improved broadband matching bound

8
1 Improved Broadband Matching Bound Ding Nie, Member, IEEE, and Bertrand M. Hochwald, Fellow, IEEE Abstract—In radio-frequency systems where a load is driven by a source through a passive impedance matching circuit, the bandwidth over which match can be attained is limited. The Bode-Fano upper bound is often invoked to find this limit. We show that the bound is loose for some loads, and hence cannot be attained by any network. We present a simple method to improve the bound, and give conditions under which the improved bound is tight. The improved bound requires no additional assumptions or conditions beyond what is used for the Bode-Fano bound. Applications to analytical and numerical load models are demonstrated. Index Terms—Bandwidth, Bode-Fano bounds, lossless match- ing networks, Rouch´ e’s Theorem I. I NTRODUCTION When a radio-frequency (RF) source is used to drive a load whose impedance varies with frequency, an impedance matching network is generally used to facilitate power transfer between the two. However, a close match can generally be attained only over a limited bandwidth. One measure of the maximum achievable bandwidth is given by the Bode-Fano upper bound [1], [2]. This bound is calculated using the frequency characteristics of the load, and gives us the highest bandwidth achievable by any passive matching network. Since the introduction of the Bode-Fano bound, it has been extended in many ways, including for sources with frequency-dependent impedances [3]–[5], and for multiport systems where multiple loads are driven by multiple sources [6]–[9]. Recently, [10] showed that tighter bound than the original Bode-Fano bound can be obtained for some loads. Various methods are available to design two-port match- ing networks that have wide bandwidth, such as by using Chebyshev networks [2], [11]–[14] and numerical methods [15]–[22]. However, no method is guaranteed to achieve the bound. In fact, for some loads the bound is loose and cannot be achieved by any passive network. We extend the work in [10] and present a method to determine when the bound is loose. We then show how it may be improved (tightened), and give conditions under which this bound is tight. We employ a tool from complex analysis—Rouch´ e’s Theorem [23]. The reader may see the improved bound statement and steps for how to compute it in Sections III-C and III-D. The improved bound requires no additional assumptions or conditions beyond what is used for the Bode-Fano bound. D. Nie is with Apple Inc., Cupertino, CA 95014, USA (e-mail: [email protected]). B. M. Hochwald is with the Department of Electrical Engineer- ing, University of Notre Dame, Notre Dame, IN 46556, USA (e-mail: [email protected]). This work was supported, in part, by NSF grants CCF-1403458 and ECCS- 1509188. We illustrate the improved bound in two ways. First, we apply it to an analytical load model of a two-stage resistor- capacitor (RC) load. This load is a simple extension of the classical RC load that is commonly used to illustrate the Bode- Fano bound. We show that the Bode-Fano bound is loose in this example, and that the improved bound is actually one- third of the original bound. An example matching scheme is also presented to show that the improved bound is tight. Second, we apply the improved bound to a realistic load that is described numerically by its impedance as a function of frequency. The process of applying the bound to such a load requires fitting an equivalent circuit or rational model. The amount of improvement then depends on details of the resulting rational model. Section II summarizes the Bode-Fano bound, presents the conditions for achieving the bounds, and shows how to de- termine if the bound is loose. In Section III, we present the improved bound; the crux of the method is to apply Rouch´ e’s Theorem to show that one of the conditions for achieving the bound cannot be met in some cases. Analytical and numerical examples are presented in Section IV. Section V concludes. II. BODE-FANO BOUND A. System description We consider the RF system shown in Figure 1, where a dissipative load is driven by a source with real impedance Z 0 , the characteristic impedance of the system. Let S L (s) be the reflection coefficient of the load as a rational function of the complex frequency s = σ + , where σ and ω are real. S L (s) is obtained by extending the reflection coefficient of the load S L () as a function of the radian frequency ω to the whole complex plane. Mathematically, S L (s) can be thought of as the transfer function between the incident and reflected waves ae st and be st to and from the load (see Figure 1), which may have an exponentially increasing or decreasing component, where t represents time. Therefore, we have b(s)= S L (s)a(s). The impedance Z L (s) of the loads can be obtained by Z L (s)= Z 0 (1 + S L (s))/(1 - S L (s)). Many antenna and distributed-element loads do not have rational descriptions of their S-parameters for all frequency. In such cases, the non-rational description of the load must be approximated by a rational S L (s) over a frequency range of interest. We do not discuss the issue of rational approximation or calculation of the error tolerance herein since they are addressed extensively elsewhere. An early example is [24], and a summary of some practical techniques can be found in [25]. Other fields such as control engineering use rational fitting extensively [26]. We assume herein that a rational S L (s) has been chosen to adequately describe the load. A lossless two-port matching network is inserted to match the impedances between the source and the load, as indicated

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1

Improved Broadband Matching BoundDing Nie, Member, IEEE, and Bertrand M. Hochwald, Fellow, IEEE

Abstract—In radio-frequency systems where a load is drivenby a source through a passive impedance matching circuit, thebandwidth over which match can be attained is limited. TheBode-Fano upper bound is often invoked to find this limit.We show that the bound is loose for some loads, and hencecannot be attained by any network. We present a simple methodto improve the bound, and give conditions under which theimproved bound is tight. The improved bound requires noadditional assumptions or conditions beyond what is used forthe Bode-Fano bound. Applications to analytical and numericalload models are demonstrated.

Index Terms—Bandwidth, Bode-Fano bounds, lossless match-ing networks, Rouche’s Theorem

I. INTRODUCTION

When a radio-frequency (RF) source is used to drive aload whose impedance varies with frequency, an impedancematching network is generally used to facilitate power transferbetween the two. However, a close match can generally beattained only over a limited bandwidth. One measure of themaximum achievable bandwidth is given by the Bode-Fanoupper bound [1], [2]. This bound is calculated using thefrequency characteristics of the load, and gives us the highestbandwidth achievable by any passive matching network.

Since the introduction of the Bode-Fano bound, it hasbeen extended in many ways, including for sources withfrequency-dependent impedances [3]–[5], and for multiportsystems where multiple loads are driven by multiple sources[6]–[9]. Recently, [10] showed that tighter bound than theoriginal Bode-Fano bound can be obtained for some loads.

Various methods are available to design two-port match-ing networks that have wide bandwidth, such as by usingChebyshev networks [2], [11]–[14] and numerical methods[15]–[22]. However, no method is guaranteed to achieve thebound. In fact, for some loads the bound is loose and cannotbe achieved by any passive network.

We extend the work in [10] and present a method todetermine when the bound is loose. We then show howit may be improved (tightened), and give conditions underwhich this bound is tight. We employ a tool from complexanalysis—Rouche’s Theorem [23]. The reader may see theimproved bound statement and steps for how to compute itin Sections III-C and III-D. The improved bound requires noadditional assumptions or conditions beyond what is used forthe Bode-Fano bound.

D. Nie is with Apple Inc., Cupertino, CA 95014, USA (e-mail:[email protected]).

B. M. Hochwald is with the Department of Electrical Engineer-ing, University of Notre Dame, Notre Dame, IN 46556, USA (e-mail:[email protected]).

This work was supported, in part, by NSF grants CCF-1403458 and ECCS-1509188.

We illustrate the improved bound in two ways. First, weapply it to an analytical load model of a two-stage resistor-capacitor (RC) load. This load is a simple extension of theclassical RC load that is commonly used to illustrate the Bode-Fano bound. We show that the Bode-Fano bound is loose inthis example, and that the improved bound is actually one-third of the original bound. An example matching scheme isalso presented to show that the improved bound is tight.

Second, we apply the improved bound to a realistic loadthat is described numerically by its impedance as a functionof frequency. The process of applying the bound to such aload requires fitting an equivalent circuit or rational model.The amount of improvement then depends on details of theresulting rational model.

Section II summarizes the Bode-Fano bound, presents theconditions for achieving the bounds, and shows how to de-termine if the bound is loose. In Section III, we present theimproved bound; the crux of the method is to apply Rouche’sTheorem to show that one of the conditions for achieving thebound cannot be met in some cases. Analytical and numericalexamples are presented in Section IV. Section V concludes.

II. BODE-FANO BOUND

A. System descriptionWe consider the RF system shown in Figure 1, where a

dissipative load is driven by a source with real impedance Z0,the characteristic impedance of the system. Let SL(s) be thereflection coefficient of the load as a rational function of thecomplex frequency s = σ+jω, where σ and ω are real. SL(s)is obtained by extending the reflection coefficient of the loadSL(jω) as a function of the radian frequency ω to the wholecomplex plane. Mathematically, SL(s) can be thought of as thetransfer function between the incident and reflected waves aest

and best to and from the load (see Figure 1), which may havean exponentially increasing or decreasing component, wheret represents time. Therefore, we have b(s) = SL(s)a(s). Theimpedance ZL(s) of the loads can be obtained by ZL(s) =Z0(1 + SL(s))/(1− SL(s)).

Many antenna and distributed-element loads do not haverational descriptions of their S-parameters for all frequency.In such cases, the non-rational description of the load must beapproximated by a rational SL(s) over a frequency range ofinterest. We do not discuss the issue of rational approximationor calculation of the error tolerance herein since they areaddressed extensively elsewhere. An early example is [24],and a summary of some practical techniques can be foundin [25]. Other fields such as control engineering use rationalfitting extensively [26]. We assume herein that a rational SL(s)has been chosen to adequately describe the load.

A lossless two-port matching network is inserted to matchthe impedances between the source and the load, as indicated

2

0Z

Γ GS

Two-port matching network S

a

b

Load SLSS

Fig. 1. An RF system where a source with characteristic impedance Z0 drivesa load with reflection coefficient SL through a lossless two-port matchingnetwork with 2×2 S-matrix S (the complex-frequency argument s is omitted).Let a and b be the incident and reflected waves to and from the load. Thereflection coefficients seen from the input and output ports of the matchingnetwork are denoted as Γ and SG, respectively.

in Figure 1. We use S(s) to denote the 2 × 2 S-matrix ofthe matching network as a function of s, whose entries areSij(s) where i, j = 1, 2. Let Γ(s) be the reflection coefficientof the cascade of S(s) and SL(s), and SG(s) be the reflectioncoefficient seen from the output port of the matching network.It follows that SG(s) = S22(s), and

Γ(s) = S11(s) +S12(s)SL(s)S21(s)

I − SG(s)SL(s). (1)

Since the matching network is lossless, the incident powerto the network is either transferred to the load or reflectedback to the source. The matching between source and load ats = jω can therefore be measured by the return loss |Γ(jω)|.By definition, 0 ≤ |Γ(jω)| ≤ 1 where values close to zeroindicate that little power is being reflected and most of thesource power is being delivered to the loads. Generally, valuesclose to zero over a wide range of ω are preferred.

We use LHP to denote the left-half complex plane (Res <0) and RHP to denote the right-half (Res > 0). The jω axisis not included in either the LHP or the RHP. Because the loadis dissipative and the matching network is lossless, SL(s) andS(s) are real-rational, Hurwitzian, bounded, and S(s) is para-unitary; the definitions of these terms may be found readily in[27]–[29].

As a result of these properties, SL(s) and SG(s) are rationalfunctions of s, their poles are in the LHP, their poles and zerosare in complex conjugate pairs, and |SL(s)| < 1, |SG(s)| < 1for Res > 0. This latter property is especially important inour discussion. The poles and zeros of SL(s) are denoted pL,iand zL,i, i = 1, 2, . . ..

B. Bode-Fano bound statement

For a load SL(s), we assume that there exists an s0 withRes0 ≥ 0 or s0 =∞ such that

SL(−s0)SL(s0) = 1. (2)

Then [2] proves that the following inequality holds for anylossless matching network:∫ ∞

0

f(ω) log1

|Γ(jω)|dω ≤ B, (3)

where the functional forms of f(ω) > 0 and B > 0 dependon s0; see Table I. Equality in (3) holds if and only if thefollowing Conditions are satisfied simultaneously:

TABLE IFORMS OF f(ω), B AND g(z) FOR DIFFERENT LOCATIONS OF s0 .

s 0=jω

0 f(ω) = 12

[(ω0 − ω)−2 + (ω0 + ω)−2]

B = −π2

[∑i(pL,i − jω0)−1 +

∑i(zL,i + jω0)−1

]g(z) = −π

2

[(z − jω0)−1 + (z + jω0)−1

]

Res 0>

0 f(ω) = 12

Re[(s0 − jω)−1 + (s0 + jω)−1]

B = −π2

log∣∣∣detSL(s0) ·

∏i(s0+zL,i)∏i(s0−zL,i)

∣∣∣g(z) = −π

4log∣∣∣ (s0+z)(s0+z∗)(s0−z)(s0−z∗)

∣∣∣

s 0=∞

f(ω) = 1

B = −π2

(∑i pL,i +

∑i zL,i

)g(z) = −πz

1) SL(s0)SG(s0) 6= 12) SL(s)− SG(−s) has no zeros in the LHP

These Conditions are discussed in detail in Section III.The physical meaning of the assumption (2) is most eas-

ily understood when s0 = jω0 (Res0 = 0). BecauseSL(−jω0) = S∗L(jω0), where ∗ represents complex conju-gation, it follows from (2) that |SL(s0)| = 1. Thus, s0 is afrequency where the load reflects all incident energy. Theremay be multiple such s0. We simply assume there is at leastone.

C. Discussion of bound

As shown in [2], the Bode-Fano bound is the result of theinequality∫ ∞

0

f(ω) log1

|Γ(jω)|dω ≤ B −

∑i

g(zi), (4)

where zi, i = 1, 2, . . . are the LHP zeros of SL(s)−SG(−s),and g(z) > 0 is given in Table I. Equality in (4) holds if andonly if SL(s0)SG(s0) 6= 1.

Since g(zi) depends on zi, which depends on the matchingnetwork, the right hand side of (4) depends on the choiceof network. Setting

∑i g(zi) = 0 yields (3), which is inde-

pendent of the matching network and therefore holds for anynetwork.

The bound requires a rational SL(s). To apply the bound toloads whose frequency response is obtained from either mea-surements or simulations, a rational function approximation isneeded. This approximation can be obtained as follows:

a) Measure or simulate the S-parameter of the load in somefrequency range ω ∈ [ω1, ω2]. Denote the response asS′L(jω).

b) Find a passive rational SL(s) such that |S′L(jω)−SL(s)|is within an error tolerance for s = jω and ω ∈ [ω1, ω2].

Step a) can be done with standard modeling software such asAnsys HFSS in the case of simulations, or a network analyzerin the case of measurements. Step b) can be accomplished byfinding rational approximations to S′L(jω) using, for instance,the Matrix Fitting Toolbox [30]–[34] in MATLAB. A studyof the accuracy of approximation and its effect on the boundcalculation can be found in [9], and is omitted here.

3

(a) (b)

C C C0Z

0Z 0Z

Fig. 2. (a) Classical circuit-model of a load consisting of a capacitor Cin parallel with the characteristic impedance Z0. (b) Simple extension of theload in (a) to two cascaded RC stages.

D. Canonical application

We briefly describe a canonical application of the boundthat we carry forward to the next section and the improvedbound. For a load that is a perfect reflector at s0 =∞, takingf(ω) = 1 from Table I (third row) and calculating (3) obtains∫ ∞

0

log1

|Γ(jω)|dω ≤ B = −π

2

(∑i

pL,i +∑i

zL,i

). (5)

It is typically desired to create a matching network operatingover some band ω ∈ [ω1, ω2]. Since 0 ≤ |Γ(jω)| ≤ 1,and therefore f(ω) log(1/|Γ(jω)|) ≥ 0, then constraining therange of integration in (5) gives∫ ω2

ω1

log1

|Γ(jω)|dω ≤ B (6)

For a matching circuit where |Γ(jω)| ≤ τ for ω ∈ [ω1, ω2],where τ is typically a small value that represents the maximumdesired reflection in the band of interest, (6) yields

ω2 − ω1 ≤−π2 (

∑i pL,i +

∑i zL,i)

log(1/τ).

For s0 6= ∞, other bandwidth bounds can be obtained using(3). We refer the reader to [2].

A circuit-model load often used to exemplify the bound isshown in Figure 2(a) consisting of a capacitor C in parallelwith the characteristic impedance Z0. From this model, theimpedance of the load is ZL(s) = Z0/(Z0Cs+ 1). Therefore

SL(s) =ZL(s)− Z0

ZL(s) + Z0=−Z0Cs

Z0Cs+ 2. (7)

Following the steps for calculating the bound, we obtain s0 =∞, pL,1 = −2/(Z0C) and zL,1 = 0. Hence, the bound forthe single-stage RC load is

B1 =π

Z0C. (8)

(We use the subscript “1” to refer to the single-stage.)We contrast this result with the load shown in Figure

2(b) comprising two cascaded identical RC structures. Thereflection coefficient of the load is

SL(s) =−Z2

0C2s2 − 2Z0Cs+ 1

Z20C

2s2 + 4Z0Cs+ 3. (9)

Similarly to the load in Figure 2(a), this load satisfies (2) ats0 =∞. Solving for the poles and zeros of SL(s) yields

pL,1 = − 3

Z0C, pL,2 = − 1

Z0C, zL,1, zL,2 =

−1±√

2

Z0C

The bound for this load is then

B2 =3π

Z0C. (10)

Because (10) is three times larger than (8), it would appearthat the bandwidth achievable with the load model in Figure2(b) is three times larger than Figure 2(a). As we show,however, their achievable bandwidths are actually equal, andthe improved bound reveals this.

III. IMPROVED BOUND

The derivation of the Bode-Fano bound in (3) relies onreplacing the non-negative term

∑i g(zi) in (4) that depends

on the matching network with zero. An improved bound thatapplies to all matching networks can therefore, in principle, beobtained by replacing

∑i g(zi) instead with a positive value,

provided that this value is also independent of the matchingnetwork. We find such a value by a careful examination of theconditions for achieving equality in (3).

A. Condition 1 for equality can always be met

Condition 1 is a “non-degenerate” condition described indetail in [2]. It turns out that Condition 1 is superfluous whenRes0 > 0 because SL(s) and SG(s) are bounded functions;hence SL(s)SG(s) is also bounded and |SL(s0)SG(s0)| < 1for Res0 > 0. However, for other values of s0, this conditionneeds to be checked.

In the RC example in Figure 2(a), SL(s) is reflective ats0 = ∞ because the load is capacitive relative to groundand presents a short circuit as the frequency tends to infinity(SL(∞) = −1). In order for Condition 1 to hold, we needto make sure that SG(∞) 6= −1. Because SG(s) representsthe reflection coefficient seen from the output of the matchingnetwork (see Figure 1), Condition 1 is satisfied if the outputport of the matching network is not also a short at s = ∞.Since this is a constraint on the matching network at a singlefrequency, it can generally be met with little effort.

For example, setting SG(s) = 0 (direct connection of sourceand load without intervening matching network), achievesCondition 1. As we show in the next section, SG(s) = 0 alsoachieves Condition 2 for the circuit in Figure 2(a). However,this is not the case for the circuit in Figure 2(b).

B. Condition 2 for equality cannot always be met

Condition 2 is referred to as a “minimum-phase” condition[35] because if there are no LHP zeros of SL(s) − SG(−s),then there are no RHP zeros of SL(−s)−SG(s), which impliesthat there are no RHP zeros in the lossless equivalent circuitof the load; see [9]. Compared with Condition 1, the physicalmeaning of Condition 2 is less clear and designing matchingnetworks to satisfy this condition is not trivial.

For the load in Figure 2(a), from (7) we see that SL(s)has a single zero at zL,1 = 0, and no zeros in the LHP.Hence, Condition 2 is trivially satisfied for SG(s) = 0. Thus,Conditions 1 and 2 are satisfied and equality in (8) can beachieved without a matching network. However, if desired,

4

Res

Ims

−4 −3.5 −3 −2.5 −2 −1.5 −1 −0.5 0 0.5 1−1

−0.8

−0.6

−0.4

−0.2

0

0.2

0.4

0.6

0.8

1PolesZeros

Fig. 3. For the two-stage RC load in Figure 2(b) with SL(s) in (9), the|SL(s)| = 1 curves are plotted over the s-plane and the |SL(s)| < 1 regionsare filled with green. The set of points inside the closed |SL(s)| = 1 contourin the LHP is denoted as Ω1. The poles and zeros of SL(s) are markedrespectively by crosses and circles; among them, zL,1 is located in Ω1. Apentagram is used to denote z1 defined in (14).

matching networks such as Chebyshev networks [2], [11]–[14], can be used to shape the frequency response of the loadand still achieve equality.

For the load in Figure 2(b), the situation changes, andCondition 2 cannot be met by any lossless matching network.We use Rouche’s Theorem [23] to explain why. This theoremsays that if functions f1(s) and f2(s) are analytic on someregion Ω of the complex plane whose boundary contour is ∂Ω,with |f2(s)| < |f1(s)| on ∂Ω, then f1(s) and f1(s) + f2(s)have the same number of zeros in Ω, where each zero iscounted as many times as its multiplicity.

Let f1(s) = SL(s) and f2(s) = −SG(−s). For the circuit-model of Figure 2(b), Figure 3 plots |SL(s)| = 1 contoursfor (9) over the s-plane. We see that there exists a singleclosed |SL(s)| = 1 contour contained in the LHP, denoted ∂Ω1

and whose interior is denoted Ω1. Moreover, zL,1 = −(1 +√2)/(Z0C) is in Ω1. Since SG(s) is a bounded function, we

have |f2(s)| < 1 for s in the LHP, and since ∂Ω1 is containedin the LHP, |f2(s)| < 1 for s ∈ Ω1∪∂Ω1. Hence, |f2(s)| <|f1(s)| = 1 for s ∈ ∂Ω1, and Rouche’s Theorem indicatesthat f1(s) + f2(s) = SL(s) − SG(−s) has the same numberof zeros for s ∈ Ω1 as f1(s) = SL(s). Since SL(s) has onesuch zero, this means SL(s)−SG(−s) also has a zero in Ω1,no matter what SG(s) is. Therefore, Condition 2 cannot bemet for any lossless matching network.

This example shows not only that SL(s)− SG(−s) alwayshas a zero in the LHP, but this zero must lie in Ω1. We mayextend and generalize this analysis for any load to improvethe original Bode-Fano bound.

C. Improved bound statement

Let SL(s) denote the reflection coefficient of the load as arational function of complex frequency s. Assume that there

exists an s0 with Res0 ≥ 0 or s0 =∞ such that

SL(−s0)SL(s0) = 1. (11)

Denote ∂Ω as any closed contour (with interior Ω) that isobtained by solving |SL(s)| = 1 and is contained entirelyin the LHP. Let zL,i be a zero of SL(s) that is contained insome Ωi, and enumerate all such zeros zL,1, . . . , zL,` and theircorresponding Ω1, . . . ,Ω`. Then∫ ∞

0

f(ω) log1

|Γ(jω)|dω ≤ B′ (12)

where

B′ = B −∑i=1

g(zi) (13)

zi = arg minz∈Ωi

Reg(z), (14)

Γ(jω) is the reflection coefficient of the cascaded matchingnetwork and load defined in (1), and f(ω), B, and g(z) arecalculated using Table I.

Since B and zi depend only on SL(s), (12) applies to anymatching network. Equality in (12) holds if and only if thefollowing two Conditions hold:

1) SL(s0)SG(s0) 6= 12′) SL(s)− SG(−s) has ` LHP zeros z1, . . . , z`.

Condition 1 and (11) are similar to requirements needed for theBode-Fano bound in Section II-B. Condition 2′ differs fromCondition 2 for the original bound.

D. Discussion of improved bound

The minima in (14) can be readily computed be-cause Ω1, . . . ,Ω` are surrounded by the closed contours∂Ω1, . . . , ∂Ω` in the LHP, and either analytical or numericalmethods can be used.

The complete steps for computing the bound are summa-rized as follows:

1) Find an s0 where (11) is satisfied for SL(s).2) Calculate the poles and zeros pL,i, zL,i of SL(s), and B

from Table I.3) Find all LHP closed contours where |SL(s)| = 1. Denote

any that contain zL,i as ∂Ωi. If there are no such ∂Ωithen B′ = B.

4) Otherwise calculate zi and g(zi) using (14).5) Calculate the improved bound B′ in (13).

Steps 1 and 2 are used to calculate the original bound in(3), while Steps 3 and 4 improve the bound. Step 3 can bedone graphically by drawing the contours |SL(s)| = 1 andexamining if any zeros of SL(s) are enclosed.

E. Derivation of bound

We generalize the analysis of Section III-B by notingthat |SL(s)| = 1 is possible only for Res ≤ 0 because|SL(s)| < 1 for all s in the RHP (this is a consequenceof the bounded Hurwitzian properties of these functions). Byapplying Rouche’s Theorem to each zL,i and Ωi, we conclude

5

t h at S L (s ) − S G (− s ) h as at l e ast L H P z er os, d e n ot e d b yz 1 , . . . , z , t h at s atisf y z i ∈ Ω i .

We c a n n o w r e pl a c e t h e t er m i = 1 g (z i ) i n ( 4) wit h ap ositi v e v al u e t h at is i n d e p e n d e nt of t h e m at c hi n g n et w or k.Si n c e z i ar e i n c o nj u g at e p airs a n d g (z i ) i n Ta bl e I s atis fi esg (z ∗

i ) = ( g (z i ))∗ , t h e n g (z i ) + g (z ∗

i ) = 2 R e (g (z i )) ≥mi n z ∈ Ω i 2 R e (g (z )) ≥ 0 . T his yi el ds ( 1 2) –( 1 4).

F. Ot h er B o d e- F a n o i n e q u aliti es

O ur b o u n d a n al ysis r e q uir es t h e ass u m pti o n ( 1 1). If t hisass u m pti o n is str e n gt h e n e d s u c h t h at 1 − S L (− s )S L (s ) h as az er o at s = s 0 of m ulti pli cit y m gr e at er t h a n o n e, t h e n [ 2]s h o ws t h at i n e q u aliti es ot h er t h a n ( 4) c a n als o b e d eri v e d.

F or e x a m pl e, if m ≥ 3 at s 0 = ∞ , t h e n t h e f oll o wi n gi n e q u alit y als o h ol ds

0

ω 2 l o g1

|Γ( j ω )|d ω ≤

π

6i

p 3L, i +

i

z 3L, i −

π

3i

z 3i ,

( 1 5)

w h er e z i , i = 1 , 2 , . . . ar e t h e L H P z er os of S L (s ) − S G (− s ).E q u alit y i n ( 1 5) h ol ds if a n d o nl y if S L (∞ )S G (∞ ) = 1 .Alt h o u g h R e z i < 0 , w e c a n n ot d et er mi n e t h e si g n ofR e z 3

i wit h o ut k n o wi n g t h e i m a gi n ar y c o m p o n e nts of z i .H e n c e, w e c a n n ot d eri v e a n u p p er b o u n d fr o m ( 1 5) t h at isi n d e p e n d e nt of t h e m at c hi n g n et w or k. We t h er ef or e d o n otp urs u e ( 1 5) a n y f urt h er.

I V. E X A M P L E A P P L I C A T I O N S

We ill ustr at e a p pli c ati o ns of t h e i m pr o v e d b o u n d usi n ga n al yti c al a n d n u m eri c al e x a m pl es.

A. A n al yti c al e x a m pl e

We bri e fl y r e visit t h e o n e-st a g e R C e x a m pl e i n Fi g ur e 2( a).St e ps 1 a n d 2 i n S e cti o n III- D h a v e alr e a d y b e e n d o n e usi n g( 7). T h e o nl y z er o is z L, 1 = 0 , s o it is n ot p ossi bl e f or z L, 1 t ob e c o nt ai n e d i nsi d e a n y ∂ Ω 1 t h at is i n t h e L H P. T h er ef or e, St e p3 yi el ds n o c o nt o urs a n d B 1 = B 1 . B ut w e alr e a d y k n o w t h eB o d e- F a n o b o u n d ( 8) is ti g ht i n t his e x a m pl e s o t his c o n cl usi o nis u ns ur prisi n g.

F or t h e t w o-st a g e R C e x a m pl e i n Fi g ur e 2( b), St e ps 1 a n d2 h a v e alr e a d y b e e n d o n e usi n g ( 9). F or St e p 3, Fi g ur e 3 pl otst h e |S L (s )| = 1 c ur v es a n d t h e z er os of S L (s ), w h er e S L (s )is gi v e n i n ( 9). Fr o m Fi g ur e 3, z L, 1 = − ( 1 +

√2) / (Z 0 C ) is i n

Ω 1 . B e c a us e s 0 = ∞ , Ta bl e I i n di c at es t h at g (z i ) = − π z i . T ofi n d z 1 i n St e p 4, g ( z 1 ) is mi ni mi z e d b y t h e cl os est p oi nt t o t h ei m a gi n ar y a xis i n Ω 1 . T his p oi nt is m ar k e d b y a p e nt a gr a mi n Fi g ur e 3, w hi c h is l o c at e d o n t h e r e al a xis a n d s atis fi esS L ( z 1 ) = − 1 . S ol vi n g t his gi v es z 1 = − 2 / (Z 0 C ). T h er ef or e,t h e i m pr o v e d b o u n d is o bt ai n e d b y s u btr a cti n g g ( z 1 ) fr o m ( 1 0)a n d g etti n g

B 2 =π

Z 0 C. ( 1 6)

w hi c h is o n e-t hir d of t h e B o d e- F a n o b o u n d i n ( 1 0), a n dc oi n ci d es wit h B 1 i n ( 8).

B o u n d ( 1 6) is ti g ht i n t h at it c a n b e a p pr o a c h e d b y c h o osi n ga m at c hi n g n et w or k s u c h t h at S G (s ) = − 1 + ε , w h er e ε >

( a)

( b)

L o a d1. 1 9: 1

0.30

nH

11.5

8 pF

0.13

nH

0.18

nH

27.7

2 pF

2 7. 9 5 n H

0. 1 3 p F

3 2. 5 9 n H

0. 1 1 p F

2 2. 5 3 3. 5

x 1 09

− 1 8

− 1 6

− 1 4

− 1 2

− 1 0

− 8

− 6

− 4

− 2

0

2

Fr e q u e n c y ( H z)

|Γ(ω

)| (d

B)

R C l o a d

T w o −st a g e R C l o a d

0

Fi g. 4. ( a) F or t h e R C l o a d i n Fi g ur e 2( a), w h er e Z 0 = 5 0 Ω a n d C = 2 0p F, a fift h- or d er C h e b ys h e v n et w or k t h at m at c h es t h e l o a d b et w e e n 2. 5 6 G H za n d 2. 8 3 G H z is s h o w n. ( b) W h e n t h e n et w or k i n ( a) is us e d t o m at c h b ot ht h e si n gl e-st a g e a n d t w o-st a g e R C l o a d i n Fi g ur e 2, t h e r es ulti n g |Γ ( j ω ) | ispl ott e d v ers us fr e q u e n c y.

is ar bitr aril y s m all. F or t his S G (s ), t h e L H P z er o of S L (s ) −

S G (− s ) is at z 1 = − 2 + (√

1 + ε 2 − 1 ) / εZ 0 C , a n d t h e a c hi e v e d i nt e gr al

i n ( 1 6) is π − π (√

1 + ε 2 − 1 ) / εZ 0 C ≈ π ( 1 − ε / 2 )

Z 0 C . Cl e arl y, t h e s m all er εis, t h e cl os er z 1 is t o z 1 = − 2 / (Z 0 C ), a n d t h e cl os er t h ea c hi e v e d i nt e gr al is t o b o u n d ( 1 6). H e n c e, C o n diti o n 2 c a nb e as y m pt oti c all y s atis fi e d as ε → 0 , a n d b o u n d ( 1 6) is ti g ht.H o w e v er, ε c a n n ot b e z er o b e c a us e C o n diti o n 1 is vi ol at e d b yS G (s ) = − 1 si n c e S L (s 0 )S G (s 0 ) = 1

F or e x a m pl e, if w e l et ε = 0 .0 1 , w e o bt ai n S G (s ) = − 0 .9 9a n d z 1 = − 2 .0 0 5 / (Z 0 C ). T h e a c hi e v e d i nt e gr al i n ( 1 6) ist h er ef or e 0 .9 9 5 π / (Z 0 C ). T his S G (s ) c a n b e r e ali z e d b y am at c hi n g n et w or k c o nsisti n g of a si n gl e i d e al tr a nsf or m erw h os e i n p ut t o o ut p ut t ur n r ati o is 1 4 .1 1 : 1 . T h e i m p e d a n c es e e n at t h e o ut p ut p ort of t his m at c hi n g n et w or k is a c o nst a ntr esist a n c e 0 .0 0 5 Z 0 .

Si n c e B 2 = B 1 , it is c o n c ei v a bl e t h at a si n gl e m at c hi n gcir c uit c a n b e us e d f or eit h er l o a d t o a c hi e v e c o m p ar a bl e b a n d-wi dt h. We ill ustr at e t h at t his is i n d e e d s o wit h t h e m at c hi n gn et w or k i n Fi g ur e 4( a), c h os e n f or Z 0 = 5 0 Ω a n d C = 2 0p F i n Fi g ur e 2. Fi g ur e 4( a) r e pr es e nts a fift h- or d er C h e b ys h e vm at c hi n g n et w or k d esi g n e d usi n g m et h o ds pr es e nt e d i n [ 2],[ 1 4].

W h e n a p pli e d t o t h e si n gl e-st a g e R C l o a d, t h e m at c hi n gn et w or k pr es e nts a n e q u al-ri p pl e |Γ( j ω )| fr e q u e n c y r es p o ns eb et w e e n 2. 5 6 G H z a n d 2. 8 3 G H z ( b a n d wi dt h of 2 6 6 M H z),w h er e |Γ( j ω )| f or t h e R C l o a d is s h o w n b y t h e bl u e d as h e dc ur v e i n Fi g ur e 4( b), a n d t h e m a xi m u m r et ur n l oss i n t h ep ass b a n d is - 1 4 d B. T h e C h e b ys h e v n et w or k a c hi e v es t h eb o u n d B 1 = π

Z 0 C = 3 .1 4 × 1 0 9 f or t h e R C l o a d.

F or t h e t w o-st a g e R C l o a d i n Fi g ur e 2( b), t h e m at c hi n gn et w or k pr es e nts a |Γ( j ω )| s h o w n b y t h e r e d s oli d c ur v e

6

1 2 3 4 5x 109

−100

−80

−60

−40

−20

0

Frequency (Hz)

Mag

nitu

de (d

B)

−80

−60

−40

−20

0

20

Phas

e (d

egre

e)

62.5 mm

2.5 mm

MagnitudePhaseModel error

(a) (b)

Fig. 5. (a) A dipole that is half-wavelength at 2.4 GHz. (b) For the dipolein (a), the magnitude and phase of the reflection coefficient are plotted in1–5 GHz. Also shown are the error magnitude of the rational model. Themagnitudes refer to the left y-axis and the phase refers to the right.

TABLE IIVALUES OF pL,i AND zL,i FOR THE TWO SL(s) MODELS IN (17).

i pL,i zL,i

1, 2 (−3.01± 9.36j)× 109 (−3.01± 9.42j)× 109

3, 4 (−0.26± 1.25j)× 1010 (−0.05± 1.34j)× 1010

5, 6 (−0.34± 2.57j)× 1010 (−0.35± 2.59j)× 1010

7, 8 (−0.45± 3.30j)× 1010 (−0.54± 3.38j)× 1010

9 −4.91× 1010 2.14× 1011

in Figure 4(b). The passband for the two-stage RC load isapproximately the same as that for the single-stage RC load.

It is perhaps surprising that B′2 = B1, but an intuitiveexplanation proceeds as follows. We know that (8) is tight andcan be achieved by connecting the source directly to the load.Clearly, at high frequencies, the capacitor in Figure 2(a) makesthe impedance of the parallel circuit small and reactive. Thesame is true of the circuit in Figure 2(b). For high frequencies,SL(s) in (7) approximately equals SL(s− 2

Z0C) in (9). Hence,

if the frequency range [ω1, ω2] is supported by the circuitFigure 2(a), then the same range can be achieved in Figure2(b), but offset by 2/(Z0C). A transformer is used in thematching circuit for Figure 2(b) to lower the impedance of thesource and, hence, shift the match towards high frequencies. Itfollows that the transformer used to achieve B′2 also achievesB1.

We next present a numerical example of the improvedbound.

B. Numerical example using realistic load

A dipole antenna is shown in Figure 5(a), which is half-wavelength at 2.4 GHz. To apply the bound, we first simulatethe frequency response of the dipole in 1–5 GHz using AnsysHFSS, and then model the reflection coefficient as a rationalfunction. During the modeling process, we can specify thedegree of the rational function. Typically, the higher degree weuse, the better precision we get from the model. However, thereis the risk of “over-fitting”, and some guidelines for choosingthe degree are found in [9].

We model the reflection coefficient of the dipole using arational function with degree nine, which has the following

Res

Ims

−7 −6 −5 −4 −3 −2 −1 0

x 109

−3

−2

−1

0

1

2

3

x 1010

PolesZeros

Res

Ims

−3.1 −3 −2.9

x 109

9.3

9.4

9.5

x 109

Fig. 6. For the dipole in Figure 5(a) described by (17), |SL(s)| = 1 curvesare drawn over the s-plane, and |SL(s)| < 1 regions are filled with green.The zoomed-in plot shows Ω1, zL,1 and z1; Ω2, zL,2 and z2 are at thecomplex conjugate locations (not shown).

form:

SL(s) = k ·∏9i=1(s− pL,i)∏9i=1(s− zL,i)

, (17)

where k = −0.19, and pL,i, zL,i are listed in Table II. Thesimulated reflection coefficient of the dipole is shown in Figure5(b), where the solid and dashed lines represent the magnitudeand phase, respectively. The magnitude of the error betweenthe model and the simulation is also plotted in Figure 5(b). Themaximum error is −59.4 dB and the average error is −68.8dB.

The model in (17) satisfies (2) at s0 = 0. We apply theBode-Fano bound to the model to obtain:∫ ω2

ω1

ω−2 log1

|Γ(jω)|dω ≤ 3.37× 10−10, (18)

where ω1 = 2π × 109 rad/s and ω2 = π × 1010 rad/s.We then follow the steps to compute the improved bound

(18). The curves of |SL(s)| = 1 are plotted in Figure 6,together with the poles and zeros of SL(s). Observing Figure6, we find zL,1, zL,2 = (−3.01 ± 9.36j) × 109 are insidesimple closed contours of |SL(s)| = 1 in the LHP. Forexample, the zoomed-in plot in Figure 6 shows the location ofzL,1; Ω1 is defined as the green region containing zL,1. NotezL,2 and Ω2 are the complex conjugate of zL,1 and Ω1, andare not shown. Then z1,2 can be found by optimizing (14)numerically, where g(zi) = −π/zi (see Table I). The result isz1,2 = (−2.95± 9.50j)× 109. Finally, the improved bound isobtained as∫ ∞

0

ω−2 log1

|Γ(jω)|dω ≤ 1.50× 10−10. (19)

Clearly (19) is more than 50% tighter than (18).Generally, the amount of improvement in the bound depends

on the degree of the rational function approximation—higherdegrees tend to allow more improvement.

7

V. CONCLUSIONS

We have presented a method to identify when the Bode-Fano bound cannot be achieved, and presented a techniquefor tightening the bound. The improved bound can be appliedin all cases where the original bound applies, and requires noadditional assumptions on the load structure or behavior. Onlya few additional mathematical steps are needed. We presentedanalytical and numerical examples to illustrate its application,and showed that the improvement can be dramatic.

The Bode-Fano bound is applied in practical matchingproblems in many ways: to guide the design of broadbandantennas; to judge whether a prescribed matching bandwidth isrealizable; to determine if a matching network is near-optimal.Since our method tightens the bound without imposing anyadditional conditions or assumptions, it applies just as readilyto these same problems.

Whether the improved bound is tight depends on thecharacteristics of the load and the degree of its rationalapproximation. We do not know a systematic way to tell thisin all cases, and we think this would be an interesting researchproblem to examine. We also believe a multiport version ofthis improved bound would be of great interest. Recent resultsin multiport bounds [8], [9] might be amenable to the analysispresented herein.

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[4] D. C. Youla, “A new theory of broad-band matching,” IEEE Trans. Circ.Thy., vol. CT-11, no. 1, pp. 30–50, Mar. 1964.

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[6] Z.-M. Wang and W.-K. Chen, “Broad-band matching of multiportnetworks,” IEEE Trans. Circ. Syst., vol. CAS–31, no. 9, pp. 788–796,Sep. 1984.

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Ding Nie Ding Nie (M’16-) was born in Nanchang,Jiangxi, Peoples Republic of China. He received theB.S. degree in electronic engineering from ShanghaiJiao Tong University, Shanghai, in 2010. He receivedthe M.S. degree and the Ph.D. degree in electricalengineering from the University of Notre Dame,Notre Dame, IN, USA, in 2016. He then joinedApple Inc., Cupertino, CA, USA, in 2016. He wonthe 2016 Outstanding Young Author Award for thepaper he co-authored in the IEEE Transactions onCircuits and Systems. His research interests include

communications, radio-frequency circuits and antennas.

8

Bertrand M. Hochwald Bertrand M. Hochwald(F’08-) was born in New York, NY. He receivedhis undergraduate education from Swarthmore Col-lege, Swarthmore, PA. He received the M.S. de-gree in electrical engineering from Duke University,Durham, NC, and the M.A. degree in statistics andthe Ph.D. degree in electrical engineering from YaleUniversity, New Haven, CT.

From 1986 to 1989, he worked for the Departmentof Defense, Fort Meade, MD. After completinggraduate school he was a Research Associate and

Visiting Assistant Professor at the Coordinated Science Laboratory, Universityof Illinois, Urbana-Champaign. In September 1996, he joined the Mathemat-ics of Communications Research Department at Bell Laboratories, LucentTechnologies, Murray Hill, NJ where he was a Distinguished Member of theTechnical Staff.

In 2005 he joined Beceem Communications, Santa Clara, CA, as their ChiefScientist, and in 2009 as Vice-President of Systems Engineering. He servedconcurrently as a Consulting Professor in Electrical Engineering at StanfordUniversity, Palo Alto, CA. In 2011, he joined the faculty at the University ofNotre Dame as Freimann Professor of Electrical Engineering.

He received several achievement awards while employed at the Departmentof Defense and the Prize Teaching Fellowship at Yale University. He hasserved as an Editor for several IEEE journals and given plenary and invitedtalks on various aspects of signal processing, communications, and radio-frequency systems. He has co-invented several well-known multiple-antennatechniques, including differential methods, linear dispersion codes, and multi-user vector perturbation methods. He has forty-seven patents.

He received the 2006 Stephen O. Rice Prize for the best paper publishedin the IEEE Transactions on Communications. He co-authored a paper thatwon the 2016 Best Paper Award by a young author in the IEEE Transactionson Circuits and Systems. He is listed as a Thomson Reuters Most InfluentialScientific Mind in 2014 and 2015. He is a Fellow of the IEEE.