hfic chapter 9 hf mixer switch modulator design
DESCRIPTION
hf mixer switch modulator designTRANSCRIPT
1
HF mixer, switch & modulator design HF mixer, switch & modulator design
2
OutlineOutline
Mixer fundamentals & topologiesMixer fundamentals & topologies
Mixer design methodologyMixer design methodology
Example of up- and down-convert mixersExample of up- and down-convert mixers
SwitchesSwitches
Phase shifters Phase shifters
ModulatorsModulators
3
Mixer fundamentals (i)Mixer fundamentals (i)
The mixer is a multiplier used as a frequency The mixer is a multiplier used as a frequency translation device:translation device:
up-converter from IF to RFup-converter from IF to RF
down-converter from RF to IFdown-converter from RF to IF
Two input signals and one output signalTwo input signals and one output signal
Image frequency (undesired)Image frequency (undesired)
ω1
ω2
ω3
A cos1 t × B cos2 t =AB2
[cos1−2 tcos12 t ]
4
Mixer fundamentals (ii)Mixer fundamentals (ii)
Requires non-linear device:
diode,
HBT,
MOSFET
or time varying device (switch)
to generate "mixing" terms at sum and difference frequencies
Requires filtering at RF, LO and IF to select desired signal frequency
I V =IS[exp qVnKT −1 ]
iDS=
2[vGSt −VT ]
2
RFIF
LO
VBIAS
Lchoke
5
How do we get a non-linear deviceHow do we get a non-linear device
[ CSICS-2005 Primer Course]
6
Mixer fundamentals (iii)Mixer fundamentals (iii)Single-, two-port or three-port implementation
Present IC mixers use Gilbert-cell multiplication
ω1= ω
R F , ω
2= ω
L O and ω
1-ω
2= ω
I F
ω1= ω
Ι F , ω
2= ω
L O and ω
1+ω
2= ω
R F
A cos1 t Bcos2 t =AB2
[cos 1−2 tcos 12 t ]
VDD
LO+RF
IF
VDD
LO RF
IF
VDD
LO+
LO-
RF+
RF-
IF+
IF-
A
CQ
1
Q2
RL
QTAIL
RL
Q3
ITAIL
ITAIL
2iRF
ITAIL
2−iRF
Q'1
Q'2
Q'3
U
V
7
From CSICS-2005Primer Course
8
Mixer topology: Gilbert (multiplier) cellMixer topology: Gilbert (multiplier) cell
I=IQ2−IQ3=IQ1×tanh U/2VT
VDD
LO+
LO-
RF+
RF-
IF+
IF-
A
CQ
1
Q2
RL
QTAIL
RL
Q3
ITAIL
ITAIL
2iRF
ITAIL
2−iRF
Q'1
Q'2
Q'3
U
V
VDD
LO+
LO-
RF+
RF-
IF+
IF-
A
CQ1
Q2
RL
QTAIL
RL
Q3
ITAIL
ITAIL
2iRF
ITAIL
2−iRF
Q'1
Q'2Q'
3
U
V
9
Mixer specificationMixer specification
RF, LO, IF frequencies
Conversion (power) gain
Linearity
Noise Figure (receive mixers only)
Isolation
10
Conversion gainConversion gain
Conversion (power) gain (depends on LO power and mixing quad device type):
RF to IF in down-converters
IF to RF in up-converters
11
Gilbert-cell mixer conversion gainGilbert-cell mixer conversion gain
Output (IF) voltage in BJT mixer
Voltage conversion gain for large square wave LO signal is (valid for HBT & MOSFET):
v IF=−2 RL Ibias tanh vRF
2 V T tanh vLO
2 VT
v IF
vRF
=−2
gm RL
tanh VLOcosLO t = 4
cosLO t 4
3 cos 3LO t
45
cos 5 LO t . .
12
LinearityLinearity
Linearity: – depends on transconductor (input amplifier) linearity and V
DS/V
CE of mixing quad transistors.
The 1 dB compression point: P1dB
Third-order intercept point: IIP3, OIP3
Second-order intercept point: IIP2, OIP2
Linearity in a cascade of stages:
1IIP3
=1
IIP31
G1
IIP32
G1×G2
IIP33
...G1×G2×...Gn−1
IIP3n
13
Gilbert cell with degenerationGilbert cell with degeneration
Improves linearity
Inductive degeneration does not degrade noise figure
VDD
LO+
LO-
RF+
RF-
IF+
IF-
A
Q1
Q2
RL
QTAIL
RL
Q3
ITAIL
Q'1
Q'2
Q'3
RE
REC
VDD
LO+
LO-
RF+ RF-
IF+
IF-
A
CQ1
Q2
RL
QTAIL
LE
LE
RL
14
Noise FigureNoise Figure
Double-sideband noise figure
NFDSB
= NFSSB
-3dB (if no image rejection)
Single-sideband noise figure (temperature)
NFDSB
= NFSSB
(if image rejection )
FDSB=1⟨v nout
2 ⟩kT G1G2
FSSB=1⟨v nout
2 ⟩kT G1
+
TSSB
TS
TS
TOUT
IM
RF
IF
G1
G2
TDSBT
S
TS
TOUT
+T
DSB
IM
RF
IF
G1
G2
+
IM
RF
IF
G1
G2
15
Noise Figure (cont)Noise Figure (cont)
Mixer shot noise sources
@ DC
@ harmonics of LO (currents at LO harmonics comparable to DC currents).
0 3fosc
LO
Cur
rent
Freqfosc 2f
osc
⟨ in2⟩=2 q[
IDC˙ILO
˙I2LO
ILO IDC˙ILO
I2LO ILO IDC]×[
f LO−IF
f IF
f LOIF]
16
Noise Figure (cont.)Noise Figure (cont.)
Frequency translation of noise sources
Large signals at harmonics of LO,
Small signals on either side of LO harmonics,
Hence noise from nfLO
+/- fIF translates to IF and to
the output
0 3fLO Freq2f
LOf
LOIF
17
IsolationIsolation
Want it as high as possible
Implemented through choice of topology and/or filtering:
LO to IF
LO to RF
IF to LO
In Gilbert-cell mixer isolation is built-in
gmLO−IF=IQ1−IQ ' 1
2V T
×sech2 U2V T
≈0
18
Transmit (up-converter) mixer topologyTransmit (up-converter) mixer topology
Doubly balanced
MOS, BJT and BiCMOS
IF linear input amplifier + mixing quad
IF signal applied to bottom pair
LO signal applied to mixing quad
RF BPF (tuned) output at top
Image rejection must be placed after mixing quad or built into the topology
19
Receive (down-converter) mixer topologyReceive (down-converter) mixer topology
Doubly balanced
Good for MOS, BJT and BiCMOS
RF (low-noise) linear input amplifier + mixing quad
RF signal applied to bottom pair
LO signal applied to mixing quad
IF LPF output
LO and or RF trap at IF output
20
Receive (down-converter) mixer topologyReceive (down-converter) mixer topology
Image rejection must be placed before mixing quad or
built into the topology.
21
Improved-mixer topologiesImproved-mixer topologiesGilbert cell with transformer coupling of RF and IF signals: lower supply voltage but higher noise and conversion loss
Folded cascode Gilbert cell (lower supply voltage)
BiCMOS Gilbert cell with MOS input and HBT quad (better linearity, lower LO swing)
VDD
LO
RF
IF
VDD
VRF
LD
CD
LS
LD
Q1
Q2
LG
LS
LG
CD
LSS
CSS
RL
RL
VLO
Q3
Q4
Q5
Q6
VIF
22
mm-Wave image reject mixer topologiesmm-Wave image reject mixer topologies
Use 90o and 180o hybrid couplers.
90o coupler: Lange or branchline
180o coupler: ratrace (Marchand) balun
In-phase Wilkinson power splitter
00
900IN
I
Q
00
900
IN
Z0
+
I
Q
00
900
IN
Z0
[S]=−1
2 [0 j 1 0j 0 0 11 0 0 j0 1 j 0
]
23
From CSICS-2005Primer Course
24
909000 and 180 and 1800 h0 hybrid couplers (broadband)ybrid couplers (broadband)
Lange Coupler180o Ratrace Coupler
25
909000 phase shifter (lumped) phase shifter (lumped)
[ VOI+ , -
VOQ+ , -]=V i n× [
±s22
0
Qs−0
2
s220
Qs0
2
∓s2−20
Qs−0
2
s22
0
Qs0
2]
Q= L
CR
and 0=1
LC
C
C
L 2R
2RL
Vin+
Vin-
VOI+
VOI-
VOQ-
VOQ+
L=1.414k=0.707
CM
=1 CM
=1
CG=0.414C
G=0.414 C
G=0.414
0 =1
LC 1−k 2
C =C MC G , C M
C=k
Z 0 = LC
VIN
VCPL
VTHRU
VISO
26
Low noise mixer design methodology Low noise mixer design methodology (as for LNA) (as for LNA) (S. Voinigescu & M.Maliepaard, ISSCC-1997)(S. Voinigescu & M.Maliepaard, ISSCC-1997)
Bias @ minimum NF current density (if power gain is still
adequate at fosc
.
Size transistor for optimal noise resistance - active matching
"Source" impedance is the LNA output impedance
Add inductive emitter degeneration LE to meet linearity target
(more important than noise and conversion gain). MOSFET
input is more linear.
27
Low noise mixer design methodology (II)Low noise mixer design methodology (II)
If mixer is designed for noise matching to impedance Zo
then linearity is given by:
LO swing must be large enough to fully switch the
mixing quad, yet not too large to cause transistor
saturation. MOSFET quad is inferior to HBT quad due
to larger LO swing requirement.
IIP3∝gm Z0
2 f T
; where LE=Z0
2 f T
28
5-GHz single-chip SiGe radio 5-GHz single-chip SiGe radio (S.Voinigescu et al. IEEE MTT-S 1999)(S.Voinigescu et al. IEEE MTT-S 1999)
29
5-GHz single-chip SiGe radio 5-GHz single-chip SiGe radio
30
5-GHz SiGe Radio: Rx and TX linearity5-GHz SiGe Radio: Rx and TX linearity
31
mm-Wave Gilbert cell mixer examplesmm-Wave Gilbert cell mixer examples
3kΩ
50Ω
60nX48X1u
85nX120X1u85nX2X1u1pF
IFOUT
VCS
50Ω
100pH
30pH 30pH
VBIAS
60nX24X1u
140pH 140pH
60nX24X1u
140Ω 140Ω
4kΩ
4kΩ
2kΩ
50pH
50pH
45pH
45pH
VDD
RFIN
LOIN
71-95 GHz
140-GHz Down-Conversion Mixer140-GHz Down-Conversion Mixer
• Consumes 12 mA from 1.2V (14.4 mW)Consumes 12 mA from 1.2V (14.4 mW)
[S. Nicolson RFIC-08]
33
100-GHz IQ Down-Conversion Mixer 100-GHz IQ Down-Conversion Mixer
IF_QIF_I LO_QLO_I
RF
24mA, 29mW
[M. Khanpour, M.A.Sc. Thesis 2008IEEE Trans. MTT, Dec. 2009]
34
SwitchesSwitches
PIN and Schottky diodes, FETs
Ideally:
Ron
=0, Roff
= ∞, C=0
High isolation when off
low insertion loss when on
Topologies:
Shunt, series, series-shunt
Used as antenna switches
VCNTR
VCNTR
35
SwitchesSwitches
VCNTR
VCNTR
IL=−20⋅log101RSW
2Z 0
I=−20⋅log10 2RSW
2 RSWZ0
I=10⋅log10 [14 f CSW Z 0−2]
IL=10⋅log10 [1 f CSW Z 02]
36
CMOS mm-wave switch examples CMOS mm-wave switch examples
Out1
Out2
OutN
In
VC1
VC1
VC2
VC2
VCN
VCN
Out1
Out2
OutN
In
VC1
VC1
VC2
VC2
VCN
VCN
Out1
Out2
OutN
In
VCNTR
VCNTR
VCNTR
VCNTR
Binary-Weighted GeometryBinary-Weighted Geometry
Idea:Idea: Shared source and drain, segmented gates Shared source and drain, segmented gates
• varactor, PA varactor, PA (R.B. Staszewski, 2006)(R.B. Staszewski, 2006)
• transistor: digitally-controlled attenuatortransistor: digitally-controlled attenuator
• Gilbert-cell biased at constant JGilbert-cell biased at constant JDSDS
– digitally-controlled gain cells
– digitally-controlled phase shifters
– mm-Wave IQ DACs
S
0<VG
<1
b0, b
1, .. b
n =”0” or “1”
b0 b1
D
S
G0.2mA/µm
D
bn
Jopt
0/Jopt
Binary-Weighted Atten./SwitchBinary-Weighted Atten./Switch
38
CCOFFOFF = 1fF/ = 1fF/µµm, 42m, 42µµmm
RSHUNT=Runit
b0b12b222...bn−12n−1
IL=20⋅log1 Z0
2RSW=20log[1 25
Runitb0b1 2b2 22..bn−12n−1 ]
[A. Tomkins et al. CSICS-08]
b0 b1 b5
11µm 1µm 1µm
b0b1b5
11µm1µm1µm
L
39
IL<2 dB, ISOL>20dB up to 94 GHz
P1 d B
>+10dBm
Measurement ResultsMeasurement Results
40
Improving the CMOS switchImproving the CMOS switch
• Use deep N-well to reduce Use deep N-well to reduce
capacitance capacitance
• Use large resistor is series Use large resistor is series
with gate, substrate and n-with gate, substrate and n-
well to reduce loss and well to reduce loss and
improve linearityimprove linearity
• Stack transistors for Stack transistors for
improved linearityimproved linearity
VC N T R
RB
RN – W E L L
DeepN-WELL
RG
GND
IN OUT
p-well p-SUB
VC N T R
RB
RN – W E L L
DeepN-WELL
RG
IN OUT
p-well
VC N T R
RB
RN – W E L L
RG
GND
p-well
41
Phase shiftersPhase shifters
Each cell can be implemented as:
Switched line
Hybrid-coupled
Loaded line
High-pass low-pass
Can have analog or digital control
bo=(0,1)b
1=(0,1)b
2=(0,1)b
3=(0,1)
Vin
Vout
=Vine-j φ
=b0 22.50b1 4 50
b2 9 00b3 1800
00
900
l/2
l/2
l0
l0 + l
Port1 Port2
Port1
Port2
Port2Port1
-jB jB -jB jB
∆φ=βl
∆φ=βl
=2
=2
BN=BZ
0
λ/4
=2tan−1 BN
1−0.5 BN2
jX jX
-jX -jX
jB-jB
Port1 Port2
XN=tan
2 XN=XZ0
XN=XZ0
BN=sin
2
[S]PS=[ 0 e−j
e− j 0 ]
42
Cartesian and VGA-based phase shiftersCartesian and VGA-based phase shifters
00
900
+VCA
VCB
B
AI
Q
OUTIN
Z0
+VCA
VCB
B
A
OUT
IN
+VCA
VCB
B
A
OUT
IN
I
Q
φ
OUT=I jQ=∣OUT∣e j ∣OUT∣=I2Q2
=tan−1 QI
43
ModulatorsModulators
Require: phase shifters, hybrid couplers or isolators or a Gilbert cell
0-900
mod0-1800
mod
00
900
00
900
0-900
mod
0-1800
mod
0-1800
mod
0-1800
mod
900
00
900
0-1800
mod
0-1800
mod
a) b)
IN OUTIN OUT
OUTININ
OUT
b0b0
b0 b0
b1b1
b1
b1
44
Transformer-Coupled Gilbert Cell Transformer-Coupled Gilbert Cell
BPSK ModulatorBPSK Modulator MixerMixer
[A.Tomkins CICC-08] [A.Tomkins CICC-08] Xfmr coupling favoured over capacitor coupling
45
QPSK, m-ary QAM modulatorsQPSK, m-ary QAM modulators
VDD
OUT
QI
DataBIT1
DataBIT2
90 degree phase shifter
IN
b0 b1
I
Q
φ
1
2,
1
2
1
2,−1
2
−1
2,
1
2
−1
2,−1
2
aQ=I
T(Q)a
I=I
T(I)
Binary-weighted DAC/VGA Binary-weighted DAC/VGA V
DD
LO
bi
IB
LO
bi
Nf0=1
Nf1=2
Nf2=4
Nfn-1
=2n-1i=0..n-1
n
n n nn
OUT
Q1 Q2
Q3,4 Q5,6
W =W f 2n−1
• Binary-weighted or Binary-weighted or
segmented BPSK mods. segmented BPSK mods.
in parallelin parallel
• QQ3-63-6
binary-weighted gate binary-weighted gate
fingersfingers
• QQ1,21,2
biased at biased at 0.3 mA/0.3 mA/µµmm
• QQ3-63-6
switch from 0 to switch from 0 to
0.3mA/0.3mA/µµmm
• Load current, impedance Load current, impedance
remain constantremain constant
V OUT=g 'm W f Z L V LO∑i=0
n−1
−1bi 2i= f V LO×gw
mm-Wave IQ DAC/Phase Rotatormm-Wave IQ DAC/Phase Rotator
V OUT=g 'm W f Z L V IN [cos t ∑i=0
n−1
−1a i 2i jsin t ∑i=0
n−1
−1bi 2i]
VDD
OUT
QI
I Databits
Q Databits
90 degree phase shifter
IN
ai bi
I
Q
φ
IT
IT
[Eloranta et al, JSSC-07]
[S. Voinigescu IMS-08 Workshop]
48
SummarySummary
• Mixer performs the fundamental frequency translation Mixer performs the fundamental frequency translation
functionfunction
• Switches are critical building blocks for mixers, antenna Switches are critical building blocks for mixers, antenna
switches, phase shifters and modulatorsswitches, phase shifters and modulators
• Gilbert cell is the most common mixer topology todayGilbert cell is the most common mixer topology today
• Gilbert cell employed to realize VGA, modulators and Gilbert cell employed to realize VGA, modulators and
phase shiftersphase shifters
• Binary-weighted layout allows fine digital control/correction Binary-weighted layout allows fine digital control/correction
of all mm-wave blocks .of all mm-wave blocks .