paper

xxn






Surface Morphology and Island Shape of MOVPE GrownInGaN Nano-Island Ensembles Studied by STM 837

Subhashis Gangopadhyay, Thomas Schmidt, Sven Einfeldt,Tomohiro Yamaguchi, Detlef Hommel, and Jens Falta

Near-Field Photoluminescence Spectroscopy of InGaNQuantum Dots 843

A.M. Mintairov, J.L. Merz, D.S. Sizov, V.S. Sizov,V.V. Lundin, S.O. Usov, E.E. Zavarin, A.F. Tsatsul'nikov,Yu.G. Musikhin, A.S. Vlasov, and N.N. Ledentsov

Author Index 849

Subject Index 857

xxni






PREFACE

This proceedings volume is a record of the submitted papers at Symposium FF, "GaN, A1N,InN and Related Materials," held November 28-December 2 at the 2005 MRS Fall Meeting inBoston, Massachusetts. The symposium consisted of nine half-day sessions (10 invited and89 contributed talks), and two poster sessions (131 posters total). Two of the sessions were jointsessions with Symposium EE, "Progress in Semiconductor Materials V—Novel Materials andElectronic and Optoelectronic Applications."

This continuation of the MRS symposium series on GaN and associated materials focused onadvances in basic and applied science. It also included a session on its recent competitor material ofZnO. Advances in materials and processing technology continue to enable rapid progress in theapplication of nitride semiconductors in high-frequency, high-power, high-temperature electronics,visible and ultraviolet light-emitting diodes and lasers, ultraviolet photodetectors, and otherdevices. Current and emerging research areas in this symposium included epitaxial growthstrategies for high In-composition InGaN alloys (in particular InN), AlInGaN alloys, achievinghigh p-doping levels in GaN, AlGaN, A1N and doping of InN, spintronics, developing large areaGaN and A1N substrates, controlling and understanding the influence of defects and polarization,heterojunctions to ZnO and light emitting ZnO structures, advances in materials and deviceprocessing, including etching, passivation, and materials/system integration, and novel devices andapplications of nitride materials.

It is with pleasure and optimism about the still thriving III-V nitride and related materials fieldthat we present these proceedings for publication by the Materials Research Society.

Martin KuballThomas H. MyersJoan M. RedwingTakashi Mukai

January 2006

xxv






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 862— Amorphous and Nanocrystalline Silicon Science and Technology—2005, R. Collins, P.C. Taylor,M. Kondo, R. Carius, R. Biswas, 2005, ISBN 1-55899-815-2

Volume 863— Materials, Technology and Reliability of Advanced Interconnects—2005, P.R. Besser,A.J. McKerrow, F. Iacopi, C.P. Wong, J. Vlassak, 2005, ISBN 1-55899-816-0

Volume 864— Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices, S. Ashok,J. Chevallier, B.L. Sopori, M. Tabe, P. Kiesel, 2005, ISBN 1-55899-817-9

Volume 865— Thin-Film Compound Semiconductor Photovoltaics, W. Shafarman, T. Gessert, S. Niki,S. Siebentritt, 2005, ISBN 1-55899-818-7

Volume 866— Rare-Earth Doping for Optoelectronic Applications, T. Gregorkiewicz, Y. Fujiwara, M. Lipson,J.M. Zavada, 2005, ISBN 1-55899-819-5

Volume 867— Chemical-Mechanical Planarization—Integration, Technology and Reliability, A. Kumar, J.A. Lee,Y.S. Obeng, I. Vos, E.C. Jones, 2005, ISBN 1-55899-820-9

Volume 868E—Recent Advances in Superconductivity—Materials, Synthesis, Multiscale Characterization andFunctionally Layered Composite Conductors, T. Holesinger, T. Izumi, J.L. MacManus-Driscoll,D. Miller, W. Wong-Ng, 2005, ISBN 1-55899-822-5

Volume 869— Materials, Integration and Technology for Monolithic Instruments, J. Theil, T. Blalock, M. Boehm,D.S. Gardner, 2005, ISBN 1-55899-823-3

Volume 870E—Giant-Area Electronics on Nonconventional Substrates, M.S. Shur, P. Wilson, M. Stutzmann,2005, ISBN 1-55899-824-1

Volume 87IE— Organic Thin-Film Electronics, A.C. Arias, N. Tessler, L. Burgi, J.A. Emerson, 2005,ISBN 1-55899-825-X

Volume 872— Micro- and Nanosystems—Materials and Devices, D. LaVan, M. McNie, S. Prasad, C.S. Ozkan,2005, ISBN 1-55899-826-8

Volume 873E—Biological and Bio-Inspired Materials and Devices, K.H. Sandhage, S. Yang, T. Douglas,A.R. Parker, E. DiMasi, 2005, ISBN 1-55899-827-6

Volume 874— Structure and Mechanical Behavior of Biological Materials, P. Fratzl, W.J. Landis, R. Wang,F.H. Silver, 2005, ISBN 1-55899-828-4

Volume 875— Thin Films—Stresses and Mechanical Properties XI, T. Buchheit, R. Spolenak, K. Takashima,A. Minor, 2005, ISBN 1-55899-829-2

Volume 876E—Nanoporous and Nanostructured Materials for Catalysis, Sensor and Gas Separation Applications,S.W. Lu, H. Hahn, J. Weissmuller, J.L. Gole, 2005, ISBN 1-55899-830-6

Volume 877E—Magnetic Nanoparticles and Nanowires, D. Kumar, L. Kurihara, I.W. Boyd, G. Duscher,V. Harris, 2005, ISBN 1-55899-831-4

Volume 878E—Solvothermal Synthesis and Processing of Materials, S. Komarneni, M. Yoshimura, G. Demazeau,2005, ISBN 1-55899-832-2

Volume 879E—Chemistry of Nanomaterial Synthesis and Processing, X. Peng, X. Feng, J. Liu, Z. Ren,J.A. Voigt, 2005, ISBN 1-55899-833-0

Volume 880E—Mechanical Properties of Nanostructured Materials—Experiments and Modeling, J.G. Swadener,E. Lilleodden, S. Asif, D. Bahr, D. Weygand, 2005, ISBN 1-55899-834-9

Volume 88IE—Coupled Nonlinear Phenomena—Modeling and Simulation for Smart, Ferroic and MultiferroicMaterials, R.M. McMeeking, M. Kamlah, S. Seelecke, D. Viehland, 2005, ISBN 1-55899-835-7

Volume 882E—Linking Length Scales in the Mechanical Behavior of Materials, T.J. Balk, R.E. Rudd,N. Bernstein, W. Windl, 2005, ISBN 1-55899-836-5

Volume 883— Advanced Devices and Materials for Laser Remote Sensing, F. Amzajerdian, A.A. Dyrseth,D. Killinger, L. Merhari, 2005, ISBN 1-55899-837-3

Volume 884E—Materials and Technology for Hydrogen Storage and Generation, G-A. Nazri, C. Ping,R.C. Young, M. Nazri, J. Wang, 2005, ISBN 1-55899-838-1






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 885E—The Hydrogen Cycle—Generation, Storage and Fuel Cells, A. Dillon, C. Filiou, J. Ohi, C. Oik,2006, ISBN 1-55899-839-X

Volume 886— Materials and Technologies for Direct Thermal-to-Electric Energy Conversion, J. Yang,T.P. Hogan, R. Funahashi, G.S. Nolas, 2006, ISBN 1-55899-840-3

Volume 887— Degradation Processes in Nanostructured Materials, M. Chipara, O. Puglisi, R. Skomski, F. Jones,B.S. Hsiao, 2006, ISBN 1-55899-841-1

Volume 888— Materials and Devices for Smart Systems II, Y. Furuya, J. Su, I. Takeuchi, V.K. Varadan,J. Ulicny, 2006, ISBN 1-55899-842-X

Volume 889— Electroresponsive Polymers and Their Applications, V. Bharti, Y. Bar-Cohen, Z.-Y. Cheng,J. Madden, Q.M. Zhang, 2006, ISBN 1-55899-843-8

Volume 890— Surface Engineering for Manufacturing Applications, WJ. Meng, R. Maboudian, S.C. Chen,SJ. Bull, P.R. Chalker, 2006, ISBN 1-55899-844-6

Volume 891— Progress in Semiconductor Materials V—Novel Materials and Electronic and OptoelectronicApplications, LJ. Olafsen, R.M. Biefeld, M.C. Wanke, A.W. Saxler, 2006, ISBN 1-55899-845-4

Volume 892— GaN, A1N, InN and Related Materials, M. Kuball, J.M. Redwing, T.H. Myers, T. Mukai, 2006,ISBN 1-55899-846-2

Volume 893— Actinides 2005—Basic Science, Applications and Technology, J. Sarrao, A. Schwartz, M. Antonio,P. Burns, R. Haire, H. Nitsche, 2006, ISBN 1-55899-847-0

Volume 894— Combinatorial Methods and Informatics in Materials Science, Q. Wang, R.A. Potyrailo, M. Fasolka,T. Chikyow, U.S. Schubert, A. Korkin, 2006, ISBN 1-55899-848-9

Volume 895— Life-Cycle Analysis Tools for "Green" Materials and Process Selection, S. Papasawa, V. Fthenakis,2006, ISBN 1-55899-850-0

Volume 896— Multifunctional Energetic Materials, A. Gash, N. Thadhani, W. Wilson, R. Armstrong, Z. Munir,2006, ISBN 1-55899-851-9

Volume 897E—Biomimetic Polymers and Gels, N. Langrana, F. Horkay, B. Yurke, 2006, ISBN 1-55899-852-7Volume 898E—Mechanical Behavior of Biological and Biomimetic Materials, A.J. Bushby, V.L. Ferguson,

C.-C. Ko, M.L. Oyen, 2006, ISBN 1-55899-853-5Volume 899E—Dynamics in Small Confining Systems—2005, J.T. Fourkas, P. Levitz, R. Overney, M. Urbakh,

2006, ISBN 1-55899-854-3Volume 900E—Nanoparticles and Nanostructures in Sensors and Catalysis, C.-J. Zhong, N.A. Kotov, W. Daniell,

F.P. Zamborini, 2006, ISBN 1-55899-855-1Volume 901E—Assembly at the Nanoscale—Toward Functional Nanostructured Materials, C.S. Ozkan, F. Rosei,

G.P. Lopinski, Z.L. Wang, 2006, ISBN 1-55899-856-XVolume 902E—Ferroelectric Thin Films XIII, R. Ramesh, J.-P. Maria, M. Alexe, V. Joshi, 2006,

ISBN 1-55899-857-8Volume 903E—Amorphous and Nanocrystalline Metals for Structural Applications, E. Ma, C.A. Schuh, Y. Li,

M.K. Miller, 2006, ISBN 1-55899-858-6Volume 904E—Mechanisms of Mechanical Deformation in Brittle Materials, J.E. Bradby, S.O. Kucheyev,

E.A. Stach, M.V. Swain, 2006, ISBN 1-55899-859-4Volume 905E—Materials for Transparent Electronics, H. Ohta, D.C. Paine, J.D. Perkins. J. Tate, C.W. Ow Yang,

2006, ISBN 1-55899-860-8Volume 906E—Magnetic Sensors and Sensing Systems, J.-P. Wang, W.F. Egelhoff Jr., H. Brttckl, M. Tondra,

2006, ISBN 1-55899-861-6Volume 907E— In Situ Electron Microscopy of Materials, PJ. Ferreira, I.M. Robertson, G. Dehm, H. Saka, 2006,

ISBN 1-55899-862-4Volume 908E—Growth, Modification and Analysis by Ion Beams at the Nanoscale, J.K.N. Lindner, M. Toulemonde,

WJ. Weber, B.L. Doyle, 2006, ISBN 1-55899-863-2Volume 909E—Forum on Materials Science Education, T.R. Finlayson, F.M. Goodchild, M.G. Norton,

S.R.J. Oliver, 2006, ISBN 1-55899-864-0

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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