1. Types of DAF

2. LGC DAF Line-up

3. Characteristics of DAF

3-1. Normal DAF (LD-A series)

3-2. Normal DAF (LDA-5A series)

3-3. FOW (LD-R series)

4. R&D Road Map

INDEX

1) FOW : Film over Wire , 2) FOD : Film over Die

DAF (Die Attach Film) is adhesion film for semiconductor and is divided by PKG structures.

DAF types DAF Structure

Type PKG structure DAF structure Role / Key properties

Normal

Adhesion (Chip to chip / Chip to sub)

Mold void free

High adhesion

Thermal reliability

Low void at die attach

FOW 1)

Adhesion (Chip to chip)

Good wire molding

No void around the wires and chip

Thermal reliability

Viscosity control

FOD 2)

Adhesion and Chip embedded

Good chip and wire molding

Less substrate warpage

Surface flatness for upper chip

No void around the wires and chip

Less fillet around the chip

Viscosity & Cure control

N-DAF

N-DAF Chip

Chip

N-DAF

FOW Chip

Chip

Chip

N-DAF Chip FOD

N-DAF (5~40)

PSA (10)

Base film (100)

PET (38)

FOW (50~60)

PSA (10)

Base film (100)

PET (38)

FOD (90~120)

PSA (10)

Base film (100)

PET (38)

Base Film

UV curable PSA

Adhesive

Release PET

1. DAF Structure & application

Normal Type

3 Normal DAFs (LD-A, LDA-5A, LDA-200) are manufactured in mass production

Normal DAF

Grade LD-A LDA-5A LDA-200

Dicing tape

PO/PSA () UV type 100 / 10 or 90 / 10 100 / 10 100 / 10

Adhesive

thickness () 10, 20 10, 20, 40 5, 10

Die Stack

(thermal budget) > 8 > 4 > 4

Application Die to die or

die to Sub. (PCB or L/F)

Die to die or

die to Sub. (PCB or L/F)

Die to die (5/10/20) or

Die to Sub. (10/20)

Features & Status

High reliability

High thermal budget for high stack

Low water absorption

Mold void Free

Blade, SDBG

Good processability

Enhanced HAST property

Applicable to shorten cure time

High adhesion

Mold void Free

Blade, SDBG

Non filler & High modulus for ultra

thin die (≤25um)

Good wetting for die warpage

Die attach cure void Free

SDBG

1) GAL(Grinding After Laser)

2-1. LGC DAF Line-up

3 penetration DAFs (LDA-7A, LDA-7B, and LD-R) are manufactured in mass production

Penetration DAF

Content Wire penetration (FOW) Chip / Wire penetration (FOD)

Grade LDA-7A series LD-R series LDA-7B series LD-R series

Dicing tape

(UV type) PO/PSA () : 100 / 10

Adhesive

thickness () 50, 60 50 115 110

Application FOW (Film over wire)

die to die(on PCB)

FOD (Film over die)

die to die(on PCB)

Features

& Status

Good gap filling

No wire damage &

deformation

Enhanced HAST

property

Excellent reliability

Blade, SDBG

High reliability

enhanced HAST property

Low moisture absorption &

Lower Total Cl contents

Good wire molding

Blade, SDBG

Good embedding performance

to wire & controller chip

No void around wires and chip

Controlled fillet

Good flatness for additional upper

chip stack

Low moisture absorption

BCE 1)

High reliability

enhanced HAST property

Low moisture absorption &

Lower Total Cl contents

Minimized bleed out

SDBG

1) BCE : Blade Chill Expanding

Penetration Type 2-2. LGC DAF Line-up

High Reliability

High Thermal Budget for High Stack

Blade / SDBG(GAL) Process Compatibility

Good Processibility

3-1. Characteristics of Normal DAF (LD-A series)

High adhesion

Low Moisture absorption

Low out-gassing & cure stress during PKG Process

-. No adhesive delamination

-. No adhesive pop-corn

" LD-A has High PKG Reliability : High adhesion reduced crack & delamination "

LD-A series Reliability Property

-. Die Size : Top die size 5 × 5mm (Adhesion area)

Bottom die size 10 × 10mm

-. Die thickness : Mirror Die 500

-. Die attach condition : 130, 2kgf, 2sec

-. Test speed : 50µm/sec, Shear height : 250

Stage Test @ 175 Test @ 250

Cure condition 0.5hr / 150 1hr / 150 1.5hr / 150 2hr / 150 2hr / 175

LD-A (20) 1.9 3.6 4.1 4.9 5.2

H-com (20) 0.7 1.1 2.3 2.9 3.4

Hot die shear strength

LD-A series Reliability Property

" LD-A has high thermal budget properties for Pre-conditioning Test "

Void control is very important in PKG Process

Void caused reliability issue.

→ Moisture absorption in void area

→ Delamination, crack(chip, wire, PKG) @ Reflow

& acceleration of ion migration

Thermal Budget Test

LD-A has been designed to maintain low viscosity & slow cure rate in the pre-cure

process window. ⇒ High thermal budget & good void margin

Void

Ion migration

Electrode Cu ion migration

Anode (+) Cu Cu2++ 2e-

H2O H+ + OH-

Between (+)/(-)

Cu2++ 2OH- Cu(OH)2

Cu(OH)2 CuO + H2O

Cu(OH)2 Cu2+ + 2OH-

Cathode(-) Cu2++ 2e- Cu↓

2H+ + 2e- H2↑

Acceleration Cu2+ + 2Cl- CuCl2

CuCl2 Cu2+ + 2Cl-

Cu fuse corrosion

Factors Acceleration condition

Materials (fast) Ag > Cu > Pb >

Sn-Pb Solder > Sn > Au (slow)

Temperature High temperature

Humidity High humidity

Voltage High voltage

pH Acidity

Ion impurity Halogen materials

0.8

1.0

1.2

1.4

LD-A2 R-7

LD-A shows lower moisture absorption than H-com

LD-A has good HAST Property

H-com LD-A

-. HAST Coupon

: Comb type pattern

-. L/S = 75 um / 75 um

-. 5.5V (130/85%RH)

Test condition

- size : 50 x 50mm x 2.0 g

- 24h @ 85 / 85%(H)

Moisture Absorption

HAST Property

" LD-A has excellent HAST property "

LD-A series Reliability Property

LD-A has low diffusion speed of Cu ion → Charge loss issue ↓ → Good Reliability

Cu Ion Permeation

Content H-com LD-A

arrival time

Min.@10uA 211 221 214 231

" LD-A has High PKG Reliability : Cu-ion diffusion speed is slow"

LD-A series Reliability Property

Initial State Diffusion State

Permeation State

Beginning of permeation

H com-1 H com-2 LGC-1 LGC-2

Measurement of Cu-ion diffusion speed

Cu-ion charge → Ion Migration → Short → PKG yield drop

Pick up Machine : SHINKAWA SPA-400

Mirror Wafer Thick. () : 60

Chip Size (mm) : 13.3×9.1

Collet Size (mm) : 12.65 × 8.95

UV Intensity : 70mW/

UV Dose : 100mJ/

Expanding Height : 3.5mm

Pick up time: 50ms

Pin type : Φ0.5×All flat×12L, 20ea

Sawing Machine: DFD-6361(DISCO)

Mirror Wafer Thickness(): 60

Dicing Method: Step cut

Blade type: (Z1/Z2 : ZH05-SD3500-N1-50-CC02 / BB01)

Cut Depth(): (Z1-160, Z2-93 or 83)

Dicing Speed(/sec): 30

Spindle Speed(rpm): Z1-50k, Z2-45k

Test Result

Pick-up Performance(%)

Sample Name LD-A246ST LD-A268ST R-7 (H-Com)

Pin height

(mm)

0.17 0 37 40

0.18 24 94 96

0.20 98 100 100

Processibility_Blade Sawing ① Pick-up Test

Test Condition

② Die separation test

Test Condition

1) DAF Tape mounting → 2) Blade sawing → 3) UV Exposure → 7) Expanding Tool setting → 8) Test Start

Equipment : Texture analyzer

Chip Size / Thickness : 10 × 10 mm / 35

UV Intensity / Dose : 70mW/ / 100mJ/

Expanding Height : 3.5mm

Test speed : 5mm/sec

Pin type : Φ1mm , Plat

Blade

sawing

Sawing Machine: DFD-6361(DISCO)

Mirror Wafer Thickness(): 60

Dicing Method: Step cut

Blade type: (Z1/Z2 : ZH05-SD3500-N1-50-CC02 / BB01)

Cut Depth(): (Z1-160, Z2-93 or 83)

Dicing Speed(/sec): 30

Spindle Speed(rpm): Z1-50k, Z2-45k

R-7A268STA246ST

450

400

350

300

250

200

Separa

tion f

orc

e (

gf)

334.402

236.156 238.869

Die separation test (Blade sawing)Die separation Force ( Blade sawing)

R-7A268STA246ST

0.18

0.17

0.16

0.15

0.14

0.13

Separa

tion t

ime (

sec)

0.157381

0.1373810.139474

Die separation test (Blade sawing)Die separation Time ( Blade sawing)

Test Condition

Test Result

Cold Expanding

condition

Expanding Height : 11 mm

Expanding Speed : 200 mm/s

Chamber Temp. : - 15

Soak time : 70sec

Heat shrinkage

condition

Expanding Height : 9 mm

Expanding Speed : 1 mm/s

Heater temp : 150

Heater rotation speed: 6 degree/s

Pick-up Performance(%)

Sample Name LD-A246ST LD-A268ST R-7(H-com)

Pin

height (mm)

0.18 0 33 39

0.20 32 90 90

0.30 60 96 98

0.40 85 100 100

Pick up Machine : SHINKAWA SPA-400

Mirror Wafer Thick. () : 35

Chip Size (mm) : 13.3 × 9.1

Collet Size (mm) : 12.65 × 8.95

UV Intensity : 70mW/

UV Dose : 100mJ/

Expanding Height : 3.5mm

Pick up time : 50ms

Pin type : Φ0.5×All flat×12L, 20ea

Processibility_SDBG simulation Test ① Pick-up Test

Test Condition

Equipment : Texture analyzer

Chip Size / Thickness : 10 × 10 mm / 35

UV Intensity / Dose : 70mW/ / 100mJ/

Expanding Height : 3.5mm

Test speed : 5mm/sec

Pin type : Φ1mm , Plat

Cold Expanding

condition

Expanding Height : 11 mm

Expanding Speed : 200 mm/s

Chamber Temp. : - 15

Soak time : 70sec

Heat shrinkage

condition

Expanding Height : 9 mm

Expanding Speed : 1 mm/s

Heater temp : 150

Heater rotation speed: 6 degree/s

R-7A268STA246ST

0.26

0.25

0.24

0.23

0.22

0.21

0.20

0.19

0.18

0.17

Separa

tion t

ime (

sec)

0.215

0.1905 0.1895

Die separation test (GAL Process)

R-7A268STA246ST

400

350

300

250

200

Separa

tion f

orc

e (

gf)

348.576

260.803

250.172

Die separation test (GAL Process)Die separation Force (SDBG Process) Die separation Time (SDBG Process)

② Die separation test

1) DAF Tape mounting → 2) Lase Dicing → 3) Cold & Heat expansion → 4) UV Exposure → 5) Expanding Tool setting → 6) Test

Die lift (Wafer thickness 35)

LD-A246ST LD-A268ST R-7(H-com)

③ Die lift

Die lift

Area

0

30

60

90

120

150

180

LD-A246ST LD-A268ST R-7

141.8

155.1

106.2

60.6 72.9 71.4

Ker

f w

idth

(

)

MD

TD

④ Kerf width

Kerf width

Expanding height (mm)

Cold Heat

11 9

High reliability : good adhesion and cohesion

Enhanced HAST property for good reliability

Good adhesive separation after expansion process

3-2. Concept of Normal DAF (LDA-5A)

" LDA-5A can improve the precon. Margin by High adhesion and cohesion "

Reliability LDA-5A series

Improved reliability of LDA-5A compared to R-9

Glass Die PKG Pre-conditioning Test

Hot die shear Test

LDA- 5A has a decided advantage for delamination after Precon.

* Precon: 85/85%

" LDA-5A enhanced HAST property"

Reliability LDA-5A series

Ion migration

Electrode Cu ion migration

Anode (+) Cu Cu2++ 2e-

H2O H+ + OH-

Between (+)/(-)

Cu2++ 2OH- Cu(OH)2

Cu(OH)2 CuO + H2O

Cu(OH)2 Cu2+ + 2OH-

Cathode(-) Cu2++ 2e- Cu↓

2H+ + 2e- H2↑

Acceleration Cu2+ + 2Cl- CuCl2

CuCl2 Cu2+ + 2Cl-

Cu fuse corrosion

Factors Acceleration condition

Materials (fast) Ag > Cu > Pb >

Sn-Pb Solder > Sn > Au (slow)

Temperature High temperature

Humidity High humidity

Voltage High voltage

pH Acidity

Ion impurity Halogen materials

Sample LDA-5A R-9

HAST result

(10V) 132h 86h

Optical images

after HAST

LDA-5A has better HAST reliability than R-9.

Pick-up Performance (success)

Sample LDA-5A23T-40

Pin Height

(mm)

0.17 100%

0.20 100%

0.25 100%

Test Result

Pick up Machine : SHINKAWA SPA-400

Chip Size (mm) : 8.5 × 8.5

UV Intensity : 70mW/

UV Dose : 400mJ/

Expanding Height : 3.5mm

Pick up time : 100ms

Pin type : Φ0.5×150×12L(Flat), 20ea

Test Condition

Sawing Machine: DFD-6361(DISCO)

Mirror Wafer Thickness(): 80

Dicing Method: Step cut

Cut Depth(): (Z1-150, Z2-80)

Dicing Speed(/sec): 30

Spindle Speed(rpm); Z1-50k, Z2-45k

Pick-up Test Processibility_Blade Sawing

Pick up Machine : SHINKAWA SPA-400

Chip Size (mm) : 8.5 × 8.5

UV Intensity : 70mW/

UV Dose : 400mJ/

Expanding Height : 3.5mm

Pick up time : 100ms

Pin type : Φ0.5×150×12L(Flat), 20ea

Test Condition

Wafer sawing condition Mirror Wafer() : 50

Chip size (mm) : 8.5 x 8.5

Cold Expansion

Expanding Height : 11

Expanding Speed : 200 mm/s

Chamber Temp. : - 15

Soak time : 70sec

Heat shrinkage

Expanding Height : 11 mm

Expanding Speed : 1 mm/s

Heater temp : 220

Heater rotation speed: 6 degree/s

Pick-up Performance (success)

Sample LDA-5A23T-40

Pin Height

(mm)

0.17 80%

0.20 100%

0.25 100%

Test Result

Processibility_SDBG Simulation Test

3-3. Characteristics of FOW/FOD (LD-R series)

High Reliability : Enhanced HAST property

Good wire embedding performance(FOW)

Good controller chip embedding performance(FOD)

Blade Dicing and SDBG process compatible

High reliability and high processibility FOW has been developed based on LGC’s FOD technology

♦ High Reliability (Enhanced HAST Property)

(+) (-) Adhesive

Ion Migration Test , Cu comb Pattern

Line / Space = 75 / 75, Voltage 50V

LD-R series

Electrical failure occurs due to corrosion of metal

components or ion migration under HAST condition

M+ M+ M+

Electrode Cu ion migration

Anode (+) Cu Cu2++ 2e-

H2O H+ + OH-

Between (+)/(-)

Cu2++ 2OH- Cu(OH)2

Cu(OH)2 CuO + H2O

Cu(OH)2 Cu2+ + 2OH-

Cathode(-) Cu2++ 2e- Cu↓

2H+ + 2e- H2↑

Acceleration Cu2+ + 2Cl- CuCl2

CuCl2 Cu2+ + 2Cl-

Properties Condition Unit LD-R A-com

B-stage

Viscosity

(Rheometer)

110 5/min

1Hz Pa.s

2508 2151

120 1815 1727

130 1296 1486

TMA CTE (1/2) 10/min ppm/ 130 / 210 157 / 210

Tg (TMA) 10/min 143 130

Cure Rate 30min @140

10/min % 80 79

60min @140 98 98

Total Cl Content Adhesive ppm 60 180

v

355nm Nd.YAG pulsed laser

60 um

45~50 u

m m

irro

r w

afer

adhesive

Laser Dicing Cold Expansion Heat Shrinkage

After Heat Shrinking

v v v

- Method: Wafer ablation

- Laser Power: 3.5 W

-Wafer Thickness: 60 um - Chip Size: 4.9 × 8.8 mm

- Chamber Set Temp.: -15 °C

- Soak Time: 120 sec

- Expanding Speed: 200 mm/s

- Expanding Height: 7, 9 mm

- Expanding Time: 30 sec

- Mode: Cover Mode

- Expanding Speed: 7 or 1 mm/s

- Expanding Height: 8 mm - Heater Set Temp: 220 °C

- Heater Speed: 6°/s

Processibility_SDBG simulation Test ① Test condition

② Separation

#

Test Condition Separation Ratio (%)

Chip Cold expansion Heat shrinkage

FOD(110) LD-RC56ST

FOW(50) LD-R556ST Thickness

()

Size

(mm)

Temp.

()

Speed

(mm/s)

Height

(mm)

Temp.

()

Speed

(mm/s)

Height

(mm)

Leg 1 60 4.9 x 8.8 -15 200 9 220 7 8 100% 100%

Leg 2 60 4.9 x 8.8 -15 200 9 220 1 8 100% 100%

Leg 3 60 4.9 x 8.8 -15 200 7 220 7 8 86% 100%

Adhesive thickness ↓ → Separation performance ↑

Test Condition

Test Result

Cold Expanding

condition

Expanding Height : 9 mm

Expanding Speed : 200 mm/s

Chamber Temp. : - 15

Soak time : 120sec

Heat shrinkage

condition

Expanding Height : 8 mm

Expanding Speed : 1 mm/s

Heater temp : 220

Heater rotation speed: 6 degree/s

Pick-up Performance(%)

Sample Name FOD (110) LD-RC56ST

FOW (50) LD-R556ST

Pin

height (mm)

0.15 96 94

0.17 100 100

0.20 100 100

Pick up Machine : SHINKAWA SPA-400

Mirror Wafer Thick. () : 60

Chip Size (mm) : 4.9 × 8.8

UV Intensity : 70mW/

UV Dose : 300mJ/

Expanding Height : 3.5mm

Pick up time : 100ms

Pin type : Φ0.5×All flat×12L, 16ea

③ Pick-up

Structure / die attach condition

♦ Test condition

♦ Void Check

Sample preparation

- Controller attach → pre-cure → Chip 1 attach → SAT(T-scan)

→ Pre-cure → SAT(T-scan)

Chip and DAF spec. Test Condition

Controller

Chip Spec. 5.4mm x 3.1mm x 35(T)

DAF thickness 10

Chip 1 Chip Spec. 12.7mm x 9mm x 60(T)

FOW thickness 50

FOW Sample LD-R5 / A社-FOW

D/A and Pre-cure

D/A Force 1.0 kgf 1.5 kgf

D/A Time, Temp. 1.0s, 120

Pre-cure 20 min up to 140 + 33 min @ 140 (7atm)

♦ Structure

Substrate

Chip 1

Controller 50 um FOW

Processibility_Embedding simulation ① Test condition

Cond. Before Pre-cure After Pre-cure

Co

ntr

olle

r :

5.4

mm

x 3

.1 m

m

D/A 1.0kg 1.5kg 1.0kg 1.5kg

LD

-R(5

0)

A社

-FO

W(5

0)

② SAT Void

(Good) LD-R > LD-P > A > B (bad)

Coupon

Images LD-P LD-R A B

Optical

Microscope

Total Cl

(ppm) 180 60 180 185

Enhanced HAST property for good reliability

Electrical failure occurs due to corrosion of metal

components or ion migration under HAST condition

M+ M+ M+

Electrode Cu ion migration

Anode (+) Cu Cu2++ 2e-

H2O H+ + OH-

Between (+)/(-) Cu2++ 2OH- Cu(OH)2

Cu(OH)2 CuO + H2O Cu(OH)2 Cu2+ + 2OH-

Cathode(-) Cu2++ 2e- Cu↓ 2H+ + 2e- H2↑

Acceleration Cu2+ + 2Cl- CuCl2

CuCl2 Cu2+ + 2Cl-

LD-R series

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

0 50 100 150 200

Res

ista

nce

(Ω

)

Time (hr)

HAST Coupon Test

LD-P

LD-R

A社

B社

130, 85%RH, 50V

Company confidential

Do not copy or distribute. Copyright @ 2017 LG Chem 9 / 26

Sample LD-R A

Structure Before Pre-cure After Pre-cure Before Pre-cure After Pre-cure

Chip 2

110 FOD

Substrate

Chip 1

Chip 2

110 FOD

Substrate

Chip 1

1.E+02

1.E+03

1.E+04

1.E+05

1.E+06

1.E+07

0 600 1200 1800 2400 3000

Vis

cosi

ty (

Pa.

s)

Time (s)

Isothermal Viscosity at pre-cure temp.

LD-R

A

Ramp up ← → Isothermal

Good controller and wire embedding performance

Viscosity control at pre-cure condition Good gap filling performance

Company confidential

Do not copy or distribute. Copyright @ 2017 LG Chem

10 / 26

LD-R series

90

0

98 95 100 99

0

20

40

60

80

100

120

LD-R A-comA

dh

esiv

e d

ivis

ion

(%

)

Expanding height 5mm Expanding height 7mm Expanding height 9mm

Non-cut

Cold Expanding

GAL Process : Adhesive division GAL Process : Kerf width

LD-R A A

Temp. -10

Blade dicing and S-DBG(or N-DBG) process compatible

Company confidential

Do not copy or distribute. Copyright @ 2017 LG Chem 11 / 26

LD-R series

DAF/BGT/New Material

Under Development LVM / HLM Many new materials are under development at LG Chem

ITEM 2015 2016 2017 2018 2019

DAF

Normal DAF

Process

Integrated

High Modulus

FOW Process

Integrated

FOD Process

Integrated

High

Functional

Anti-ESD

High Thermal

BGT -

Standard (ST)

Thin Die (TD)

Bump (BU)

New Material TSV /

Fan Out

NCF

Temporary Tape

EMF

LD-A (20)

LDA-7A

LDA-7B-P

LDA-200(5) LDA-200(10)

LD-RC

Anti-ESD DAF

High Thermal DAF (2W/mK)

Standard G2 SB6181T

SB7121T

Normal Bump Type High Bump Type

180 Process (HT)

Low Stress Mold EMC

HBM2

LD-A (10)

Thin Die용 DAF

LD-R5

Black FOD

260 Process (UHT)

FOD G2 (Improvement of Process margin)

High Thermal DAF (> 4W/mK)

HBM3

Product Name LD-A246ST LD-A268ST

Adhesive LD-A-20

DCT

PO A B

PSA P1 P1-1

Thickness () 100/10 90/10

LD-A246ST Pick-up issue

Pick-up miss / Die crack

Test sample list

Improvement concept & Expected effectiveness

PO thickness down (100 → 90 )

-. Low Stiffness → Easy deformation of Dicing tape by Pick-up tool (Needle pin / Multi-stage)

→ advantageous die separation(Pick-up) in Die attach Process

-. Low tensile force in cold expansion → decrease Stress concentration in Die separation

→ Die edge lift area ↓ in SDBG Process

PSA minor tuning (increasing Photo Initiator)

-. UV reaction rate ↑ → Peeling strength down in low UV dose / PSA tack force ↓

→ improve Pick-up performance

Change of PO Type : Wide kerf width after heat shrinkage in SDBG Process

[Appendix] LD-A246ST → LD-A268ST

[Appendix] DMA Modulus Graph

1

10

100

1000

10000

-20 30 80 130 180 230 280

Mo

du

lus

(MP

a)

Temperature()

LD-A(B-stage) LDA-5A(B-stage) LD-R(B-stage)

Test condition

-. Frequency: 10Hz, Preload force: 0.05N,

-. Amplitude: 10, Force track: 110%

Temperature() 70 120 130 140 150 160 170 180

LD-A 3.95 1.63 1.55 1.47 1.39 1.33 1.32 1.37

LDA-5A 6.03 2.02 1.90 1.94 2.22 2.79 3.32 4.04

LD-R 1.08 LD-R has low modulus in high temperature. → Get out of Detection limit. ( ≥ 70)

Process Parameter LD-A268ST / LDA-5A23T-40

Wafer Mount condition Temperature () 65 ~ 75

Wafer saw /

Dicing condition

Dicing method Blade / SDBG

Spindle speed (krpm) 45 ~ 50

Dicing speed (mm/sec) 30

Blade height Z2 () 80

Die Separation

Cooling

Temperature () - 15 ~ -10

Expanding Height (mm) 9 ~ 13

Expanding speed (mm/s) 100 ~ 300

Heating

Temperature () 220 ~ 250

Expanding Height (mm) 8 ~ 11

Expanding speed (mm/s) 1 ~ 10

UV exposure Illuminance intensity (mW/cm2) 50 ~ 70 100 ~ 130

Exposure dose (mJ/cm2) 150 ~ 250 100 ~ 150

Die attach condition

Temperature () 110 ~ 130

Force (kgf) 1 ~ 2

Time (s) 0.5 ~ 2

Cure condition

D/A cure

(@Pressure cure Oven)

Temperature / Time Ramp up 10 ~ 20min to 130~140

→ 30min staying @ 130~140

Pressure(atm) 7

Post mold cure Temperature () 175

Time (Hr) ≥ 1

Recommend Process Condition for Normal DAF

Process Parameter LD-R556ST / LD-RC56ST

Wafer mount Temperature () 65 ~ 75

Wafer saw /

dicing condition

Dicing method Blade / SDBG

Spindle speed (krpm) 45 ~ 50

Dicing speed (mm/sec) 30

Blade height Z2 (mm) 0.08 ~ 0.09

Die separation

Cooling

Temperature () -15 ~ -10

Expanding Height (mm) 10 ~ 13

Expanding speed (mm/s) 100 ~ 300

Heating

Temperature () 220

Expanding Height (mm) 8 ~ 11

Expanding speed (mm/s) 10 ~ 30

UV exposure Illuminance intensity (mW/cm2) 50 ~ 70 100 ~ 130

Exposure dose (mJ/cm2) 200 ~ 400 100 ~ 150

Die attach

Temperature () 110 ~ 130

Force (kgf) 1 ~ 2

Time (s) 1 ~ 2

Cure

Pre cure after die attach

(pressure oven)

Ramp up 10 ~ 20min to 140,

30min @ 140, 7atm

Post mold cure ≥ 1hr @ 175

Recommend Process Condition for FOW/FOD