icieca 2014 paper 25
TRANSCRIPT
Design and analysis of vlsi
architecture using ambipolar
MISFETs
Presented by
Anjali Ashok K A
M.E. VLSI Design
VSB Engineering College
Karur
ABSTRACT
Organic and inorganic thin film
based transistor plays a major role
in future generation electronic
devices
Self-assembled monolayer organic
dielectric material Trichloro
(Octadecyl) Silane (TOS)
High- κ inorganic dielectric material
Zirconium dioxide(ZrO2)
Cont.
Silver (Ag) as the metal at the top of
the device as Source and Drain,
pursued by the stack of TOS and
ZrO2 as the Insulator
Ambipolar operation
Reduced power consumption
INTRODUCTION
Emergence of MOS technology
Difficulty in SiO2 gate oxide scaling
High dielectric-constant introduced
ZrO2
high dielectric constant
low leakage current
sol-gel technique - Zirconium (IV)
Prop oxide (2mL) in proper
proportion with Iso Propyl Alcohol
(9mL).
Acetyl acetone in Iso Propyl
Alcohol was used as a gelatine
agent.
Zirconia coated onto the glass plate
Poly ethylene terephthalate –to
reduce adhesion