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High Brightness EUV Light Source System Development for Actinic Mask Metrology
Peter Choi, Sergey V. Zakharov, Raul Aliaga-Rossel, Aldrice Bakouboula, Otman Benali, Philippe Bove, Michèle Cau,
Grainne Duffy, Carlo Fanara, Wafa Kezzar, Blair Lebert, Keith Powell, Ouassima Sarroukh, Luc Tantart,
Clement Zaepffel, Vasily S. Zakharov, Alan Michette*, Edmund Wyndham**
NANO‐UV sasEPPRA sas
* Dept of Physics, King’s College, London, UK** Pontificia Universidad Catolica de Chile
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
2
OUTLINE
• Remaining focus areas for EUVL deployment
• Plasma radiation sources for mask inspection
• Multiplexed source for high power & brightness• Nano-UV: EUV and soft X-ray source unit
– source characteristics– charge energy scan in comparison with predictions
• Multiplexed high brightness EUV sources – HYDRA4 ABI– HYDRA12 AIMS– HYDRA - APMI
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
3
EUV (13.5nm wavelength) lithographychosen for nano features microchip production
HP
EUV source for HVM & actinic mask inspection- a key challenge facing the industry
NOWEUV for
22 nm HVM
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
4
Remaining Focus Areas
- light source for Litho and mask inspection critical -
EUVL Symposium, Tahoe 2008 EUVL Symposium, Prague 2009
1 - Long-term source operation with 100 W at the IF and 5 megajoule per day
2 - Availability of defect-free masks, throughout a mask lifecycle, and the need to address critical mask infrastructure tool gaps, specifically in the defect inspection and defect review area
3 - …
1 - Mask yield & defect inspection/review infrastructure
2 - Long-term source operation with 115 W at the IF for 5mJ/cm2 resist sensitivity or with 200W at the IF for 10mJ/cm2 resist sensitivity
3 - …
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
5
Actinic Mask Inspection - key source requirements based on current studies
‐High‐brightness, small‐etendue, high‐repetition‐rate, and clean light source is preferable
Source Workshop 2009 Baltimore
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
6
10-5
10-4
10-3
10-2
10-1
100
101
102
10-9 10-7 10-5 10-3 10-1
R=0.04mmR=0.08mmR=0.16mmR=0.31mmR=0.625mmR=1.25mmR=2.5mmR=5mm
EUV
Rad
ianc
e, M
W/m
m2
sr
Mass Depth (rho*r), g/cm2
Multiplexing- a solution for high power & brightness
- compct physical size of SoCoMo ?
Z* Scan
tin• Small size sources, with low enough etendue
E1=AsΩ << 1 mm2 sr can be multiplexed.
• The EUV power of multiplexed N sources is
⇒ The EUV source power meeting the etendue requirements increases as N1/2
• This allows efficient re-packing of radiators from 1 into N separate smaller volumes without losses in EUV power
fNEPEUV ⋅⋅Ω⋅⋅∝ τ
• Spatial-temporal multiplexing: The average brightness of a source and output power can be increased by means of spatial-temporal multiplexing with active optics system, totallizing sequentially the EUV outputs from multiple sources in the same beam direction without extension of the etendue or collection solid angle
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
7
Nano-UV: Current Product Development
• Generic Source Products– high brightness unit source - CYCLOPS™ -B– high brightness multiplexed source - HYDRA™ -B– high power multiplexed source - HYDRA™ -P
• Research Metrology Products– Nano-patterning Resists Exposure Tool - GeNI™– Soft X-ray In Vitro Microscope - McXI™– EUV Mask Inspection Microscope - McEUVI™
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
8
DischargeVoltage
EUV diode
Spot-scan spatial profile ⇒
Nano-UV: High Brightness EUV Sourcemicro-plasma pulsed capillary discharge
GEN-II CYCLOPS™ cellsTypical Operating Conditions & Measured Performance
• use SXUV20 Mo/Si filtered diode (IRD)• 3 nm EUV band (12.4 nm -15.4 nm)• (110 nm) Al on Si3N4 (50 nm) to reject OoB• discharge in He/Ar & He/Ar/Xe admixture• electrical stored energy 0.2-0.4 J• 21 - 25 kv, 1-3 kHz operation• radiation pulse < 40 ns• irradiance measured at different distances • EUV power at beam spot - > 3 W at 1 kHz• plasma can be optimized for high power or high
irradiance• typical etendue 5.10-3 to 1.10-2 mm2.sr
0 5 10 15 20 25 30 35 40 450
100
200
300
400
500
600
Data: Data1_MaxpulseModel: Gauss Chi^2/DoF = 570.50661R^2 = 0.97744 y0 9.64813 ±4.68332xc 21.54925 ±0.11167w 8.27341 ±0.25284A 4791.85297 ±152.17737
Maxpulse B
Pho
todi
ode
sign
al (m
V)
Distance (mm)
V=25.4kV ( 1.24nF)HIGH POWER
ModeIrradiance
3.5 W/cm2 at 50 cm from
plasma sourceDelivered
Power is 3.9 W over a 16 mm spot @ 1 kHz
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
9
Source Characteristics I- irradiance vs stored energy• Measurement parameters
- Average mode over 128 shots:- 1.6mm diameter capillary- working pressure P =20mtorr- He:Ar:Xe mixture- distance between diode and the
capillary=50cm- operating frequency = 1 kHz- diode quantum efficiency @ 13.5nm=1.4e/ph- diode filter transmission band = 3nm
(12.4-15.4nm)
0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.320.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Irr
adia
nce
at th
e pr
ofile
max
imum
(x
10e
17 p
h/cm
2/s)
Stored energy (J)
0
50
100
150
200
250
0 100 200 300 400 500
In-b
and
EUV
ener
gy p
er s
hot,
mJ
Stored energy, mJ
EU
V e
nerg
y pe
r sho
t, μ
J
Energy scan calculated
(in 2% band)
Energy scan experiment
(in 3nm band)
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
10
Source Characteristics II- etendue and power• Optimization Measurements
- filtered IRD diodes on translation stages at 3 axial positions from the radiation source
- transverse scan to obtain radiation profile and irradiance
- Gaussian envelope fit to calculate power- use 1/e2 beam spot diameter measured and
beam expansion angle to estimate etendue- 21 kV operation at 1 kHz, He-Ar admixture- at 62 cm
75cmCyclops
1
32
0 5 10 15 20 25 30 35 40 45 500.0
0.5
1.0
1.5
2.0
2.5
3.0
Data: A62cm_MaxpulseModel: Gauss Chi^2/DoF = 21388.44238R^2 = 0.95841 y0 -11.405±33.02329xc 30.71325 ±0.12772w 4.98339 ±0.25861A 15674.94487 ±809.61347
Maxpulse B
Pho
todi
ode
sign
al (V
)
Distance (mm)
FWHM 5.8mm
Diode signal at peak
400 450 500 550 600 650 700 750 800 8500
1
2
3
4
5
6
beam expansion Half angle =0.30°solid angle= 8.8e-5 sr
HWHM linear fit
Rad
ial d
ista
nce
(mm
)
Axial distance from the capillary (mm)-200 0 200 400 600
0.0
0.5
1.0
1.5
2.0
2.5
Average over 128 shotsV
break=21kV
@ 62 cm from source35mtorr (He:Ar)int(V(t)dt)= 127nVsτ=54nsNph=4.36 e17 ph/cm2/s
Phot
odio
de s
igna
l (V)
Time (ns)
Scanned signal profile HWHM obtained at 3 locations⇒ ⇒
• peak irradiance = 6.4 W/cm2
• power in spot = 2.2 W• beam FWHM = 5.8 mm• etendue < 7 E-3 mm2.sr (max)
radiation(3nm band)
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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Source Characteristics III- wavefront measurement
• EUV beam diameter d= 9.75 mm at R=1890 mm from source
• Beam divergence half angle 0.19°• Solid angle: Ω = 0.0345 msr
Derived wavefront166 nm RMS (12 λ) &
760nm PV (58 λ)
HASO™ X‐EUV Shack Hartmann wavefront sensor ‐ (manufactured by Imagine Optic)
1890 mm
HASO™EUV source
* With support of G. Dovillaire, E. Lavergne from Imagine Optic and P. Mercere, M.Idir from SOLEIL Synchrotron
Acquired image60s exposure,
source at 1 kHz
(peak to valley)
(root-mean-square deviation)
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
12
20 21 22 23 24 250.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
02-03-2010 03-03-2010
Pho
todi
ode
sign
al (V
)
Discharge voltage (kV)
EUV Source Product GEN II emission characteristic stability test
The emission-voltage discharge characteristic enables one to correct the radiation output level and to control the dose stability
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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HYDRA™-ABI - spatial multiplexing for blank inspection
• Design Specifications– 60 W/mm2.sr in‐band 2% EUV radiant brightness at the IF
– 0.6 W at the IF– etendue 10‐2 mm2.sr– source area ‐ 31 mm2 / TBD– optimized for mask blank inspection– 4x i‐SoCoMo™ units working at 3 kHz each
– no debris / membrane filter– close packed pupil fill
• Current Status– 4 units integration & characterization– single unit optimization– ML mirrors evaluation & modelling
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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HYDRA4-ABI™
- pupil arrangements
Source 1 only Source 2 only
Source 4 only Source 3 only
Each source turned on separately and aligned to a different corner
• Radiation observed on a fluorescent screen 70 cm downstream
ALL 4 Sources
All 4 sources aligned to a pointwithout use of any solid optical collector
25 mm
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Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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• Design Specifications – 100 W/mm2.sr in‐band 2% EUV brightness– 2.4W at the IF– etendue ‐ 2.4 10‐2 mm2.sr (50% fill pupil)– source area ‐ 4 mm2 / variable σ– optimized for aerial image measurements– 12x i‐SoCoMo™ units, 5 kHz working each– no debris / membrane filter– variable pupil fill and σ
• Current Status– system characterization– single unit optimization– ML mirrors modelling
curved ML
plane ML
HYDRA™-AIMS- spatial multiplexing with variable σ
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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HYDRA12-AIMS™
- prototype system
A EUV Source for Mask Metrology
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• 2 Cells operation simultaneously @ 20KV ; 1 KHz Operation• Alignment on SUXV 5 Photodiode • Intentionally off axis Cell 1
Photodiode
Pulse discharge
By intentionally off axis the beam light of cell 1 No impact on the Beam Light of Cell2
Multiplexing sources Choice is proven as agile approach to reduce cost
The Cross Talk Test
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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HYDRA™-APMI - unique temporal & spatial multiplexing
• Design Specifications – 1200 W/mm2.sr in‐band EUV radiant brightness– 2.4 W at the IF– etendue ‐ 2. 10‐3 mm2.sr– source area ‐ 20 mm2
– optimized for patterned mask inspection– 8x i‐SoCoMo™ units working at 3 kHz each– 24 kHz temporally multiplexed– no debris / membrane filter– Gaussian output spot
• Current Status– optics design & modelling– single unit optimization– mechanical design
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COPYRIGHT 2010 NANO‐UV
2010 International
Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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HYDRA™- metrology sources - ROADMAP
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Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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• Collaborators – Pontificia Universidad Catolica de Chile– RRC Kurchatov Institute, Moscow, Russia– Keldysh Institute of Applied Mathematics
RAS, Moscow, Russia – University College Dublin– King’s College London–
• Sponsors– EU & French Government– ANR- EUVIL– OSEO-ANVAR
• RAKIA
• EUV LITHO, Inc.
Acknowledgements
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Workshop on EUV
Lithography June 21-25
Maui, HI, USA
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A New Technical Capability Arising
HYDRA™
– Ultra high brightness– modular construction– small foot print– low cost of ownership– adaptable to user needs