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GOFORD GT52N10

Description

General Features

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Application

Schematic diagram

Marking and pin assignment

DFN 5x6

GT52N10

VDSS RDS(ON)

@10V (typ) ID

100V 6.2 Ω 48A

RDS(ON) @4.5V (typ)

8.5 m Ωm

HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466

· Trench Power MV MOSFET technology· Low RDS(ON)· Low Gate Charge· Optimized for fast-switching applications

· Synchronus Rectification in DC/DC and AC/DC Converters· Industrial and Motor Drive applications

SymbolVDS

VGS

IDM

EAS 105

TJ, TSTG

Symbol

t ≤ 10s 12

Steady-State 32Steady-State RθJC 1.4

W

W

75

30

8.3

6.6Power Dissipation A

TA=25°CPDSM

TA=70°C

Power Dissipation BTC=25°C

TC=100°CPD

A

Gate-Source Voltage

A

Avalanche energy L=0.3mH C mJ

105

Continuous DrainCurrent

TA=25°C

TA=100°CIDSM

22

18

°C/W

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A D

Maximum Junction-to-Case

15 °C/W

°C/W401.67

RθJA

Parameter Maximum UnitsThermal Characteristics

Drain-Source Voltage

Junction and Storage Temperature Range °C-55 to 150

100

±20

V

Pulsed Drain Current C A

V

Continuous Drain

Current GTC=25°C

TC=100°CID

48

43

Maximum UnitsParameter

Absolute Maximum Ratings TA=25°C unless otherwise noted

(Package Limited)

Symbol Min Typ Max Units

BVDSS 100 V

1

TJ=55°C 5

IGSS ±100 nA

VGS(th) 1.3 1.9 2.5 V

6.2

TJ=125°C

8.5 10.0

gFS 30 S

VSD 0.7 0.95 V

IS 48 A

Ciss 2808 pF

Coss 961 pF

Crss 23 pF

Rg 2

Qg(10V) 50 nC

Qg(4.5V) 33 nC

Qgs 17 nC

Qgd 11 nC

tD(on) 15 ns

tr 12 ns

tD(off) 25 ns

tf 13 nstrr 45 nsQrr 140 nC

Body Diode Reverse Recovery Time IF=20A,di/dt=500A/µs

Body Diode Reverse Recovery charge IF=20A,di/dt=500A/µs

Gate Source Charge

Gate Drain Charge

Total Gate ChargeSWITCHING PARAMETERS

Turn-on Delay Time

VGS=10V, VDS=50V, RL=2.5Ω,

RGEN=3ΩTurn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

VGS=10V, ID=24A

IS=1A,VGS=0V

Gate resistance VGS=0V, VDS=0V, f=1MHz

VDS=5V, ID=20A

Static Drain-Source On-Resistance

Diode Forward Voltage

Diode Forward Voltage

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

IDSS A

Drain-Source Breakdown Voltage ID=250A, VGS=0V

VDS=VGS, ID=250A

VDS=100V, VGS=0V

VDS=0V, VGS=±20V

Reverse Transfer Capacitance

VGS=0V, VDS=15V, f=1MHz

Zero Gate Voltage Drain Current

Gate-Body leakage current

Maximum Body-Diode Continuous Current G

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

Gate Threshold Voltage

m

VGS=4.5V, ID=24A

Total Gate ChargeVGS=10V, VDS=50V, ID=24A

A. The value of RθJA is measured with the device mounted on 1in2 FR‐4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power

dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends onthe user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction‐to‐case thermal resistance, and is more useful in setting the upper dissipationlimit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature TJ(MAX)=150°C.D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction‐to‐case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR‐4 board with 2oz. Copper, in a still air environment with TA=25°C.

GOFORD GT52N10


7.3

115

10.9 12.8

0

20

40

60

80

100

1 2 3 4 5

I D (A

)

VGS (Volts)Figure 2: Transfer Characteristics (Note E)

1.0E+02

0.8

1

1.2

1.4

1.6

1.8

2

2.2

0 25 50 75 100 125 150 175

Nor

mal

ized

On-

Res

ista

nce

Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=4.5VID=24A

VGS=10VID=24A

30

25°C

125°C

VDS=5V

ID=24A

0

20

40

60

80

100

0 1 2 3 4 5

I D(A

)

VDS (Volts)Figure 1: On-Region Characteristics (Note E)

3.5V

4.5V

6V

4V

3V

10V

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

I S(A

)

VSD (Volts)Figure 6: Body-Diode Characteristics

(Note E)

25°C

125°C

0

5

10

15

20

25

2 4 6 8 10

RD

S(O

N)(m

ΩΩ ΩΩ)

VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

25°C

125°C

ID (A)Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

RD

S(O

N)(m

ΩΩ ΩΩ)

GOFORD GT52N10


VG

S(V

olts

)

Qg (nC)Figure 7: Gate-Charge Characteristics

Cap

acita

nce

(pF

)

VDS (Volts)

10µs

0.0

0.1

1.0

10.0

100.0

1000.0

0.01 0.1 1 10 100 1000

I D(A

mps

)

VDS (Volts)VGS> or equal to 4.5V

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10µs

1ms

DC

RDS(ON) limited

TJ(Max)=150°CTC=25°C

100µs

10ms

Figure 8: Capacitance Characteristics

40

0.01

0.1

1

10

1E-05 0.0001 0.001 0.01 0.1 1 10 100

Zθθ θθJ

CN

orm

aliz

ed T

rans

ient

Th

erm

al R

esis

tanc

e

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Imp edance (Note F)

Single Pulse

D=Ton/TTJ,PK=TC+PDM.ZθJC.RθJC

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJC=1.67°C/W

GOFORD GT52N10


-

+VDC

Ig

Vds

DUT

-

+VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

-

+VDC

DUT VddVgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t trd(on)

ton

td(off) t f

toff

VddVgs

Id

+VDC

L

Vgs

Vds

BV

I

Vds

AR

DSS

2E = 1/2 LIARAR

Figure A: Gate Charge Test Circuit & Waveforms

Figure B:

Figure C: Unclamped Inductive Switching (UIS) Test

VddVgs

Vgs

Rg

DUT

-VDC

Id

Vgs

I

Ig

Vgs

-

+VDC

DUT

L

Vgs

Vds

IsdIsd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

I F

AR

dI/dt

I RM

rr

VddVdd

Q = - Idt

t rr

Figure D: Diode Recovery Test Circuit & Waveforms

GOFORD GT52N10


goford gt52n10 - dzsc.comfile2.dzsc.com/product/17/05/08/1125801_141932716.pdf · ·synchronus...

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