general description features - diodes incorporated · advance datasheet high-side power...

Advance Datasheet

High-side Power Distribution Switch with Enable AP2821

Mar. 2013 Rev 2. 0 BCD Semiconductor Manufacturing Limited

1

General Description The AP2821 is an integrated high-side power switch that consists of TTL compatible enables input, a charge pump, and N-Channel MOSFET. The switch’s low RDS (ON), 120mΩ, meets USB voltage drop requirements. It includes soft-start to limit inrush current, over-current protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. Under voltage lockout (UVLO) function is used to ensure the device remain off unless there is a valid input voltage present. And no reverse current when power off, with shutdown pull-low resistor to discharge the output capacitor when EN is disable.

The AP2821 is available in standard package of SOT-23-5.

Features • Low MOSFET on Resistance: 120mΩ

@VIN=5.0V • Compliant to USB Specifications • Operating Voltage Range: 2.7V to 5.5V • Low Supply Current: 35μA (Typ.) • Low Shutdown Current: <1μA • Current Limit with Fold-back: 2A • Under-voltage Lockout • Soft Start-up • Over-current Protection • Over Temperature Protection • Load Short Protection with Fold-back • No Reverse Current when Power off • Pass System ESD: IEC61000-4-2

± 16KV (Air Discharge) and ± 8KV (Contact Discharge) on USB Connector

Applications • USB Power Management • USB Bus/Self Powered Hubs • Hot-plug Power Supplies • Battery-charger Circuits • Notebooks, Motherboard PCs

Figure 1. Package Type of AP2821

SOT-23-5

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2

Pin Configuration

K Package

（SOT-23-5）

Figure 2. Pin Configuration of AP2821 (Top View)

Pin Descriptions

Pin No. Name Descriptions

1 VOUT Switch Output Voltage 2 GND Ground

3 EN Chip Enable Control Input, Active High

4, 5 VIN Supply Input Pin

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3

Functional Block Diagram

Clock

Band GapReference

UVLO

Gate Control

Over CurrentLimiting

ThermalSense

CurrentSenseCMP

VIN

VOUT

GND

EN 3

2

4 , 5

1

Shutdown Signal

Figure 3. Functional Block Diagram of AP2821

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Ordering Information

AP2821 -

Circuit Type

Package Temperature Range Part Number Marking ID Packing Type

SOT-23-5 -40 to 85°C AP2821KTR-G1 G4E Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.

TR: Tape & Reel Package K: SOT-23-5

G1: Green

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5

Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage VIN 6.0 V Operating Junction Temperature Range TJ 150 ºC

Storage Temperature Range TSTG -65 to 150 ºC Lead Temperature (Soldering,10 Seconds) TLEAD 260 ºC

Thermal Resistance (Junction to Ambient) θJA 235 ºC/W

ESD (Machine Model) 200 V

ESD (Human Body Model) 2000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage VIN 2.7 5.5 V Ambient Operation Temperature Range TA -40 85 °C

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Electrical Characteristics (VIN=5.0V, CIN=4.7μF, COUT=4.7μF, Typical TA=25°C, unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Voltage Range VIN 2.7 5.5 V

Switch On Resistance RDS(ON) VIN=5V, IOUT=0.5A 120 140 mΩ

Current Limit ILIMIT VOUT=4.0V 1.5 2.0 2.8 A

Supply Current ISUPPLY VIN=5V, RLOAD Open 35 65 μA

Fold-back Short Current ISHORT VOUT=0V 1.5 A

Shutdown Supply Current ISHUTDOWN VEN=0V, Shutdown Mode 0.1 1 μA

Output Leakage Current ILEAKAGE VEN=0V, VOUT=0V 0.1 1 μA

Enable High Voltage VENH Enable Logic High 2.0 6.0 V

Enable Low Voltage VENL Enable Logic Low 0 1.2 V

Enable Pin Input Current IEN Force 0V to 5.0V at EN Pin 0 1.0 μA

Under Voltage LockoutThreshold Voltage

VUVLO VIN Increasing from 0V 2.2 2.5 2.7 V

Under Voltage Hysteresis VUVLOHY 0.2 V

Reverse Current IREVERSE VEN=0V, VOUT>VIN 0.1 1.0 μA

Shutdown Pull Low Resistance RDISCHARGE VEN is disable 100 250 Ω

Output Turn-on Time tON From Enable Active to 90% of Output, RL=10Ω

1.9 ms

Thermal Shutdown Temperature

TOTSD 145 oC

Thermal Shutdown Hysteresis THYOTSD 20

Thermal Resistance (Junction to Case)

θJC 70 ºC/W

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Typical Performance Characteristics

Figure 4. Supply Current vs. Input Voltage Figure 5. Current Limit vs. Temperature

Figure 6. Enable Input Threshold vs. Temperature Figure 7. Enable Input Threshold vs. Input Voltage

2.5 3.0 3.5 4.0 4.5 5.0 5.505

101520253035404550556065707580

TA=-40oC TA=25oC TA=85oC

Input Voltage (V)

Sup

ply

Cur

rent

(μA

)

VEN=VIN

-40 -20 0 20 40 60 80

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

Temperature (oC)

Cur

rent

Lim

it (A

)

VIN=5V

-40 -20 0 20 40 60 800.0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4 VIN=5V

VEN Rising VEN Falling

Temperature (oC)

Ena

ble

Inpu

t Thr

esho

ld (V

)

2.5 3.0 3.5 4.0 4.5 5.0 5.50.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

VEN Rising VEN Falling

Enab

le In

put T

hres

hold

(V)

TA=25oC

Input Voltage (V)

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Typical Performance Characteristics (Continued)

Figure 8. UVLO Threshold Voltage vs. Temperature Figure 9. UVLO Function

Figure 10. Switch-on Resistance vs. Input Voltage Figure 11. Switch-on Resistance vs. Temperature

-40 -20 0 20 40 60 801.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

Temperature (oC)

VIN Rising VIN Falling

UVL

O T

hres

hold

(V)

2.5 3.0 3.5 4.0 4.5 5.0 5.50

50

100

150

200

250

300

350

400

TA=-40oC TA=25oC TA=85oC

Switc

h-on

Res

ista

nce

(mΩ

)

Input Voltage (V)

IOUT=1A

-40 -20 0 20 40 60 80

60

80

100

120

140

160

180

200

220

240

260

280

300

VIN

=3V VIN=4V VIN=5V

Temperature (oC)

Switc

h-on

Res

ista

nce

(mΩ

) IOUT

=1A

0 1 2 3 4 5

0

1

2

3

4

5

Input Voltage (V)

No Load VIN Rising VIN Falling

UVLO

Out

put V

olta

ge (V

)

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Figure 12. Output Short to GND Current Figure 13. Output Short to GND Current vs. Input Voltage vs. Temperature

Figure 14. Output Voltage vs. Output Current Figure 15. Switch Turn-on and Rise Time

(VIN=3.3V, COUT=4.7μF, No Load)

3.0 3.5 4.0 4.5 5.0 5.51.0

1.2

1.4

1.6

1.8

2.0

Out

put S

hort

to G

ND

Cur

rent

(A)

Input Voltage (V)

TA=25OC

0.0 0.5 1.0 1.5 2.0 2.50

1

2

3

4

5

Output Current (A)

Out

put V

olta

ge (V

)

VIN=5VVEN=5VTA=25OC

-40 -20 0 20 40 60 80

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Temperature (OC)

Out

put S

hort

to G

ND

Cur

rent

(A)

VIN=5VVEN=5V

VEN 5V/div

VOUT 1V/div

Time 1ms/div

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Figure 16. Switch Turn-on and Rise Time Figure 17. Switch Turn-on and Rise Time (VIN=5.0V, COUT=4.7μF, No Load) (VIN=3.3V, COUT=4.7μF, RL=10Ω)

Figure 18. Switch Turn-on and Rise Time Figure 19. Switch Turn-on and Rise Time (VIN=5.0V, COUT=4.7μF, RL=10Ω) (VIN=3.3V, COUT=100μF, RL=10Ω)

VEN 5V/div

VOUT 1V/div

Time 1ms/div

VEN 5V/div

VOUT 1V/div

IOUT 500mA

/div

Time 1ms/div

VEN 5V/div

VOUT 1V/div

IOUT 500mA

/div

VEN 5V/div

VOUT 1V/div

IOUT 500mA

/div

Time 1ms/div Time 1ms/div

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Figure 20. Switch Turn-on and Rise Time Figure 21. Switch Turn-off and Fall Time

(VIN=5.0V, COUT=100μF, RL=10Ω) (VIN=3.3V, COUT=4.7μF, No Load)

Figure 22. Switch Turn-off and Fall Time Figure 23. Switch Turn-off and Fall Time

(VIN=5.0V, COUT=4.7μF, No Load) (VIN=3.3V, COUT=100μF, No Load)

VEN 5V/div

VOUT 1V/div

IOUT 500mA

/div

VEN 5V/div

VOUT 1V/div

VOUT 1V/div

VOUT 1V/div

Time 1ms/div

Time 1ms/div Time 1ms/div

Time 10ms/div

VEN 5V/div

VEN 5V/div

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Figure 24. Switch Turn-off and Fall Time Figure 25. Switch Turn-off and Fall Time (VIN=5.0V, COUT=100μF, No Load) (VIN=3.3V, COUT=100μF, RL=10Ω)

Figure 26. Switch Turn-off and Fall Time Figure 27. Resistance Load Inrush Response (VIN=5.0V, COUT=100μF, RL=10Ω) (COUT=4.7μF, RL=1.65Ω)

VOUT 2V/div

IOUT 1A/div

Time 100μs/div

VOUT 1V/div

Time 10ms/div

VOUT 1V/div

Time 500µs/div

VOUT 1V/div

Time 500µs/div

VEN 5V/div

VEN 5V/div

IOUT 500mA

/div

VEN 5V/div

IOUT 500mA

/div

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13


Figure 28. Short-circuit Current, Figure 29. Thermal Shutdown Response Device Enable into Short (VIN=5.0V, COUT=4.7μF, RL=1.65Ω)

(VIN=5.0V, COUT=4.7μF)

VEN 5V/div

Time 100ms/div

VOUT 2V/div

IOUT 1A/div

Time 200μs/div

VEN 5V/div

IOUT 1A/div

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14

Typical Application

Note 2: 4.7μF input capacitor is enough in most application cases. If the PCB trace of power rail to VIN is long, larger input capacitor is necessary.

Figure 30. AP2821 Typical Application

Advance Datasheet



15

Mechanical Dimensions SOT-23-5 Unit: mm(inch)

2.820(0.111)

2.65

0(0.

104)

1.5 0

0(0.

059 )

0.000(0.000)

0.300(0.012)0.950(0.037)

0.900(0.035)

0.100(0.004)

0.200(0.008)

0.30

0(0.

012)

8°0°

3.100(0.122)

1.70

0(0.

0 67)

3.00

0(0.

118)

0.500(0.020)

0.150(0.006)

1.300(0.051)

0.200(0.008)

0.60

0(0.

024)

1.800(0.071)2.000(0.079)

0.700(0.028)REF

TYP

1.45

0 (0.

057)

MA X

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16

Mounting Pad Layout

SOT-23-5

E2

E1

Y

X

G Z

Dimensions Z (mm)/(inch)

G (mm)/(inch)

X (mm)/(inch)

Y (mm)/(inch)

E1 (mm)/(inch)

E2 (mm)/(inch)

Value 3.600/0.142 1.600/0.063 0.700/0.028 1.000/0.039 0.950/0.037 1.900/0.075

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.

- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Limited800, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing LimitedMAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen OfficeAdvanced Analog Circuits (Shanghai) Corporation Shenzhen OfficeRoom E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951Fax: +86-755-8826 7865

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BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE


- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.800 Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen OfficeUnit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,China Tel: +86-755-8826 7951Fax: +86-755-8826 7865

Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808Fax: +886-2-2656 2806

USA OfficeBCD Semiconductor Corp.30920 Huntwood Ave. Hayward,CA 94544, USATel : +1-510-324-2988Fax: +1-510-324-2788

- HeadquartersBCD Semiconductor Manufacturing LimitedNo. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, ChinaTel: +86-21-24162266, Fax: +86-21-24162277

IMPORTANT NOTICE


- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yishan Road, Shanghai 200233, China Tel: +021-6485-1491, Fax: +86-021-5450-0008

MAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen OfficeUnit A Room 1203,Skyworth Bldg., Gaoxin Ave.1.S., Nanshan DistrictShenzhen 518057, China Tel: +86-0755-8660-4900, Fax: +86-0755-8660-4958

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- HeadquartersBCD (Shanghai) Micro-electronics LimitedNo. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, P. R.C.Tel: +86-021-2416-2266, Fax: +86-021-2416-2277

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general description features - diodes incorporated · advance datasheet high-side power...

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