ikw30n60t trenchstop series q - szlcsc.com

IKW30N60T TrenchStop Series q

Power Semiconductors 1 Rev. 2.1 Dev-04

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

• Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for :

- Frequency Converters - Uninterruptible Power Supply

• Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat)

• Positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code

IKW30N60T 600V 30A 1.5V 175°C K30T60 TO-247 Q67040S4717

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VC E 600 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C

IC 60 30

Pulsed collector current, tp limited by Tjmax IC p u l s 90 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 90

Diode forward current, limited by Tjmax TC = 25°C TC = 100°C

IF 60 30

Diode pulsed current, tp limited by Tjmax IF p u l s 90

A

Gate-emitter voltage VG E ±20 V

Short circuit withstand time1)

VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tS C 5 µs

Power dissipation TC = 25°C P t o t 187 W

Operating junction temperature T j -40...+175 Storage temperature T s t g -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

G

C

E

P-TO-247-3-1 (TO-220AC)



Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic IGBT thermal resistance, junction – case

R t h J C TO-247 0.80

Diode thermal resistance, junction – case

R t h J C D TO-247 1.05

Thermal resistance, junction – ambient

R t h J A TO-247 AC

40

K/W

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value Parameter Symbol Conditions

min. typ. max. Unit

Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=0.2mA 600 - - Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=30A

T j=25°C T j=175°C

- -

1.5 1.9

2.05

-

Diode forward voltage

VF VG E=0V, IF=30A T j=25°C T j=175°C

- -

1.65 1.6

2.05

-

Gate-emitter threshold voltage VG E ( t h ) IC=0.43mA, VC E=VG E

4.1 4.9 5.7

V

Zero gate voltage collector current

IC E S VC E=600V, VG E=0V T j=25°C T j=175°C

- -

- -

40 1000

µA

Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 100 nA Transconductance g f s VC E=20V, IC=30A - 16.7 - S Integrated gate resistor RG i n t - Ω Dynamic Characteristic Input capacitance C i s s - 1630 - Output capacitance Co s s - 108 - Reverse transfer capacitance C r s s

VC E=25V, VG E=0V, f=1MHz - 50 -

pF

Gate charge QG a t e VC C=480V, IC=30AVG E=15V

- 167 - nC

Internal emitter inductance measured 5mm (0.197 in.) from case

LE TO-247-3-1 - 7 - nH

Short circuit collector current1) IC ( S C ) VG E=15V, tS C≤5µs VC C = 400V, T j = 150°C

- 275 - A

1) Allowed number of short circuits: <1000; time between short circuits: >1s.



Switching Characteristic, Inductive Load, at Tj=25 °C


min. Typ. max. Unit

IGBT Characteristic Turn-on delay time td ( o n ) - 23 - Rise time t r - 21 - Turn-off delay time td ( o f f ) - 254 - Fall time t f - 46 -

ns

Turn-on energy Eo n - 0.69 - Turn-off energy Eo f f - 0.77 - Total switching energy E t s

T j=25°C, VC C=400V, IC=30A,VG E=0/15V, RG=10.6 Ω , Lσ

1 )=136nH, Cσ

1 )=39pF Energy losses include “tail” and diode reverse recovery. - 1.46 -

mJ

Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 143 - ns Diode reverse recovery charge Q r r - 0.92 - µC Diode peak reverse recovery current I r r m - 16.3 - A Diode peak rate of fall of reverse recovery current during tb

di r r /dt

T j=25°C, VR=400V, IF=30A, diF /dt=910A/µs

- 603 - A/µs

Switching Characteristic, Inductive Load, at Tj=175 °C


min. Typ. max. Unit

IGBT Characteristic Turn-on delay time td ( o n ) - 24 - Rise time t r - 26 - Turn-off delay time td ( o f f ) - 292 - Fall time t f - 90 -

ns

Turn-on energy Eo n - 1.0 - Turn-off energy Eo f f - 1.1 - Total switching energy E t s

T j=175°C, VC C=400V, IC=30A,VG E=0/15V, RG= 10.6 Ω Lσ

1 )=136nH, Cσ

1 )=39pF Energy losses include “tail” and diode reverse recovery. - 2.1 -

mJ

Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 225 - ns Diode reverse recovery charge Q r r - 2.39 - µC Diode peak reverse recovery current I r r m - 22.3 - A Diode peak rate of fall of reverse recovery current during tb

di r r /dt

T j=175°C VR=400V, IF=30A, diF /dt=910A/µs

- 310 - A/µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.



I C, C

OLL

ECTO

R C

UR

RE

NT

100Hz 1kHz 10kHz 100kHz0A

10A

20A

30A

40A

50A

60A

70A

80A

90A

TC=110°C

TC=80°C

I C, C

OLL

ECTO

R C

UR

RE

NT

1V 10V 100V 1000V0.1A

1A

10A

100A

10µs

1ms

DC

tp=2µs

50µs

10ms

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of

switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 10Ω)

Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V)

P tot, P

OW

ER D

ISSI

PATI

ON

25°C 50°C 75°C 100°C 125°C 150°C0W

40W

80W

120W

160W

I C, C

OLL

ECTO

R C

UR

RE

NT

25°C 75°C 125°C0A

10A

20A

30A

40A

50A

TC, CASE TEMPERATURE TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of

case temperature (Tj ≤ 175°C)

Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C)

Ic

Ic



I C, C

OLL

EC

TOR

CU

RR

EN

T

0V 1V 2V 3V0A

10A

20A

30A

40A

50A

60A

70A

80A

15V

7V

9V

11V

13V

VGE=20V

I C

, CO

LLE

CTO

R C

UR

RE

NT

0V 1V 2V 3V0A

10A

20A

30A

40A

50A

15V

13V

7V9V

11V

VGE=20V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic

(Tj = 25°C) Figure 6. Typical output characteristic

(Tj = 175°C)

I C, C

OLL

ECTO

R C

UR

RE

NT

0V 2V 4V 6V 8V0A

10A

20A

30A

40A

50A

25°C

T J=175°C

V CE

(sat

), C

OLL

EC

TOR

-EM

ITT

SAT

UR

ATIO

N V

OLT

AGE

0°C 50°C 100°C 150°C0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

IC=30A

IC=60A

IC=15A

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE Figure 7. Typical transfer characteristic

(VCE=10V) Figure 8. Typical collector-emitter

saturation voltage as a function of junction temperature (VGE = 15V)



t, SW

ITC

HIN

G T

IMES

0A 10A 20A 30A1ns

10ns

100ns

tr

td(on)

t f

td(off)

t, SW

ITC

HIN

G T

IMES

10Ω 20Ω 30Ω 40Ω

10ns

100ns

t r

td(on)

t f

td(off)

IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a

function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 10Ω, Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)

t, SW

ITC

HIN

G T

IMES

25°C 50°C 75°C 100°C 125°C 150°C10ns

100ns

t r

td(on)

t f

td(off)

V GE

(th),

GAT

E-E

MIT

T TR

SHO

LD V

OLT

AG

E

-50°C 0°C 50°C 100°C 150°C0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.max.

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a

function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG=10Ω, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA)



E, S

WIT

CH

ING

EN

ERG

Y LO

SSE

S

0A 10A 20A 30A 40A 50A0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

5.0mJ Ets*

Eoff

*) Eon and Ets include losses due to diode recovery

Eon*

E, S

WIT

CH

ING

EN

ERG

Y LO

SSE

S 0Ω 10Ω 20Ω 30Ω 40Ω

0.0m J

1.0m J

2.0m J

3.0m JE ts*

E off

*) E on and E ts include losses

due to diode recovery

E on*

IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses

as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 10Ω, Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)

E, S

WIT

CH

ING

EN

ERG

Y LO

SSE

S

25°C 50°C 75°C 100°C 125°C 150°C0.0mJ

0.2mJ

0.4mJ

0.6mJ

0.8mJ

1.0mJ

1.2mJ

1.4mJ

1.6mJEts*

Eoff

*) Eon and Ets include losses due to diode recovery

Eon*

E, S

WIT

CH

ING

EN

ERG

Y LO

SSE

S

300V 350V 400V 450V 500V 550V0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

E ts*

Eon*

*) Eon and E ts include losses

due to diode recovery

Eoff

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE Figure 15. Typical switching energy losses

as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG = 10Ω, Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 30A, RG = 10Ω, Dynamic test circuit in Figure E)



V GE, G

ATE-

EMIT

TER

VO

LTAG

E

0nC 30nC 60nC 90nC 120nC 150nC 180nC0V

5V

10V

15V

480V

120V

c, C

APAC

ITAN

CE

0V 10V 20V 30V 40V

100pF

1nF

C rss

C oss

C iss

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge

(IC=30 A)

Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)

I C(s

c), s

hort

circ

uit C

OLL

ECTO

R C

UR

REN

T

12V 14V 16V 18V0A

100A

200A

300A

400A

t SC, S

HO

RT

CIR

CU

IT W

ITH

STAN

D T

IME

10V 11V 12V 13V 14V0µs

2µs

4µs

6µs

8µs

10µs

12µs

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE Figure 19. Typical short circuit collector

current as a function of gate-emitter voltage (VCE ≤ 400V, Tj ≤ 150°C)

Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C)



Z thJ

C, T

RAN

SIEN

T TH

ER

MAL

RE

SIST

ANC

E

1µs 10µs 100µs 1ms 10ms 100ms

10-2K/W

10-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

Z thJ

C, T

RAN

SIEN

T TH

ER

MAL

RE

SIST

ANC

E 100ns 1µs 10µs 100µs 1ms 10ms100ms

10-2K/W

10-1K/W

100K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance

(D = tp / T) Figure 22. Diode transient thermal

impedance as a function of pulse width (D=tP/T)

t rr, R

EVER

SE

REC

OV

ERY

TIM

E

700A/µs 800A/µs 900A/µs 1000A/µs0ns

50ns

100ns

150ns

200ns

250ns

TJ=25°C

TJ=175°C

Qrr, R

EVE

RS

E R

ECO

VER

Y C

HAR

GE

700A/µs 800A/µs 900A/µs 1000A/µs0.0µC

0.5µC

1.0µC

1.5µC

2.0µC

TJ=25°C

TJ=175°C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as

a function of diode current slope (VR=400V, IF=30A, Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 30A, Dynamic test circuit in Figure E)

R , ( K / W ) τ , ( s ) 0.29566 6.478*10-2 0.25779 6.12*10-3

0.19382 4.679*10-4 0.05279 6.45*10-5

C 1=τ 1/R1

R1 R2

C2=τ 2/R 2

R , ( K / W ) τ , ( s ) 0.19517 1.079*10-1 60.26773 1.546*10-2

0.31252 2.297*10-3 0.22545 2.234*10-4 0.04916 7.5*10-6

C 1=τ 1 /R1

R1 R2

C 2=τ 2 /R2



I rr, R

EVE

RS

E R

ECO

VER

Y C

UR

REN

T

700A/µs 800A/µs 900A/µs 1000A/µs0A

5A

10A

15A

20A

TJ=25°C

TJ=175°C

dirr/

dt, D

IOD

E PE

AK

RAT

E O

F FA

LL

OF

REV

ER

SE

REC

OV

ERY

CU

RR

ENT

700A/µs 800A/µs 900A/µs 1000A/µs0A/µs

-150A/µs

-300A/µs

-450A/µs

-600A/µsTJ=25°C

TJ=175°C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current

as a function of diode current slope (VR = 400V, IF = 30A, Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=30A, Dynamic test circuit in Figure E)

I F, F

OR

WAR

D C

UR

REN

T

0V 1V 2V0A

10A

20A

30A

40A

50A

60A

70A

175°C

TJ=25°C

V F, F

OR

WAR

D V

OLT

AGE

0°C 50°C 100°C 150°C0.0V

0.5V

1.0V

1.5V

2.0V

30A

IF=60A

15A

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE Figure 27. Typical diode forward current as

a function of forward voltage Figure 28. Typical diode forward voltage as a

function of junction temperature



dimensions

symbol [mm] [inch]

min max min max

A 4.78 5.28 0.1882 0.2079

B 2.29 2.51 0.0902 0.0988

C 1.78 2.29 0.0701 0.0902

D 1.09 1.32 0.0429 0.0520

E 1.73 2.06 0.0681 0.0811

F 2.67 3.18 0.1051 0.1252

G 0.76 max 0.0299 max

H 20.80 21.16 0.8189 0.8331

K 15.65 16.15 0.6161 0.6358

L 5.21 5.72 0.2051 0.2252

M 19.81 20.68 0.7799 0.8142

N 3.560 4.930 0.1402 0.1941

∅ P 3.61 0.1421

Q 6.12 6.22 0.2409 0.2449

TO-247AC



Figure A. Definition of switching times

Figure B. Definition of switching losses

Ir r m

90% Ir r m

10% Ir r m

di /dtF

tr r

IF

i,v

tQS Q

F

tS

tF

VR

di /dtr r

Q =Q Qr r S F

+t =t tr r S F

+

Figure C. Definition of diodes switching characteristics

p(t)1 2 n

T (t)j

τ11

τ22

nn

τ

TC

r r

r

r

rr

Figure D. Thermal equivalent circuit

Figure E. Dynamic test circuit



Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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