innovative embedded technologies to enable thinner iot ...€¦ · innovative embedded technologies...
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Innovative Embedded Technologies to Enable
Thinner IoT/Wearable/Mobile Devices
Jensen Tsai Deputy Director, SPIL
Wearable
Internet of Things
Automotive
Mobile Devices Building
a Smarter World
Building a Smarter World
2
Antenna in SiP
Die on CAP
Embedded Die SBT
Embedded Trace SBT
Fan-Out WLP
Molded WLCSP
Partition EMI Coating
Two Side PKG
FC-MISBGA
Embedded Technologies
3
Antenna in SiP
Die on CAP
Embedded Die SBT
Embedded Trace SBT
Fan-Out WLP
Molded WLCSP Two Side PKG
FC-MISBGA
Embedded Technologies
Partition EMI Coating
4
MCU + BLE COB Size : 18x12mm
BLE Locker BLE Toy iRhytm
Hearing Aid Swimming Band Hand Band
Module Miniaturization
WiFi Speaker
MCU + WiFi COB Size : 22x19mm
WiFi Sensor Hub
WiFi Plug
WiFi Bulb WiFi Air Conditioner
10*10mm 6.5*6.5mm
Antenna in SiP
Die on CAP
1
2
Two Side PKG
EMI Coating 3
4
5
Antenna in SiP Modules
Sub. Baking
SMT (Comp & Ant)
D/B (DB1 & DB2)
W/B (WB1 & WB2)
MD
Singulation Laser Marking
FT
De-flux Cleaning
SMT
D/B & W/B
MK, FS & SF
• Status : MP from 2013/Dec Application : BLE (2.4GHz),
• HVM > 10 M Units, Yield > 99.5%
QUAL Test Result
Test Item
Pre-Con
TCT Hast uHast TST HTSL
Cycles
300/500 1000 1500 2000
96 96 300 500
500 1000 1500 2000
Result Pass Pass Pass Pass Pass Pass
Status : Mass Production
1
6
One-Piece metal frame is assembled by SMT
EMI partition shielding wall
Antenna Frame Antenna routing on substrate
One-piece metal frame assembly, having 2 function devices (antenna & EMI partition shielding wall ) after sinulation.
Arrange support pin out of package to optimize design area in package
Singulation
Sputter coating
• Status : Qualification
Antenna in Package with EMI Shield 1
7
Stack Die on Passives
QUAL Test Result
Test Item
Pre-Con
TCT Hast uHast TST HTSL
Cycles
300/500 1000 1500 2000
96 96 300 500
500 1000 1500 2000
Result Pass Pass Pass Pass Pass Pass
SMT (Passives Attach)
D/B & W/B MD Singulation
2
8
• Status : Mass Production
EMI Coating Process Flow
F/C RLC X’tal
RLC X’tal F/C
RLC X’tal
Saw
F/C
RLC X’tal F/C
Prior Assembly
Pre-baking
Molding
PMC
Laser Marking
Singulation
Baking
Sputter Coating
VM
QUAL Test Result
Test Item Pre-Con
TCT uHast HTSL
Cycles 500x 1000x 96 500 1000
Result Pass Pass Pass Pass Pass Pass
• Sputtering machine : LINCO SERIES
• Coating Material : SUS+Cu+ SUS
• Min Top Cu Thickness : 2um min.
• Top SUS Thickness : 0.1um min.
3
9
• Status : Mass Production
10
Partition EMI Coating
• Application :
(1) Multi-Band RF SiP Modules (CDMA / LTE / Dual Band WiFi)
(2) EMI sensitivity SiP Modules (AP + PMIC + 802.11ac, ..)
• Advantage:
(1) Light & Compact Module Size
(2) Flexible Shielding Design
(3) Miniaturization, higher performance, lower cost and higher integration
EMI Metal Frame Shielding
EMI Coating w/ Partition
3
• Status : Qualification
Double Side Package for PMIC Module
- PKG size: 16*14mm
- Top side WLCSP : 5.97mm*4.82mm, function : PMIC
QFN : 3 mm *3 mm, function : LCD Driver
Passive : 48 ea
- Bottom side WLCSP : 4.5 mm *4.5mm , function : RGB Converter
Passive : 115 ea
PKG Information:
Top Side Bottom Side
LCD Driver
(DC/DC Booster)
RGB Converter
Pre-con MSL3 /260 ℃
TCT (-55C~115°C)
TCT (-55C~115°C)
HAST (130°C, 85%RH)
HTST (150 ℃)
(w/o precon)
HTST (150 ℃)
(w/o precon)
Reflow 3X 500X 1000X 96hrs 500hrs 1000hrs
Pass Pass Pass Pass Pass Pass
4
11
• Status : Qualification
Antenna in SiP
Die on CAP
Embedded Die SBT
Embedded Trace SBT
Partition EMI Coating
Two Side PKG
FC-MISBGA
Embedded Technologies
Fan-Out WLP
Molded WLCSP
12
TDK PMIC modules with EDS
Key process : EDS (Embedded Die Substrate)
13
PMIC Modules for smart phone
13
EDS (Embedded Die Substrate, for PMIC)
Base Information:
•Package size / IO: 5.8*5.8/145
• Max package height: 1.4mm
• Capacitor:
• 0603_2P/X5R/10UF/6.3V/+/-20%_T=0.55MM
• 0603_2P/X5R/4.7UF/10V/+/-10%_T=0.55MM
• 0402_2P/X5R/1UF/16V/+/-10%_T=0.55MM
•Substrate vendor: IBIDEN / Kinsus /TDK
No any abnormal be found by X-Ray
IPQC & RT Status All acceptable !
STATION IN Q'TY DEF. Q'TY OUT Q'TY YIELD
( PCS ) ( PCS ) ( PCS ) ( % )
SMT 365 0 365 100.00%
LASER MARKING 365 0 365 100.00%
SINGULATION 365 0 365 100.00%
OS 365 0 365 100.00%
FINAL VISUAL 365 0 365 100.00%
No delam be found by X-section
Lid adhesion
By solder paste
14
• Major Concern : Mass Production Yield Loss
Antenna in SiP
Die on CAP
Embedded Die SBT
Embedded Trace SBT
Partition EMI Coating
Two Side PKG
FC-MISBGA
Embedded Technologies
Fan-Out WLP
Molded WLCSP
15
IO Count Flip Chip Package Segment (Sweet Spot)
3x3
7x7
11x11
15x15
19x19
23x23
27x27
31x31
35x35
40x40
45x45
50x50
55x55
60x60
65x65
100 200 300 400 500
1000
2000
3000
4000
PKG Size (mm)
FCCSP
PoP
FCBGA
Large
FCBGA FO-PoP / HBW-PoP / PoP
(High I/O density & Low PKG profile)
Si Interposer / FO-MCM + FCBGA Large FCBGA
(High I/O density)
Si Interposer
FO-PoP HBW-PoP
FO-MCM + FCBGA
Substrate
IC IC
Si Interposer
FC-ETS FO-SD
16
FC-MISBGA
4
Source:
CORE
Normal Sub.
Embedded Sub.
PP
Embedded Trace Substrate (ETS) L/S < 20/20 um
17
• PKG type: FC-ETS (MUF)
• PKG size: 12x12x 0.75 mm
• Die size: 6.6x6.2x0.15 mm
• Bump pitch: 110 um
• Bump Height: 58 um (Cu 33/SiAg 25)
• Mold cavity : 0.45 mm
• Substrate thickness: 0.126 mm w/ 2L ETS
• Ball pitch/ diameter: 0.4mm /0.25mm
• IO count: 488
Package Information:
Reliability Test:
O/S Yield Pre-con MSL2aa/3 /260 ℃
HTST (150 ℃)
TCT (-65~150 ℃)
HAST
>99% Reflow 3X 1000hrs 1000X 192hrs
PASS PASS PASS PASS
X-ray top view
X-Section
SAT
Void Free (MUF)
2L FC-ETS L/S=15/15 um
18
• Status : Mass Production
• PKG type: FC-ETS (CUF & MUF)
• PKG size: 14x14x 0.9 mm
• Die size: 11x11x0.1 mm
• Bump pitch: 65um/80 um
• Bump Height: 58 um (Cu 35/Ni 3/SiAg 25)
• Mold cavity : 0.45 mm
• Substrate thickness: 0.188 mm w/ 3L ETS
• Ball pitch/ diameter: 0.4mm /0.25mm
• IO count: 976
Pkg Information:
Reliability Test:
O/S Yield Pre-con MSL2aa/3 /260 ℃
HTST (150 ℃)
TCT (-65~150 ℃)
HAST
>99.5% Reflow 3X 1000hrs 1000X 192hrs
PASS PASS PASS PASS
X-ray top view
X-Section
SAT
80um pitch / 2 escape 65um pitch / 1 escape
Void Free (CUF) Void Free (MUF)
3L FC-ETS with fine pitch L/S=8/10 um
19
• Status : Qualification
Antenna in SiP
Die on CAP
Embedded Die SBT
Embedded Trace SBT
Partition EMI Coating
Two Side PKG
FC-MISBGA
Embedded Technologies
Fan-Out WLP
Molded WLCSP
20
Substrate via is formed by photolithography and Cu plating rather than laser drilling
Embedded trace, L/S >= 10/10um
NPL design
(Cu trace + Pre-Mold)
Mold Compound
MIS Substrate (Lower cost, Small form factor)
Metal Carrier Pre-treatment
(Cu plating) Image transfer (For top trace)
Cu plating (1st layer)
Image transfer (For ball pad)
Cu plating (2nd Cu layer)
Dry Film Stripping Molding Window Etching/Detach
and OSP coating
Topside View Bottom View
21
• PKG type: FC-MISBGA (MUF)
• PKG size: 12*12 mm2
• Die size: 6.2*6.8 mm2
• Bump pitch: 55/110um
• Bump Height: 58 um (Cu pillar)
• Wafer thickness : 150 um
• Mold cavity : 0.45mm
• Substrate thickness: 0.12 mm
• Trace Line/Space: 20/20um
• Ball pitch: 0.4 mm
• Ball Size: 0.25 mm
• IO count: 400
Base Information:
1L FC-MISBGA Readiness L/S=20/20 um
Reliability Test:
Pre-con MSL2a /260 ℃
TCT (-65~150 ℃)
HAST HTSL
Post reflow 3X 500X 1000X 192hrs 1000hrs
PASS PASS PASS PASS PASS
X-ray top view
X-Section SAT
22 Confidenti
al
• Status : Mass Production
22
• Package size: 12*12 mm
• Max. Package thickness: 0.9mm
• Mold thickness: 0.45mm
• Die size: 7*5 mm
• Die thickness : 8mil (200um)
• Bump pitch : 150um with 2 escaping traces
• Trace Line/Space: 15/15um
• Ball stand off height: 0.18mm
• Substrate thickness: 0.11mm
• Ball size /ball pitch : 0.25 / 0.4mm
Base Information:
In-line Process Quality:
Process Checking Item Criteria Sample
Size Result
Die Bond Non-wetting Not allow 100% Pass
Accuracy ±15um 100% Pass
Molding Incomplete fill
<250um
<1% die area 100% Pass
De-lamination Not allow 100% Pass
X-ray top view
X-Section X-ray top view
SPEC: <100um, Actual: <60um Shadow Moire
Crying (+) Smiling (-)
2L FC-MISBGA Readiness L/S=15/15 um
23
• Status : Mass Production
Antenna in SiP
Die on CAP
Embedded Die SBT
Embedded Trace SBT
Fan-Out WLP
Molded WLCSP
Partition EMI Coating
Two Side PKG
FC-MISBGA
Embedded Technologies
24
WLCSP mWLCSP
Mold
Compound
WLCSP with Backside lamination
mWLCSP with Backside lamination
Mold
Compound
Backside
lamination
Backside
lamination
Silicon
Solder
Ball
Mold
Compound
Mold Compound on Sidewall and Ball Side
mWLCSP Construction
5 Sides mWLCSP vs WLCSP
6 Sides mWLCSP vs WLCSP
Solder
Ball
UBM
PSV1 PSV2
SiN
RDL Trace
C
D Molding
C: 10um
D: 70um
500um 330um
25
Die
Mold
Compound
Solder Ball
Top view Side view
Advantage : Enhance board level TC
Decrease ELK stress
Zero side wall crack dppm (same wafer sort as WLCSP)
LG + ½ Die Saw Molding 100% Wafer
Probing Grinding UBM & BP SG &TR
Sidewall crack check by FIB
BSL
(optional)
Process Flow
mWLCSP Purpose
26
Die Die
Wafer Scribe Line (80um)
45
(1st Saw)
Molding
45
Die Die
Grinding
45
EMC
Sidewall
EMC
Sidewall
(1st Saw)
(2nd Saw)
BSL
mWLCSP Brief Process Flow
27
Wafer form, top side molding After singulation, EMC left at side wall
4
Before Clean
Solder Ball Clean
Die
Mold Solder Ball
Blade/Laser Saw
tape
Die Die
Laser
Key Challenges of mWLCSP
Singulation
Warpage post Grinding Topside Mold Thickness
After Clean
28
SMT Confirmation
SMT Confirmation:=> Good wetting
SMT has Good wetting (no bridge & no non-wetting)
After reflow process
Ball
(Sample size, 120pcs)
Left side Right side Center Center
BLR SMT X-section result:
Package information: - Die size: 7x7mm
- Die thickness: 200um
- Ball Pitch/Size/Height: 0.4mm / 250um /190um
mWLCSP SMT
29 • Status : Small Volume Mass Production
Antenna in SiP
Die on CAP
Embedded Die SBT
Embedded Trace SBT
Fan-Out WLP
Molded WLCSP
Partition EMI Coating
Two Side PKG
FC-MISBGA
Embedded Technologies
30
Fan-Out Solutions & Its Potential Applications I/O
Density
RDL
L/S(um) PKG Solution Application
Ultra
High
0.1
↓
2
High
2
↓
10
Low
>10
>15
Middle variability
2.5D (COWOS)
FO-PoP
1L FC-MIS
FO-MCM
HBW-PoP
FO-SD
Die #1 Die #2
Heat Spreader
Die #1 Die #2
Heat Spreader
FO-SIP SIP Module
2L MIP (FCCSP) FO-MCM
Mobile Application: 1. Smart Phone & Tablet
2. High End AP/BB
High-End Application: 1. High performance computing
2. Networking
3. Data servers
Low Pin Count Application:
(PMIC/RF...)
IoT/Wearable Application: 1. Connectivity
2. PMIC Module
Memory Application:
(DRAM, mLPDRAM...)
Various FO technologies to fulfill potential product applications
31
31
5.64 x 4.1mm
7.4 x 5.8mm
360/405 (POD: 0.65mm)
PMIC
Layer 1L
L/S 10/10
0.25 mm
0.4 mm
200
Ball Size
Ball Pitch
I/O Count
Basic Information
Chip Dimension
Package Dimension
Application
RDL
Die/Mold THK (um)
Die
360um
Compound
405um
POD: 0.65mm
405 um
DIE
SOLDER BALL
PSV1
PSV2 RDL
MC
360 um
650 um
Reliability Result:
TEST LEVEL TEST ITEM SAMPLE
SIZE RESULT
PACAKGE
Level
PRECON 90pcs PASS
HTSL (1000 Hrs.) 45pcs PASS
uHAST (196 Hrs.) 45pcs PASS
TCB 1000 CYCLE 45pcs PASS
12” FO-SD (Single Die) 1 RDL Layer L/S=10/10 um
32
• Status : Qualification
Drop Test (1500G, 0.5 ms, 30 drops) TCT (-40℃~125℃ , 500 cycles)
SAC_Q
TEST
LEVEL TEST ITEM SAMPLE SIZE Results First Failure
Board Level
Drop Test 30 units PASS 157x
TCT >500 30 units PASS 703x
SAC_Q(Cyclomax): Sn4Ag0.5Cu0.05Ni3Bi0.007Ge
12” FO-SD (Single Die) 1 RDL Layer L/S=10/10 um
33
FO-MCM(Multi-Chip Module) for AP/DDR L/S=2/2 um
5
Condition Criteria S/S
Precon Level 3 / 260 40/40 PASS
TCB -55°C ~ 125°C, 1000X 25/25 PASS
HTS 150°C, 1000Hrs 10/10 PASS
uHAST 130°C / 85%, 96Hrs 15/15 PASS
Basic Information:
15x14mm package
( THK 0.62mm w/ BGA ball)
Two top die 11x8mm,11x4.5mm
I/O: 1188
Application: Tablet BB
Top Die
2/2 RDL1
5/5 RDL2
10/10 RDL3
Via
MUF
u-bump MUF
34 Confidential 34
No delam. issue & Pass RA test Status : Engineering
FO_SiP Concept z-height 0.8mm
Multi Chips Module w/ EMI Shielding
800um
DSC (0201 & 01005) > 50pcs
CSP die
EMI
MUF Sidewall EMI
UBM
RDL1
RDL2
RDL3
PSV1
PSV2
PSV3
PSV4
BP 0603
MUF
No delam. issue & Pass RA test Status : Engineering 35
Summary
Antenna in SiP
Die on CAP
Embedded Die SBT
Embedded Trace SBT
Fan-Out WLP
Molded WLCSP
Partition EMI Coating
Two Side PKG
FC-MISBGA Building
a Smarter World
36
Various embedded technologies fulfilling product applications !!
Contact Information:
Solution Providing Innovative Leader