ADVANCES AND TRENDS IN POWER ELECTRONICS AND MOTOR DRIVES BIMAL K. BOSE – Elsevier 2006

Chapter 2

Power Semiconductor Devices

Fig.2.1 EVOLUTION OF POWER SEMICONDUCTOR DEVICES

Bose

Bose

SWITCHING FREQUENCY (Hz)

DEVIC

E V

-I R

ATIN

GS P

RODUCT (VI)

10 !02 103 104 105 10610

102

103

104

105

106

107

108

TRIAC

THYRISTOR

IGBTDISCRETE

IGCTGTO

IGBT IPM

POWERMOSFET

Fig. 2.2 POWER-FREQUENCY TRENDS OF THE DEVICES

Bose

Reverse leakage current

Avalanche breakdown

Forward conduction dropAnode

Cathode

trr

Ir

V

t1 t2 t3

di/dt

Irrm

Time(t)

Qrr

VF

VrrVrrm VR

+IA

-IA

+VA-VA

(a)

(b)

IF

0

Vd

VB

Time(t)

0

Fig. 2.3 (a) DIODE V-I CHARACTERISTICS(b) TURN-OFF SWITCHING CHARACTERISTICS

Bose

A

G

K

P1

N1

N2

P2

N1

P2

A

P1

N1

P2

N2

G

K

A

G

K

T1

T2

IA

IG

IC1IC2

IK

Reverse leakage current

Avalanche breakdown

Forward conduction drop

-IA

+VA-VA

Holding current

Latching current

Forward leakage current

Forward breakover voltage

IG3>IG2>IG1

IG3 IG2 IG1 IG=0

Anode

CathodeGate

+IA

(b)

(a)

＋_

Vd

VB

VBR

a1

a2

Fig. 2.4 (a) THYRISTOR STRUCTURE WITH 2-TRANSISTOR ANALOGY (b) V – I CHARACTERISTICS

Fig.2.5 THYRISTOR FEATURES

SMALL GATE CURRENT PULSE TRIGGERS ON THE DEVICE

CAN NOT BE TURNED OFF BY GATE CURRENT

SYMMETRIC OR ASYMMETRIC VOLTAGE BLOCKING

COMMUTATION METHODS: AC LINE LOAD FORCE

FORCE-COMMUTATED CONVERTERS ARE OBSOLETE

TRIGGERING POSSIBLE BY: DV/DT, TEMPERATURE, LIGHT

TURN-ON DI/DT PROBLEM

CAN CARRY LARGE TRANSIENT FAULT CURRENT

FAST FUSE PROTECTION POSSIBLE

APPLICATIONS WITH PHASE CONTROL:

RECTIFIER DC MOTOR DRIVES CYCLOCONVERTER AC MOTOR DRIVES SOLID STATE INDUCTION MOTOR STARTER,

HVDC SYSTREM, ETC.

Bose

Bose

I+Mode

+IA

-IA

+VA-VA

(a)

(b)

III-ModeT1

T2

Gate

Lamp

120V60Hz

DIAC

R1

C1VC

R

C

Snubber

Fig. 2.6 (a) TRIAC SYMBOL WITH V-I CHARACTERISTICS(b) INCANDESCENT LIGHT DIMMER CIRCUIT WITH TRIAC

Fig.2.7 TRIAC FEATURES

INTEGRATES A PAIR OF THYRISTORS

TURNS ON AT EITHER ANODE VOLTAGE POLARITY BY GATE CURRENT

POOR GATE CURRENT SENSITIVITY

SYMMETRIC BLOCKING

LONGER TURN-OFF TIME (USE 60-400Hz)

PHASE CONTROL WITH RESISTIVE LOAD

APPLICATIONS:

-LIGHT DIMMER -HEATING CONTROL -SOLID STATE AC SWITCH, ETC. -APPLIANCE SPEED CONTROL BY UNIVARSAL MOTOR, etc.

Bose

Bose

R L

FWD

LL

iA

iG

vd

Load

GTO A

K

Leakageinductances

LS

DS

CS

RS

Polarizedsnubber

iG

iA

vAK

0

0

0

td

tS tf Voltage spike

Vd

tt

Tail current

Time(t)

(a)

(b)

didt

+

-

Fig. 2.8 (a) GTO DC-Dc CONVERTER, (b) SWITCHING WAVEFORMS

Fig.2.9 GTO ENERGY RECOVERY SNUBBERS (a) PASSIVE SNUBBER FOR CHOPPER,

(b) ACTIVE SNUBBER FOR HALF-BRIDGE INVERTER Bose

Fig.2.10 GTO FEATURES

TURNS ON BY + ig AND TURNS OFF BY - ig

TURN-OFF CURRENT GAIN 4 ~ 5

SYMMETRIC OR ASYMMETRIC BLOCKING

LOW DV/DT RATING

TURN-OFF TAIL CURRENT

LARGE SNUBBER LOSS (CAN USE REGENERATIVE SNUBBER)

LOW SWITCHING FREQUENCY (TYPICALLY 400 ~ 1000 Hz)

APPLICATION IN HIGH POWER:

CHOPPER DC MOTOR DRIVES INVERTER AC MOTOR DRIVES STATIC VAR COMPENSATORS, etc.

MAGLEV LINEAR SYNCHRONOUS MOTOR DRIVES

Bose

Fig.2.11(a) DOUBLE DARLINGTON TRANSISTOR

(b) TRIPPLE DARLINGTON

Bose

Bose

50μs100μs

500μs

1msDC

NON-REPETITIVETC=25°C

100

10-1

100

101

101 103102

102

COLLECTOR-EMITTER VOLTAGE.VCE.(VOLTS)

CO

LLE

CTO

R C

UR

RE

NT

.I C.(A

MP

ER

ES

)

8000 1200400 1600

0

20

40

80

60

(a)

CO

LLE

CTO

R C

UR

RE

NT

.I C.(A

MP

ER

ES

)

COLLECTOR-EMITTER VOLTAGE.VCE.(VOLTS)

(b)

Tj=125°CIB2=1A

Fig. 2.12 (a) FBSOA OF BJT (POWEREX KD221K03)[9] (b) RBSOA

Fig. 2.13 BJT FEATURES

DARLINGTON TRANSISTOR

- HIGH CURRENT GAIN, LARGE LEAKAGE CURRENT, LARGER DROP

NEEDS NEGATIVE BASE BIAS

ASYMMETRIC VOLTAGE BLOCKING

DOMINANT SECOND BREAKDOWN EFFECTS

- CONTROL BY SNUBBER

SWITCHING FREQUENCY – A FEW kHz

BECOME OBSOLETE RECENTLY

TYPICAL APPLICATIONS:

CHOPPER DC MOTOR DRIVE INVERTER AC MOTOR DRIVE REGULATED DC AND AC SUPPLIES UPS SYSTEM, etc.

Bose

Bose

VDS. DRAIN-TO-SOURCE VOLTAGE（VOLTS）

I D. D

RA

IN C

UR

RE

NT

(AM

PE

RE

S)

0 10 20 30 40 500

10

20

30

40

50

80μs PULSE TEST

7V

5V

4V

8V10V

VGS=6V

VDS

IntegralInverse diode

D

Drain

Source

S

GateG

VGS

(a)

(b)

Fig. 2.14 (a) POWER MOSFET, (b) V-I CHARACTERISTICS [Harris IRF140][10]

Bose

100μs

10ms

DC

OPERATION IN THIS AREA LIMITED BY RDS(ON)

TC=25°CTJ=175°CSINGLE PULSE

11

10

102

102 10310

103

VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

I D.

DR

AIN

CU

RR

ENT

(AM

PER

ES)

2 5 2 5 2 5

2

5

2

5

2

5

IRF142. 3

IRF140. 1

IRF142. 3

IRF140. 1

1ms

10μs

IRF140. 2IRF141.3

Fig. 2.15 SAFE OPERATING AREA (SOA) OF POWER MOSFET (Harris IRF140)[10]

Fig.2.16 POWER MOSFET FEATURES

VOLTAGE-CONTROLLED MAJORITY CARRIER DEVICE

ASYMMETRIC VOLTAGE BLOCKING

HIGH CONDUCTION DROP

LOW SWITCHING LOSS – HIGH FREQUENCY DEVICE

SLOW RECOVERY TIME OF BODY DIODE

MILLER FEEDBACK EFFECT

TEMPERATURE-LIMITED SAFE OPERATING AREA (SOA)

EASY DEVICE PARALLELLING

APPLICATIONS IN LOW VOLTAGE, LOW POWER, HIGH FREQUENCY SWITCHING

SWITCHING MODE POWER SUPPLIES (SMPS)

PORTABLE APPLIANCES AUTOMOBILE POWER ELECTRONICS, ETC.

Bose

Bose

Continous Load

Single Load Pulse

Load CondictionWaveform of Power Loss at Junction

Waveform of Junction

Temperature Rise (TA=Reference

Temp.)

Long Train of Equal Amplitude

Load Pulses

Overload Following

Continuous Duty (Non-Pulsed)

Short Train of Load Pulse

(Equal Amplitude)

Overload Following

Continuous Duty (Pulsed)

o

Time

OP

o

ot0 t1

OP

o

OP

AT

jT

o

P2

P1

tOL

OLt

AT

OLtT

ot0 t1t2 t3 t4t5

OP

t0 t1 t2t3 t4t5

1tT 3tT 5tT

AT

t0 t1 t2

1tT

2tTTA

AT

OLtT

OLt

AT

jT

Time

tOL

P2

P1

Fig. 2.17 DEVICE TJ RISE CURVES WITH JUNCTION POWER LOSS WAVES [9]

(a)

(b) (c)

Fig.2.18 (a) IGBT SYMBOL WITH V-I CHARACTERISTICS [POWEREX CM50TF-28H]

(b) SATURATION CHARACTERISTICS (c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

Bose

Bose

Vd

Q1

Q2

D1

D2

Inductive load

VCE

ICVd

tf tt

Turn-on switching loss

Conduction loss Turn-off switching loss

(a)

(b)

IL

0

0

toff

L

Diode rec. current

Leakage inductance drop

Time(t)

Fig. 2.19(a) IGBT HALF-BRIDGE INVERTER(b) SWITCHING CHARACTERISTICS OF Q1

Fig.2.20 IGBT FEATURES

HYBRID DEVICE – MOS-GATED BJT

“SMART POWER” CAPABILITY

ASYMMETRIC VOLTAGE BLOCKING

SQUARE SOA – SNUBBER OR SNUBBERLESS OPERATION

LOWER INPUT CAPACITANCE AND IMPROVED MILLER EFFECT

MODERN INTELLIGENT POWER MODULES (IPM)

VERY PROMISING EVOLUTIONARY DEVICE

APPLICATIONS IN MODERATE TO HIGH POWER

CHOPPER DC MOTOR DRIVE INVERTER AC MOTOR DRIVE REGULATED DC AND AC SUPPLIES UPS SYSTEM STATIC VAR GENERATOR

ACTIVE FILTER, etc.

Bose

Bose

W

N

Powerex L-series IPM Grid for Six-Pack

Type Voltage(V) Current(A)

PM50CLA060 600 50PM50CLB060 600 50PM75CLA060 600 75PM75CLB060 600 75PM100CLA060 600 100PM100CLB060 600 100PM150CLA060 600 150PM150CLB060 600 150PM200CLA060 600 200PM300CLA060 600 300

PM25CLA120 1200 25PM25CLB120 1200 25PM50CLA120 1200 50PM50CLB120 1200 50PM75CLA120 1200 75PM75CLB120 1200 75PM100CLA120 1200 100PM150CLB120 1200 150PM300CLA120 1200 300

15V

15V

Fault

WN INPUT

VN INPUT

UN INPUT

N S

IDE

INTE

RFA

CE

MO

TOR

LIN

E

INPUT

FAULT OUTPUT

FAULT

INPUT

15V

6-P

AC

K T

HIR

D G

EN

ER

ATI

ON

IPM

CS

+

N

P

U

W

V

FO

WN

VN

UN

VN1

VNC

VWP1

WP

WFO

VWPC

VVP1

VP

VFO

VWPC

VUP1

UP

VUPC

UFO

WP IN

TER

FAC

E

VP IN

TER

FAC

E

UP IN

TER

FAC

E

10uF

20k 0.1uF

SAME AS UP NTERFACE

CIRCUIT

33uF

20k

20k

20k

0.1uF

0.1uF

0.1uF

+

+

+

U V

P

15V

INPUT

FAULT OUTPUT

SAME AS UP NTERFACE

CIRCUIT

+

Fig. 2.21 IGBT 6-PACK INTELLIGENT POWER MODULE (IPM) WITH GATE DRIVE INTERFACE LOGIC [pwrx.com]

Fig. 2.22 IGCT WITH INTEGRATED PACKAGING OF GATE DRIVER

Bose

Fig.2.23 IGCT FEATURES

BASICALLY HARD-DRIVEN GTO (TURN-OFF CURRENT GAIN ~ 1) BUILT-IN MONOLITHIC ANTI-PARALLEL DIODE

GATE DRIVER IS BUILT IN THE MODULE

ASYMMETRIC OR SYMMETRIC VOLTAGE BLOCKING

CONDUCTION DROP –LOWER THAN IGBT

SWITCHING FREQUENCY – TYPICALLY 1.0 kHz

(COMPARABLE TO IGBT)

SQUARE SOA

SNUBBER OR SNUBBERLESS OPERATION

APPLICATIONS IN HIGH POWER:

INVERTER MOTOR DRIVES DC-LINK HVDC SYSTEM STATIC VAR COMPENSATOR SHIP PROPULSION, etc.

Bose

Fig.2.24 Comparison of Power MOSFET-IGBT-GTO-IGCT _________________________________________________________________________________ Power MOSFET IGBT GTO IGCT 1.Voltage and current 100 V, 28 A* (dc) 1.2 kV, 50 A* (dc) 6 kV, 6000 A*(pk) 4.5 kV, 4000A*(pk) ratings (selected device for comparison) 2. Present power capability 1.2 kV, 50 A 3.5 kV, 1200 A or higher 6 kV, 6000 A 6.5 kV, 3000 A 3. Voltage blocking Asymmetric Asymmetric* Asymmetric/Symmetric Asymmetric/Symmetric 4. Gating Voltage Voltage Current Current

5. Junc. Temp. range (C) -55 to 175 -20 to 150 -40 to 125 -40 to 125 6. Safe operating area Square Square 2nd breakdown Square 7. Conduction drop (V) 2.24 2.65 3.5 2.7

at rated current 8. Switching frequency 106 Hz 1 kHz - 20 kHz 400 Hz 1.0 kHz 9. Turn-off current gain __ __ 4 to 5 1 10. Turn-on di/dt __ __ 500 A/s 3,000 A/s 11. Turn-on time 43 ns 0.9 s 5 s 2 s 12. Turn-off time 52 ns 2.4 s 20 s 2.5 s 13. Snubber Yes or No Yes or No Yes(heavy) Yes or No 14. Protection Gate control Gate control Gate control or Gate control or very fast fuse very fast fuse 15. Applications Switching power supply Motor drive Motor drives Motor drives Low power motor drive UPS, Induction heating, etc. SVC, etc. HVDC, SVC, etc. 16.Comments Body diode can carry Large power range dv/dt = 1000 V/s Built-in diode full current but sluggish Very important High uncontrollable High uncontrollable (trr = 150 ns) device currently surge current surge current Ipk = 56 A * Reverse blocking available dv/dt = 4000 V/s ___________________________________________________________________________________________________________________ *Harris IRF140 *POWEREX PM50RVA120 *Mitshibishi *ABB 5SHY35L4512 7-pack IPM -FG6000AU-120D

Bose

Fig. 2.25 NEXT GENERATION POWER SEMICONDUCTOR MATERIALS

SILICON CARBIDE – DIAMOND

LARGE BAND GAP

HIGH CARRIER MOBILITY

HIGH ELECTRICAL CONDUCTIVITY

HIGH THERMAL CONDUCTIVITY

RESULT

HIGH POWER CAPABILITY

HIGH FREQUENCY

LOW CONDUCTION DROP

HIGH JUNCTION TEMPERATURE

GOOD RADIATION HARDNESS

Bose

0

SWITCHING FREQUENCY (kHz)

50

100

150

200

250

300

PO

WE

R L

OS

S (W

ATTS

)

SiC MOSFET WITHSiC DIODE

SiC MOSFET

5 10 15 25 3020

IGBT WITH PIN DIODE

IGBT

SiC DIODE

PIN DIODE

Fig. 2.26 COMPARISON OF TOTAL POWER LOSS IN Si AND SiC BASED DEVICES

FOR HALF-BRIDGE PWM INVERTER [Vd = 400 V, IL = 15A]

Bose

Fig. 2.27 POWER INTEGRATED CIRCUIT(PIC) FEATURES

MONOLITHIC INTEGRATION OF POWER, CONTROL AND PROTECTION ELEMENTS – SMART POWER

ADVANTAGES OF COST, SIZE, EMI PROBLEM AND RELIABILITY

ISOLATION PROBLEM OF LOW AND HIGH VOLTAGE DEVICES

THERMAL MANAGEMENT PROBLEM

EXAMPLE COMMERCIAL PICs:

STEPPER MOTOR DRIVE BRUSHLESS DC MOTOR (BLDM) DRIVE H-BRIDGE INVERTER CHOPPER FOR DC MOTOR DRIVE GATE DRIVER FOR IGBT DC-DC CONVERTER

Bose

Bose

Fig.2.28 POWER INTEGRATED CIRCUIT FOR DC MOTOR DRIVE [Harris -HIP4011][18]

CONTROL LOGIC B

CONTROL LOGIC A

LE

VE

L S

HIF

TER

AN

D O

C/O

T LI

MIT

ER

OV

ER

-TE

MP

LIM

IT

LEV

EL

SH

IFTE

R

A

ND

OC

/OT

LIM

ITE

R

A1

H

L

H

L

X

A2

L

L

H

H

X

ENA

H

H

H

H

L

OUTPUT

OUTA

OH

OL

OL

OL

Z

B1

L

H

L

H

X

B2

L

L

H

H

X

ENB

H

H

H

H

L

INPUTS

SWITCH DRIVER A

INPUTS

SWITCH DRIVER B

OUTPUT

OUTB

OH

OL

OL

OL

Z

TRUTH TABLE

OFFON

BREAK

DIRECTION

ENABLE ENA

A2

A1

ENB

B2

VDDA VDDB

V+

Q1

Q2

Q3

Q4

D1

D2

D3

D4

VSS

(LOGIC GROUND)

VSSA

OUTA OUTBVSSB ILF

V-LOAD

B1

Fig.2.29 ADVANCES AND TRENDS OF POWER SEMICONDUCTOR DEVICES

MODERN POWER ELECTRONICS EVOLUTION PRIMARILY FOLLOWED THE POWER DEVICE EVOLUTION - WHICH AGAIN FOLLOWED THE MICROELECTRONICS EVOLUTION

GRADUAL OBSOLESCENCE OF PHASE CONTROL DEVICES (THYRISTOR,

TRIAC)

DOMINANCE OF INSULATED GATE CONTROLLED DEVICES (IGBT, Power MOSFET)

POWER MOSFET WILL REMAIN UNIVERSAL IN LOW VOLTAGE HIGH

FREQUENCY APPLICATIONS

GRADUAL OBSOLESCENCE OF GTOs (LOWER END BY IGBTs AND HIGHER END BY IGCTs)

REDUCTION OF CONDUCTION DROP IN HIGH VOLTAGE POWERMOSFET

AND IGBT

SiC BASED DEVICES WILL BRING RENAISSANCE IN HIGH POWER ELECTRONICS – DIAMOND DEVICES IN THE LONG RUN

Bose