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DIODE
HITACHI
February/2000Product Marketing Dept.Multi Purpose Semiconductor Business DivisionSemiconductor & Integrated Circuits, HITACHI Ltd.
Hitachi Diode Products
DIODE
HITACHI
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party′s rights, including intellectual property rights, in connection with use of the information contained in this document.2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3. Hitachi makes every attempt to ensure that its products are of high quality and reliability However, contact Hitachi′s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5. This product is not designed to be radiation resistant.6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7. Contact Hitachi′s sales office for any questions regarding this document or Hitachi semiconductor products.
DIODE
HITACHI
1. General Purpose Diodes
2. High-Frequency Diodes
Contents
DIODE
HITACHI
1. General Purpose Diodes
DIODE
HITACHI
Schottky-barrier diodes Wide lineup of low VF and high efficiency for the secondary power supply circuit
Switching diodes Wide lineup for various uses requiring high-speed switching, high voltage, etc. Ultra small UFP (1608) package added to the lineup
Zener diodes Wide lineup covering the voltage range for various uses Plug-in and surface mounted packages Lineup of diodes for surge absorption (two and four chips)
Features of Hitachi Diodes
1-1
DIODE
HITACHI
Diode Lineup (1)
Maximum ratings Characteristics
Application Package code Type No. VRM(V)
IO(A)
VF (V)(max)
IR (mA)(max)IF(A) VR(V)
HRW0202A 20 0.2 0.40 0.1 0.05 20
HRW0202B 20 0.2 0.40 0.1 0.05 20
Schottky-barrierdiode for rectifier MAPAK
HRW0203A 30 0.2 0.50 0.2 0.05 30
HRW0302A 20 0.3 0.40 0.3 0.1 20
HRW0502A 20 0.5 0.40 0.5 0.2 20
HRW0503A 30 0.5 0.55 0.5 0.05 30
HRW0702A 20 0.7* 0.43 0.7 0.2 20
HRW0703A 30 0.7* 0.50 0.7 0.1 30
* IF value
1-2
DIODE
HITACHI
HRU0103A 30 0.1 0.44 0.1 0.05 30
URP HRU0203A 30 0.2 0.50 0.2 0.05 30
HRU0302A 20 0.3 0.40 0.3 0.10 20
HRB0103A 30 0.1 0.44 0.1 0.05 30
CMPAK HRB0103B 30 0.1 0.44 0.1 0.05 30
HRB0502A 20 0.5 0.40 0.5 0.20 20
UFP HRC0103A 30 0.1 0.44 0.1 0.05 30
Diode Lineup (2)
1-3
Schottky-barrierdiode for rectifier
Maximum ratings Characteristics
Application Package code Type No. VRM(V)
IO(A)
VF (V)(max)
IR (mA)(max)IF(A) VR(V)
HRC0203A 30 0.2 0.52 0.2 0.01 30
DIODE
HITACHI
High-speed switching
Application Package code Main type No.Maximum ratings Characteristics
VF (V)(max) VRM (V) IO (A)
DO-35
MPAK
DO-41
1S2076A
HSM2836C/2838C
1SS82
1SS83
HSM83
HZU series
HZM-N series
HZS series
HZ series
HZ-L series
HZ-P series
60
80
200
250
250
0.15
1.0
MPAK
High-voltage switching DO-35
Voltage-compensationzener diode
General
High power
DO-35
MHD
MPAK
URP
0.1
0.8
1.0
1.2
0.2
0.2
0.1
HZU-LL series
1.2
HSU119/HSC119 80URP/UFP 0.1 1.2
Diode Lineup (3)
1-4
DIODE
HITACHI
Diode Lineup (4)
Application Package code Type No.Maximum ratings Characteristics
VRM (V) IO (A)
MPAKSystem protectionHSM126S
HSM107S
20
8 0.3
0.35
0.05
0.2
VF (V)(max)
1-5
DIODE
HITACHI
ESD (kV)
100
Fun
ctio
n ca
paci
ty (
pF)
10
1
10 15 20 25 30
HZM6.8FA
HZM6.2ZWA/FA
HZM6.8ZWA/FA
Extends lineup
: Corresponding products in N and R companies
Next development targetLow-leakageversion
'97/Shimo '98/Kami '98/Shimo '99/Kami '99/Shimo '00/Kami
Low capacity and high voltage
HZM6.2ZWA HZM6.8ZFA
Low capacity and high voltage process
PKG developmentsmaller with many pins UFP,CMPAK-5
Extension of lineup
Development of surge-protection-dedicated series HZU series, low-leakage version
Array with many chips
2-3pF x 20kV or more
Intensity of cost competition
VZ control lessDevelopment of numerous elements/chip structures
Low capacity and high voltage process
CMPAK-5 version
Development Map of Zener Diodes for the Protection of Electronic Circuits
1-6
DIODE
HITACHI
Lineup of Surge-Absorption Diodes (1)
Application Package code Type No.
Ratings Characteristics
Vz (V)Pd (mW)
200
25.1 to 28.9
Surgeabsorption
200
6.47 to 7.0
C(pF)(max)
ESD (kV)(min)
30
200 4.01 to 4.48 30
HZ6.2ZWA* 200 5.9 to 6.5
MPAK200 6.47 to 7.0 20
HZM6.8WA
HZM6.8ZWA*HZM27WA
HZM4.3FA
8.5
130
25(27)
150
13
30
MPAK-5
(27)
200 6.47 to 7.0 30
200 6.47 to 7.0 20
HZM6.8FA
HZM6.8ZMFA*
130
25
5.9 to 6.5200HZM6.2ZFA* 8.5 13
200
200
HZM7.5FA
HZM27FA
7.06 to 7.84
25.1 to 28.9
125 20
30
URP 200HZU6.2Z* 5.9 to 6.5 8.5
Remark
Two built-inchips
Four built-inchips
( ): Reference value
5.31 to 5.92200HZM5.6ZFA* 8.5 8
200HZU5.6Z* 5.31 to 5.92 8.5 8
200HZU6.8Z* 6.47 to 7.0 25 20
1-7
*Low Capacitance
DIODE
HITACHI
Application Package code Type No.
Ratings Characteristics
Vz (V)Pd (mW)
200
6.47 to 7.14Surgeabsorption
200
5.31 to 5.92
200 8.56 to 9.55
C (pF)(max)
ESD (kV)(min)
30
30
200 7.06 to 7.84 30
HZU5.1G 200
200
4.84 to 5.37
7.76 to 8.64
URP
200 5.86 to 6.53 30
200 9.45 to 10.55 30
HZU5.6G
HZU6.2G
HZU6.8G
HZU7.5G
HZU8.2G
HZU9.1G
HZU10G
30
30
30
Lineup of Surge-Absorption Diodes (2)
1-8
DIODE
HITACHI
CMPAK MPAK MPAK-5
35V70V (A) (B)
300V HSM83
General use 200mW HZM**NLow noise 150mW
Surge absorption200mW HZM**WA HZM**FA
Low capacity HZM**ZWA
URP
HSU119
HSU83HZU**HZU**LLHZU**G
UFP
HSC119
HZU6.2ZHZM**ZFA
HZM**FAHZM**ZFA
(A) HSB2838 HSB2836 HSB123HSB124S
(B) HSM2838C HSM2836C HSM123HSM124S HSM223C
HZM**WAHZM**ZWA
HSM83
HZM**N
Pin arrangement
Zener
Switching
Lineup of Surface-Mounted-Package Diodes
Pin connection
Zen
er
1-9
High-speedswitching
DIODE
HITACHI
Trend of Diode Packages
Countermeasures for high-density mounting
Long side (mm)
3.0
Sho
rt s
ide
(mm
)
2.0
1.0
5.0 4.0 3.0 2.0 1.0
LRP
SRP
URP
UFP
CMPAK
MPAK
LLD
1-10
DIODE
HITACHI
Application Package NEC Pd(mW) Toshiba Pd
(mW)Panasonic Rohm Hitachi Features of Hitachi products
Do-35 RD-E 500 05AZ 500 MA1000 500 HZ Standard DHD type
Do-34(MHD)
04AZ 400 MA4000 400 HZS Standard MHD typeGeneralpurpose
RD-ES 400 MTZ 500 HZS-N Compatible with RD-ES (NEC)
LLD RD-L 500* MA6000 500 RLZ 400 HZK LLD package of HZMPAK RD-M 200 02CZ 200 MA3000 200 HZM-N Three-terminal surface-mounted package
URP RD-S 200* 02DZ 200 MA8000 200 DTZ 200* HZU Two-terminal surface-mounted package
Do-35HZ-L
Noise of 1/3 to 1/10 that of HZHZ-LL
Low noise
Do-34(MHD)
RD-JS 400 04BZ 400 HZS-L Small package of HZ-LRD-HS 250 04DZ 250 HZS-LL Small package of HZ-LL
LLDRD-K 400 HZK-L LLD package of HZ-L
HZK-LL LLD package of HZ-LL
URP HZU-LL Two terminals, surface-mounted packageSurgeprotection
MPAK RD-MW 200 HZM-WA Two chips. Guaranteed against 30-kV surge voltage
MPAK4 HZM-FA Four chips Guaranteed against 30-kV surge voltage
Electricpower
Do-41 RD-F 1000 1AZ 1000 MA2000 1000 HZ-P Compatible with RD-F
Temperaturecompensation
Do-35 HZT
500
400
400
500
200*
200*
400
250400
250
400
250
150
200
200
800
400 7/33V is in lineup
* When mounted on the substrate
Wide lineup to support various applications
Note) See catalogues for details as the characteristics or package may be changed.
Appendix
Pd(mW)
Pd(mW)
Pd(mW)
Lineup of Hitachi's Zener Diodes
1-11
DIODE
HITACHI
2. High-Frequenc y Diodes
DIODE
HITACHI
Varicap Diodes High performance enabled by the development of a new process A process → B process is adopted Wide lineup of diodes for VHF/UHF tuners (standard band and wide band) and enrichment of UFP (1608) package products VCO and VCXO diodes that cover various frequency bands for telecommunication use are prepared
Schottky-Barrier Diodes Surface-mounted package lineup for balanced mixers and modulators (UFP, URP, MPAK, MOP, etc) Multi-diode chips (two diodes and four diodes) lineup
PIN diodes PIN-diode lineup suitable for small signal attenuator and antenna SW (surface-mounted package: UFP, URP, SRP, MPAK)
High-frequency Diode
2-1
DIODE
HITACHI
Diode Countermeasures for the Trend in Equipment
Field Application Equipment trend Diode countermeasures
Mob
ileco
mm
unic
atio
n
Cordless phonePagerCellularTransceiver
• Low-voltage drive Low power consumption• High frequency• Small size
Improved varicap diode characteristics (improved process) and multiple chips Expanded lineup of super ultra small package (1406)
TV/VCR tunerBS/CS tuner
• High performance• Small size• Adjustment-free tuner• Low tuning voltage
High capacity change ratio and low serial resistance Super ultra small package (1608) Reduces the characteristic dispersion in varicap diodes (through an improved process) Development of varicap diodes that cover VHF and UHF, respectively, at VT=10 V
Com
mon
Common• Small size• High reliability
Surface-mounted package and multiple chips Lineup of surge-protection devices
Tun
er
2-2
DIODE
HITACHI
Wafer process and high-frequency characteristics (TV/VCR tuners)
1997 1998 1999 2000
A-Process B-Process II
B-Process I
Rs(
Ω)
0.2
0.4
0.6
0.8
A-ProcessB-Process I
B-Process II0
10
20
30
Tun
ing
volta
ge (
V)
1997 1998 1999 2000
Varicap Diode (1)
2-3
DIODE
HITACHI
10 100
C1V(pF)
HVU17
HVC362HVC359
HVC355B
HVC350B
<A-Process>
<B-Process I>HVC376B
HVC375B
Cap
acity
cha
nge
ratio
(C
1V/C
3V)
HVC374B
HVC372B
1.0
2.0
3.0
4.0 <B-Process II>
Wafer process and high-frequency characteristics (VCO/VCXO)
2-4
Varicap Diode (2)
DIODE
HITACHI
Lineup
VCOVCXOTCXO
FunctionPackage code
UFP(1608)
URP(2125)
HVU355B
HVU17HVU350B
HVU359
HVC350B
HVC358BHVC359HVC362HVC365
HVC369B
HVC355B
HVC372B
HVC375BHVC376B
Tuning
HVU200AHVU316
HVU202A/202B
HVU306A/306BHVU300A/300B
HVU307
HVU363A/363B
HVC200AHVC202A/202BHVC300A/300BHVC306A/306B
HVC363A/363BHVU316
FunctionPackage code
UFP(1608)
URP(2125)
HVC317BHVC321B*
*Supports VT =10 V product: under development
HVC366
HVC374B
2-5
Varicap Diode (3)
HVC368B
DIODE
HITACHI
Cap
acita
nce
betw
een
pins
C (
pF)
Reverse voltage VR(V)
Voltage vs. capacitance (VCO/VCXO) Voltage vs. capacitance (VCO/VCXO)
0.1 1 100
10
20
30
40
50
60
HVU17
HVC362
HVU359 HVC359 HVC365
f=1MHz
Cap
acita
nce
betw
een
C (
pF)
Reverse voltage VR(V)
0.1 1 100
5
10
15
20
25
30f=1MHz
HVC369B
HVU355B HVC355B
HVC372B
HVU350B HVC350B
HVU351HVC351
HVC358B
2-6
Varicap Diode (4)
DIODE
HITACHI
Low noise (low NF)
High performanceHigh integration(Balanced mixer anddouble-balanced mixer)
Low conversion dissipation
Low capacitance between pins
Development of matched pairsand matched quads(Matched characteristics fortwo or four chips)
High forward current
Product trends (Small-signal diodes)
2-7
Schottky Diodes (1)
Market Needs Product Trends
DIODE
HITACHI
LineupMixer Detection switching
URPHSU88 10 15 0.8
HSM88AS 10 15 0.9
MPAK
HSM88ASR 10 15 0.9
HSM88WA 10 15 0.9
HSM88WK 10 15 0.9
MOP HSB88WS 10 15 0.9
Package Type No.Maximum ratings Characteristics
VR(V) IO(mA) C(pF)max
DO35 1SS106 10 30 1.5
1SS198 10 30 1.5MHD
MPAKHSM276S 3 30 0.9
HSM276SR 3 30 0.9URP HSU276 3 30 0.9
UFP HSC276 3 30 0.9
CMPAK4 HSB0104YP 40 100 20.0
Package Type No.Maximum ratings Characteristics
VR(V) IO(mA) C(pF)max
2-8
Schottky Diodes (2)
CMPAK HSB276S 3 30 0.9
UFP HSC88 10 15 0.9
DIODE
HITACHI
Results of characteristic evaluationof antenna-switching PIN diode
Dependence of TX-ANT insertiondissipation on forward current
Antenna switching circuit
Pin Di (1)
Pin
Di
(2)
RFC
ANT
TX RX
IF
λ/4
Zo=50 1/2
Features Low price Low dissipation High isolation Small package
Dependence of ANT-RX isolation on forward current
Isol
atio
n (d
B)
Forward current (IF(A))
0
10
20
30
40
50
60
70
10-5 10-4 10-3 10-2
f=900MHz
Inse
rtio
n di
ssip
atio
n(dB
)
Forward direction current IF (A)
0.1
1
10
10-4 10-3 10-2 10-1
f=900MHz
Two-signal third-order distortion intercept point
Out
put s
igna
l str
engt
h (d
Bm
)Input-signal electric power (dBm)
-60 -40 -20 0 20 40 60-60
-40
-20
0
20
40
60
Two-signal third-orderdistortion output
Basic wave
f=900MHz IF=10mA
IP=48dBm
2-9
PIN diode (1)
DIODE
HITACHI
Lineup
Type No. PackageHigh-frequency resistance (rf) Capacitance between pins (C)
Ω(max) Condition pF(max) ConditionHVC131 UFP 1.0 IF=10mA 0.8 VR=1V
HVC133 UFP 0.7 IF=2mA 1.0 VR=1V
HVU131 URP 1.0 IF=10mA 0.8 VR=1VHVU132 URP 2.0 IF=10mA 0.5 VR=1VHVU133 URP 0.7 IF=2mA 1.0 VR=1V
HVC132 UFP 2.0 IF=10mA 0.5 VR=1V
HVC134 UFP 2.0 IF=10mA 0.4 VR=1V
HVC136 2.0 IF=2mA 0.6 VR=1VUFP
2-10
PIN diode (2)
HVC135 UFP 0.9 IF=2mA 0.6 VR=1V
Pin Connection
DIODE
HITACHI
3.0
2.0
1.0
5.0 4.0 3.0 2.0 1.0
LRP
SRP
URP
UFP
CMPAK
MPAK
1006(Under development)
SFP(1406)
LLD
2-11
Trend of Diode Packages
Countermeasures for high-density mounting
Long side (mm)
Sho
rt s
ide
(mm
)
DIODE
HITACHI
Hitachi Diode Products
Publication Date: February, 2000Published by: Electronic Devices Sales & Marketing Grope Hitachi, Ltd.Edited by: Technical Documentation Grope Hitachi Kodaira Semiconductor Co., Ltd.
Copyright Hitachi, Ltd. 2000. All rights reserved. Printed in Japan
ADE-A08-005B(Z)