giant leap for magnetoresistance
TRANSCRIPT
There are times when research progress is incremental or serendipitous. Then
there are those few occasions when a leap is made by one or more groups of
clever and motivated researchers. This is the case for the recent development of
magnetic tunnel junctions (MTJs) that use a single-crystal MgO tunnel barrier.
One of the most active areas in materials science is magnetoelectronics. This
field focuses on the development of integrated devices that use the spin
orientation of conduction electrons in order to achieve new functionalities.
Typical structures incorporate patterned thin films of transition metal
ferromagnetic elements. One success is the spin-valve sensor used in read
heads. These have been used in hard disk drives since 1998 and are largely
responsible for the great increase in storage density ever since. Spin valves have
a resistance of ~50 Ω that changes by a fractional amount (the
magnetoresistance, or MR) of ~12% in the modest fields associated with bits
recorded in magnetic media. Read heads are packaged, sold, and used
individually, and there is a large research effort aimed at more highly integrated
applications, such as nonvolatile magnetic random access memory (MRAM).
The development of MTJs with Al2O3 barriers has enabled MRAM prototypes of
a few megabits. These MTJs show spin-dependent tunneling (SDT) with room-
temperature MR values of 50-70%. Prototype MRAM chips show very high
performance with metrics that are superior to static random access memory and
floating gate memories. But scaling problems associated with cell size and
ferromagnetic hysteresis stand in the way of high-density MRAM.
The accepted model for SDT is named after the man who, in 1975, made the
first MTJ and analyzed its tunnel magnetoresistance (TMR). The Jullière model is
approximately correct for MTJs that use amorphous tunnel barriers such as
Al2O3. The conduction band of each ferromagnetic electrode has an up-spin and
a down-spin subband density of states at the Fermi level. Because they differ, an
electric current in the ferromagnet has a fractional spin polarization P < 1.
SDT is given by a simple calculation that depends on the up- and down-spin
densities of states of the two electrodes. For transition metal ferromagnetic
materials commonly used in MTJs, P ~ 40-50% and the TMR is 50-70%.
Motivated by preliminary experiments using MgO barriers, a group of theorists
challenged the simple Jullière model. In their analysis [Butler et al., Phys. Rev. B
(2001) 63, 054416; Mathon and Umerski, Phys. Rev. B (2001) 63, 220403R],
each ferromagnetic electrode has conduction electrons that are described by
Bloch waves, and each of these Bloch waves has a unique evanescent wave (and
decay length) in the single-crystal MgO barrier. The polarization of the
conduction electrons that cross the barrier depends on the symmetry of the
wavefunction and the characteristics of the evanescent wave. Bloch waves with
momenta perpendicular to the barrier may be characterized by high spin
polarization and relatively high transmission, whereas Bloch waves with
transverse momentum components may have low spin polarization and be
preferentially reflected by the barrier. In this way, the TMR can be much larger
than 70% and the spin polarization larger than 50%.
At about the same time, a group at IBM was working on MgO barriers. In a
beautiful set of experiments [Parkin et al., Nat. Mater. (2004) 3 (12), 862], they
fabricated CoFe/Fe/MgO/CoFe and CoFe/MgO/CoFe MTJs by room-temperature
sputtering and measured room-temperature TMR values as large as 220%.
The MTJ stack was highly textured but not single crystalline. This is important
because their growth process is compatible with semiconductor processing.
Furthermore, they found P = 85%, much larger than expected in a simple
Jullière model but consistent with the predictions of theory. A Japanese group
independently confirmed this picture with excellent experimental results [Yuasa
et al., Nat. Mater. (2004) 3 (12), 868]. Single-crystal Fe(001)/MgO(001)/Fe(001)
MTJs were grown epitaxially and room-temperature TMR values as large as
180% were measured. They studied MTJs with a wide range of barrier
thicknesses, measuring the barrier height to be about 0.39 eV and
demonstrating high TMR for MTJs with a product of resistance and area as small
as 300 Ω µm2. These are excellent characteristics for device applications.
These extraordinarily high values of TMR translate to high values of device
output voltage, and IBM has already made submicron devices. The
implications may be very important for next-generation read heads in the
magnetic recording industry, and for MRAM, which will benefit in the scaling of
device impedance as well as output. More important is the new understanding
of the fundamental physical principles of spin transport in ferromagnetic
materials and across tunnel barriers. This will have an impact on a variety of
spin-injection devices.
Mark Johnson is a research physicist at the US Naval Research Laboratory, Washington, DC.
Giant leap formagnetoresistance
OPINION
...Mark Johnson
September 200556