intel 22nm soc briefing
DESCRIPTION
Intel 22nm SoC BriefingTRANSCRIPT
Intel 22 nm Tri-Gate SoC Technology 2012 IEDM Paper Preview
1
Mark Bohr Chia-Hong Jan Intel Senior Fellow Intel Fellow
December 6, 2012
Key Messages
2
• Intel is presenting a paper describing it’s 22 nm Tri-Gate SoC technology at the International Electron Devices Meeting in San Francisco on December 10
• Intel develops both CPU and SoC versions of each technology generation to support a wide range of products from high performance servers to low power cell phones
• 22 nm Tri-Gate SoC transistors cover a wide range from high performance to ultra-low leakage
• Additional devices on this SoC technology include high voltage I/O transistors, precision resistors, capacitors and inductors
• Intel’s 22 nm SoC technology will be ready for high volume manufacturing in 2013
Intel Logic Technology Roadmap
3
Intel develops both CPU and SoC versions of each generation
32 nm 22 nm 14 nm 10 nm
Name: P1268 P1269 P1270 P1271 P1272 P1273 P1274 P1275
Product: CPU SoC CPU SoC CPU SoC CPU SoC
Manufacturing Development Research
Transistor Performance vs. Leakage
4
32nm45nm1x
0.1x
0.01x
0.001x
65nm 22nm
LaptopUltrabook™
Tablet
Pocket Device
Server
Desktop
A wider range of transistors is needed for a wider range of products
Low
er T
rans
istor
Lea
kage
Higher Transistor Performance
22 nm SoC Transistor Options
5
Transistor Type High Speed Logic Low Power Logic High Voltage
OptionsHigh
Performance(HP)
Standard Perf./ Power
(SP)
Low Power(LP)
Ultra Low Power(ULP)
1.8 V 3.3 V
Vdd (Volt) 0.75 / 1 0.75 / 1 0.75 / 1 0.75/1.2 1.5/1.8/3.3 3.3 / >5
Gate Pitch (nm) 90 90 90 108 min. 180 min. 450Lgate (nm) 30 34 34 40 min. 80 min. 280
N/PMOS Idsat/Ioff (mA/um)
1.08/ 0.91@ 0.75 V,100 nA/um
0.71 / 0.59@ 0.75 V,1 nA/um
0.41 / 0.37@ 0.75 V30 pA/um
0.35 / 0.33@ 0.75 V15 pA/um
0.92 / 0.8@ 1.8 V
10 pA/um
1.0 / 0.85@ 3.3 V
10 pA/um
Mix-and-match flexibility of transistor types
22 nm SoC Transistor Performance
6
0.001
0.01
0.1
1
10
100
0 0.5 1
Ioff
(nA
/um
)
IDNsat (mA/um)
30 pA
Logic (HP)
Logic (SP)
30 pA
Low Power (LP)
@ 0.75V
30 pA
NMOS
1 nA
100 nA
Low Power (ULP)
30 pA
32 nm [3]
15 pA
32 nm [3]
0.001
0.01
0.1
1
10
100
0 0.5 1
Ioff
(nA
/um
)
IDPsat (mA/um)
PMOS
30 pA
100 nA Logic (HP)
Logic (SP)
30 pALow Power
(LP)
1 nA
@ 0.75V
30 pA30 pA30 pA
Low Power (ULP)
30 pA30 pA30 pA 30 pA
32 nm [3]
32 nm [3]
15 pA
Higher Performance Higher Performance
Low
er L
eaka
ge
22 nm Tri-Gate SoC outperforms 32 nm Planar by 20-65% and covers more than four orders of magnitude in leakage current
22 nm SoC Transistor Characteristics
7
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
-1 0 1
Ids
(A/u
m)
Vgs (V)
NMOSPMOSHP
SP
Vds = .75V
LP
Vds = -.75 V
Vds = .05 VVds = -.05 V
HP: S.S. = 71 mV/decSP: S.S. = 66 mV/decLP: S.S. = 64 mV/dec
DIBL = 30 mV/V
HP: S.S. = 72 mV/decSP: S.S. = 66 mV/decLP: S.S. = 63 mV/dec
DIBL = 35 mV/V
Sub-threshold Slope and DIBL: The lower the better
22 nm Tri-Gate SoC exhibits superior short channel control with near-ideal sub-threshold slope and DIBL
22 nm Tri-Gate Analog Performance
8
0
5
10
15
65nm Planar
45nm Planar
32nm Planar
22nm Tri-gate
GM
* R
out
GM*Rout@Vgs=peak GM, Vds=1.1 V, NMOS
Improved Analog Performance
Significant gain in Gm*Rout on 22 nm Tri-Gate provides improved analog circuit performance
22 nm SoC Advanced Passive Devices
9
High Q InductorsMIM Capacitor
MetalInsulator
Metal
Precision Resistor
R C L
Normalized Resistance
+ 15%- 15%
10090 110
Advanced passive features include precision resistors, MIM capacitors and high Q inductors
Key Messages
10
• Intel is presenting a paper describing it’s 22 nm Tri-Gate SoC technology at the International Electron Devices Meeting in San Francisco on December 10
• Intel develops both CPU and SoC versions of each technology generation to support a wide range of products from high performance servers to low power cell phones
• 22 nm Tri-Gate SoC transistors cover a wide range from high performance to ultra-low leakage
• Additional devices on this SoC technology include high voltage I/O transistors, precision resistors, capacitors and inductors
• Intel’s 22 nm SoC technology will be ready for high volume manufacturing in 2013
