ioana pintilie, vilnius 2-6 june 20071 defect investigation on mcz after 1 mev neutron irradiation...
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Ioana Pintilie, Vilnius 2-6 june 2007 1
Defect investigation on MCz after 1 MeV neutron irradiation
I. Pintilie1, E. Fretwurst2, A. Junkes2 and G. Lindstroem2
1 National Institute of Materials Physics, Bucharest, P.O. Box MG-7, 077125, Romania
2Institute for Experimental Physics, Hamburg University, D-22761, Germany
Ioana Pintilie, Vilnius 2-6 june 2007 2
Materials
MCz-Silicon wafers: <100>, n/P, 100 μm, 1090 cm, Nd = 3.96x1012 cm-3, CiS process (samples 8556-02-25, 8556-05-35 and 8556-05-19)
EPI-Silicon wafers: <111>, n/P, 72 μm on 300 μm Cz-substrate, 169 cm, Nd = 2.55x1013 cm-3, CiS process
-standard Oxidation (EPI-ST) (samples 8364-02-35 and 8364-01-33)
- diffusion oxygenated for 24 h/1100°C (EPI-DO) (samples 8364-05-36 and 8364-06-27)
Irradiation: - 1MeV neutrons at Ljubljana; fluences of 3x1011cm-2 and 5x1013 cm-2
- 26 MeV protons (for comparison with 1 MeV neutrons)
Annealing : Isothermal treatments at 80 0C
Investigation methods: - I-V, C-V, TSC, C- DLTS
Ioana Pintilie, Vilnius 2-6 june 2007 3
Defects in unirradiated samples
TDD-s already present in the as-grown material
H = 0.115 eV Ea = 0.15 eV
an = 2.26x10-15 cm2
n = 2.7x10-12 cm2
NT = 5.14x1010 cm-3
E(112K) – unkown defect present in the as-grown material:
H = 0.224 eVa
n = 3x10-15 cm2
NT = 2.89x1010 cm-3
25 50 75 100 125 150 175 200 225 250-0.01
0.00
0.01
0.02
0.03
0.04
0.05
DLT
S s
igna
l b1
[pF
]
E(112K)
TDD+/++
T[K]
MCz - unirradiated, electron traps
Ioana Pintilie, Vilnius 2-6 june 2007 4
TSC results
0 25 50 75 100 125 150 175 2000
2
4
6
8
10
12
14
16
18
20
H(116K)
BD+/++ CiOi
H(40K)
E(28K)
V2+?
BD0/++
VO
TS
C s
ignal (
pA
)
Temperature (K)
5x1013 n/cm2, as irradiated EPI- ST
EPI-DO (BD0/++) EPI-DO (BD+/++) MCz - normalized to Epi thickness
20 40 60 80 100 120 140 160 180 2000
2
4
6
8
10
12
14
[BD] = 8x1011 cm-3
EPI-DO, 5x1013 cm-2 (1MeV neutrons)
(0/++)(+/++)
BD
TS
C s
igna
l (pA
)
Temperature (K)
as irradiated 3 h at 295K
Bistability of BD
Ioana Pintilie, Vilnius 2-6 june 2007 5
Ci, BD and IO2 defects
42 44 46 48 50 52 54 56 58 600
1
2
3
4
IO2
Ci
BD+/++
TS
C s
igna
l (pA
)
Temperature (K)
5x1013 n/cm2
EPI-ST as irradiated
EPI-DO 3H at RT (BD0/++)
EPI-DO as irradiated (BD+/++) MCz as irradiated
46 48 50 52 54 56 581
2
3
4
5
6
7
8
9
10
IO2
TS
C s
igna
l (pA
)
Temperature (K)
MCz - 5x1013 n/cm2
F-500V F-300V F-100V F 50V
44 46 48 50 52 54 56 580.0
0.5
1.0
1.5
2.0
2.5
3.0EPI-ST
Ci
-/0
TS
C s
ignal (
pA
)
Temperature (K)
100 V 70 V 50 V 20 V
44 46 48 50 52 54 56 580.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0EPI-DO
BD+/++
TS
C s
igna
l (pA
)
Temperature (K)
150 V 100 V 70 V 50 V 20 V 10 V
Ioana Pintilie, Vilnius 2-6 june 2007 6
BD = TDD2
84 87 90 93 96 99 102 105
0.0
0.5
1.0
1.5
2.0
2.5
3.0EPI-DO, 3 h at room temperature
BD0/++
TS
C s
ign
al (
pA
)
Temperature (K)
F-300V F-250V F-200V F-150V F-100V F-70V F-50V F-20V F-10 V
BD(+/++): H = 0.145 eV
an = 6.8x10-12 cm2
NT as irradiated = 4.8x1011 cm-3
BD(+/++): H = 0.23 eV
an = 1.2x10-15 cm2
NT 3h at RT = 3.8x1011 cm-3
20 30 40 50 60 70 80
0
2
4
6
8
10EPI-DO, as irradiated
BD+/++
TS
C s
igna
l (pA
)
Temperature (K)
F - 100V F - 70 V F - 50 V F - 20 V F - 10 V
VO
H(42K)
E(25K)
E(45K)
Ioana Pintilie, Vilnius 2-6 june 2007 7
Annealing studies at 80 0C
0 25 50 75 100 125 150 175 200 225
0
10
20
30
40
50
60
70MCz - =5x1013 cm-2
BD+/++
IO2
VO
V2+?
CiOi
H(116K)
BD0/++
E(30K)
E(28K)
H(42K)
TS
C s
igna
l (pA
)
Temperature (K)
Annealing time at 80 0C 0 min. 20 min. 80 min. 160 min. 320 min. 640 min. 1370 min. 2810 min. 5700 min. 11460 min. 16980 min.
0 25 50 75 100 125 150 175 200
0
5
10
15
20
BD+/++
45K
EPI-DO
H(42K)
H(116K)BD0/++
V2+?
CiOi
VO
E(30K)
E(25K)
TS
C s
igna
l (pA
)Temperature (K)
F-150V F - 150V - 20min@80C F - 150V - 80min@80C F - 150V - 160min@80C F - 150V - 320min@80C F - 150 V - 640min@80C F - 150V - 1370min@80C F - 150V - 2810min@80C F - 150V - 5700min@80C F - 11460min@80C F - 16980min@80C
Ioana Pintilie, Vilnius 2-6 june 2007 8
E45K level ~ TDD+/++
38 40 42 44 46 48 50
0.5
1.0
1.5
E45K ~ TDD+/++
TS
C s
igna
l (pA
)
Temperature (K)
F - 250 V - 1370 min@80 C F - 150V - 1370min@80C F - 70V - 1370min@80C
Ea = 0.135 eV
n = 6x10-12 cm2
Ioana Pintilie, Vilnius 2-6 june 2007 9
Defects Concentration
1 10 100 1000 10000 1000001010
1011
1012
1013
Annealing time at 800C (min)
Def
ect c
once
ntra
tion
(cm
-3)
E25K E30K H42K BD+/++ E(45K) VO BD0/++ H(116K) CiOi VV+? IO2
MCz
1 10 100 1000 10000 1000001010
1011
1012
1013
Annealing time at 800C (min)
Def
ect c
once
ntra
tion
(cm
-3)
E25K E30K H42K BD+/++ E(45K) VO BD0/++ H(116K) CiOi VV+?
EPI-DO
E25K E30K H42K BD+/++ E45K VO BD0/++ H116K CiOi VV+? IO2
Ea 0.06 0.06 0.09 0.145 0.135 0.17 0.23 0.28 0.36 0.41-0.47
0.11
10-14 7x10-16 7x10-15 6x10-12 6x10-12 14x10-15 1x10-15 2x10-15 17x10-16 1x10-15 7x10-16
Ioana Pintilie, Vilnius 2-6 june 2007 10
1 10 100 1000 100000.0
2.0x1012
4.0x1012
6.0x1012
8.0x1012
1.0x1013
VV+? CiOi VO
Def
ect c
once
ntra
tion
(cm
-3)
Annealing time at 800C (min)
EPI-DO
1 10 100 1000 10000
0.0
2.0x1011
4.0x1011
6.0x1011
8.0x1011
1.0x1012
De
fect
co
nce
ntr
atio
n (
cm-3)
EPI-DO E25K H(116K) BD0/++ E(45K) BD+/++ H42K
Annealing time at 800C (min)
- 30% increase of [VO] during annealing V released from clusters may cause formation of complexes with deep acceptor levels (V2O, V2O2)- 20% increase of the donors concentration during the first 20 min
0.1 1 10 100 1000 100002x1011
3x1011
4x1011
5x1011
6x1011
7x1011
8x1011
9x1011
[BD
+E
45K
] (c
m-3)
Annealing time at 80C (minutes)
EPI-DO EPI-ST MCz
Ioana Pintilie, Vilnius 2-6 june 2007 11
DLTS results on MCz
80 160 240
0.0
0.1
0.2
0.3
0.4
0.5
V2
-/0+?
V2
=
TDD+/++
VO
8556-02-25: MCz, 3E11 n/ cm2, annealing at 80°C and 200°C (Tw=200ms).
b 1 coe
ffici
ent [
pF]
T [K]
as irr 4 min at 80°C 30 min at 80°C 1440 min at 80°C 30 min at 200°C
90 180
-0.3
0.0
CiOi+/0
8556-02-25: MCz, 3E11 n/ cm2, annealing at 80°C and 200°C (Tw=200ms)
b 1 co
rrel
ator
[pF
]T [K]
as irr 4 min at 80°C 30 min at 80°C 1440 min at 80°C 30 min at 200°C
Electron trapsmeasured during cooling
Hole trapsmeasured during heatingPulsing with forward bias
Ioana Pintilie, Vilnius 2-6 june 2007 12
DLTS-annealing results
1 10 100 10000.00E+000
5.00E+010
1.00E+011
1.50E+011
2.00E+011
2.50E+011
3.00E+011Annealing results at 80 (full) and 200 oC (open symbol)
Con
cent
ratio
n [c
m-3]
Annealing time [min]
VO V2=/- V2-/0 VO 30 min at 200C V2=/- 30 min at 200C V2-/0 30 min at 200C
Ioana Pintilie, Vilnius 2-6 june 2007 13
Comparison between TSC results after 1MeV neutron and 26 MeV proton irradiation
- E30K, H42K, IO2, VO – enhanced generation after 26 MeV protons
- H42K and IO2 defects – strongly generated in MCz
0 25 50 75 100 125 150 175 2000
10
20
30
40
50
60
70
80
90
100
V2+?
BD+? H(116K)
CiOi
VO
IO2
E(30K)
H(42K)
MCz - 80min@80C
TS
C s
igna
l (pA
)
Temperature (K)
1 MeV neutron irradiation 26 MeV protons
0 25 50 75 100 125 150 175 2000
10
20
30
40
50
60
70
80
H(42K)
VO
V2+?
CiOi
H(116K)
BD
E(30K)
EPI-DO, 80min80C
TS
C s
igna
l (pA
)
Temperature (K)
1 MeV neutrons 26 MeV protons
Ioana Pintilie, Vilnius 2-6 june 2007 14
Summary
MCz, EPI-ST and EPI-DO were studied comparatively after irradiation with 1 MeV neutrons and 26 MeV protons
Main radiation induced defects:• IO2 – only in MCz• H(42K) – strongly formed in MCz, impurity related
• Ci - only in EPI-ST
• BD&TDD - the lowest generation in MCz?! - increase in the concentration during the first 20min at 80 C
• VO - the highest introduction rate in EPI-diodes (double compared with MCz)- 30% increase of [VO] during annealing V released from clusters
may cause formation of complexes having deep acceptor levels (V2O, V2O2)
• H(116K), CiOi and V2 & clusters – same generation rate in all materials