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Heteroepitaxy on Silicon

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Cambridge University Press978-1-107-41119-7 - Heteroepitaxy on SiliconEdited by J. C. C. Fan and J. M. PoateFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

ISSN 0272 - 9172

Volume 1—Laser and Electron-Beam Solid Interactions and Materials Processing,J. F. Gibbons, L. D. Hess, T. W. Sigmon, 1981

Volume 2—Defects in Semiconductors, J. Narayan, T. Y. Tan, 1981

Volume 3—Nuclear and Electron Resonance Spectroscopies Applied to MaterialsScience, E. N. Kaufmann, G. K. Shenoy, 1981

Volume 4—Laser and Electron-Beam Interactions with Solids, B. R. Appleton,G. K. Celler, 1982

Volume 5—Grain Boundaries in Semiconductors, H. J. Leamy, G. E. Pike,C H. Seager, 1982

Volume 6—Scientific Basis for Nuclear Waste Management, S. V. Topp, 1982

Volume 7—Metastable Materials Formation by Ion Implantation, S. T. Picraux,W. J. Choyke, 1982

Volume 8—Rapidly Solidified Amorphous and Crystalline Alloys, B. H. Kear,B. C. Giessen, M. Cohen, 1982

Volume 9—Materials Processing in the Reduced Gravity Environment of Space,G. E. Rindone, 1982

Volume 10—Thin Films and Interfaces, P. S. Ho, K.-N. Tu, 1982

Volume 11—Scientific Basis for Nuclear Waste Management V, W. Lutze, 1982

Volume 12—In Situ Composites IV, F. D. Lemkey, H. E. Cline, M. McLean, 1982

Volume 13—Laser Solid Interactions and Transient Thermal Processing of Materials,J. Narayan, W. L. Brown, R. A. Lemons, 1983

Volume 14—Defects in Semiconductors II, S. Mahajan, J. W. Corbett, 1983

Volume 15—Scientific Basis for Nuclear Waste Management VI, D. G. Brookins, 1983

Volume 16—Nuclear Radiation Detector Materials, E. E. Haller, H. W. Kraner, W. A.Higinbotham, 1983

Volume 17—Laser Diagnostics and Photochemical Processing for SemiconductorDevices, R. M. Osgood, S. R. J. Brueck, H. R. Schlossberg, 1983

Volume 18—Interfaces and Contacts, R. Ludeke, K. Rose, 1983

Volume 19—Alloy Phase Diagrams, L. H. Bennett, T. B. Massalski, B. C. Giessen,1983

Volume 20—Intercalated Graphite, M. S. Dresselhaus, G. Dresselhaus, J. E. Fischer,M. J. Moran, 1983

Volume 21—Phase Transformations in Solids, T. Tsakalakos, 1984

Volume 22—High Pressure in Science and Technology, C. Homan, R. K. MacCrone,E. Whalley, 1984

Volume 23—Energy Beam-Solid Interactions and Transient Thermal Processing,J. C. C. Fan, N. M. Johnson, 1984

Volume 24—Defect Properties and Processing of High-Technology NonmetallicMaterials, J. H. Crawford, Jr., Y. Chen, W. A. Sibley, 1984







Volume 25—Thin Films and Interfaces II, J. E. E. Baglin, D. R. Campbell, W. K. Chu,1984

Volume 26—Scientific Basis for Nuclear Waste Management VII, G. L. McVay, 1984

Volume 27—Ion Implantation and Ion Beam Processing of Materials, G. K. Hubler,O. W. Holland, C. R. Clayton, C. W. White, 1984

Volume 28—Rapidly Solidified Metastable Materials, B. H. Kear, B. C. Giessen, 1984

Volume 29—Laser-Controlled Chemical Processing of Surfaces, A. W. Johnson,D. J. Ehrlich, H. R. Schlossberg, 1984.

Volume 30—Plasma Processsing and Synthesis of Materials, J. Szekely, D. Apelian,1984

Volume 31—Electron Microscopy of Materials, W. Krakow, D. Smith, L. W. Hobbs,1984

Volume 32—Better Ceramics Through Chemistry, C. J. Brinker, D. E. Clark, D. R.Ulrich, 1984

Volume 33—Comparison of Thin Film Transistor and SOI Technologies, H. W. Lam,M. J. Thompson, 1984

Volume 34—Physical Metallurgy of Cast Iron, H. Fredriksson, M. Hillerts, 1985

Volume 35—Energy Beam-Solid Interactions and Transient Thermal Processing/1984,D. K. Biegelsen, G. Rozgonyi, C. Shank, 1985

Volume 36—Impurity Diffusion and Gettering in Silicon, R. B. Fair, C. W. Pearce,J. Washburn, 1985

Volume 37—Layered Structures, Epitaxy and Interfaces, J. M. Gibson, L. R. Dawson,1985

Volume 38—Plasma Synthesis and Etching of Electronic Materials, R. P. H. Chang,B. Abeles, 1985

Volume 39—High-Temperature Ordered Intermetallic Alloys, C. C. Koch, C T. Liu,N. S. Stoloff, 1985

Volume 40—Electronic Packaging Materials Science, E. A. Giess, K.-N. Tu,D. R. Uhlmann, 1985

Volume 41—Advanced Photon and Particle Techniques for the Characterization ofDefects in Solids, J. B. Roberto, R. W. Carpenter, M. C. Wittels, 1985

Volume 42—Very High Strength Cement-Based Materials, J. F. Young, 1985.

Volume 43—Coal Combustion and Conversion Wastes: Characterization, Utilization,and Disposal, G. J. McCarthy, R. J. Lauf, 1985

Volume 44—Scientific Basis for Nuclear Waste Management VIII, C. M. Jantzen,J. A. Stone, R. C. Ewing, 1985

Volume 45—Ion Beam Processes in Advanced Electronic Materials and DeviceTechnology, F. H. Eisen, T. W. Sigmon, B. R. Appleton, 1985

Volume 46—Microscopic Identification of Electronic Defects in Semiconductors, N. M.Johnson, S. G. Bishop, G. D. Watkins, 1985







Volume 47—Thin Films: The Relationship of Structure to Properties, C. R. Aita,K. S. SreeHarsha, 1985

Volume 48—Applied Material Characterization, W. Katz, P. Williams, 1985

Volume 49—Materials Issues in Applications of Amorphous Silicon Technology,D. Adler, A. Madan, M. J. Thompson, 1985

Volume 50—Scientific Basis for Nuclear Waste Management IX, L. O. Werme, 1985

Volume 51—Beam-Solid Interactions and Phase Transformations, H. Kurz, G. L. Olson,J. M. Poate, 1986

Volume 52—Rapid Thermal Processing, T. O. Sedgwick, T. E. Siedel, B. Y. Tsaur, 1986

Volume 53—Semiconductor-on-Insulator and Thin Film Transistor Technology,

A. Chiang. M. W. Geis, L. Pfeiffer, 1986

Volume 54—Interfaces and Phenomena, R. H. Nemanich, P. S. Ho, S. S. Lau, 1986

Volume 55—Biomedical Materials, M. F. Nichols, J. M. Williams, W. Zingg, 1986Volume 56—Layered Structures and Epitaxy, M. Gibson, G. C. Osbourn, R. M. Tromp,

1986

Volume 57—Phase Transitions in Condensed Systems—Experiments and Theory,G. S. Cargill III, F. Spaepen, K. N. Tu, 1986

Volume 58—Rapidly Solidified Alloys and Their Mechanical and Magnetic Properties,B. C. Giessen, D. E. Polk, A. I. Taub, 1986

Volume 59—Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon,J. W. Corbett, J. C. Mikkelsen, Jr., S. J. Pearton, S. J. Pennycook, 1986

Volume 60—Defect Properties and Processing of High-Technology NonmetallicMaterials, Y. Chen, W. D. Kingery, R. J. Stokes, 1986

Volume 61—Defects in Glasses, Frank L. Galeener, David L. Griscom, Marvin J. Weber,1986

Volume 62—Materials Problem Solving with the Transmission Electron Microscope,L. W. Hobbs, K. H. Westmacott, D. B. Williams, 1986

Volume 63—Computer-Based Microscopic Description of the Structure and Propertiesof Materials, J. Broughton, W. Krakow, S. T. Pantelides, 1986

Volume 64—Cement-Based Composites: Strain Rate Effects on Fracture, S. Mindess,S. P. Shah, 1986

Volume 65—Fly Ash and Coal Conversion By-Products: Characterization, Utilizationand Disposal III, G. J. McCarthy , D. M. Roy, 1986

Volume 66—Frontiers in Materials Education, G. L. Liedl, L. W. Hobbs, 1986

Volume 67—Heteroepitaxy on Silicon Technology, J. C. C. Fan, J. M. Poate, 1986

Volume 68—Plasma Processing, J. Coburn, R. A. Gottscho, D. W. Hess, 1986

Volume 69—Materials Characterization, M.-A. Nicolet, N. W. Cheung, 1986

Volume 70—Materials Issues in Amorphous-Semiconductor Technology, D. Adler,Y. Hamakawa, A. Madan, 1986







Volume 71—Materials Issues in Silicon Integrated Circuit Processing, M. Wittmer,J. Stimmell, M. Strathman, 1986

Volume 72—Electronic Packaging Materials Science, D. R. Ulrich, R. C. Pohanka,D. R. Uhlmann, K. A. Jackson, 1986

Volume 73—Better Ceramics Through Chemistry II, C. J. Brinker, D. E. Clark,D. R. Ulrich, 1986






MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS VOLUME 67

Heteroepitaxy on Silicon

Symposium held April 16-18, 1986, Palo Alto, California, U.S.A.

EDITORS:

J. C. C. FanKopin Corporation, Taunton, Massachusetts, U.S.A.

J. M. PoateAT&T Bell Laboratories, Murray Hill, New Jersey, U..S.A.

I MATERIALS RESEARCH SOCIETY1 Pittsburgh, Pennsylvania






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© Materials Research Society 1986

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First published 1986 First paperback edition 2012

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Contents

PREFACE xiii

ACKNOWLEDGMENTS XV

REPORT OF PANEL SESSION xvii

PART I: GROWTH OF GaAs ON Si

*MBE GROWTH OF GaAs ON Si: PROBLEMS AND PROGRESSHerbert Kroemer 3

*MOCVD GROWTH OF III-V COMPOUNDS ON Si USING STRAINEDSUPERLATTICES

Shiro Sakaif Tetsuo Sogaf Masanari Takeyasurand Masayoshi Umeno 15

MBE GROWTH OF LOW DISLOCATION AND HIGH MOBILITYGaAs-on-Si

Jhang Woo Lee 29

THE GROWTH OF GaAs ON Si BY MOLECULAR BEAM EPITAXYS.M. Koch, S.J. Rosner, Darrell Schlom, andJ.S. Harris, Jr. 37

INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100)SILICON

D.K. Biegelsen, F.A. Poncer A.J. Smith, andJ.C. Tramontana 45

PART II: PROPERTIES OF GaAs ON Si

•GROWTH OF GaAs ON Si AND ITS APPLICATION TO FETS ANDLEDS

Masahiro Akiyamaf Yoshihiro Kawaradaf Seiji Nishif

Takashi Uedar and Katsuzo Kaminishi 53

*GaAs/Ge CRYSTAL GROWTH ON Si AND SiO2/Si SUBSTRATESYoshiro Ohmachi, Yukinobu Shinoda, andSatoshi Oku 65

MICROSTRUCTURE OF THIN LAYERS OF MBE-GROWN GaAs ONSi SUBSTRATES

S.J. Rosnerr S.M. Koch, S. Laderman, andJ.S. Harris, Jr. 77

OBSERVATION OF GaAs/Si EPITAXIAL INTERFACES BY ATOMICRESOLUTION ELECTRON MICROSCOPY

N. Otsuka, C. Choi, Y. Nakamura, S. Nagakura,R. Fischer, C.K. Peng, and H. Morkoc 85

•Invited paper

ix






MATERIAL CHARACTERIZATION OF EPITAXIAL GaAs AND GeFILMS ON (100) Si SUBSTRATES

M. Abdul Awalf El Hang Lee, G.L. Koos, E.Y. Chan,G.K. Celler, and T.T. Sheng 93

PART III: HETEROSTRUCTURES OFSEMICONDUCTORS AND INSULATORS ON Si

*HETEROEPITAXY OF Sir Ge, AND GaAs FILMS ON CaF2/SiSTRUCTURES

H. Ishiwara, T. Asano, H.C. Lee, Y. Kuriyama,K. Seki, and S. Furukawa 105

USING RAPID THERMAL ANNEALING TO IMPROVE EPITAXIALCaF2/CoSi2/Si (111) STRUCTURES

Julia M. Phillips and W.M. Augustyniak 115

MOLECULAR BEAM EPITAXY OF GaSb/AlSb OPTICAL DEVICELAYERS ON Si (100)

R.J. Malik, J.P. van der Ziel, B.F. Levine,C.G. Bethea, P.M. Petroff, J. Walker, andR. Hamm 119

ELECTRICAL PROPERTIES AND STRUCTURAL DEFECTS INEPITAXIAL CaF2 ON Si

L.J. Schowalter, R.W. Fathauer, F.A. Ponce,G. Anderson, and Shin Hashimoto 125

HETEROEPITAXY OF GALLIUM ARSENIDE ON GERMANIUMCOATED SILICON SUBSTRATES

Shirley S. Chu, T.L. Chu, and H. Firouzi 135

A HgCdTe/CdTe/GaAs/Si EPITAXIAL STRUCTUREK. Zanio, R. Bean, K. Hay, R. Fischer, andH. Morkoc 141

PART IV: DEVICE PROPERTIES OF GaAs ON Si

*HIGH SPEED GaAs BASED DEVICES ON Si SUBSTRATESHadis Morkoc 149

*GaAs/AlGaAs DIODE LASERS ON MONOLITHIC GaAs/SiSUBSTRATES

T.H. Windhorn, G.W. Turner, and G.M. Metze 157

MONOLITHIC INTEGRATION OF Si AND GaAs DEVICESH.K. Choi, G.W. Turner, B-Y. Tsaur, andT.H. Windhorn 165

GaAs MESFET's ON SILICON SUBSTRATES FOR DIGITAL ICAPPLICATIONS

Hisashi Shichijo and Jhang Woo Lee 173

HIGH-SPEED PHOTOCONDUCTIVE DETECTORS FABRICATED INHETEROEPITAXIAL GaAs LAYERS

G.W. Turner, V. Diadiuk, H.Q. Le, H.K. Choi,G.M. Metze,and B-Y. Tsaur 181

*Invited paper






STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-SiSUPERLATTICES

J. Bevkf J.P. Mannaerts, L.C. Feldman, B.A.Davidson, W.P. Lowe, A.M. Glass, T.P. PearsallrJ. Menendez, A. Pinczukf and A. Ourmazd 189

HIGH VOLUME PRODUCTION GROWTH OF GaAs ON SILICONSUBSTRATES

Chris R. Ito, M. Fengf V.K. Euf and H.B. Kim 197

PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATIONSPECTRA OF GaAs GROWN DIRECTLY ON Si

S. Zemon, S.K. Shastryr P. Norrisr C. Jagannathfand G. Lambert 203

PART V: HETEROSTRUCTURES OFSEMICONDUCTORS AND METALS ON Si

*THE FORMATION OF THIN LAYERS AND DOUBLE HETERO-STRUCTURES OF EPITAXIAL SILICIDES

R.T. Tung and J.M. Gibson 211

TUNNELING SPECTROSCOPY OF SINGLE-CRYSTAL CoSi2 ANDNiSi, EPILAYERS ON n-TYPE Si

R.J. Hauenstein, L.J. Schowalterf B.D. Hunt, O.J.Marsh, and T.C. McGill 227

•PROPERTIES AND APPLICATIONS OF MOLECULAR BEAMEPITAXIAL SILICIDES

K.L. Wang and Y.C. Kao 235

GROWTH OF GROUP IV-IV HETEROSTRUCTURES: INITIALSTAGES OF INTERFACE FORMATION

H.-J. Gossmann and L.C. Feldman 251

EPITAXIAL CRYSTALLIZATION OF Ge ON Si USINGEVAPORATION AND RECRYSTALLIZATION TECHNIQUES

El Hang Lee, M. Abdul Awal, G.K. Celler,L. Pfeiffer, and T.T. Sheng 259

AUTHOR INDEX 269

SUBJECT INDEX 271

•Invited paper

xi






Preface

This volume contains papers presented at the symposium on "Heteroepitaxy on Silicon"held in Palo Alto, California, April 16-18, 1986. The symposium was the first of its kinddevoted to the subject of heteroepitaxy on Si. Silicon homoepitaxy is well established and isvital in the Si industry. If heteroepitaxy on Si is successful, the applications will beconsiderable, ranging from optical communication, high-speed integrated circuits, to solar cells.Understanding and controlling the crystal growth processes present a major challenge tomaterial scientists. Significant advances in heteroepitaxy and device fabrication have recentlybeen achieved by many workers.

The symposium was well attended (over two hundred attendees) and represented aninternational forum for this emerging subject. Progress is outstanding, both in terms offundamental understanding and in the area of practical applications. Over thirty papers werepresented in oral sessions, and the majority of these are incorporated in this book.

Nine internationally recognized scientists were invited to give papers on topics, rangingfrom material and device properties of GaAs on Si, initial nucleation phenomena and the growthof insulators and metals on Si. An evening panel session on "Future of GaAs on Si" brought outlively discussion. The issues and responses from the panelists have been tabulated anddescribed in the volume.

Symposium Co-Chairmen

John C. C. Fan John M. Poate

July 1986

xiii






Acknowledgments

We wish to thank all the contributors and participants who made the symposium sosuccessful. We particularly would like to acknowledge the invited speakers, who providedexcellent summaries of specific areas and set the tone of the meeting. They are:

M. Akiyama S. SakaiH. Ishiwara R. T. TungH. Kroemer K L WangH. Morkoc T. H. WindhornY. Ohmaehi

We are also grateful to the panelists who helped bring out many important issues on"GaAs on Si". They are:

M. Akiyama R. KoyamaJ. Goodman H. KroemerK Kim H. Morkoc

We are deeply indebted to the session chairs who directed the sessions, guided thediscussions, and gave invaluable help in getting the papers refereed. They are:

J. C. C. Fan J. M. PoateR. P. Gale G. A. RozgonyiJ. S. Harris B.-Y. TsaurH. hhiwara S. WangJ. M. Phillips

Special thanks are also due to Ms. Henrietta Weston and Ms. Cami Davis. It is throughtheir efforts that the symposium and the book have come to fruition. We would like to thankMs. Karen Martelli for her support in running the evening panel session.

It is our great pleasure to acknowledge with gratitude, the financial support provided bythe Air Force Office of Scientific Research (Dr. Kevin J. Malloy and Dr. Gerald L. Witt).






Report of Panel Session (April 17, 1986)

Future of GaAs on Si

Moderator: John C. C. Fan, Kopin Corporation, Taunton, MA

Panel Members:

M. Akiyama OKI ElectricJ. Goodman Stanford UniversityH. Kim Ford MicroelectronicsR. Koyama TriQuint SemiconductorH. Kroemer Univ. of California, Santa BarbaraH. Morkoc University of Illinois

There are a number of critical issues facing GaAs on Si technology. The panel sessionconsisted of leaders in the GaAs on Si community. Their viewpoints, shown in tabulated form,were presented for general discussion in the session which was attended by about 200 people.There is considerable excitement on the rapid progress in this technology, and all its potentialapplications. Major technological advances are still required before this technology will besuccessful.

xv i i






Que

stio

n 1

Wha

t ar

e th

e po

tent

ial

appl

icat

ions

of

GaA

s on

Si

in o

rder

of

impo

rtan

ce?

Ak

iyam

a

ICs

wit

h G

aAs

and

Si D

evic

es

GaA

s po

wer

dev

ices

Sola

r C

ells

Goo

dman

Opt

ical

Inte

rcon

nect

s

Mon

olit

hic

Mic

row

ave

Su

bst

rate

s

Mul

tifu

ncti

onSi

-GaA

sdi

gita

l ci

rcui

ts

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r C

ells

Kim

Dis

cret

es a

ndSm

all

Scal

eIn

terg

rate

d C

ircu

its

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er F

ET

s(m

icro

wav

e)

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itia

l In

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ated

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cuit

and

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olit

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row

ave

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grat

edC

ircu

it

Op

tica

l In

tegr

atio

n

Foc

al P

lan

eA

rray

Su

bst

rate

s

Kro

emer

Op

toel

ectr

onic

Inte

grat

ion

GaA

s/A

lGaA

sIC

s

Pow

er F

ET

s

Sola

r C

ells

Koy

ama

HE

MT

/Si

ICs

Het

eroj

un

ctio

nB

ipol

ar T

ran

sist

or/S

iIC

s

GaA

s/C

MO

S Si

ICs

III-

V E

lect

ro-O

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c/S

iIC

s

Mor

koc

Rep

lace

GaA

sS

ub

stra

tes

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rid

Dev

ices

for

Opt

ical

Det

ecto

rs a

ndD

isp

lays

Inte

grat

ed G

aAs

and

Si d

evic

es

Op

toel

ectr

onic

sin

Si






Que

stio

n 2

Wha

t ar

e th

e m

ajor

mat

eria

l pr

oble

ms

faci

ng G

aAs

on S

i, in

ord

er o

f im

port

ance

?

Aki

yam

a

Ten

sile

str

ess

(waf

er b

endi

ng,

crac

king

)

Def

ects

whi

ch a

reno

t in

dica

ted

byet

ch p

it de

nsiti

es

Dem

onst

ratio

n of

hig

h-qu

ality

opt

ical

dev

ices

and

ICs

Goo

dman

Ach

ieve

low

disl

ocat

ions

(<10

3cm

-2)

Obt

ain

good

unif

orm

ity

Min

imiz

e st

rain

Kim

Low

dis

loca

tion

dens

ity a

ndan

tiph

ase

dom

ain

Rep

rodu

cibl

elo

w-d

islo

catio

ngr

owth

Sem

i-In

sula

ting

epi

Hig

h-de

nist

y(L

SI)

dem

onst

rati

on

Scal

ing

up t

o6"

, 8"

Kro

emer

Thr

eadi

ngD

islo

catio

ns

Cro

ss-d

opin

g

Ant

i-Ph

ase

Dom

ain

Dir

ty S

iS

tart

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Surf

ace

Koy

ama

Dis

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/Def

ects

/Im

puri

ties

Stre

ss i

n th

e in

terf

ace

and

in b

ulk

epi

Uni

form

ity/

Rep

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the

epi

laye

rs

Prod

uce

4" o

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rger

waf

ers

Cos

t of

epi

Mor

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Mat

eria

ls q

ualit

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lati

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odi

sloc

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n an

d st

rain

cau

sed

byth

erm

al m

ism

atch






Que

stio

n 3

Wha

t ar

e th

e pr

opos

ed s

olut

ions

for

the

se m

ater

ials

pro

blem

s?

Aki

yam

a

Cla

rify

grow

th m

echa

nism

and

rela

tion

ship

bet

wee

ngr

owth

and

crys

talli

zatio

n

Sele

ctiv

e an

d/or

embe

dded

gro

wth

Goo

dman

Low

dis

loca

tion

solid

pha

se r

egro

wth

,su

per

latt

ice

buff

er

Stra

in-l

owgr

owth

tem

pera

ture

(pla

sma-

enha

nce

MO

CV

D)

Kim

Inte

nse

prod

uctio

nsc

ale-

upde

velo

pmen

t

R&

D in

gro

wth

kine

tics

for

the

grow

th s

yste

ms

Acc

umul

ate

mat

eria

ls a

ndde

vice

dat

a on

the

mat

eria

l

Kro

emer

Stra

ined

Lay

erSu

perl

atti

ces

(211

)

Eit

her

(211

) or

hig

hte

mpe

ratu

re a

nnea

lon

(10

0)

TL

C

Koy

ama

Gai

n E

xper

ienc

e

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OM

VPE

Mor

koc

Use

dis

loca

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cont

rol

tech

niqu

esan

d hi

gh-q

ualit

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ater

ials






Que

stio

n 4

Wha

t ar

e th

e de

vice

pro

cess

ing

prob

lem

s fa

cing

GaA

s on

Si,

in o

rder

of

impo

rtan

ce?

Aki

yam

a

Waf

er b

endi

ng

Goo

dman

Mai

ntai

nanc

eof

cir

cuits

duri

ng G

aAs

grow

th/d

evic

epr

oces

sing

Inhe

rent

ste

phe

ight

pro

blem

duri

ng G

aAs

and

Si d

evic

es

For

optic

alin

terc

onne

cts

over

com

e ba

sic

inco

mpa

tibili

tyof

opt

ical

and

elec

tron

icm

ater

ial r

equi

re-

men

ts

Kim

Ada

ptat

ion

ofpr

oces

sing

chem

istr

y, t

herm

altr

eatm

ent

com

patib

ility

Equ

ipm

ent

com

patib

ility

(han

dlin

g),

war

ping

, waf

erde

tect

ion

syst

em e

tc.

Ado

ptio

n/co

nver

sion

of la

rge

6M S

i lin

e in

to G

aAs

line

Kro

emer

Bui

lt-in

str

ain

duri

ng c

ool

dow

n

Cle

avag

e in

com

patib

ility

Pos

sibl

e in

com

patib

ility

with

MO

S

Koy

ama

Waf

er f

latn

ess

(<fe

w u

rn)

The

rmal

sta

bilit

yof

epi

und

erva

riou

s pr

oces

sco

nditi

ons

Uni

form

ityan

d re

prod

ucib

ility

Mor

koc

In a

ll as

pect

s G

aAs

on S

i mak

espr

oces

sing

sim

pler

For

hybr

id d

evic

es,

com

pute

r ch

ips,

need

to

mai

ntai

n th

e qu

ality

of

met

alliz

atio

n on

Si

duri

ng G

aAs

grow

th






Que

stio

n 5

Is G

aAs

on S

i te

chno

logy

rea

lly

need

ed?

If s

o, w

hen

will

it

be c

omm

erci

ally

ava

ilab

le?

Aki

yam

a

Yes

,GaA

s/Si

has

man

yad

vant

ages

(su

ch a

s hi

ghth

erm

al c

ondu

ctiv

ity,

larg

er w

afer

3-5

" in

size

, lig

ht w

eigh

t, et

c.)

Whe

n de

vice

pro

pert

ies

are

bett

er (

1990

?)

Goo

dman

Nee

d te

chno

logy

brea

kthr

ough

Kim

Yes

Rea

son:

Low

cost

(ne

arly

com

petit

ive

with

Si e

pi)

Eas

y to

sca

le u

p

Pot

enti

alre

duct

ion

in d

is-

loca

tions

and

pur

ity

Oth

er a

pplic

atio

nssu

ch a

s in

te-

grat

ed o

ptic

s an

dhi

gh p

ower

dev

ices

1987

-198

8

Kro

emer

Yes

, bu

t la

ter

than

you

and

I ho

pe

Koy

ama

GaA

s/Si

cou

ld n

otbe

cos

t ef

fect

ive

agai

nst

undo

ped

LE

C t

oday

for

com

mer

cial

ME

SFE

T's

The

rea

l ad

vant

age

may

be

for

hete

roju

nctio

nde

vice

s

Not

exp

ecte

d co

m-

mer

cial

ly b

efor

e2-

3 ye

ars

Mor

koc

Fir

st n

eed

is t

o re

plac

e G

aAs

and

InP

subs

trat

esfo

r co

mpo

und

sem

icon

duct

orde

vice

s, c

ircu

its a

ndlo

ng-w

avel

engt

h m

ater

ials

Shou

ld b

e av

aila

ble

in 2

-5 y

ears






heteroepitaxy on silicon -...

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