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Asian Business Consortium | AJASE Aug 2014 Vol 3 Issue 8 Page 7 Implementation of Low Voltage RF MEMS Switch with Different Material for Reconfigurable Antennas Sardar Masud Rana 1 , Rashed Al Amin 2 , Md. Nasrul Hoque Mia 3 , Samioul Hasan Talukder 4 , Md. Anzan-Uz-Zaman 5 1,3,5 Institute of Electronics, Atomic Energy Research Establishment, Dhaka, Bangladesh 2,4 Department of EEE, University of Dhaka (Mymensingh Engineering College), Bangladesh ARTICLE INFO ABSTRACT Volume 3 Number 4/2014 Issue 8 DOI: 10.15590/ajase/2014/v3 Received: July 22, 2014 Accepted: August 15, 2014 Revised: August 20, 2014 Published: September 01, 2014 E-mail for correspondence: [email protected] RF MEMS technology can offer enhanced performance and have potential prerogatives over the conventional solid-state devices. RF MEMS Switches can be used because of their extensive electrical characterization in order to the dynamic response in low voltage. This paper presented an implemented design of a RF MEMS switch using ANSYS. After comparing Silicon, Gold and Aluminium material model, this paper also report the best RF MEMS switch model to achieve low voltage, switching frequency and low insertion loss. With applying same voltage on all models, this paper showed the Gold material model gives the most suitable result. Keywords: RF MEMS, ANSYS, Simple beam, Beam with meanders, Switch. Source of Support: Nil, Conflict of Interest: Declared. How to Cite: Rana SM, Amin RA, Mia MN, Talukder SH and Anzan-Uz-Zaman M. 2014. Implementation of Low Voltage RF MEMS Switch with Different Material for Reconfigurable Antennas Asian Journal of Applied Science and Engineering, 3, 7-12. This article is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License. Attribution-NonCommercial (CC BY-NC) license lets others remix, tweak, and build upon work non-commercially, and although the new works must also acknowledge & be non-commercial. INTRODUCTION icro Electro Mechanical Systems (MEMS) are the integration of mechanical elements, sensors, actuators and electronics on a common substrate using integrated circuit process sequences. The increasing demand for more flexible and low-power-consumption wireless systems which has generated the necessity for a technology that can fabricate with low temperature process, friendly with CMOS, SiGe or GaAs integration and reduce manufacturing factor with improve performance and M

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Page 1: Implementation of Low Voltage RF MEMS Switch with ...publicationslist.org/data/ajase/ref-9/AJASE 8.1.pdfVoltage RF MEMS Switch with Different Material for Reconfigurable Antennas Asian

Asian Journal of Applied Science and Engineering ISSN 2305-915X(p); 2307-9584(e)

Asian Business Consortium | AJASE ● Aug 2014 ● Vol 3 ● Issue 8 Page 7

Implementation of Low Voltage RF MEMS

Switch with Different Material for

Reconfigurable Antennas

Sardar Masud Rana1, Rashed Al Amin

2, Md. Nasrul Hoque Mia

3, Samioul Hasan

Talukder4, Md. Anzan-Uz-Zaman

5

1,3,5

Institute of Electronics, Atomic Energy Research Establishment, Dhaka, Bangladesh 2,4

Department of EEE, University of Dhaka (Mymensingh Engineering College), Bangladesh

ARTICLE INFO ABSTRACT Volume 3 Number 4/2014 Issue 8 DOI: 10.15590/ajase/2014/v3

Received: July 22, 2014 Accepted: August 15, 2014 Revised: August 20, 2014 Published: September 01, 2014 E-mail for correspondence: [email protected]

RF MEMS technology can offer enhanced performance and have potential prerogatives over the conventional solid-state devices. RF MEMS Switches can be used because of their extensive electrical characterization in order to the dynamic response in low voltage. This paper presented an implemented design of a RF MEMS switch using ANSYS. After comparing Silicon, Gold and Aluminium material model, this paper also report the best RF MEMS switch model to achieve low voltage, switching frequency and low insertion loss. With applying same voltage on all models, this paper showed the Gold material model gives the most suitable result. Keywords: RF MEMS, ANSYS, Simple beam, Beam with meanders, Switch.

Source of Support: Nil, Conflict of Interest: Declared.

How to Cite: Rana SM, Amin RA, Mia MN, Talukder SH and Anzan-Uz-Zaman M. 2014. Implementation of Low Voltage RF MEMS Switch with Different Material for Reconfigurable Antennas Asian Journal of Applied Science and

Engineering, 3, 7-12.

This article is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License. Attribution-NonCommercial (CC BY-NC) license lets others remix, tweak, and build upon work non-commercially, and although the new works must also acknowledge & be non-commercial.

INTRODUCTION

icro Electro Mechanical Systems (MEMS) are the integration of mechanical elements, sensors, actuators and electronics on a common substrate using integrated circuit process sequences. The increasing demand for more flexible

and low-power-consumption wireless systems which has generated the necessity for a technology that can fabricate with low temperature process, friendly with CMOS, SiGe or GaAs integration and reduce manufacturing factor with improve performance and

M

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Asian Journal of Applied Science and Engineering ISSN 2305-915X(p); 2307-9584(e)

Asian Business Consortium | AJASE ● Aug 2014 ● Vol 3 ● Issue 8 Page 8

reliability. MEMS for radio frequency (RF) applications have provided an opportunity to meet these requirements which is known as RF MEMS. Due to the ability of MEMS technology for the fabrication of electro-mechanical element in a single small device ranging from 1µm to 1cm MEMs devices are rapidly used for sensor, PIN diode and Ga As based FET switches. Aircraft-condition monitoring and distributed-satellite communication is the common applications of RF MEMS switches (Norvell, etl. 1999). Reconfiguring of antenna is achieved through changing its frequency, polarization or radiation characteristics by using Radio-Frequency Micro Electro Mechanical Systems (RF-MEMS), PIN Diodes, Reactors and FETs. The switches showed good actuation on 15-20 V which was observed in the experiment. According to bridge length such as 15 and 30 GHz,it is reported that the insertion loss better than −0.8 dB up to 30 GHz, and an isolation of - ̴ 40 dB at the resonant frequency. S.M. Rana et al. (2012) presented a RF MEMS model simulation with Silicon material. This paper presented two new ANSYS 3D simulation models by Gold and Aluminium material. After comparing these three material models with the same applied voltage from 3V to 7V it can be reported that, Gold material model provides the best suitable deflection. The dimensions of meanders beam for all models are 4 μm spacing, 4 μmwidths, 56 x 60 μm and 150 x 80 μm.

GEOMETRY OF THE BEAM AND METHODOLOGY

Two different types of model have been simulated in ANSYS. Simple beam and beam with meanders has been analyzed to investigate the stress, deflection, suspension and frequency. For both model, various applied voltage is performed. Rana et al. (2012) presented only Silicon material and beam with meanders for simulate RF MEMS switch but in this paper two different models andthreedifferent materials are considered. The geometry for the simple beam and beam with meanders has a height about 4µm, a gross length

of 300µm, a sequence length of 80µm×50µm and the microwave t-line has 56µm×60µm. the actuation pad is smaller than the beam, so the actuation pad from the anchor is positioned about 150 µm. For both model actuation voltage and with declining electrode position consequential pull-down voltage is around3Vto 7 V. To characterize the Silicon, Gold and Aluminium material; density, tensile strength, tensile yield strength, tensile ultimate strength, Young’s modulus, Poison ratio and Electrical conductivity properties have been considered. Simple beam and beam with meanders models are shown in Fig. 1 and Fig. 2.

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Asian Journal of Applied Science and Engineering ISSN 2305-915X(p); 2307-9584(e)

Asian Business Consortium | AJASE ● Aug 2014 ● Vol 3 ● Issue 8 Page 9

Fig. 1: Simple beam model geometry in ANSYS.

Fig. 1: Beam with meanders model geometry in ANSYS. Appling same voltage and pressure on both model the deflection of the RF MEMS switch model is shown in TABLE 1. Table 1: Deflection of the both model with applied voltage and pressure.

Beam type Voltage Deflection Pressure Deflection

Simple Beam 5 Volt 0.205µm 100 pa 0.120 µm

Beam with meanders 5 Volt 2.85 µm 100 pa 6.145 µm

It is seem from output deflection, the beam with meanders model is better than the simple beam model.

SIMULATION

Simple beam model and beam with meanders model has been conducted on ANSYS 3D work bench module. Each parts of the both beam model has been defined in work bench. After

designing the model, meshing has been performed using brick meshing method. For solution

the initial and boundary conditions have been defined on beam model. After the end parts of

the beam model fixed, the different voltage is applied on all material beam model t o study the deflection and stress distribution. The deflection for Silicon, Aluminium and Gold material

models are shown in Fig. 3 and Fig. 4 respectively.

Fig. 3: Deflection of Silicon material when 5V is applied.

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Asian Journal of Applied Science and Engineering ISSN 2305-915X(p); 2307-9584(e)

Asian Business Consortium | AJASE ● Aug 2014 ● Vol 3 ● Issue 8 Page 10

Fig. 4: Deflection of (a) Aluminium and (b) Gold material when 5V is applied. The equivalent stress for all material with respect to the different voltage is shown in Fig. 5 and Fig. 6 respectively.

Fig. 5: Equivalent stress of Silicon material when applied voltage is 5V.

Fig. 6: Equivalent stress of (a) Aluminium material when applied voltage is 4V and (b) Gold material when applied voltage is 5V.

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Asian Journal of Applied Science and Engineering ISSN 2305-915X(p); 2307-9584(e)

Asian Business Consortium | AJASE ● Aug 2014 ● Vol 3 ● Issue 8 Page 11

RESULTS AND DISCUSSION

Deflection and equivalent stress for all material models with respect to different voltage is shown in TABLE 2. Table 2: Deflection and equivalent stress for all material model with respect to voltage.

Applied Voltage (V)

Silicon

Aluminium Gold

Deflection (µm)

Equivalent Stress (Mpa)

Deflection (µm)

Equivalent Stress (Mpa)

Deflection (µm)

Equivalent Stress (Mpa)

3V 0.76 0.983 1.229 1.135 1.8 1.171

4V 2.85 2.0365 1.84 1.542 2.4 1.966

5V 2.8536 4.528 2.273 3.067 2.8 3.8073

6V 2.8611 3.157 3.015 3.588 3.2 3.899

7V 2.89 3.811 3.932 3.85 4.23 4.135

The output graph for deflection with respect to voltage is shown in Fig. 7.

Fig. 7: Applied voltage vs deflection graph for all material. The output graph for equivalent stress with respect to voltage is shown in Fig. 8.

Fig. 8: Applied voltage vs equivalent stress graph for all material. From the above result it is seem that, the suitable applied voltage for the RF MEMS switch is 5V.In addition, for 5V the deflection of silicon and Gold material is almost same but the spring constant and suspension of Gold material is better than Silicon (Rebeiz). So, it can be reported that the Gold material beam with meanders model is the most suitable model for RF MEMS switch.

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Asian Journal of Applied Science and Engineering ISSN 2305-915X(p); 2307-9584(e)

Asian Business Consortium | AJASE ● Aug 2014 ● Vol 3 ● Issue 8 Page 12

CONCLUSION

MEMS based switches are and very attractive because these are small in size, low cost, reliable, accurate and high performance. This paper presented an implemented design and analyzing result of RF MEMS switch. The best suitable deflection is 2.856µm and the equivalent stress is 3.067MPa is achieved in Gold material model. By using ANSYS simulation analysis for achieve low voltage, switching frequency, better suspension and low insertion loss it had been showed the Gold material beam with meanders model for 5V applied voltage is most suitable for RF MEMS switch.

REFERENCE

Amit Mehta, “Practical realization of dual S arm antenna for beam steering applications”, Journal of Zhejiang University SCIENCE A, November 2007, Volume 8, Issue 12, pp 1901-1904

B.R. Norvell, R.J. Hancock, J.K. Smith, M.L. Pugh, S.W. Theis, and J. Kviatkofsky, Micro Electro MechanicalSwitch (MEMS) technology applied to electronicallyscanned arrays for space based radar, IEEE Aerospace Conference, Aspen, CO 1999, pp. 239–247.

Chang won Jung, Ming-jer Lee, G. P. Li, and Franco De Flaviis,“Reconfigurable Scan-Beam Single-Arm Spiral Antenna Integrated With RF-MEMS Switches,” IEEE Transactions on Antennas and Propagation, vol. 54, no. 2, February 2006.

Christos G Christodolou, Youssef Tawk, Steven A Lane and Scott R Erwin," Reconfigurable antennas for wireless and space applications ", Proceedings of the IEEE, Volume 100 No .7 ,July 2012.

D. Peroulis, S. Pacheco, K. Sarabandi, L. P.B. Katehi, "MEMSDevices for High Isolation Switching and Tunable Filtering",2000 IEEE MTT-S Int. Microwave Symp. Dig., Boston, MIT, pp. 1217-1220, USA, June 2000.

Gabriel M. Rebeiz, “RF MEMS: Theory, Design, and Technology”, John Wiley & Sons, Inc, page 30-34. Greg H. Huff, and Jennifer T. Bernhard,“Integration of Packaged RF MEMS Switches With Radiation

Pattern Reconfigurable Square Spiral Microstrip Antennas” IEEE Transactions on Antennas and Propagation, vol. 54, no. 2, february 2006

J. B. Muldavin, G. M. Rebeiz, "30 GHz Tuned MEMSSwitches", 1999 IEEE MTT-S Int. Microwave Symp. Dig.,Anaheim, CA, pp. 1511-1514, USA, June 1999.

J. B. Muldavin, G. M. Rebeiz, "High-Isolation Inductively Tuned X-Band MEMS Shunt Switches", 2000 IEEE MTT-SInt. Microwave Symp. Dig., Boston, MIT, pp. 169-172, USA, June 2000.

J. Y. Park, G. H. Kim, K. W. Chung, J. U. Bu, "FullyIntegrated Micromachined Capacitive Switches for RFApplications", 2000 IEEE MTT-S Int. Microwave Symp. Dig., Boston, MIT, pp. 283-286, USA, June 2000.

J. Y. Qian, G. P. Li, F. De Flaviis, "A Parametric Model ofMEMS Capacitive Switch Operating at MicrowaveFrequencies", 2000 IEEE MTT-S Int. Microwave Symp. Dig.,Boston, MIT, pp. 1229-1232, USA,

June 2000. Madani, S. (2014). Effect of Different Parameters on Solar Pond Performance. Asia Pacific Journal Of

Energy And Environment, 1(1), 54-69. doi:10.15590/apjee/2014/v1i1/53746 N.Haider, DCaratelli & A.G.Yarovoy," Recent developments in

Reconfigurable & Multiband and Antenna technology", Microwave Sensing,Signal and Systems, Delft University of Technology, January 2013.

S. M. Rana, M. W. Ashraf, N. Afzulpurlkar, S. Tayyaba, C. Punyasai, “Simulation of Low Voltage RF MEMS Switch form Reconfigurable Antennas”, IEEE EDSSC, 2012.

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Asian Business Consortium | AJASE ● Aug 2014 ● Vol 3 ● Issue 8 Page 13

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