irfz44n

IRFZ44NHEXFET Power MOSFET

01/03/01

Parameter Typ. Max. UnitsRJC Junction-to-Case 1.5RCS Case-to-Sink, Flat, Greased Surface 0.50 C/WRJA Junction-to-Ambient 62

Thermal Resistance

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VDSS = 55V

RDS(on) = 17.5m

ID = 49AS

D

G

TO-220AB

Advanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.

l Advanced Process Technologyl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated

Description

PD - 94053

Absolute Maximum RatingsParameter Max. Units

ID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 100C Continuous Drain Current, VGS @ 10V 35 AIDM Pulsed Drain Current 160PD @TC = 25C Power Dissipation 94 W

Linear Derating Factor 0.63 W/CVGS Gate-to-Source Voltage 20 VIAR Avalanche Current 25 AEAR Repetitive Avalanche Energy 9.4 mJdv/dt Peak Diode Recovery dv/dt 5.0 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )C

Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

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S

D

G

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode) showing theISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 25A, VGS = 0V trr Reverse Recovery Time 63 95 ns TJ = 25C, IF = 25AQrr Reverse Recovery Charge 170 260 nC di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

49

160A

Starting TJ = 25C, L = 0.48mH RG = 25, IAS = 25A. (See Figure 12)

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

Notes: ISD 25A, di/dt 230A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C .

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250AV(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, ID = 1mARDS(on) Static Drain-to-Source On-Resistance 17.5 m VGS = 10V, ID = 25A VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250Agfs Forward Transconductance 19 S VDS = 25V, ID = 25A

25 A VDS = 55V, VGS = 0V 250 VDS = 44V, VGS = 0V, TJ = 150C

Gate-to-Source Forward Leakage 100 VGS = 20VGate-to-Source Reverse Leakage -100 nA VGS = -20V

Qg Total Gate Charge 63 ID = 25AQgs Gate-to-Source Charge 14 nC VDS = 44VQgd Gate-to-Drain ("Miller") Charge 23 VGS = 10V, See Fig. 6 and 13td(on) Turn-On Delay Time 12 VDD = 28Vtr Rise Time 60 ID = 25Atd(off) Turn-Off Delay Time 44 RG = 12tf Fall Time 45 VGS = 10V, See Fig. 10

Between lead, 6mm (0.25in.)

from packageand center of die contact

Ciss Input Capacitance 1470 VGS = 0VCoss Output Capacitance 360 VDS = 25VCrss Reverse Transfer Capacitance 88 pF = 1.0MHz, See Fig. 5EAS Single Pulse Avalanche Energy 530 150 mJ IAS = 25A, L = 0.47mH

nH

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance S

D

G

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current

IRFZ44N

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Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

20s PULSE WIDTHT = 25 CJ

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)

I ,

Dra

in-to

-Sou

rce

Curre

nt (A

)

DS

D

4.5V

1

10

100

1000

0.1 1 10 100

20s PULSE WIDTHT = 175 CJ

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V


I ,

Dra

in-to

-Sou

rce

Curre

nt (A

)

DS

D

4.5V

1

10

100

1000

4 5 6 7 8 9 10 11

V = 25V20s PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I ,

Dra

in-to

-Sou

rce

Curre

nt (A

)

GS

D

T = 25 CJ

T = 175 CJ

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R

, D

rain

-to-S

ourc

e O

n Re

sista

nce

(Norm

alize

d)

J

DS(

on)

V =

I =

GS

D

10V

49A

IRFZ44N

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

1 10 1000

500

1000

1500

2000

2500


C, C

apac

itanc

e (pF

)

DS

VCCC

=

=

=

=

0V,CCC

f = 1MHz+ C

+ C

C SHORTEDGSiss gs gd , dsrss gdoss ds gd

Ciss

Coss

Crss

0 10 20 30 40 50 60 700

4

8

12

16

20

Q , Total Gate Charge (nC)

V

, G

ate-

to-S

ourc

e Vo

ltage

(V)

G

GS

I =D 25A

V = 11VDSV = 27VDSV = 44VDS

0.1

1

10

100

1000

0.0 0.6 1.2 1.8 2.4V ,Source-to-Drain Voltage (V)

I

, Rev

erse

Dra

in C

urre

nt (A

)

SD

SD

V = 0 V GS

T = 25 CJ

T = 175 CJ

1 10 100VDS , Drain-toSource Voltage (V)

0.1

1

10

100

1000

I D, Dr

ain-

to-S

ourc

e Cu

rrent

(A)

Tc = 25CTj = 175CSingle Pulse

1msec

10msec

OPERATION IN THIS AREA LIMITED BY R DS(on)

100sec

IRFZ44N

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

25 50 75 100 125 150 1750

10

20

30

40

50

T , Case Temperature ( C)

I ,

Dra

in C

urre

nt (A

)

C

D

VDS90%

10%VGS

td(on) tr td(off) tf

VDS

Pulse Width 1 sDuty Factor 0.1 %

RD

VGSRG

D.U.T.

VGS

+-VDD

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:1. Duty factor D = t / t2. Peak T =P x Z + T

1 2J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Ther

mal

Res

pons

e(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

IRFZ44N

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QG

QGS QGD

VG

Charge

D.U.T. VDS

IDIG

3mA

VGS

.3F

50K

.2F12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

VGS

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V (BR )D SS

IAS

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

R GIA S

0 .01tp

D .U .T

LVD S

+-

VD D

D R IV E R

A

1 5V

20V

25 50 75 100 125 150 1750

60

120

180

240

300

Starting T , Junction Temperature ( C)

E

, Si

ngle

Pul

se A

vala

nche

Ene

rgy

(mJ)

J

AS

IDTOP

BOTTOM

10A 18A 25A

IRFZ44N

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Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

RGVDD

dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For N-channel HEXFET power MOSFETs

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L E A D A S S IG NM E NT S 1 - G A T E 2 - D R A IN 3 - S O U RC E 4 - D R A IN

- B -

1 .32 (.05 2)1 .22 (.04 8)

3 X 0.55 (.02 2)0.46 (.01 8)2 .92 (.11 5)2 .64 (.10 4)

4.69 ( .18 5 )4.20 ( .16 5 )

3X 0.93 (.03 7)0.69 (.02 7)

4.06 (.16 0)3.55 (.14 0)

1.15 (.04 5) M IN

6.47 (.25 5)6.10 (.24 0)

3 .7 8 (.149 )3 .5 4 (.139 )

- A -

10 .54 (.4 15)10 .29 (.4 05)2.87 (.11 3)

2.62 (.10 3)

1 5.24 (.60 0)1 4.84 (.58 4)

1 4.09 (.55 5)1 3.47 (.53 0)

3 X 1 .4 0 (.0 55 )1 .1 5 (.0 45 )

2.54 (.10 0)2 X

0 .3 6 (.01 4) M B A M

4

1 2 3

N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking InformationTO-220AB

Package OutlineTO-220ABDimensions are shown in millimeters (inches)

PA R T N U M B ERIN TE R N A TIO N A L R E C TIF IER L O G O

E XA MP L E : TH IS IS AN IR F1 0 1 0 W IT H AS SE M B L Y L O T C O D E 9 B1 M

A S SE M BL Y L O T C O D E

D ATE C O D E (YYW W )YY = YE ARW W = W E EK

9 2 4 6IR F 10 1 0

9B 1 M

A

Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.01/01

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

irfz44n

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