ims2015_delfmems - final
TRANSCRIPT
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RFIC
2015
1
DelfMEMS
Next Generation RF Switching Solution for 4G/5G
Enabling High Speed Information -
to anyone, anywhere, anyhow, anytime
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RFIC
2015
2
Power Loss in 4G Handsets
Focus of this presentation is on handset power loss experienced with LTE wireless technology
Power loss is observed through different aspects of mobile phone performance degradation and from the reduction of mobile battery life point
of view
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RFIC
2015
3
Cellular Standards Evolution
MarketingEvolution
4G
3.9G
3.5G
3G
2.5G
2G
Channel Bandwidth
PDC (Japan) GSM (Europe) IS-136/AMPS (US TDMA) IS-95A (US CDMA)
iMODE HSCSD GPRS IS-95B (US CDMA)
WCDMA (FDD & TDD) TD-SCDMA (China) E-GPRS (EDGE) cdma2000 (1xRTT)
HSDPA HSUPA UMTS-TDD 1x EV-DO (1xRTT)
HSPA+, E-HSPA LTE (R8,9, FDD & TDD) 802.16e (Mobile WiMAX)
LTE-Advanced(R10,11,12+, FDD & TDD)
802.16m / WiMAX2(WirelessMAN-Advanced)
EDGE EvolutionWiBRO(Korea)
MarketingEvolution
1.2288 MHz
200 KHz
5 MHz
1.4, 3, 5, 10, 20 MHz
5 MHz
up to 100 MHz
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RFIC
2015
4
LTE Categories
* 2x2 DL (Rx) MIMO assumed for all LTE categories, except for Cat5
** LTE Cat5 not implemented due to the MIMO 4x2 requirement
Categories LTE Cat1 LTE Cat2 LTE Cat3 LTE Cat4 LTE Cat5 LTE Cat6 LTE Cat9
Data RatesDL 10 Mbps 50 Mbps 100 Mbps 150 Mbps 300 Mbps 300 Mbps 450 Mbps
UL 5 Mbps 25 Mbps 50 Mbps 50 Mbps 75 Mbps 50 Mbps 50 Mbps
Channel Bandwidth
DL 20 MHz 20 MHz 20 MHz 20 MHz (CA) 20 MHz 40 MHz (CA) 60 MHz (CA)
UL 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz
DL MIMO Configuration *
Not sup. 2x2 2x2 2x2 4x2 ** 2x2 2x2
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RFIC
2015
5
LTE Evolution
• LTE Cat6 300Mbps/50Mbps not even close to customer needs and market requirements
• Peak data rate target for the most recent LTE-Advanced technology starts at 1Gbps for down link connections
• Even this is just a first step and target that will have to be improved rapidly and constantly
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RFIC
2015
6
Data Rate Speed (R)Evolution
Today FUTURE
(LTE Cat9)
450 Mbps RX peak data rates with LTE 3x20MHz CA deployments
50 Mbps TX peak data rates
Enabling the 1000x mobile
data challenge
(source: Qualcomm)
• More spectrum
• 3.5GHz Bands introduction
• 5GHz Bands introduction
• 100 MHz RX carrier aggregation
• TDD + FDD aggregation
• TX Diversity Path introduction
• TX Carrier Aggregation
MEMS advantage
MEMS advantage
MEMS advantage
MEMS advantage
MEMS advantage
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RFIC
2015
7
RF Front End (RF FE)
• Explosion of LTE band numbers– Increased complexity
– Mobile handset market price erosion pressure
• RF FE architecture design for smartphones becomes exceptionally challenging
MIPI RFFE
Serial Control
Master
Diversity
Antenna Port
Diversity
RX LNAs
RFIC
Main
RX LNAs
RFIC
TX FE
RFFE
Control
Interface
Diversity
FEM
SPnT
SPnT
mipi RFFE
mipi RFFE
High
Bands
FEMid
mipi RFFE
mipi RFFE
Envelope TrackingModulator
VPA
...mipi RFFE
mipi RFFE
PA
mipi RFFE
VHF 4G PAM
SPnT
mipi RFFE
mipi RFFE
SPnT
mipi RFFE
Main
Antenna Port
PA
3G/4G
HB
mipi RFFE
SPnT
PA
3G/4G
LB
GSMPA
PA
MMMB
PAM
SPnT
mipi RFFE
mipi RFFE
Antenna
Tuner
MIPI RFFE
SPnT
SPnT
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RFIC
2015
8
RF Components Challenges
• Power loss (insertion loss)
• Isolation
• Linearity intermodulation and cross modulation
• Components frequency response
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RFIC
2015
9
RF FE and Battery Life
• Battery life is the most important consideration for over 70% of users
(IWPC conference year 2014)
IDC consumer space 360 (May 2014 survey)
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RFIC
2015
10
PA’s Dominate Battery Drain
• LTE is not good for your battery….
– LTE network typically require short bursts of high RF Power for data transmission 0
50
100
150
200
250
300
350
0
2
4
6
8
10
12
14
-50 -40 -30 -20 -10 0 10 20
Probability[%]
Transmit Power Level [dBm]
WCDMA Handset Transmit Power Distribution
Current Drain
[mA]
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RFIC
2015
11
RF Switch as a Solution
• Industry standard assessment of RF switches:
Figure of Merit
(Ron * Coff )
264
448
485
250270
224207
160
113
8
192
0
100
200
300
400
500
600
0.6 0.8 1 1.2 1.4 1.6 1.8 2
DelfMEMS
Single Gate
Triple Gate
STM
Next Gen STM
0.18um Thin-film
0.18um Thick-film
0.35um
0.25um
FoM
Ron
Peregrine UltraCMOS
Infineon CMOS
pHEMT GaAs technology
SOS technology
SOI technology
CMOS technology
RF MEMS technology
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RFIC
2015
12
RF MEMS Switch Benefit
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
Inse
rtio
n L
oss
[d
B]
Frequency [MHz]
SP12T Switch Insertion Loss
DelfMEMS
Solid State
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RFIC
2015
13
Talk Time
• DelfMEMS RF MEMS switch compared to existing SOI antenna switch
• Current savings across bands equivalent to percentages of longer talk time
RF MEMS Antenna Switch gives up to 17% increased battery life
= Longer Talk TimeMIPI RFFE
Serial Control
Master
Diversity
Antenna Port
Diversity
RX LNAs
RFIC
Main
RX LNAs
RFIC
TX FE
RFFE
Control
Interface
Diversity
FEM
SPnT
SPnT
mipi RFFE
mipi RFFE
High
Bands
FEMid
mipi RFFE
mipi RFFE
Envelope TrackingModulator
VPA
...mipi RFFE
mipi RFFE
PA
mipi RFFE
VHF 4G PAM
SPnT
mipi RFFE
mipi RFFE
SPnT
mipi RFFE
Main
Antenna Port
PA
3G/4G
HB
mipi RFFE
SPnT
PA
3G/4G
LB
GSM
PA
PA
MMMB
PAM
SPnT
mipi RFFE
mipi RFFE
Antenna
Tuner
MIPI RFFE
SPnT
SPnT
B 7,40,41… SOI RF MEMS Current IL [dB] -1 -0.35 Savings
CDL 21% 8% 13%
B 1,2,3,4… SOI RF MEMS Current IL [dB] -1.2 -0.3 Savings
CDL 24% 7% 17%
B 5,8… SOI RF MEMS Current IL [dB] -0.9 -0.25 Savings
CDL 19% 6% 13%
B 13,17… SOI RF MEMS Current IL [dB] -0.85 -0.25 Savings
CDL 18% 6% 12%
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RFIC
2015
14
Data Throughput
• Decreased RF FE Insertion Loss will improve Rx Sensitivity by the same amount
• Both Main and Diversity Antenna Switch IL are compared between SOI and RF MEMS Switch
RF MEMS Antenna Switch gives nearly 30% Rx sensitivity
improvement = Better Call Quality
MIPI RFFE
Serial Control
Master
Diversity
Antenna Port
Diversity
RX LNAs
RFIC
Main
RX LNAs
RFIC
TX FE
RFFE
Control
Interface
Diversity
FEM
SPnT
SPnT
mipi RFFE
mipi RFFE
High
Bands
FEMid
mipi RFFE
mipi RFFE
Envelope TrackingModulator
VPA
...mipi RFFE
mipi RFFE
PA
mipi RFFE
VHF 4G PAM
SPnT
mipi RFFE
mipi RFFE
SPnT
mipi RFFE
Main
Antenna Port
PA
3G/4G
HB
mipi RFFE
SPnT
PA
3G/4G
LB
GSM
PA
PA
MMMB
PAM
SPnT
mipi RFFE
mipi RFFE
Antenna
Tuner
MIPI RFFE
SPnT
SPnT
B 7,40,41… SOI RF MEMS RxSI
IL [dB] -1 -0.35 16%
B 13,17… SOI RF MEMS RxSI
IL [dB] -0.85 -0.25 15%
B 5,8… SOI RF MEMS RxSI
IL [dB] -0.9 -0.25 16%
B 2,3… SOI RF MEMS RxSI
IL [dB] -1.2 -0.3 23%
B 1,4… SOI RF MEMS RxSI
IL [dB] -1.4 -0.3 29%
B 1,2,3, 4… SOI RF MEMS RxSI
IL [dB] -1.4 -0.3 29%
B 5,8… SOI RF MEMS RxSI
IL [dB] -0.9 -0.25 16%
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RFIC
2015
15
Conclusion
• LTE-A main market driver
– Higher Down-Link & Up-Link Data Speed … • Comes with a cost …
Shorter battery life and degraded signal reception quality
• RF MEMS switches offer the best solution
– Reduction of RF FE losses
– Broadband design for high frequency bands
– High linearity design for UL CA
– Exceptional band-to-band and TX /RX Isolation