instrumentation on silicon detectors: from properties

Silicon Photomultiplier - characteristics and applications -

Nicoleta Dinu Laboratory of Linear Accelerator, IN2P3, CNRS, Orsay, France

Seminar at Geneva University, DPNC, 21.05.2014

1

OUTLINE

PART A:

◦ Silicon Photomultiplier (SiPM)

Introduction on solid state photon detectors

SiPM design and physics principle

SiPM electrical and optical characteristics

SiPM arrays

PART B:

◦ SiPM applications

Intra-operative probes for tumors localization during cancer

surgery

Compact imaging gamma camera (SIPMED)

2

PART A: Silicon Photomultiplier

3

4

~ 4

µm

GM-APD

p+-type silicon (substrate)

-epilayer

p+ n+

high electric field

multiplication region

e-

h+

PN or PIN

P+ - Type

N – Type Silicon

APD

p-n junction,

reversed Vbias – 0-3 V

p-n junction,

reversed Vbias < VBD

p-n junction,

reversed Vbias > VBD

Gain = 1 Gain = M (~ 50-500)

- linear mode operation-

Gain → infinite

-Geiger-mode operation-

Review of solid-state photon detectors (1)

APD • VAPD < Vbias < VBD

• G = M (50 - 500)

• Linear-mode operation

• Operate at medium light level (tens of photons)

Photodiode • 0 < Vbias < VAPD (few volts)

• G = 1

• Operate at high light level

(few hundreds of photons)

GM-APD or SPAD • Vbias > VBD (Vbias-VBD ~ few volts)

• G

• Geiger-mode operation

• Can operate at single photon level

Absolute reverse voltage

Absolute reverse voltage

p-n junction working in reverse bias mode

5

Review of solid-state photon detectors (2)

6

R.H. Haitz J. Appl. Phys., Vol. 36, No. 10 (1965) 3123

J.R. McIntire IEEE Trans. Elec. Dev. ED-13 (1966) 164

h

Rs=50

GM-APD n+ (K)

p++ (A)

Rq

-Vbias

output

Passive quenching circuit

The first single photon detectors operated in Geiger-mode

Geiger-Mode Avalanche Photodiode

Active quenching circuit

S. Cova & al., Appl. Opt., Vol. 35, No 12 (1996) 1956

GM-APD

Active resistor made of MOS transistor

controlled by a fast electronics

SiPM cell – design & physics principle

7

GM-APD (p-n junction) connected in series with quenching resistance RQ

GM-APD and RQ – on the same substrate

Digital device Q = Q1 = Q2 = …= Qn

Volt

age (

a.u

.)

Time (a.u.)

Standard output signal No information on light

intensity

C. Piemonte, …, N. Dinu…, IEEE TNS, Vol. 54, Issue 1, 2007

8

SiPM – design & physics principle

1 pixel fired

2 pixels fired

3 pixels fired

Parallel array of -cells on the same substrate

◦ Each -cell: GM-APD in series with RQ

Analog device

Qtot = Q1 + Q2 + …= nQ1

1 m

m

1 mm

E

depth

SiPM / FBK

1 m

m

1 mm

E

depth

SiPM / Hamamatsu

Output signal number of fired

cells that is the number of

photons (if efficiency = 1)

’90s by V.M.Golovin & Z.Sadygov, Russian patents

Metal grid Rquench

pn junctions

Geiger-Mode

Si substrate

SiO2 + Si3N4 epi layer

300µ

2-4µ

OUT

10-100µ

VBIAS

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SiPM – few examples of design & packages

1x1mm2

3x3mm2

Hamamatsu HPK (http://jp.hamamatsu.com/)

10x10, 15x15 , 25x25, 50x50, 100x100µm2 cell size

FBK-IRST (http://advansid.com/home)

50x50µm2 pixel size

KETEK (http://www.ketek.net/)

25x25, 50x50, 100x100µm2 cell size

SensL (http://sensl.com/)

20x20, 35x35, 50x50, 100x100µm2 cell size

1.2x1.2 mm2

3x3 mm2

6x6 mm2

1x1 and 3x3 mm2

http://advansid.com/home

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SiPM characteristics:

• DC measurements in the dark & room temperature

• Reverse and forward IV characteristics

• AC measurements in the dark & room temperature

• Signal shape

• Gain

• Dark count rate

• Optical measurements at room temperature

• Photon detection efficiency

• Timing resolution

• Temperature dependence

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DC characteristics @ 25°C

• Technical team: V. Chaumat, JF. Vagnucci

• Lab course @ EDIT & MC-PAD schools at CERN, 2011

Recovery time: cell RQCdiode Overvoltage: V = VBIAS - VBD

N. Dinu et al., NIM A, 610, 2009 N. Dinu et al., NIM A, 610, 2009

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SIGNAL SHAPE @ 25°C

SiPM

Vcc

Pt100

metallic box

Climatic chamber ±0.1°C

TDS 5054

500MHz, 5GS/s

GPIB

Keithley 2611

Vbias & PicoA

0.01-

500MHz

LabView

Keithley

Multimeter 2000

Technical team: V. Chaumat, JF. Vagnucci, Z. Amara, C. Bazin

rise RD(CD+CQ)

fall slow RQ (CD+CQ)

fall fast Rload (Ctot+Cg)

N. Dinu et al., NIM A, 610, 2009


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GAIN @ 25°C

e

BDBIASQD

e

QD

e q

VVCC

q

VCC

q

QG

Number of charge carriers developed during avalanche discharge

G increases linearly with V = VBIAS – VBD

the slope of linear fit of G vs. V Ccell = CD + CQ

G and Ccell increase with cell geometrical

dimensions

d

AC Si 0



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Dark count rate @ 25°C • The number of pulses/s registered by the SiPM in the absence of the light

• It limits the SiPM performances (e.g. single photon detection)

• Three main contributions:

• Thermal/tunneling – thermal/ tunneling carrier generation in the depleted region

looks the same as a photon pulse

• After-pulses – carriers trapped during the avalanche discharging and then released triggering a

new avalanche after the breakdown

• Optical cross-talk – 105 carriers in an avalanche breakdown emit in average 3 photons with an energy

higher than 1.14 eV (A. Lacaita et al. IEEE TED 1993)

– these photons can trigger an avalanche in an adjacent µcell

th=0.5pe

th=0.5pe

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Dark count rate @ 25°C

Critical issues:

Quality of epitaxial layer

Gettering techniques

DCR – linear dependence due to triggering probability V

- non-linear at high V due to cross-talk and after-pulses V2

DCR scales with active surface

N. Dinu et al., NIM A, 610, 2009 N. Dinu et al., NIM A, 610, 2009

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Photon Detection Efficiency (1)

geomphotonspulses PQENNPDE 01

QE P01 geom

Technical team: V. Chaumat, JF. Vagnucci, C. Bazin

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Photon Detection Efficiency @ 25°C (2)

Hamamatsu cell

• p+n GM-APD on n-type substrate

• Peak of PDE optimized for blue light

(420 nm)

FBK & SensL cell

• n+p GM-APD on p-type substrate

• Peak of PDE optimized for green light (500-600nm)

•PDE is depending on the SiPM cell structure • p+/n cell is more blue sensitive than n+/p • electron triggering probability is higher than hole triggering

SiPM’s from 2007 productions, 1x1 mm2


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Single photon timing resolution @ 25°C

FBK-irst SiPM single photon timing resolution

Two components : • fast component of gaussian shape with σ O(100ps)

• due to photons absorbed in the depletion region

• its width depends on the statistical fluctuations of the

avalanche build-up time

(e.g. photon impact position cell size)

• slow component: minor non gaussian tail with

time scale of O(ns)

• due to minority carriers, photo-generated in the neutral

regions beneath the depletion layer that reach the junction by

diffusion

MePhI/Pulsar

Poisson

statistics:

σ ∝ 1/√Npe

SPT

R

G. Collazuol et al., NIM A, 581, 2007 Courtesy of G. Collazuol (not published)

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Thermal effects

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Gain vs. bias voltage vs. temperature

Breakdown voltage vs temperature

T=+55°C T=-175°C

SiPM Hamamatsu

1x1 mm2, 50x50m2

Production 2007

T=+55°C T=-175°C

SiPM Hamamatsu

3x3 mm2, 50x50m2

Production 2011

C.R.Crowell and S.M.Sze

Appl. Phys. Letters 9, 6(1966)

SiPM Hamamatsu

3x3 mm2, 50x50m2

Production 2011

SiPM Hamamatsu

1x1 mm2, 50x50m2

Production 2007

N. Dinu, A. Nagai, A. Para, not published

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Gain vs. overvoltage vs temperature

Capacitance & quenching resistance vs. temperature

SiPM Hamamatsu

1x1 mm2, 50x50m2

Production 2007

SiPM Hamamatsu

3x3 mm2, 50x50m2

Production 2011

Slope → Cµcell=125±10fF

8%

SiPM Hamamatsu

1x1 mm2, 50x50m2

Production 2007

Slope → Cµcell=90±5fF

5%

SiPM Hamamatsu

3x3 mm2, 50x50m2

Production 2011

SiPM Hamamatsu

3x3 mm2, 50x50m2

Production 2011

SiPM Hamamatsu

1x1 mm2, 50x50m2

Production 2007

50 m

42 m

50 m

38 m

d

AC Si 0


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Signal shape vs. temperature

Dark count rate vs. temperature

SiPM Hamamatsu

1x1 mm2, 50x50m2

Production 2007

T=+55°C

T=-175°C

fall slow 40ns@+55°C250ns@-175°C

SiPM Hamamatsu

3x3 mm2, 50x50m2

Production 2011

T=+55°C

T=-175°C fall slow 80ns@+55°C200ns@-175°C

SiPM Hamamatsu

1x1 mm2, 50x50m2

Production 2007

T=+55°C

T=-25°C SiPM Hamamatsu

3x3 mm2, 50x50m2

Production 2011

T=+55°C

T=-25°C

T=-100°C T=-100°C


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Arrays of SiPM - monolithic

Nicoleta Dinu

24

Arrays of SiPM - discrete

Nicoleta Dinu

25

PART B: SiPM applications – medical imaging

Techniques of nuclear imaging

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Pharmaceutical product:

• organic molecules + radioactive isotope

• Radioactive isotopes • 99mTc, 123I, 201Tl, 18F, 11C

• Emitters , + or -

Techniques of nuclear imaging

• camera, topographies

• Techniques

TEMP TEP

Cancer diagnostic (homographs)

Cancer therapy Per-operative detection systems

Marking Detection • Principle

SIPMED project High resolution hand-held radiation detector for therapeutic purposes

SIPMED imaging camera

collimator

LaBr3(Ce) scintillator

16 (4x4) SiPM arrays

field of view: 30 cm2

256 readout channels (ASIC) on

miniaturized electronics boards

5.5 cm

6 c

m

S11828-3344M Hamamatsu HPK • 4x4 monolithic SiPM array

• mounted on a SMD package

• Each SiPM = one readout channel:

•3x3 mm2, 3600 cells, each cell - 50x50 m2

Radio-guided surgery

Detection system requirements in surgical conditions • reduced size and weight

• versatility of readout electronics

• adapted for sterile environment

Collaboration IMNC, LAL, Hôpital Lariboisière

28

IV of monolithic SiPM arrays from HPK

Keithley 2611

Hi Lo

0.8V VBD range

256 IV’s

16 over 23 arrays

selected for SIPMED

23 arrays (368 IV’s)

1.5V VBD range

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Characteristics uniformity Plots by: A. Nagai

Board SiPM 1 Board SiPM 2


Board SiPM 2 Board SiPM1


VBD SIPMED camera

Board SiPM 2


Board SiPM 3

Idark @ VBIAS =72.5V

Board SiPM 2

Board SiPM 1

Board SiPM 4

Board SiPM 3

Idark @ overvoltage =1V

Ipost-BD qGDCR

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Elementary module of SIPMED camera

USB interface

Board 1: 4 (2x2) SiPM arrays

64 readout channels

Board 2:

2 EASIROC chips

64 readout channels

2 ADC 12 bits

Board 3:

FPGA

FTDI & USB

Front side Back side

Elementary module

Field of view: 8 cm2 28.6 mm

T. Ait Imando et al., PoS 2012

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256 SiPM’s = 256 readout channels

• Optical and electrical tests under progress

SIPMED camera

Weight: 2.2 kg

TRECaM camera based on MAPMT SIPMED camera

Weight: 1.2 kg

Pictures by courtesy of L. Menard

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SIPMED energy resolution:10.5% @ 122 keV

Good linearity

TRECaM energy resolution:12.9% @ 122 keV

Preliminary characteristics of SIPMED camera

SIPMED spatial resolution:1.23 mm@ 122 keV

TRECaM spatial resolution:1.36 mm @ 122 keV

Plots by courtesy of L. Menard

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Conclusions and perspectives

Detector point of view: understanding of device fundamentals

Detailed physical models of avalanche multiplication, triggering

probability

Reducing DCR and afterpulsing contributions

Improvement in fast timing applications

Temperature dependence of different parameters for stable operation

PDE improvements in UV & IR regions

Applications point of view

Build large detection area

Uniform electrical and optical characteristics

Low dead area (3D interconnection - cost)

Development of dedicated ASIC’s involving multichannel readout

electronics

Studies of radiation hardness for application in high energy physics

experiments

.

Additional slides

34

35

Front side Back side Board SIPMED2

Front side Back side Board SIPMED3

• EASIROC chip •32 channels

•8-bit input DAC, 0-2.5V range

•Low and high voltage pre-amplifiers, adjustable gain

•charge measured at maximum amplitude of slow shapers (50 to 175 ns peaking time) by two Track and

Hold blocks

• fast trigger line, made of a fast shaper and a discriminator, provides the hold signal

•2 EASIROC chips/ elementary module

• two-channels externals ADC 12-bit,

2MSPS

• ALTERA ciclone III FPGA

• FTDI FT2232H (USB protocol 2.0 Hi-speed, 440MBit/s)

•USB mini-connector for power supply and PC

communication

•DC/DC converter for SiPM bias

Read-out electronics of SIPMED

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• Radiation damage effects on SiPM: • increase of dark count rate due to introduction of generation centers • increase of after-pulse rate due to introduction of trapping centers • may change VBD, leakage current, noise, PDE….

Radiation damage

instrumentation on silicon detectors: from properties

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