introduction (1)- ceramics? · introduction 2- mechanical spectroscopy high temp. mechanical...
TRANSCRIPT
4/1/2011
1
GSMGSM
Processing of Nanostructured Ceramics:
Shaping, Sintering and Properties
Mehdi Mazaheri
Nov 2009
Introduction - Ceramics?
low density, low sensitivity to corrosion, high rigidity and hardness even at high temperature
Introduction (1)- Ceramics?
Toughening Mechanism in Ceramics
Crack deflection Peng et al., J. Am.Cerm.Soc., 1988
Introduction (1)- Ceramics?
Toughening Mechanism in Ceramics
(1) Crack deflection(2) Crack bridging (3) Fibers pullout
(1) Crack blunting(2) Crack bridging
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Xia et al, Acta Materialia, 2004. Zhang et al., Nature Materials, 2003
Jiang et al, Scripta Materialia, 2007
Introduction (1)- Ceramics?Grain refining
High temperature mechanical properties
Increasing of fracture toughness
(G.B. sliding accommodated by diffusion or interface reaction mechanisms)
gat room temperature
Nano‐structured ceramics reinforced by nano‐particles or fibers
3 times higher fracture toughness (Zhang et al, Nature Materials, 2003)
Higher creep resistance (Ionascu, EPFL Thesis, 2008)
Interest on Nanostructured Ceramics
Functional Ceramics Structural Ceramics
Krell et al, J. Am. Cerm. Soc, 86 (2003) 546.
From: Nanopowders
Shaping
• Problems
Prosity
In-homogeneity
To:
Nanostructured
Sintering ؟؟Mazaheri et al., J. Am. Ceram. Soc, 2008 (1) 5
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Shaping?
Shaping?
Sintering of n-3Y.TZPMaster Sintering Curve
20 30 40 50 60 70
Tetragonal
Monoclinic
Inte
nsity
2 Theta, o
Non-Isothermal Sintering
(Dillatometric Study)
-12
-8
-4
0
in, %
(a)
0.7
0.8
0.9
1.0
20 K min-1
5 K min-1
nal d
ensi
ty
2 K min-1
gs TTLdLρ
αρ
3
00 )(/11
⎥⎥⎦
⎤
⎢⎢⎣
⎡
−+−=
700 800 900 1000 1100 1200 1300 1400-28
-24
-20
-16
20 K min-1
5 K min-1
2 K min-1
Temperature, οC
Stra
1050 1100 1150 1200 1250 1300 13
0.5
0.6Frac
tio
Temperature, oC
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+0.9
1.0
Master Sintering Curve for n‐3Y.TZP
-21 -20 -19 -18 -17 -160.4
0.5
0.6
0.7
0.8
Frac
tiona
l den
sity
Log θ
Sintering of n-3Y.TZPMechanical behaviour
HARDNESS
Sintering of n‐3Y.TZPMechanical behaviour
Fracture Toughness
Grain Growth S i
Spark Plasma Sintering
(SPS)
Pressure Assisted Sintering
Phase Transformation
Assisted
Using Additives
Effect of Sintering Techniques
Suppression(HP & HIP)
Millimeter and Micro Wave Sintering
Two-step Sintering
(TSS)
Two-step Sintering
(TSS)
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Ng Two Step Sintering
Nano Ceramics ReferencesYttria Chen et al. , NatureZinc Oxide Mazaheri et al J Am Ceram
Simple! Physically Powerful!
Zinc Oxide Mazaheri et al., J. Am. Ceram. Soc.
Alumina Bodisova et al., J. Am. Ceram. Soc.
ZnO Varistors Duran et al. J. Am. Cerm. Soc.YAG Chen et al., Ceram. Int. Tetragonal Stabilized Zirconia (3Y-TZP)
Mazaheri et al., J. Eur. Cer. Soc.
Ba TiO3 Wang et al., J. Am. Ceram. Soc.Titania Mazaheri et al., Scripta Mat.
Second Step; T2
First Step; T1
Time
Tem
pera
ture
Chen et al, Nature, 2000
Grain Growth Suppression
Effect of ShapingTechniquesExperimental:
Raw Material
Shaping
SEM-TEM
BET
XRD
UP, CIP, Slip casting
3Y‐TZP (~75 nm)
Alumina (80‐150 nm)
8YSZ (15‐33 nm)
HA(~93 / ~24 nm)
ZnO (20‐40 nm)
PMN (<100 nm)
Titania (15 nm)1) Conventional sintering (Non-isothermal and Isothermal)
Cold pressing CIP Wet shapiping method
Sintering
Mechanical properties
Microstructural Observation
1. Mechanically Polished Using Diamond Pastes
2. Thermally Etched
3. Intercept Linear Method
isothermal and Isothermal)
2) Two-step sintering
3) Phase transformation sintering
4) Hot pressing
5) Microwave sintering
Sintering of n-ZnOCS-TSS and HP
Conventional Sintering of n-ZnO
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2 Step Sintering of n-ZnO
DiscussionSummarizes Results of TSS
Hot Pressing of n-ZnO
Application?
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Sintering of n-TitaniaCS,TSS and assisted by phase-transformation
Sintering of n-TitaniaCS,TSS and assisted by phase-transformation
Compaction Behavior ؟؟
Processing of 8YSZSintering methods: CS, TSS and Microwave Sintering
Shaping methods: Uniaxial pressing, Slipcasting
Processing of 8YSZShaping methods: Uniaxial pressing, Slipcasting
0 52
0.56
0.60
Solid Load (wt%)
Dry Pressing
nsity
0.45 0.50 0.55 0.60 0.65
Slip Casting
0.95
1.00
nsity
80
100
%)
100 1000
0.32
0.36
0.40
0.44
0.48
0.52
Pc (Critical Pressure ~600 MPa)
Py (Agglomerates Strength ~370 MPa)
Frac
tiona
l Gre
en D
en
Applied Pressure (MPa)
0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50
0.75
0.80
0.85
0.90
Dry Pressing Slip Casting
Frac
tiona
l Fire
d D
en
Fractional Green Density0 50 100 150 200 250 300 350 4000
20
40
60
Dry PressingSlip Casting
Frac
tiona
l Vol
ume
(%
Pore Diameter (nm)
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Processing of 8YSZSintering methods: CS, TSS, MS
Processing of 8YSZSintering methods: CS, TSS, MS
Processing of 8YSZMicrostructure and Mechnical behaviour
CS LMS
HMS TSS
؟
Conclusion 1
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Spark Plasma Sintering
&
Thermo-Mechanical Properties
Spark plasma sintering P
Graphite dieGraphite die
SamplePulsed DC
The first SPS unit in Europe, Dr Sinter 2050, installed in 1998
P
SPS ≥ HP
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Pressure effectPressure effect
Sintering or packing?
⎟⎠⎞
⎜⎝⎛ +⎟⎟⎠
⎞⎜⎜⎝
⎛ Ω=
Δ−r
PkTG
Ddt
LLd sva
gbgb γφδ3
0
295)/(
For Coble creep based grain boundary sliding
in intermediated stage
⎠⎝
⎟⎠⎞
⎜⎝⎛ +⎟⎟⎠
⎞⎜⎜⎝
⎛ Ω=
Δ−r
PkTG
Ddt
LLd sva
gbgb γφδ 2
215)/(
30
in final stage
Dgb : GB diffusion coefficient, δgb : GB width, Ω : atomic volume, G : grain size, k : Boltzmann constant, T : the absolute temperature, γsv is the solid-vapour surface energy, r : pore size. pa : applied stress.
600
650
700
696ºC
500 nm
prior to
Strain rate: 10-5 s-1
MgO Superplasticity⎯ Grain boundary sliding
0.3 Tm vs 0.5Tm
0 5 10 15 20 25 30 35 400
50
100
150
200
250
300
350
400
450
500
550
796ºC
756ºC
Stre
ss (M
Pa)
Strain (%) 500 nm
after
Compressive deformation under constant cross-head speed
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0,006
0,008
0,010
P always on
100MPa 75MPa 50MPa25MPao)
/dt (
s-1)
Strain rate: >10-3 s-1
Grain sliding Diffusion
Densification rate
40 50 60 70 80 90 1000,000
0,002
0,004
25MPa
Relative Density
-d(Δ
L/L
o
0,010
⎟⎠⎞
⎜⎝⎛ +⎟⎟⎠
⎞⎜⎜⎝
⎛ Ω=
Δ−r
PkTG
Ddt
LLd sva
gbgb γφδ3
0
295)/(
in intermediated stage
⎟⎠⎞
⎜⎝⎛ +⎟⎟⎠
⎞⎜⎜⎝
⎛ Ω=
Δ−r
PkTG
Ddt
LLd sva
gbgb γφδ 2
215)/(
30
in final stage
Intermedialte stage, 32%≤ Vp ≤ 10%, no linear relationFinal stage, Vp ≤ 10%, no linear relation
40 50 60 70 80 90 1000,000
0,002
0,004
0,006
0,008
P always on
100MPa 75MPa 50MPa 25MPa
Relative Density
-d(Δ
L/L
o)/d
t (s-1
)
0.015
0.020P at Tf
100P 75P 50P 25P
dt (s
-1)
Densification rate:P at Tf
Strain rate: 10-2 s-1
40 50 60 70 80 90 100
0.000
0.005
0.010
Relative Density
-d(Δ
L/L
o)/d
90
95
100
Den
sity
[%]
92
96
100
900
1100
1300
1500
Den
sity
[%]
Grain Siz
Consolidating YAG under high pressure
80
85
1100 1200 1300 1400 1500 1600
100 MPa - 3 min100 MPa - 6 min 50 MPa - 3 min
Rel
ativ
e D
SPS Temperature [oC]
80
84
88
100
300
500
700
1200 1300 1400 1500 1600
Rel
ativ
e D ze [nm
]
SPS Temperature [oC]
34 nm nc-YAG@ 100 MPa / 3 min
Spherical powder, 34 nmJ. of Euro Ceram. Soc. (2007) , 27(11), 3331-3337
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Densification while retarding solution-reprecipitation
Bright-field TEM image, beta-powder, grain size: 76 nm, SPS 1500oC under 50 MPa for 3 min. Note the aggregate feature of the large grains.
Introduction (2)- Ceramics?Grain refining
High temperature mechanical properties
Increasing of fracture toughness
(G.B. sliding accommodated by diffusion or interface reaction mechanisms)
gat room temperature
Nano‐structured ceramics reinforced by nano‐particles or fibers
3 times higher fracture toughness (Zhang et al, Nature Materials, 2003)
Higher creep resistance (Ionascu, EPFL Thesis, 2008)
Motion of structural defects…Introduction 2- Anelasticity
Standard anelastic solid model
Introduction 2- Mechanical spectroscopy
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Introduction 2- Mechanical spectroscopy High temp. mechanical behavior
Crystallization in glassy phase
Crystallization in glassy phase
Onset of creepMechanical spectroscopy
* Forced torsion pendulum in sub‐resonant mode * Temperature: RT‐ 1600 K* Frequency: 10‐4 and 10 Hz* Vacuum: 10‐3 Pa
Introduction (3) –Application of M.S. in ceramics
High‐temperature plasticity of finefine‐‐grainedgrained ceramicsceramicsproceedsproceeds byby mutually accommodating graingrain boundaryboundary slidingslidingand diffusiondiffusion creepcreep..
Diffusion processes are:‐‐ NabarroNabarro‐‐Herring creep Herring creep ‐‐ Coble creepCoble creep
Grain boundary sliding createsvoids or overlaps that have to beaccommodated by diffusion.
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First results (2) – 3Y.TZP33YY‐‐TZPTZP
Donzel et al, Acta Mater. 2000
Theoretical model for GB slidingTheoretical model for GB sliding
Lakki’s model for GB slidingLakki’s model for GB sliding
tan φ( )ω=ωp=
GKG
ωp =δη
KGd
+ K 2
p
2d KGd
+ K 2
Lakki’s model for GB slidingLakki’s model for GB sliding
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What is the aim of this work?
Yttria Stabilized Zirconia (3Y.TZP)
Silicon nitride based ceramics (SiAlON)
Spark plasma sintering (SPS)
Two‐step sinteirng
SPS apparatus in Lyon
Materials
Hot Press & Spark Plasma Sintering
2073 K, 35 MPa and 4 h
Ca‐SiAlON(Si3N4, AlN, CaO)
Y‐SiAlON Yb‐SiAlON
CO04 CO14
CaxSi12‐3xAl3xOxN16‐xx=0.4, 1.4
YO04 YN04
(Si3N4, AlN, Y2O3/YN)
YbO04 YbN04
(Si3N4, AlN, Yb2O3/YbN
Ca‐SiAlON(Si3N4, AlN, CaH2)
CN04 CN08 CN16
Materials
Hot Press & Spark Plasma Sintering
1773 K, 50 MPa and only 3 min
Si3N4 + 6wt% Al2O3 + 6wt% Y2O3
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Si3N4 based ceramics20x10-3
15
1.00
0.98
0.96
0.94
Relative m
o
YO04 Heating
Cooling
Y40
softening
crystallization
10
5
0
tan
(φ)
150014001300120011001000
Temperature (K)
0.92
0.90
0.88
0.86
odulas (arb. units)
Lakki et al, Acta. Mater., 1995.
Si3N4 based ceramics
10x10-3
8
6
4
2
tan(φ)
1025 K 1050 K1075 K
1.00
0.99
0.98
0.97
0.96
Rel
ativ
e m
odul
us
1025 K 1050 K 1075 K
0
0.01 0.1 1
Frequency, Hz
1075 K 1100 K 1125 K
0.95
0.01 0.1 1
Frequency, Hz
1100 K 1125 K
0.88 0.89 0.90 0.91 0.92 0.93 0.94 0.95 0.96
0.01
0.1
1
Freq
uenc
y, H
z
T -1, K-1
Si3N4 based ceramics(CO04 and CO14)
Same microstructureSame chemical composition of glassy phase
Higher glassy phaseHigher amount
of glassy phase
(Y4O and Y4N)
Y4O
Effect of N/O ratio on glassy phase
Hig
her a
mou
nt
of g
lass
y ph
ase
1. Equiaxed grains (as same!)2. Grain size (as same!)
Y4N
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YbO04 (Si3N4 + AlN + Yb2O3)YbN04 (Si3N4 + AlN + YbN)
Results (Yb4O and Yb4N)
Si3N4 based ceramics
CN04
CN08
35x10-3
30
25
20
15
tan
(φ)
Ca2N Ca4N Ca8N Ca16N
10
5
0
1300125012001150110010501000
Temperature, K
Si3N4 based ceramics
0.3
0.4
Ca16N Ca8N Ca4N
1500 1550 1600 1650 1700 1750
0.0
0.1
0.2 -ΔL/
L 0
Temperature,oC
Si3N4 based ceramics
• Real Si3N4 system
To be published in Acta Materialia
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70x10-3
60
50
40
(φ)
Pure glass
Si3N4 based ceramics
composition
30
20
10
0
tan
150014001300120011001000
Temperature (K)
Higher restoring force
Tg
Results
Mechanical loss spectrum of Si3N4 Processed via SPS
3Y.TZP
0.35
0.30
0.25 F= 1 HzHeating rate = 1 K/min As received SU
Pure zirconia + conventional sinteirng Pure zirconia + sparka plasma sinteirng
0.20
0.15
0.10
0.05
Tan
(φ)
1600140012001000800600400200
Temperature (K)
First results (2) – 3Y.TZP
0.35
0.30
0.25
F= 1 HzHeating rate = 1 K/min As received SU (1) Pure zirconia
(2) 3Y-TZP + 3 wt% CNTs0.20
0.15
0.10
0.05
tan
(φ)
14001300120011001000900800 Temperature (K)
( ) (3) 3Y-TZP + 3 wt% CNTs (2ed test) + 30h anneal
(1) (2)
(3)
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3Y.TZP
A ‐material constantσ – constant applied stressG – shear modulusb – Burger vectord – grain size ΔHact – activation enthalpy (characteristic
for underlying mechanism)R – universal gas constant
Power law equation of creepPower law equation of creep
6
100
2
3
456
n(Φ) x
100
0
Power law equation of creepPower law equation of creep
T=1600 KT=1575 KT=1550 KT=1525 KT=1500 K
2
3
456
tan
4.03.02.01.00.0-1.0-2.0-3.0Ln(Frequency)
Grain growth?Grain growth?
( )( ) ( ) 1tan( ) tan log tan log log( )(10)act
oH
R ln Tωτ ω τ
⎛ ⎞⎡ ⎤Δ⎡ ⎤Φ = Φ = Φ + +⎜ ⎟⎢ ⎥⎣ ⎦ ⋅⎣ ⎦⎝ ⎠
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Grain growth?Grain growth?
Movement in Y direction
-0.00008 -0.00006 -0.00004 -0.00002 0.00000
0
1
2
3
4
5
6
7
ΔΗact= 617 kJ.mol-1
Δ lo
g (f)
Δ T-1
3YTZP + 3 wt% CNTs As received SU
0.195
0.200
0.205
0.195
0.200
0.205
size
0 1x104 2x104 3x104 4x104 5x104
0.175
0.180
0.185
0.190
Tan
(φ)
Holding time (s)
3YTZP + 1.5 wt% CNTs Heating rate = 1 K/min As received SUSoaking temperature = 1600 k
0 1x104 2x104 3x104 4x104 5x104
0.175
0.180
0.185
0.190
Gra
in s
Tan
( φ)
Holding time (s)
3YTZP + 1.5 wt% CNTs Heating rate = 1 K/min As received SUSoaking temperature = 1600 k
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d d0
-1.580.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4
Log (anealing time (h))
Slope = p/n = -0.319
-1.74
-1.72
-1.7
-1.68
-1.66
-1.64
-1.62
-1.6
Log
(tan
(�))
3Y-TZP + 1.5% CNTsAs received
Aneal temperature = 1600 K
Creep model:Interface‐reaction, p=1, n=3
This model to be submitted by end of year
What is the plan for future?Is the model correct?
TEM observation
Creep test
Si3N4 3Y.TZP
1- More investigation on SPS results
2- Different additivesand microstructures
Processing new nano-CMCs by1- grow up CNTs directly (in collaboration with Dr. Magrez)
2- application of TSS and SPS (in collaboration with Prof. Shen and Prof. Fantozzi)
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Acknowledgment
Prof. R. SchallerDr. Daniele MariProf. Z. Shen Prof. G. FantozziDr. C. Yanbing
Les Brenets Border of Switzerland-France
Thanks for you attention
Les Brenets Border of Switzerland-France