I

Contents

Acknowledgements & Conference Organization .................................................................... 1 Welcome ................................................................................................................................... 2 UCLA Campus Map .................................................................................................................3 CNSI Direction .........................................................................................................................5 Schedule Table ..........................................................................................................................6 Symposia ............................................................................................................................... 13

September 8 Plenary Presentations I: Materials Enabling Nanotechnology .............................................. 13 Invited Presentations I-A: Nano-devices for Optical/Energy Applications............................ 17 Invited Presentations I-B: Nano-structured Materials ............................................................ 24

September 9 Plenary Presentations II: Transition from Micro to Nanotechnology..................................... 32 Invited Presentations II-A: Nano-Devices Fabrication........................................................... 37 Invited Presentations II-B: Electronic Interconnects .............................................................. 43

September 10 Plenary Presentations III: Materials Enabling Energy Applications....................................... 49 Invited Presentations III-A: Organic Photovoltaics ................................................................ 54 Invited Presentations III-B: Nano-materials in Electronics .................................................... 61

September 8-10 Posters ..................................................................................................................................... 68

1

Acknowledgements

Sponsored by

Conference Organization

General Chairs: Prof. King-Ning Tu, UCLA; Prof. Kwang-Lung Lin, NCKU Executive Committee: Prof. Jenn-Ming Yang, UCLA; Prof. In-Gann Chen, NCKU

Program Committee: Prof. Yang Yang, UCLA; Prof. Jen-Sue Chen, NCKU

UCLA Student Committee: Po-Ching Yeh, Yuan-Wei Chang, Kevin Alex Lee, Bao Lei, Samuel Duan,

Jonathan Quan, Hsiao-Yun Chen, Hsin-Ping Chen

University of California, Los Angeles, USA

National Cheng Kung University, Taiwan,

ROC

National Science Council, Executive Yuan, Taiwan,

ROC

Chinese-American

Engineers and Scientist Association of Southern

California

California Nano-Systems Institute

at UCLA

Electronics & Optoelectronics Research Laboratories at Industrial

Technology Research Institute, Taiwan, ROC

2

Welcome

Dear Plenary and Invited Speakers, Distinguished Guests, and All Participants:

On behalf of the organizing committee, we are very pleased to welcome you to the California Nano Systems Institute (CNSI) at University of California, Los Angeles for the 2nd International Symposium on Materials for Enabling Nanodevices (2010 2nd ISMEN).

With the combination of the bottom-up self-assembly process and the traditional top-down lithographic fabrication technologies, various innovative and extraordinary nano-devices and systems are emerging, as in medical and energy electronics. Among many of the technologies related to nano-science and technology, nano-wires, nano-dots, and their nano-interconnects and contacts play the key roles in manufacturing and integrating the nano-devices with outstanding performance into a practical system. Integration schemes that are cost effective and that have high production yields and reliability need to be developed for these nano-structured systems to be successfully implemented.

2nd ISMEN symposium aims to provide a forum for researchers around the world to exchange ideas on the latest advances in materials, processes, integration, and reliability in areas of advanced nano-materials and nano-devicess. Our activities in three days comprise 14 plenary talks, 41 invited talks, and 41 poster presentations. We thank many distinguished speakers, from China, Taiwan, Ukraine, and USA for their contributions. We hope 2010 2nd ISMEN serves as a bridge to enhance interactions and to initiate new collaborative teams on subjects of common interest.

We would like to acknowledge the financial supports from National Science Council of Taiwan, Ministry of Economic Affairs of Taiwan (through Taipei Economic and Cultural Office in San Francisco), and Electronic and Opto-electronic Laboratory of Industry Technology Research Institute of Taiwan. The organizing team for 2010 2nd ISMEN would like to thank all of you for your active participation. Your high quality presentation and interaction with each other will make this Symposium an extraordinary event. We hope that you will enjoy the event, your visit of CNSI/UCLA, and your stay in Los Angeles.

Sincerely yours,

King-Ning Tu (UCLA, USA) and Kwang-Lung Lin (NCKU, Taiwan) Conference Chairs, 2010 2nd ISMEN

3

UCLA Map

4

5

CNSI Direction

6

Schedule table

(Plenary talk: 40 min; Invited talk: 20 min)

September 8 (Wed.) September 9 (Thur.) September 10 (Fri.) 9:00~9:20 Opening 9:20~10:40 Plenary (I)

8:40~10:40 Plenary (II)

8:40~10:40 Plenary (III)

10:40~11:00 Coffee Break

Morning

11:00~12:20 Plenary (I)

11:00~12:20 Plenary (II)

11:00~12:20 Plenary (III)

Lunch 12:20~14:00 14:00~15:20 Invited (I-A, I-B)

14:00~15:20 Invited (II-A, II-B)

14:00~15:20 Invited (III-A, III-B)

15:20~15:50 Coffee Break 15:50~16:50 (I-A) 15:50~17:10 (I-B) Invited (I-A, I-B)

15:50~16:30 Invited (II-A, II-B)

15:50~16:50 Invited (III-A, III-B)

Afternoon

-- 16:30~18:00 Poster

--

7

September 8 (Wed.)

Time Speaker Organization Title of presentation Prof.

James S. Economou Vice Chancellor for Research, UCLA 09:00 09:20 Prof.

Jane P. Chang

Associate Dean of School of Engineering and Applied

Science, UCLA

Opening Remarks

Plenary Presentations I: Materials Enabling Nanotechnology Chairs: King-Ning Tu (UCLA) and Kwang-Lung Lin (NCKU)

09:20 10:00

Dr. Stanley Williams Hewlett-Packard Laboratories The memristor at age 40

10:00 10:40

Prof. Maw-Kuen Wu

Institute of Physics Academia Sinica Material Research and Nanotechnology

10:40 11:00 Coffee Break

11:00 11:40

Prof. Jim Heath

Chemistry Caltech

Pushing the Limits of Fundamental Materials Properties via Nanoscale Design

11:40 12:20

Prof. Zhong-Lin Wang

Materials Science and Eng. Georgia Institute of Technology

Toward Self-Powered Nanosystems: Nanogenerators and Piezotronics

12:20 14:00 Lunch

Invited Presentations I-A: Nano-devices for Optical/Energy Applications Chairs: Mark Goorsky (UCLA), Dong-Sing Wuu (NCHU) and Miin-Jang Chen (NTU)

14:00 14:20

Prof. Mark Goorsky

Materials Science and Eng. UCLA

Engineered Nanoscale Defects: Enabling Materials Integration

14:20 14:40

Prof. Fuh-Sheng Shieu

Materials Science and Eng. National Chung Hsing Univ.

Synthesis of Au/Pt nanoparticles and its application in PEM fuel cell

14:40 15:00

Prof. Diana Huffaker

California Nanosystems Institute UCLA

Patterned III-V Nanopillar Arrays for Integrated Nanodevices

15:00 15:20

Prof. Chuan-Pu Liu

Materials Science and Eng. National Cheng Kung Univ.

Surface Plasmon Resonance Enhanced Light Extraction for Light Emitting Diodes

15:20 15:50 Coffee Break

15:50 16:10

Prof. Dong-Sing Wuu

Materials Science and Eng. National Chung Hsing Univ

Chemical lift-off technology for high-efficiency LEDs and solar cells

16:10 16:30

Prof. Shiao-Wei Kuo

Materials and Optoelectronic Science National Sun Yat-Sen Univ

Hydrogen Bond Interaction Mediated Self-Assembly Nanostructure Materials

16:30 16:50

Prof. Andriy M. Gusak

Cherkasy National University (Ukraine) Modeling of Nucleation in Open Nanosystems

Invited Presentations I-B: Nano-structured Materials Chairs: Yu Huang (UCLA) and Jacob C. Huang (NSYSU)

14:00 14:20

Prof. Richard Kaner

Chemistry & Biochemistry UCLA

Synthesis, Characterization and Electronic Applications of Chemically Converted Graphene

14:20 14:40

Prof. Ingann Chen

Materials Science and Eng. National Cheng Kung Univ.

Thermally Assisted Photoreduction of Vertical Metallic Nanowires

14:40 15:00

Prof. Yu Huang

Materials Science and Eng. UCLA

Nanoelectronic devices from nanowire heterostructures

8

15:00 15:20

Prof. Jiang-Jen Lin

Materials Science and Eng. National Chung Hsing Univ.

Nanohybrids of AgNP, CNT and Clay Dispersion for Diversified Applications

15:20 15:50 Coffee Break

15:50 16:10

Prof. Chih Chen

Materials Science and Eng. National Chiao Tung Univ.

Fabrication and characterization of self-aligned nanostructures by atomic layer deposition

16:10 16:30

Prof. Suneel Kodambaka

Materials Science and Eng. UCLA

In situ Scanning Tunneling Microscopy and Low-Energy Electron Microscopy Studies of Epitaxial

Graphene on Pd(111)

16:30 16:50

Prof. Hong-Jun Gao

Institute of Physics Chinese Academy of Sciences,

Fabrication of Centimeter-scale, Highly-Ordered, Continuous Graphene on Metal Surfaces and Physical

Properties 16:50 17:10

Prof. Oscar Dubon

Materials Science and Eng. U.C. Berkeley.

Growth and defect properties of graphene on copper foil

9

September 9 (Thursday) Time Speaker Organization Title of presentation

Plenary Presentations II: Transition from Micro to Nanotechnology Chairs: Jenn-Ming Yang (UCLA) and Ingann Chen (NCKU)

08:40 09:20

Prof. Yoshio Nishi

Electrical Eng./Materials Sci. Stanford University Past, Present and Future of Silicon Technology

09:20 10:00

Vice President Dr. Dwight Streit

Northrop Grumman Aerospace Systems

The Past, Present and Future of Compound Semiconductor Technology

10:00 10:40

General Manager Dr. Ho-Ming Tong

Advanced Semiconductor Engineering Group The Coming-of-age 2.5D & 3D ICs

10:40 11:00 Coffee Break

11:00 11:40

Prof. Kang L. Wang

Electrical Eng. UCLA

Nano-materials enabling new nonvolatile VLSI nanoelectronics

11:40 12:20

General Director Dr. Yi-Jen Chan

Electronics and Optoelectronics Research Laboratories

Industrial Technology Research Institute

A 4.7" Active-Matrix Electrophoretic Panel Driven by Solution Processed Organic Thin Film Transistor

12:20 14:00 Lunch

Invited Presentations II-A: Nano-Devices Fabrication Chairs: Yi-Jen Chan (EOL/ITRI) and Yong Chen (UCLA)

14:00 14:20

Prof. Yong Chen

Mechanical and Aerospace Eng. UCLA

Synaptic Transistor with Signal Processing and Learning Functions

14:20 14:40

Prof. Pu-Wei Wu

Materials Science and Eng. National Chiao Tung Univ.

Facile fabrication of colloidal crystals and their inverse opals for optoelectronic and electrochemical

applications

14:40 15:00

Prof. Nosang Myung

Chemical & Environmental Eng. UC Riverside

Electrochemically Functionalized Single-Walled Carbon Nanotubes based Chemical and Biological

Sensor Arrays 15:00

15:20 Prof.

Fang-Gan Tseng Engineering and System Science

National Tsing Hua Univ. Nano structures enabled single protein molecule

manipulation and detection 15:20 15:50 Coffee Break

15:50 16:10

Prof. Mitch M.C. Chou

Materials and Optoelectronic Science National Sun Yat-Sen Univ.

Growth of nonpolar GaN and ZnO materials on the alternate substrates

16:10 16:30

Prof. Pei-Yu Chiou

Mechanical & Aerospace Eng. UCLA

Near Field Photothermal Printing of Gold Microstructures and Nanostructures

16:30 18:00 Poster Session

Invited Presentations II-B: Electronic Interconnects Chairs: Nasr Ghoniem (UCLA) and Chien-Neng Liao (NTHU)

14:00 14:20

Prof. Nasr Ghoniem

Mechanical and Aerospace Eng. UCLA

Computer Simulations of the Deformation of Nano-twinned Copper

14:20 14:40

Prof. Jacob C. Huang

Materials and Optoelectronic Science National Sun Yat-Sen Univ.

Nano-scale multilayered thin film metallic glassy composites

14:40 15:00

Prof. C. Robert Kao

Materials Science and Eng. National Taiwan Univ.

Massive spalling in multi-component systems: from an unproven theory to confirmed mechanism

15:00 15:20

Prof. Kwang-Lung Lin

Materials Science and Eng. National Cheng Kung Univ.

The Nanostructure in a Metal Alloy Triggered by Electrical Current Stressing

10

15:20 15:50 Coffee Break

15:50 16:10

Prof. Chien-Neng Liao

Materials Science and Eng. National Tsing Hua Univ.

Stability of nanotwinned Cu under electric current stressing

16:10 16:30

Prof. Albert T. Wu

Chemical and Materials Eng. National Central Univ.

The Applications of Synchrotron Radiation X-ray on Electronic Packaging

16:30 18:00 Poster Session

11

September 10 (Friday) Time Speaker Organization Title of presentation

Plenary Presentations III: Materials Enabling Energy Applications Chairs: Yang Yang (UCLA) and Jen-Sue Chen (NCKU)

08:40 09:20

Dr. Paul Weiss

California NanoSystems Institute UCLA

Designing, Measuring, and Controlling Molecular and Supramolecular Devices

09:20 10:00

Prof. Shuit-Tong Lee

Physics & Materials Science City University of Hong Kong

Silicon Nanostructures: Fabrication, Properties and Applications

10:00 10:40

Prof. Alex K.-Y. Jen

Materials Science and Eng. University of Washington

Molecular Design, Self-Assembly, and Interface Engineering for High-Performance Organic Thin Film

Transistors and Photovoltaic Cells 10:40 11:00 Coffee Break

11:00 11:40

Prof. Bruce S. Dunn

Materials Science and Eng. UCLA

Three-dimensional battery architectures for micropower applications

11:40 12:20

Prof. Luping Yu

Chemistry University of Chicago

Progress in Development of New Semiconducting Polymers for Highly Efficient Organic Solar Cells

12:20 14:00 Lunch

Invited Presentations III-A: Organic Photovoltaics Chairs: Qibing Pei (UCLA) and Kung-Hwa Wei (NCTU)

14:00 14:20

Prof. Sarah Tolbert

Chemistry & Biochemistry UCLA

Optimizing bulk and nanoscale architecture for improved performance in semiconducting polymer

based photovoltaics 14:20 14:40

Prof. Kung-Hwa Wei

Materials Science and Eng. National Chiao Tung Univ.

Conjugated Polymer/nanoparticle Nanocomposites for Optoelectronics Applications

14:40 15:00

Dr. Yongfang Li Chinese Academic of Science New fullerene derivatives for the application as

acceptor materials in polymer solar cells 15:00 15:20

Prof. Qibing Pei

Materials Science and Eng. UCLA Highly Flexible Polymer Light Emitting Devices

15:20 15:50 Coffee Break

15:50 16:10

Dr. Gang Li Solarmer Energy Inc. Coating and Fabrication of High Efficiency Polymer

Solar Cell Modules 16:10 16:30

Prof. Hongzheng Chen

Institute of Polymer Science and Eng. Zhejiang University

Morphology control in organic/inorganic hybrid materials for photovoltaic application

16:30 16:50

Prof. Tzung-Fang Guo

Institute of Electro-Optical Science and Engineering

National Cheng Kung Univ.

The magneto conductance responses and the optically-induced dielectrophoretic properties of

polymer bulk-heterojunction photovoltaic devices Invited Presentations III-B: Nano-materials in Electronics

Chairs: Minghwei Hong (NTHU) and Jane Chang (UCLA)

14:00 14:20

Dr. Tom Picraux

Center for Integrated Nanotechnologies

Los Alamos National Laboratory

Synthesis and Properties of Ge and Ge/Si Heterostructured Nanowires

14:20 14:40

Prof. Minghwei Hong

Materials Science and Eng. National Tsing Hua Univ.

Nano-electronics of high κ dielectrics on InGaAs and Ge for science and technology beyond Si CMOS

14:40 15:00

Prof. Edward Yi Chang

Materials Science and Eng. National Chiao Tung Univ.

Growth of III-V High mobility transistor structure on Si Substrate using SiGe Buffer for low power logic

device application

12

15:00 15:20

Dr. Ming-Jer Kao

Electronics and Optoelectronics Research Laboratories

Industrial Technology Research Institute

Next generation non-volatile memories

15:20 15:50 Coffee Break

15:50 16:10

Prof. Jane Chang

Chemical and Biomolecular Eng. UCLA

Challenges in the Synthesis and Integration of Multifunctional Complex Oxide Materials

16:10 16:30

Prof. Jr Hau He

Graduate Institute of Photonics and Optoelectronics

National Taiwan Univ.

Nanostructures for antireflection and their applications

16:30 16:50

Prof. Jen-Sue Chen

Materials Science and Eng. National Cheng Kung Univ.

Resistive Switching Behavior in Nano-structured Thin Films

13

September 08, 2010

Plenary Presentations I: Materials Enabling Nanotechnology

09:20 - 10:00 The memristor at age 40 R. Stanley Williams HP Laboratories

The existence of the fourth passive circuit element was proposed by Prof. Leon Chua of UC Berkeley in 1971 from fundamental symmetry arguments to augment the familiar resistance, inductance and capacitance equations. Although he showed that such a ‘memristor’ had many interesting and useful circuit properties, until 2008 no one had presented a physical model nor material example of such an element. In fact, memristance arises naturally in systems for which electronic and atomic/ionic transport are coupled under an external bias voltage. Simple analytical models show that memristance becomes much more important as the thickness of the active device region decreases, and thus memristors are mainly nanoscale structures that are difficult to produce as discrete devices. Memristor theory serves as the foundation for understanding a wide range of hysteretic current-voltage behavior observed, including both unipolar and bipolar switching, over the past 50 years in many electronic devices that involve the motion of atoms, vacancies or molecular components, which are now known as ReRAM or resistive-RAM devices. We have built nanoscale titanium dioxide memristors in our laboratory and have demonstrated both their fundamental electrical properties and several potential uses, including new forms of memory and logic circuits. Memristors can rather easily be integrated into electronic circuits using conventional fabrication techniques and materials available in standard CMOS fabrication facilities. This talk will describe several examples of operational memristor-transistor hybrid circuits and their uses.

14

10:00 - 10:40

Materials Research and Nanotechnology Maw-Kuen Wu Director, Institute of Physics, Academia Sinica, Taipei, Taiwan; Director General, National Program for Nanotechnology in Taiwan In order to respond to the severe global competition in the 21th century and to uplift Taiwan’s traditional industry, we have launched a National Program on Nanoscience and Nanotechnology. Various innovative and extraordinary research subjects covered by materials science and engineering have played the key role to bridge the academic and industrial technologies. Integration schemes that are cost effective and have high production yields have been developed and successfully implemented. In this presentation I shall give an overview of the National Program, especially focuses on the actions implemented to foster the integration of academic basic research and applied research in order to speed up the commercialization of the developed technologies. I shall also outline and describe the major themes of the second phase of the National Program for Nanotechnology.

15

11:00-11:40

Pushing the Limits of Fundamental Materials Properties via Nanoscale Design Jim Heath Caltech Chemistry There are several cases in which a fundamental limit to a physical property is well-defined by physical laws, but extremely difficult to achieve through materials design. In this talk, I will discuss two such limits, and how architectural control over the structure of a simple material can be harnessed to reach those limits. The first involves the theoretical limit on the maximum electrical current that can be passed through a superconductor. This is the depairing limit, and is defined as the point at which the kinetic energy of the charge carriers exceeds the superconducting condensation energy. This limit has been previously achieved only for transient currents, or in superconductors very near the transition temperature. I will describe a nanostructured Nb thin film that achieves the depairing current limit continuously, and over a broad temperature range. I will also describe the rationale for the design of that film.

A second limit involves the lower limit on the thermal conductivity of a single component system. This is typically referred to as the amorphous limit. I will discuss how single crystal Si thin films, again with precise architectural features at the nanoscale, can be designed to reach this amorphous limit, without detrimentally influencing other parameters, such as the electrical conductivity.

16

11:40 - 12:20

Toward Self-Powered Nanosystems: Nanogenerators and Piezotronics Zhong Lin Wang; School of Materials Science and Engineering; Georgia Institute of Technology, Atlanta USA Email: zlwang@gatech.edu

Developing wireless nanodevices and nanosystems is of critical importance for sensing, medical science, environmental/infrastructure monitoring, defense technology and even personal electronics. It is highly desirable for wireless devices to be self-powered without using battery. This is a new initiative in today’s energy research for mico/nano-systems in searching for sustainable self-sufficient power sources [1]. It is essential to explore innovative nanotechnologies for converting mechanical energy, vibration energy, and hydraulic energy into electric energy that will be used to power nanodevices. We have invented an innovative approach for converting nano-scale mechanical energy into electric energy by piezoelectric zinc oxide nanowire arrays [2]. The operation mechanism of the nanogenerator relies on the piezoelectric potential created by an external strain; a dynamic straining of the nanowire results in a transient flow of the electrons in the external load due to the driving force of the piezopotential. We have developed the nanogenerator from fundamental science, to engineering integration and to technological scale-up [3-6]. As today, a gentle straining can output 1.2 V from an integrated nanogenerator[6], using which a self-powered nanosensor has been demonstrated [1]. This is a key step for developing a totally nanowire-based nanosystem [6]. Alternatively, by substituting the gate voltage in a field effect transistor (FET) with the piezopotential creating by an external strain, we have fabricated a series of devices that rely on a coupling between semiconductor and piezoelectric properties and are controlled/tuned by externally applied force/pressure, such as diode, strain sensor and strain-gated logic unites, which are a new field called piezotronics [7]. A three way coupling among piezoelectricity, semiconductor and photonic excitation has demonstrated the piezo-phototronic effect [8].

[1] Z.L. Wang, Scientific American, 298 (2008) 82-87; Z.L. Wang, Advanced Functional Materials, 18 (2008) 3553-3567. [2] Z.L. Wang and J.H. Song , Science, 312 (2006) 242-246. [3] X.D. Wang, J.H. Song J. Liu, and Z.L. Wang , Science, 316 (2007) 102. [4] Y. Qin, X.D. Wang and Z.L. Wang, Nature, 451 (2008) 809-813. [5] R.S. Yang, Y. Qin, L.M. Dai and Z.L. Wang , Nature Nanotechnology, 4 (2009) 34-39. [6] S. Xu, Y. Qin, C. Xu, Y.G. Wei, R.S. Yang, Z.L. Wang*, Nature Nanotechnology, in press. [7] Z.L. Wang, Adv. Mater., 19 (2007) 889-992. [8] Y.F. Hu, Y.L. Chang, P. Fei, R.L. Snyder and Z.L. Wang, ACS Nano, 4 (2010) 1234–1240.

17

Invited Presentations I-A: Nano-devices for Optical/Energy Applications

14:00 - 14:20

Engineered Nanoscale Defects: Enabling Materials Integration Mark S Goorsky Department of Materials Science and Engineering; University of California, Los Angeles The ability to integrate different materials in a single device or circuit represents a revolutionary means to increase functionality, improve performance, and reduce costs and material use. The creation of nanoscale, buried defects promotes the transfer of template layers for subsequent device fabrication, or processed device structures. In particular, these applications are most readily suited to high cost, limited availability materials such as III-V semiconductors. Two means to generate a buried nanostructure layer are: light ion implantation and porous single crystal formation. The thermodynamic and kinetic issues associated with light ion implantation and subsequent transfer via exfoliation is discussed using a range of III-V materials with vastly different properties – GaSb to GaN. The processing steps required to produce transferred template layers also represent breakthroughs in technologies such as low temperature wafer bonding and chemical mechanical polishing. For porous single crystal formation, porous silicon represents a model system through which the nanomechanical properties of porous structures can be demonstrated, in excellent agreement with predictions based on natural systems. Extending this approach to III-V and germanium represents a means to dramatically lower costs associated with expensive, high efficiency III-V solar cells.

In both cases, the manipulation of the nanoscale properties, especially the mechanical properties is discussed as a way forward to include these techniques in modern semiconductor processing.

18

14:20 - 14:40

Synthesis of Au/Pt nanoparticles and its application in PEM fuel cell Rong-Hsing Huang, Wen-Kai Chao, Fuh-Sheng Shieu* Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan *Corresponding author: Fax: 886-4-2285-7017 E-mail: fsshieu@dragon.nchu.edu.tw

It is known that the particle size and distribution of Pt catalyst have a great influence on the performance and durability of PEM fuel cell. In this study, the electrochemical technique and impregnation method were employed to prepare Pt/Au nano-particles well-dispersed on the surface of carbon black (XC-72) with the presence of citryltrimethylammonium bromide (CTABr) as the dispersant. For increasing the performance and durability of Pt/Au-C catalyst, an appropriate thermal treatment condition was used to efficiently remove CTABr from the interface between Pt/Au and carbon black. Since the usage of Au nano-particles as co-catalyst is beneficial to solve the CO-poison phenomenon that the Pt catalyst often encountered in the presence of CO, the novel co-catalyst structure that plating ultra-small Pt nano-particles (4 nm) on the surface of Au nano-particles (15 nm) is expected to benefit the performance of PEM fuel cell.

19

14:40 - 15:00

Patterned III-V Nanopillar Arrays for Integrated Nanodevices Diana Huffaker California Nanosystems Institute, University of California, Los Angeles

We describe formation and applications of lithographically-defined III-V crystalline nanopillars (NPs). The catalyst-free growth mode enables integrated design of pillar diameter, pitch and most important, device registration. Material systems include III-As, P, Sb to access wavelength range from UV to IR. Control of growth conditions enables the in-situ formation of either axial or core-shell p-n junctions and heterojunction NPs on SiO2-masked (111)B substrates. The photonic and electrical properties of axial and core-shell p-n junctions are characterized from both single NPs and NP arrays. Device applications such as photoconductors and solar cells are discussed.

20

15:00 - 15:20

Surface Plasmon Resonance Enhanced Light Extraction for Light Emitting Diodes

Chuan-Pu Liu*, Cheng-Hsueh Lu, and Chia-Chun Lan Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; *email: cpliu@mail.ncku.edu.tw

The low efficiency of Light emitting diodes, especially for InGaN/GaN in blue light, can be enhanced by increasing internal quantum efficiency or light extraction with numerous approaches. As one of the approaches, recently, much attention has been paid to enhance light emission efficiency from InGaN/GaN multiple quantum wells (MQWs) by coupling to Surface plasmons (SPs). When a metal layer is placed in close proximity to the quantum well (QW) while the bandgap energy of the InGaN active layer is close to the energy of the SPs, the energy can be transferred from the QW to the SPs resulting in a hybridized excitation, which is called a surface plasmon polariton (SPP). This SPP energy coupling mode is characterized by high density of states and fast coupling rate, which provides a fast path for electron-hole pair recombination and consequently increases the spontaneous emission rate, thereby enhances internal quantum efficiency. In this work, we demonstrate an approach to make the metallic SPs-producer in very close proximity to the active layer. In the mean time, the thickness of the p-GaN layer need not be reduced. Periodic hole arrays were engraved first on the surface of the p-GaN layer, and the silver nano-particles were then filled into these holes to play the role of SPs production layer. Moreover, the structure with this design is expected to offer another advantage in light extraction enhancement from the rough surface, i.e, the nano-patterns. Ultimately, a SP-enhanced LED with both high light extraction efficiency and high internal quantum efficiency is demonstrated.

21

15:50 - 16:10

Chemical lift-off technology for high-efficiency LEDs and solar cells Dong-Sing Wuu*, Tsung-Yen Tsai, and Po-Rung Lin Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 40227, Republic of China; *email: dsw@dragon.nchu.edu.tw

GaN-based III-nitrides are commercial materials for optoelectronic devices such as light emitting diodes (LEDs). Due to the lack of bulk large-area GaN native substrate, the GaN-based LEDs are commonly grown on available dissimilar substrates such as SiC or sapphire. Sapphire has been widely used for growing GaN-based LEDs because of its hexagonal wurtzite structure and high thermal stability. However, the thermal conductivity of sapphire is not good enough for large scale GaN-based LEDs. Both the brightness and wavelength of LEDs are affected by the thermal effects of sapphires. In order to enhance the performance of optoelectronic device, transferring the prefabricated devices from conventional sapphire substrates onto more thermally and electrically conductive substrates such as copper was investigated. Nowadays, the laser lift-off technique has been established as an effective tool for the integration of GaN-based LEDs with a variety of dissimilar substrate. In this presentation, we will describe a method for removing the original substrate by wet etching via the sacrificial structure. Additionally, the photovoltaic characteristics of p-i-n GaN/InGaN thin film solar cells also show better performance in open circuit voltage, fill factor, and shunt resistance after removing the sapphire substrates. Transformation of the as grown 2-inch nitride-based epitaxial structure to a heat sink substrate can be easily achieved and contributes to the recycling of the original sapphire substrate.

22

16:10 - 16:30

Hydrogen Bond Interaction Mediated Self-Assembly Nanostructure Materials Shiao-Wei Kuo Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung; E-mail: kuosw@faculty.nsysu.edu.tw

Self-organizing materials make the “bottom up” method a relative simple and low-cost process to fabricate large-area periodic nanostructures from diblock copolymers by controlling their self-assembly behavior. Diblock copolymers can form many different well-defined self-assembled nanostructures in the bulk state, including lamellar, hexagonally packed cylindrical, and body-centered cubic micellar structures, as a result of the presence of two immiscible polymer chains connected by covalent bonds and depending on the relative volume fractions of the blocks, the total degree of polymerization, and Flory–Huggins interaction parameter. Hydrogen bonding in block copolymer mixtures with nanostructure has been a topic of intense interest in polymer science because of their potential applications such as their electronic, photonic, and magnetic properties. Combining self-assembly block copolymer with supramolecular structure offers unique possibilities to create new materials with tunable and responsive properties. In this study, we will summary recent investigations on the preparation of block copolymer mixtures through mediated by hydrogen bonding.

23

16:30 - 16:50

Modeling of Nucleation in Open Nanosystems A.M.Gusak*, F.Hodaj**, T.V.Zaporozhets*, A.O.Kovalchuk*, O.Yu. Lyashenko*** *Cherkasy National University (Ukraine) ** Grenoble Institute of Technology (France) *** Kiev National University (Ukraine)

Analytic, numeric phenomenological and atomistic Monte Carlo models of nucleation will be presented for the

following open nanosized systems: 1) first nucleation of silicide in silicon nanowire in the point contact reaction with metallic nanowire, 2) repeating nucleation of 2D islands in the process of jerky growth of silicide along the silicon nanowire, 3) repeating nucleation of 2D islands of silicon at the bottom of liquid gold droplet in the mononuclear

regime of VLS growth of nanowires, 4) nucleation of voids during hollow nanoshell formation in spheres and cylinders.

The following peculiarities are taken into account in all mentioned cases: A. “Feedback” via depletion: in nanovolume even one successful nucleation may cause significant

depletion of whole nanosystem with one of components, changing the driving force for next nucleation. In other words, system should “recover” from previous nucleation before trying the next one.

B. Each nucleation proceeds in non-steady-state conditions

Time correlation. The random nucleation process is not markovian. Each new waiting time is correlated with previous one. One might expect the negative time correlation between the nearest waiting times.

24

Invited Presentations I-B: Nano-structured Materials

14:00 - 14:20

Synthesis, Characterization and Electronic Applications of Chemically Converted Graphene R.B. Kaner1,2, J.K. Wassei1, S. Dubin1, J. D’Arcy1, M. E. Kady1, K. Wang1, M.J. Allen1, V.C. Tung2, K. Cha2 and Y. Yang2; 1Dept. of Chemistry & Biochemistry, 2Dept. of Materials Science and Engineering, and California NanoSystems Institute, UCLA

Single layer graphene is of great interest for electronic applications as an atomically thin, zero band gap semiconductor. Experimental results so far have been limited due to the difficulty of creating large, single layer samples. Here we report a competitive approach to the large-scale production of single layer chemically converted graphene (CCG). By dispersing graphite oxide paper in pure hydrazine, we are able to remove oxygen functionalities while preserving the integrity and restoring the planar geometry of single sheets. The CCG sheets

produced with this method have among the largest areas of any yet reported (up to 20 x 40 μm), making them relatively straightforward to process. Field effect devices have been fabricated by conventional photolithography and display currents that are three orders of magnitude higher than those previously reported for CCG. The versatility of solution processing also enables single layer graphene sheets to be registered using a PDMS stamping technique. Through surface energy manipulation, large-scale registration of graphene is now possible. Raman spectroscopy has been used to confirm uniform registration across large areas. Due to the large size of these sheets, comprehensive studies including optical microscopy, AFM, SEM and FET device characterization can all be performed on the same specimen. By combining graphene and carbon nanotubes, flexible, conducting, transparent windows can be made. This solution processing of carbon-based materials thus holds great promise for nanoelectronic applications. [1] S. Gilje, R.B. Kaner, et al., NanoLetters, 7, 3394 (2007).

[2] D. Li, R.B. Kaner, et al., Nature Nanotechnology, 3, 101 (2008). [3] D. Li and R.B. Kaner, Science, 320, 1170 (2008). [4] V.C. Tung, R.B. Kaner et al., Nature Nanotechnology, 4, 25 (2009). [5] J. Fowler, et al., ACS Nano, 3, 301 (2009). [6] V.C. Tung, R.B. Kaner, et al., Nano Letters, 9, 1949 (2009). [7] M.J. Allen, et al., Advanced Materials, 21, 2098 (2009). [8] M.J. Allen, V.C. Tung and R.B. Kaner, Chem. Rev.. 110, 132

(2010).

25

14:20 - 14:40

Thermally Assisted Photoreduction of Vertical Metallic Nanowires In-Gann Chen*a, Hsien-Tse Tunga, and Jenn-Ming Songb a Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan; b Department of Materials Science and Engineering and Nanotechnology Research Center, National Dong Hwa University, Hualien, Taiwan *email: ingann@mail.ncku.edu.tw Vertically grown metallic nanowires (e.g. Ag[1], Au[2], and Cu[3] NWs) with 100-150 nm in diameter and 5-10 um in length have been successfully prepared by thermally assisted photoreduction (TAP) without using surfactants, templates or seeds. Results of X-ray diffraction (XRD) and transmission electron microscope (TEM) analyses show that the metallic NWs thus produced are single crystalline with a preferred growth direction along

]011[ for Ag . The electrical behavior investigated using a nano-manipulation device reveals that the resistivity of

the Ag NW is about 18.79 ohm- cm　 with a current density in the order of 106 A/cm2. The nucleation and yield are closely related to the crystallinity, surface morphology, and the photocatalytic ability of the anatase substrate [4]. The length of NWs is dominated by the temperature of the post heat treatment, which affects the supply of thermal-electrons for the NW growth. It is also demonstrated that various face-centered cubic (FCC) metallic NWs, including gold and copper, can also be obtained by the TAP process. The yield of NWs is inversely proportional to the charge number of the metallic cations in aqueous solution. [1] H.T. Tung, J.M. Song, C.W. Yen, and I.G. Chen*, Jour of Materials Chemistry, 19, 2386, (2009).

[2] H.T. Tung, J.M. Song, Y.T. Nien, and I.G. Chen*, Nanotechnology, 19, 455603 (2008). [3] H.T. Tung, J.M. Song, T.Y. Dong, W.S. Hwang, and I.G. Chen*, Crystal Growth and Design, 8, 3415, (2008). [4] H.T. Tung, J.M. Song, S.W. Feng, C.S. Kuo, and I.G. Chen*, Phys. Chem. Chem. Phys., 12, 740, (2010).

26

14:40 - 15:00

Nanoelectronic devices from nanowire heterostructures Yu Huang Department of Materials Science and Engineering, University of California Los Angeles

A bottom-up approach, where functional electronic structures are assembled from chemically synthesized, well-defined nanoscale building-blocks, has the potential to go far beyond of the limits of top-down technology by defining key nanometer scale metrics through chemical synthesis and subsequent assembly. This approach can generate conceptually new device architectures and fundamentally different fabrication strategies, and provide unparalleled speed, storage and size reductions. Nanowires (NWs) have attracted increasing interest in the past decade because they represent the smallest dimension for efficient transport of electrical carriers and have great potential as efficient interconnects for next generation of nanoelectronics. In this presentation I will talk about our recent efforts in generating silicide-silicon-silicide heterostructures in individual synthetic Si NWs through solid state reaction. Notebly, the Si region in the NW heterostructure may be controlled down to sub-5 nm, with atomically sharp interfaces between Si and silicides. The structure and electrical properties of the NW heterostructures were studied. In specific, by choosing different silicides as the contacts, we have fabricated high performance nanoscale field-effect transistors and detected spin polarized transport in silicon nanowires.

27

15:00 - 15:20

Nanohybrids of AgNP, CNT and Clay Dispersion for Diversified Applications

Jiang-Jen Lin* and Rui-Xuan Dong Department of Material Science and Engineering, and Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung, Taiwan; Institute of Polymer Science and Engineering, National Taiwan University, Taipei, Taiwan; *email: jianglin@ntu.edu.tw; Jiangjenlin@gmail.com

The natural silicate clays with a lamellar geometric shape could be modified through ionic exchange reactions with polyamine-salts. The use of polyoxypropylene-diamine derived polymers for the clay modification generates the organoclays with hydrophobic and self-emulsifying properties, and allows expansion of the clay’s interlayer spacing. Here we investigate the role of layered silicate clays as a support for surface interactions with Ag ions and in situ reduction to Ag0 nanoparticles. The generated AgNP/clay hybrids were characterized for their particle size, polydispersity, and physical properties. In particular, the AgNPs on clay exhibited a very low melting temperature (110 oC). By using organic dispersants, the finely dispersed AgNP/CNT nanohybrid can be synthesized and isolated. Its polymer composite film showed a low sheet resistance (2.2 x 10-1 Ohm/sq), unprecedented in literature for such a high conductivity. Upon further heating to 350 oC, the films turned into whitish surface possessing even lower electrical resistance (2.7 x 10-2 Ohm/sq).

Versatility of AgNPs in particle size, low melting point and high conductivity can be tailored by selecting the polymeric dispersants and nanoclay or CNT nanomaterials as supports. The materials are proposed to be used for RFID, conducting devises and direct inject printing patterns.

28

15:50 - 16:10

Fabrication and characterization of self-aligned nanostructures by atomic layer deposition Chih Chen1,*, Yung-Huang Chang1, Yuan-Chieh Tseng1, and Hsyi-En Cheng2 1Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China 2Department of Electro-Optical engineering, Southern Taiwan University, Tainan 710, Taiwan, Republic of China *email: chih@mail.nctu.edu.tw In recent years, one-dimensional (1D) semiconductor nanostructures have attracted considerable interest due to their unique physical and chemical properties. Moreover, anodic aluminum oxide (AAO) has been widely used as a template to prepare 1D self-aligned nanostructure because the AAO pores have high aspect ratio. ALD is known to have superb capability in filling pores with high aspect ratios. Thus, we employed ALD to grow 1D nanostructures, including ZnO nanorods and nanotubes, TiO2 nanorods and nanotubes, as well as Ni/ TiO2 core-shell nanostructures. By using the AAO template and ALD approaches, self-aligned and equal-height nanostructures can be fabricated on p-type Si substrates. Results from Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) will be presented to show the nanostructures of the nanorods and nanotubes.

Some of the properties, such as photoluminescence and field emission has been investigated and the results will be reported. In addition, we also investigated Schottky- and ohmic-contact effects upon the photoresponses of ITO/TiO2/Si and Ti/TiO2/Si nanotube-based photodiodes. The contact area between the electrode (Ti or ITO) and TiO2’s tip was varied by tuning the tube’s inner wall-thickness with ALD, providing a direct and systematic probe of the hetero-junction effects upon the photodiodes’ responses. Results show that the Ti/TiO2/Si diode exhibits a highly thickness-dependent photoresponse. This is because the photocurrent is driven by the p-n junction at TiO2/Si alone and it faces no retarding at the ohmic contact of Ti/TiO2. For the ITO/TiO2/Si diode, the Schottky contact at ITO/TiO2 regulates photocurrent overriding TiO2/Si as a result of higher efficiency in photogeneration, leading to the opposite response compared with the Ti/TiO2/Si diode. Respective energy band diagrams are provided to support the statements above, and a consistent picture is obtained for both time-response and quantum efficiency measurements.

29

16:10 - 16:30

In situ Scanning Tunneling Microscopy and Low-Energy Electron Microscopy Studies of Epitaxial Graphene on Pd(111) S. Kodambaka Dept. Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095

The discovery of two-dimensional graphene crystals has generated considerable excitement in the research community with potential for revolutionizing electronics industry owing to its ultra-thin geometry, high carrier mobility, tunable band gap, and high thermal conductivity and mechanical strength. Recent efforts focused on, and succeeded in, the fabrication of large-area graphene on a variety of substrates, an encouraging step toward realization of graphene-based devices. However, very little is known concerning the role of substrate-graphene interactions on its electronic properties. Here, we show that electronic properties of epitaxial graphene is controlled by the growth substrate and can be considerably different from that of free-standing graphene. Using in situ scanning tunneling microscopy and spectroscopy (STM and STS) and low-energy electron microscopy and diffraction (LEEM and LEED), we investigated the growth and structure of graphene on Pd. In the STM, we follow the growth of graphene during chemical vapor deposition of ethylene at temperatures between 300 and 1000 K. We obtain graphene islands, as large as 2000 Å, which are surprisingly semiconducting with a bandgap of ~ 0.3 eV. In the LEEM, graphene layers are grown via precipitation from the bulk upon cooling from high temperatures. We find that monolayer graphene can form rotational domains with at least five different orientations. From the electron reflectivity values, measured from the LEEM image intensities as a function of incident electron energies, we determined the work functions of graphene to be ~ 4.3±0.1 eV. Using density functional theory (DFT) calculations, we attribute all of our observations to strong interactions between carbon and Pd atoms. Our results suggest that electronic properties of epitaxial graphene can be tailored by the appropriate choice of substrate.

30

16:30 - 16:50

Fabrication of Centimeter-scale, Highly-Ordered, Continuous Graphene on Metal Surfaces and Physical Properties* Hong-Jun Gao Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China

The limited size and quality of the single- and multi-layer graphene synthesized with existing methods hinders the investigation of the intrinsic physical properties of graphene and the realization of its potential applications in future electronics. In this presentation, I will talk about a new method for synthesizing large scale single layer graphene on a variety of metal surfaces. Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), and Auger spectroscopy results indicate that the graphene has grown to millimeter dimensions with good long-range order, continuity, and crystallinity. It has also been demonstrated that a graphene-based quantum dot array can be formed through a Moiré pattern of graphene on the Ru(0001) surface. Furthermore, this high quality sample has demonstrated that single layer graphene can greatly modulate the thermoelectric potential and polarity of the system. In addition, such a graphene-based Moiré pattern facilitates study of the adsorption behavior of clusters and molecules.

References: 1. Y. Pan et al., Adv. Mater. 21, 2777 (2009); Y. Pan et al., Chinese Physics 16, 3151 (2007). 2. M. Gao et al., Appl. Phys. Lett. 96, 053109 (2010) 3. J. H. Mao et al., J. Am. Chem. Soc 131, 14146 (2009). 4. Y. Pan et al., Appl. Phys. Lett. 95, 093106 (2009).

*In Collaboration with Y. Pan1, M. Gao1, H.G. Zhang1, Y.Y. Zhang1, J.H. Mao1, Y.H. Jiang1, L. Huang1, H.T. Zhou1, L. Gao1, Q. Liu1, H.M. Guo1, Y.L. Wang1, W.D. Xiao1, S.X. Du1, and F. Liu2. 1Institute of Physics, Chinese

Academy of Sciences, Beijing 100190, PR China & 2University of Utah, USA

31

16:50 - 17:10

Growth and defect properties of graphene on copper foil O. D. Dubon Department of Materials Science & Engineering, University of California at Berkeley and Lawrence Berkeley National Laboratory, Berkeley, CA 94720

Graphene, a sheet of sp2-bonded carbon atoms, is being investigated intensively, both theoretically and experimentally, due to its potentially transformative impact across a wide range of applications including advanced electronics and sensing. The realization of graphene as a useful electronic material requires the control of graphene growth at the wafer scale. Thus far, graphene formed by epitaxial growth on Cu foils has emerged as an important route for the synthesis of large-area films. However, while much progress has been made in understanding the properties of nearly perfect graphene materials—particularly exfoliated graphene flakes—much less is known about imperfections and their impact on electronic properties in the technologically more relevant large-area, eptiaxial graphene films. To address challenge, we are investigating the growth of graphene on copper foil using low-energy electron microscopy. We find a complex interdependence between the growth behavior of graphene and dynamic effects of the Cu surface. We will discuss the nucleation and structural evolution of the graphene islands and the implications of these to higher quality graphene growth. This work is conducted in collaboration with J. M. Wofford (U.C. Berekely and Lawrence Berkeley National Laboratory) and S. Nie, N. C. Bartelt, and K. F. McCarty (Sandia National Laboratories).

32

September 09, 2010

Plenary Presentations II: Transition from Micro to Nanotechnology

08:40 - 09:20 Past, present, and future of silicon technology Yoshio Nishi Department of Electrical Engineering, Department of Material Science Center for Integrated Systems, Stanford University, Stanford, California More than a half century has passed since the inventions of transistor and integrated circuits, and we have been successful in continuously improve density, performance and cost of Si based CMOS integrated circuits until today. However, it has been a lingering question about whether we can keep the pace of Moore’s Law with geometry scaling principle in the future technology node. A number of approaches have been tried for break through the red brick wall, by either introducing new materials at nanoscale geometry for logic and memory or paradigm change from 2D integration to 3D integration for co-integration of variety of devices. Furthermore, non-traditional applications of nanoelectronics devices for bio/medical, energy, environment seem quickly expanding the horizon for the future opportunity. This clearly suggests the magnitude of challenges will be huge if we need to invent/discover solutions to all of problems. However, when we look back what we had done in the past, there are a variety of investigations already done, and some of them will have new lives in the era of nanoelectronics. This talk will cover a short review of the trajectory of silicon technology development, the challenges we face today, and the perspective of silicon based technology in the future eras.

33

09:20 - 10:00

The Past, Present and Future of Compound Semiconductor Technology Dwight C. Streit Vice President, Electronics and Sensors; Northrop Grumman Aerospace Systems

Compound semiconductors such as gallium arsenide, indium phosphide, and gallium nitride are playing an ever-increasing role in a wide variety of commercial and government communications, surveillance and radar systems. We present here an overview of the development history of compound semiconductor technology, together with a snapshot of current performance characteristics and a view towards the future for these systems. As an example, GaAs evolved from a laboratory curiosity in the 1960s to the basis for a majority of cellular power amplifiers in the 1990s. Large government funded technology-development programs such as MIMIC in the 1980s and 1990s provided a foundation for the maturation of compound semiconductor technology. One of the goals of the MIMIC program was the insertion of compound semiconductors in commercial products to form an industry-wide platform for high-volume, low-cost production. As a result, compound semiconductors are now ubiquitous in microwave and millimeter-wave platforms. The future for this technology is constantly evolving to include not only higher performance characteristics but also entirely new product lines such as solid-state lighting and terahertz imaging. The past and present of compound semiconductors is presented with an eye toward predicting the potential future of this important technology.

34

10:00 - 10:40

The Coming-of-age of 2.5D & 3D ICs Ho-Ming Tong Chief R&D Officer & General Manager of Group R&D; ASE Group

Consumer devices will drive 10x computations and 10x data rate in this decade to deliver compelling user experiences. As the end of planar CMOS transistor scaling is near, 3D IC holds great promises to bridge the gaps between SoC and future system requirements. Despite great strides made in the recent past, 3D IC still presents significant challenges in manufacturing, integration, infrastructure and business model. Driven by handheld and PC applications, these challenges will likely be overcome in the next few years. Before 3D IC can be commercialized on a large scale, much attention needs to be drawn to the 2.5D IC, which is based on silicon interposer, as it paves the inevitable road for the 2D IC migration to the 3D IC infrastructure. In this overview, I will summarize the latest development of 2.5D and 3D ICs in the industry as well as their product applications.

35

11:00 - 11:40

Nano-materials enabling new nonvolatile VLSI nanoelectronics Kang L. Wang; Raytheon Professor Device Research Laboratory (DRL) Marco Focus Center on Functional Engineered Nano Architectonics – FENA; Western Institute of Nanoelectronics – WIN; California NanoSystems Institute; 66-147 Engineering IV 420 Westwood Plaza, University of California, Los Angeles, Los Angeles, CA 90095-1594 P: 310-825-1609, Email: wang@ee.ucla.edu W: www.fena.org; www.win-nano.org; www.drl.ee.ucla.edu

Today’s most outstanding challenges of VLSI electronics as identified by ITRS are: power dissipation per chip, variability and the limit of the physical size. We will discuss the options in meeting these challenges by the use of nanomaterials since nanomaterials make possible heterogeneous integration of dissimilar materials by accommodation of strain and minimizing defects. In the nanoscale, it also make easy to have devices operating in non-equilibrium so as to reduce the energy dissipation below the Maxwell’s, Shannon’s, and Landaur’s limit. Different nanoscale materials have been explored, including nanowires, carbon materials and spintronics materials. In particular, we will discuss the exposé, in that spintronics as a collective effect with appropriate order parameters such as magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between today’s electronics and collective spintronics in terms of variability, in affecting nano-manufacturing, shows that quantum fluctuation in collective spins is much smaller. In addition, using collective spins or nanomagnets offers the possibility of constructing nonvolatile electronics which allows for power savings in dynamic switching and during standby. However, most of devices with magnetic moment have usually used current to drive devices and consequently, power dissipation is a major issue. We will show that using dilute magnetic semiconductor (DMS), MnGe, electric-field control via carrier-mediated transition from the paramagnetic to the ferromagnetic phases can be done at room temperature. This effort provides the new perspective of the use of electric field controlled nonvolatile electronics as enabled by nanoscale materials.nt and in/semi-coherent growth behaviors. The observations reported herewith may further suggest the possibility of producing supersaturate solid solution in a metal alloy.

36

11:40 - 12:20

A 4.7" Active-Matrix Electrophoretic Panel Driven by Solution Processed Organic Thin Film Transistors

Yi-Jen Chan, Chih-Hao Chang, Tsung-Hua Yang, Chun-Cheng Chou, Ko-Yu Chiang, Yen-Min Hsieh, Chueh-Wen Liu, Po-Yuan Lo Electronics & Optoelectronics Research Laboratories (EOL)/Industrial Technology Research Institute (ITRI), Taiwan Address: 0F100, EOL/ITRI, Bldg. 51, 195, Sec. 4, Chung-Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.; *email:yjchan@itri.org.tw

A panel with an organic thin film transistors (OTFTs) array on a 4.7-inch flexible substrate is successfully fabricated. The Sipix electrophoretic medium was laminated on the OTFT array to form a VGA display panel of OTFT-EPD, which is driven successfully. The VGA panel has pixel size of 150×150 μm and aperture ratio of 40 %, while the channel length and channel width in each pixel were defined as 10 μm and 100 μm, respectively. Traditional LCD manufacturing processes were adopted to complete the fabrication of the array. The devices performances of OTFT on mobility, on on/off ratio of ID-VG curve, on subthreshold swing and threshold voltage of OTFT are 0.015 cm2/V-s,106, 1.1 V/dec and -3.2 V, respectively.

37

Invited Presentations II-A: Nano-Devices Fabrication

14:00 -14:20

Synaptic Transistor with Signal Processing and Learning Functions Yong Chen Mechanical and Aerospace Engineering; Materials Science and Engineering California NanoSystems Institute; University of California, Los Angeles

Signal processing, memory, and learning functions are established in the human brain by modifying ionic fluxes in neurons and synapses. Through a synapse, a potential spike signal in a presynaptic neuron can trigger an ionic excitatory postsynaptic current (EPSC) or inhibitory postsynaptic current (IPSC) that temporally lasts for ~1-100 ms in a postsynaptic neuron. This enables the postsynaptic neuron to collectively process the EPSC or IPSC through ~1000 synapses to establish spatial and temporal correlated functions. The synaptic transmission efficacy can be modified by temporally correlated pre- and post-synaptic spikes via spike-timing-dependent plasticity (STDP). STDP is essential to modify synapses in a neural network for learning and memory functions of the brain. Electronic materials, devices, and circuits have been explored extensively to emulate synapses, but to date they have not been able to match the synaptic functions in the brain. We have designed and fabricated a synaptic transistor based on ionic/electronic hybrid materials by integrating a layer of ionic conductor and a layer of ion-doped conjugated polymer, onto the gate of a Si-based transistor. In analogy to the synapse, a potential spike can trigger ionic fluxes with a temporal lapse of a few milliseconds in the polymer, which in turn spontaneously generates EPSC in the Si layer. Temporally correlated pre- and post-synaptic spikes can modify ions stored in the polymer, resulting in a nonvolatile strengthening or weakening of the device transmission efficacy with STDP. A single hybrid transistor can replace presently utilized complex and energy-consuming electronic circuits to emulate the synapse for spike signal processing, learning, and memory, which could provide a new pathway to construct neuromorphic circuits approaching the scale and functions of the brain.

38

14:20 - 14:40

Facile fabrication of colloidal crystals and their inverse opals for optoelectronic and electrochemical applications Pu-Wei Wu*, Yi-Jui Huang, Chun-Han Lai, Li-Yin Chen, and Li-Yeh Wang Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China *email: ppwu@mail.nctu.eud.tw

We demonstrate the large-scale fabrication of colloidal crystals via an electrophoretic deposition of

polystyrene and silica microspheres in both planar and cylindrical forms. After adjusting relevant processing parameters including the type of solvent, pH value, electrical field, colloidal concentration and size, electrophoresis time, and electrode arrangement, we are able to obtain colloidal crystals with significantly reduced defects and adjustable thickness/layers. Subsequently, the interconnected voids among the microspheres are electrodeposited with metals and oxides, followed by removal of colloidal templates to produce an inverse opal structure at well-defined morphology and layer/thickness.

The optical properties for the planar colloidal crystals reveal typical photonic bandgap characteristics. However, the cylindrical colloidal crystals display a dispersive photonic bandwidth with a slight shift in the photonic bandgap which is attributed to the scattering of reflection planes around a curved contour.

Since the inverse opals consist of 3D ordered pores in submicron meter length scale, in our laboratory, they are evaluated for optoelectronic and electrochemical applications respectively. For optoelectronic purposes, we prepare a monolayer ZnO inverse opal atop a III-V light-emitting device and demonstrate considerable enhancement in light escape efficiency. This notable improvement is due to the composite ZnO/PS structure that renders a graded effective refractive index bridging the III-V material underneath and air above. For electrochemical applications, we explore the inverse opals (Ni) for water electrolysis and demonstrate substantial increases for both H2 and O2 generation with robust mechanical stability over planar electrodes. Further improvements involving a displacement reaction to spontaneously deposit active electrocatalysts onto the Ni inverse opal are also discussed.

39

14:40 - 15:00

Electrochemically Functionalized Single-Walled Carbon Nanotubes based Chemical and Biological Sensor Arrays Prof. Nosang V. Myung Department of Chemical and Environmental Engineering University of California-Riverside

Electronic detection of molecules is rapidly emerging as an alternative to the tranditional optical and electrochemical methods because of the small size, low-power consumption, improved sensing performance and most of all possibility of developing high density arrays for simulatenous analyses of multiple species in small sample volumes. Recently, one-dimensional nanostructures (e.g. carbon nanotubes (CNTs), inorganic, and organic nanowires) as conduction channels of field effect transistors (FETs) have been developed for detection of a variety of gaseous and biological molecules with excellent low detection limit, sensitivity, and selectivity. These features are a consequence of dramatic decrease in characteristic length and increase in the ratio of surface to volume atoms, allowing for rapid diffusion into the bulk and for a more significant fraction of the atoms to participate in surface processes such as chemical and biochemical binding interactions. Additionally, the Debye length, which is a measure of electric field penetration into the bulk of the material, is comparable to the diameter of the nanostructures permitting charged adsorbates to impose a stronger influence on charge carrier transport. One-dimensional geometries also enhance response times by virtue of their two-dimensional mass transfer profile. Furthermore, nanowires are heralded for device miniaturization and sensor arrays, enabling duplicate elements to reduce false positives/negatives and pattern recognition systems termed electronic noses/tongues where each sensor in the array has a unique response to every analyte creating a fingerprint type response that increases sensitivity and selectivity. Finally, sensors are also attractive for their proven commercial viability, as this approach uses a single material behaving as both the sensitive layer and transducer to directly covert chemical information into an electronic signal without the need for labels, allowing for real-time, continuous monitoring. In this presentation, synthesis, functionalization, and assembly of CNTs will be discussed to create “true” high density gaseous and biological sensor arrays with superior sensing performance in cost-effective matter. In addition, newly developed displacement format based nano biosensor will be discussed for detecting small and/or uncharged molecules of interest in environmental monitoring and health care.

40

15:00 - 15:20

Nano structures enabled single protein molecule manipulation and detection

F. G. Tseng Engineering and System Science Department, National Tsing Hua University, Taiwan, ROC, Division of Mechanics, Research Center for Applied Sciences, Academia Sinica, Taiwan, ROC; *email: fangang@ess.nthu.edu.tw

Protein microarray, a solid phase assay for protein-protein interactions in batch, has been becoming an important tool in proteomics for diagnostic and screening purposes as well as for basic research. To extend the current protein micro array into single molecule based protein nanoarray, several novel techniques will be employed to immobilize single molecule in an isolated reaction site for the study of single enzyme kinetics/dynamics by signal excitation in a very low volume ( < aL). The operation employs a zero dimensional 4-10 nm gold nano particles (GNPs) to immobilize single enzyme molecules on a tip of self-assembled, isolated and transparent nanocones. The nanocone structures are dry-etched on a transparent material with the self-assembled gold nanoparticle as a mask with a dimension of 10-40 nm atop diameter. To obtain the fluorescence signal of the single molecule event on the GNP top, near-field excitation will be performed through the transparent nanocone 1D wave guide and the generation of surface plasmon wave on the GNP surface. The excitation volume thus can be reduced into less than sub-aL range (~20-50 nm in diameter), a very localized excitation to greatly reduce background noise. On the other hand, the dynamic range of the applicable substrate concentrations can be enlarged by localized sample concentration techniques combining the actions of surface tension gradient and AC electro-osmosis flow. As a result, the detection of substrate concentration from 1 fM (~1-10 molecules/10000 μm2) to 1 μM is feasible, allowing a 6-9 orders of magnitude of dynamic range.

41

15:50 - 16:10

Growth of nonpolar GaN and ZnO materials on the alternate substrates

Mitch M.C. Chou*, Chenlong Chen, Jin-Wei Lu, and Chu-An Li Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, R.O.C.; *email: mitch@faculty.nsysu.edu.tw

Nonpolar free-standing a-plane GaN [11-20] and m-plane [10-10] single crystal was fabricated on the closely lattice-matched [100] LiAlO2, [010] LiGaO2 substrate by a modified hydride vapor phase epitaxy (HVPE) method. The influence of the growth temperature on the crystal quality was studied. The surface morphologies were characterized by scanning electron microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction and transmission electron microscopy. High resolution transmission electron microscopy shows the in-plane structural relationship of [10-10] GaN // [100] LiAlO2 and [11-20]GaN // [010]LiGaO2. Optical properties examined by photoluminescence spectroscopy exhibited a strong emission peak at 3.348 eV. Our results suggest that LiAlO2 and LiGaO2 are the promising substrates in the development of nonpolar GaN homoepitaxy. We also grow nonpolar m-plane and a-plane ZnO epitaxial film on these two alternate substrates by a chemical vapor deposition (CVD) method. The microstructures and defects will be studied by HRTEM and X-ray. The details will be presented in the conference.

42

16:10 - 16:30

Near Field Photothermal Printing of Gold Microstructures and Nanostructures Pei-Yu Chiou Dept. Mechanical & Aerospace Eng., University of California Los Angeles, Los Angeles, CA 90095

Metallic micro and nanostructures have wide applications in solar cell harvesting[1], plasmonic devices, color filters, and biomedical fields such as metallic particle guided gene delivery, photothermal therapy, and biosensors. Methods for fabricating metallic nanostructures are versatile, ranging from chemical synthesis, electron beam lithography, ion beam lithography, nanoimprint lithography (NIL), and laser induced dewetting processes. Here, we present a rapid laser printing technology capable of fabricating both periodic and non-periodic metallic structures using near field photothermal annealing guided by transparent phase-shifting masks. A laser pulse with uniform spatial light intensity passing through a PDMS phase-shifting mask forms a non-uniform light intensity profile at the interface of a PDMS mask and the underlying gold thin film. The laser pulses shaped by the PDMS phase-shifting mask selectively heat up and melt the gold film in areas with high light intensity. The shape evolution of the molten film is controlled by surface tension of molten gold, laser pulse energy, duration, and pulse number. Since the formation of these gold nanostructures needs only one to few laser pulses, it has the potential for rapid, low cost, and large-scale nanofabrication.

43

Invited Presentations II-B: Electronic Interconnects

14:00 - 14:20

Computer Simulations of the Deformation of Nano-twinned Copper Nasr M. Ghoniem Dept. Mechanical and Aerospace Eng., University of California Los Angeles, Los Angeles, CA 90095

Ultra-strong materials are required for many engineering applications. Increasing the strength of metals is achieved by scaling down their microstructure, and particularly, grain or laminate size. In this talk, we will first show how nano-scale multilayer metals, which are fabricated by vapor deposition techniques, can be made to be ultra-strong through confinement of dislocation motion trapped in between layers. The traditional compromise between strength and ductility will be shown to be violated in nano-twinned copper. Through multiscale modeling techniques, we present an understanding of the detailed mechanisms responsible for the limits of strength in these nano-laminate material systems. Another system of great importance in the development of interconnects in microelectronics is nano-twinned copper, synthesized by pulsed electro-deposition. In nano-twinned copper, we will show that an optimum thickness for the layer size can be achieved as a result of a competition between dislocation nucleation from layer interfaces and their ability to propagate in confined volumes. Finally, we discuss the modes of plastic deformation twinned copper in nano-pillars. The mechanisms responsible for peculiar plasticity of nano-pillars will be shown to be associated with the nucleation and spreading of twinning dislocations at twin interfaces, leading to jerky motion of the interfaces themselves in what we can globally describe as “stick-slip” dynamics. We also show that plastic deformation in twinned nano-pillars is reversible under specific geometric and loading conditions.

44

14:20 - 14:40

Nano-scaled multilayered thin film metallic glassy composites J. C. Huang*, M. C. Liu, S. Y. Guan, I. C. Lin, Y. H. Lai, and C. J. Lee Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan 804; *email: jacobc@mail.nsysu.edu.tw

Micro-pillars with a diameter of 200 to 1000 nm were fabricated from various metallic glasses using focus ion beam, and then tested in micro-compression at strain rates ranging from 10-5 to 10-1 s-1. Apparent size effect is observed, with 20-60% stress increment over the bulk specimens. This strength increase can be rationalized using the Weibull statistics for brittle materials. Such a size effect is induced not from the intrinsic deformation mechanism, as demonstrated by numerous experimental results, but simply a result of cast defects. It is thus logical to rationalize the whole picture by the Weibull statistics. Preliminary results indicated that the number of shear bands increased with the sample size and strain rates. Following this scheme, the same idea has been adopted in preparing multilayered thin film metallic glass laminated composites with various combinations of thin layers of amorphous and nanocrystalline metal film. It is found that the ductile metal film beneath the brittle amorphous film needs to be sufficiently strong in modulus and strength and needs to be deposited with sufficient thickness and the appropriate film orientation. The face-centered cubic Cu {111} film appears to be too soft, the body-centered cubic Mo {110} film behaves be too brittle, but the hexagonal close packed Zr {0001} film matches all above requirements. The shear bands initiated in the thin film metallic glass layer can be absorbed and accommodated by the nanocrystalline Zr {0001} layer via the nano-twinning mechanism. The original brittle TFMG, with the inclusion of a Zr layer beneath, can behave highly ductile with semi-uniform plastic deformation of 55%, even more ductile than most pure metals. The amorphous-crystalline interface exhibits good strain compatibility after appreciable plastic deformation. Parallel studies also reveal that the coupling of 100/100 amorphous/amorphous or amorphous/nanocrystalline multilayered composites can result in substantial improvement of the plasticity. Such mechanical responses can be ascribed to the fact that the nanolaminates can provide high-density sharp interfaces in-between two materials with distinct modulus mismatch, thus effectively inhibiting the excessive propagation of shear bands. This finding can impose great impact on the TFMG/metal multilayered nano-composites for MEMS designs.

45

14:40 - 15:00

Massive spalling in multi-component systems: from an unproven theory to confirmed mechanism

C. R. Kao Department of Materials Science and Engineering, National Taiwan University, Taipei City, Taiwan; email: crkao@ntu.edu.tw

Massive spalling of intermetallic compounds has been reported in the literature for several solder/substrate systems, including SnAgCu soldered on Ni substrate, SnZn on Cu, high-Pb PbSn on Cu, and high-Pb PbSn on Ni. A thermodynamic theory had been proposed to explain this unusual phenomenon. According to this theory, two necessary conditions must be met. The number one condition is that at least one of the reactive constituents of the solder must be present in a limited amount, and the second condition is that the soldering reaction has to be very sensitive to its concentration. With the growth of intermetallic, more and more atoms of this constituent are extracted out of the solder and incorporated into the intermetallic. As the concentration of this constituent decreases, the original intermetallic at the interface becomes a non-equilibrium phase, and the spalling of the original intermetallic occurs. For some time, this theory remained an unproven one. To verify this theory, well-designed experiments were carried out in this study. The results of this study unequivocally proved that the massive spalling reported in literature was indeed caused by a driving force of pure thermodynamics in nature.

46

15:00 - 15:20

The Nanostructure in Metal Alloys Triggered by Electrical Current Stressing Ying-Ta Chiu, Shi-Min Kuo and Kwang-Lung Lin Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan, R. O. C. Current stressing induces migration of elements and thus the formation of hillock and vacancy in the interconnect material such as solder joint. This presentation reports that the second phase of the solder alloy will recrystallize upon appropriate current stressing. The Zn-rich phase of Sn-9Zn solder transforms from equiaxial grain in the as reflowed joint to nano sheet structure upon current stressing at around 103A/cm2. The nano sheet Zn rich grains grow in accordance with the unit structure of the hexagonal Zn crystals. The recrystallization behavior also occurs in the 95Pb-5Sn alloy under current influence, which converts the Sn rich phase from equi-axial to one dimensional nanostructure. A supersaturation and recrystallization mechanism was suggested for this observation, as evidenced by in situ SEM investigation under current switching. The formation of the nano sheet Zn and one dimensional Sn nano structure in the Sn-9Zn and 95Pb-5Sn alloys, respectively, was ascribed to the competition between coherent and in/semi-coherent growth behaviors. The observations reported herewith may further suggest the possibility of producing supersaturate solid solution in a metal alloy.

47

15:50 - 16:10

Stability of nanotwinned Cu under electric current stressing

Chien-Neng Liao1*, Kuan-Chia Chen1, Wen-Wei Wu2, Hsin-Ping Chen3, Lih-Juann Chen1, K. N. Tu3 1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; 2Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan; 3Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1595, USA *email: cnliao@mx.nthu.edu.tw

Nanotwinned copper has drawn growing attention recently due to its substantially enhanced mechanical strength and negligible increase in electrical resistivity. Moreover, the presence of the triple point where a coherent twin boundary (TB) meets a grain boundary was found to retard the electromigration (EM) induced atomic diffusion along the twin-modified grain boundary in copper. The excellent mechanical and electrical properties make nanotwinned Cu a perfect candidate material for compact three-dimensional integration of microelectronic devices. To implement nanotwinned Cu in modern interconnect technology, the stability of twinning structure under thermal and electrical stressing becomes a critical consideration. In this study migration kinetics of {112} incoherent twin boundary (ITB) and {111} coherent twin boundary (CTB) in copper under electric current stressing are determined using in situ high resolution transmission electron microscopy. Two different mechanisms have been proposed to explain the distinct migration behaviors of the {112} incoherent twin boundaries under electric current stressing. We proposed that the ITB migration kinetics is controlled by nucleation rate of {112} steps at ITB/CTB junction, while the CTB migration involves the nucleation of partial dislocations at CTB/grain boundary junction. Electric current plays a role of shuffling Cu atoms at the junctions, leading to higher nucleation rates of partial dislocations than typical thermally activated process.

48

16:10 - 16:30

The Applications of Synchrotron Radiation X-ray on Electronic Packaging

Albert T. Wu*,1, N. Tamura2, H. Y. Lee3 and Y. S. Lai4; 1Department of Chemical and Materials Engineering, National Central University, Jhongli, 320 Taiwan; 2Advanced Light Source, Lawrence Berkeley National Lab, Berkeley, CA 94720 USA; 3 National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan; 4 Advanced Semiconductor Engineering, Kaohsiung 811, Taiwan; *email: atwu@ncu.edu.tw

This presentation introduces the applications of synchrotron radiation X-ray from micro- to macroscopic scale of the materials. Temperature and current induced microstructure and stress evolution cause great impact on the reliability in Pb-free electronic packaging. Synchrotron radiation x-ray possesses intense and collimated beams that allow precise measurement and in-depth understanding of materials properties. Since tin is the dominant element in Pb-free system, this talk presents the in situ observation of microstructural changes in tin thin strips under various temperatures and current densities. Direct measurement of time dependent stress evolution in tin strips was conducted; sin2

Ψmethod was introduced to acquire the effective diffusivity of tin under

electromigration. By focusing the beam to micron-size, the microdiffraction X-rays provides grain-by-grain information of tin whiskers that were grown from Pb-free surface finishes and renders insight of the growth kinetics. In the macroscopic aspect, the silicon dies experience stresses caused by the interactions from different layers of materials in a flip chip when it’s in functioning. Synchrotron radiation X-ray was used to obtain the real variations of the strain in the chips at elevated temperature despite the interferences from warpage and thermal expansion of silicon.

49

September 10, 2010

Plenary Presentations III: Materials Enabling Energy Applications 08:40 - 09:20

Designing, Measuring, and Controlling Molecular and Supramolecular Devices Paul S. Weiss California NanoSystems Institute and Department of Chemistry & Biochemistry, UCLA, Los Angeles, CA 90095, USA

We use molecular design, tailored syntheses, intermolecular interactions, and selective chemistry to direct molecules into desired positions to create nanostructures, to connect functional molecules to the outside world, and to serve as test structures for measurements of single or bundled molecules. Interactions within and between molecules can be designed, directed, measured, understood, and exploited at unprecedented scales. We examine how these interactions influence the chemistry, dynamics, structure, electronic function, and other properties. Such interactions can be used to advantage to form precise molecular assemblies, nanostructures, and patterns, and to control and to stabilize function. These nanostructures can be taken all the way down to atomic-scale precision or can be used at larger scales. We select and tailor molecules to choose the intermolecular interaction strengths and the structures formed within the film. We selectively test hypothesized mechanisms for electronic switching and driven motion by varying molecular design, chemical environment, and measurement conditions to enable or to disable functions and control of these molecules using predictive and testable means. Critical to understanding these variations has been developing the means to make tens to hundreds of thousands of independent single-molecule measurements in order to develop sufficiently significant statistical distributions, comparable to those found in ensemble-averaging measurements, while retaining the heterogeneity of the measurements. We quantitatively compare the conductances of molecule-substrate junctions. We find that the contacts and substrate play critical roles in switching. Switching of rigid, conjugated molecules is due to changes in the molecule-substrate bonds, which involves motion of the molecules and of substrate atoms. We are able to measure the coupling of the electrons of the molecules and substrate by measuring the polarizabilities of the connected functional molecules in high and low conductance states. These polarizabilities are compared to those of other families of molecules and to detailed calculations. The next step in these devices is to learn to assemble and to operate molecules together, both cooperatively and hierarchically, in analogy to biological muscles. We discuss our initial efforts in this area, in which we find both interferences and cooperativity.

50

09:20 - 10:00

Silicon Nanostructures: Fabrication, Properties and Applications Shuit-Tong Lee Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR, China; *email: apannale@cityu.edu.hk Si nanostructures in different forms (nanowires, nanodots, nanorods, nanoribbons, etc) are rationally synthesized using various methods. Si nanowires and quantum dots are shown to have unique and interesting structural, optical, electronic, chemical, and sensing properties. Si nanowire-based FETs reveal remarkable ambient effects on the transport properties, demonstrating the importance of surfaces in determining nanomaterials properties. The various unique properties enable Si nanowires arrays to have myriad exciting application potentials, e.g. in solar cell, battery, catalyst, chemical and biological sensing. Similarly, Si nanoparticles are shown to possess unique properties leading to promising applications in catalysts and bioimaging.

51

10:00 - 10:40

Molecular Design, Self-Assembly, and Interface Engineering for High-Performance Organic Thin Film Transistors and Photovoltaic Cells Alex K-Y. Jen Department of Materials Science and Engineering and Institute of Advanced Materials and Technology, University of Washington, Seattle, WA 98195-2120 *email: ajen@u.washington.edu

Organic semiconductor-based active materials have been explored for a wide array of applications such as flat panel displays, solid-state lighting, electronic circuits, and solar cells. The diversity in the molecular design, synthesis, and processing of these organic solids has empowered scientists to fine-tune their material structures, morphologies, and physical properties for opto-electronic applications. In this talk, we will discuss the use of material design, self-assembly, and interface engineering to significantly improve the performance of organic semiconductors for field effect transistors and photovoltaic cells. The performance of these optoelectronic devices are strongly dependent on the efficiency of charge injection and collection at the metal/organic, metal/metal oxide, and organic/metal oxide interface, charge transport, as well as charge recombination or dissociation within the active materials. To improve these important parameters, two parallel approaches were used: 1) developing novel conjugated polymers and charge-transporting materials and 2) modifying the interfaces between the organic and anode/cathode layers with neutral surfactants and functional self-assembling monolayers (SAMs) to tune their energy barriers. Moreover, the molecule engineering approach was also used to tune the energy level, charge mobility, and morphology of organic semiconductors.

52

11:00 - 11:40

Three-dimensional battery architectures for micropower applications Bruce Dunn Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095, USA

Three-dimensional battery architectures offer a new approach for miniaturized power sources. The defining characteristic of 3-D battery designs is that transport between electrodes remains one-dimensional at the microscopic level, while the electrodes are configured in complex, non-planar geometries. Micromachining methods are used to fabricate the electrode arrays that serve as the central design element for these architectures. One of the most attractive advantages of 3-D batteries is the prospect of achieving high energy and power density within a small footprint area. These features are particularly important for integrated microsystems where the available area for the power source is limited to millimeter dimensions. This presentation will review our progress in developing 3-D battery technology and the challenges that remain.

53

11:40 - 12:20

Progress in Development of New Semiconducting Polymers for Highly Efficient Organic Solar Cells Luping Yu Department of Chemistry, The University of Chicago, 929 57th St., Chicago, IL 60637; *email: lupingyu@uchicago.edu

This presentation discusses recent progress in our group in developing a series of new polymers that exhibit exceptional power conversion efficiency. These polymers are designed to possess low band gap to most effectively harvest solar energy. The quinoidal structures give these polymers high rigidity and relatively high charge carrier　 mobility. A detailed structural variation led us to discover several polymers that exhibit power conversion efficiency close to 7.9%. These are the best results obtained so far for single-layer polymer solar cells. Structure/property correlations will be discussed.

54

Invited Presentations III-A: Organic Photovoltaics 14:00 - 14:20

Optimizing bulk and nanoscale architecture for improved performance in semiconducting polymer based photovoltaics Christopher Tassone, Alexander L. Ayzner, E. Joe Nemanick, Bertrand de Villers, Stephanie Doan, Chenjun Shi, Yves Rubin, Benjamin J. Schwartz, and Sarah H. Tolbert; Department of Chemistry and Biochemistry, UCLA, Los Angeles, CA 90095-1569

Semiconducting polymer based photovoltaics are a growing area of solar energy research. The most efficient organic solar cells produced to date are bulk heterojunction (BHJ) photovoltaic devices based on blends of semiconducting polymers such as poly(3-hexylthiophene-2,5-diyl) (P3HT) with fullerene derivatives such as [6,6]-penyl-C61-butyric-acid-methyl-ester (PCBM). The need for blending the two components is based on the idea that the exciton diffusion length in polymers like P3HT is only ~10 nm, so that the polymer and fullerene components must be mixed on this length scale to efficiently split the excitons into charge carriers. In addition to PCBM, a variety of other acceptor, including a range of inorganic oxides, are also being examined. In this talk, we will explore a number of issues related to polymer photovoltaics. We begin with results that show how nano-scale organization of the semiconducting polymers can be used to improve carrier mobility in these organic semiconductors for use in bulk heterjunction photovoltaics. We then explore how surface modification can be used to increase efficiency in polymer based solar cells that replace the fullerene electron acceptor with nanostructured titania. Finally, we reevaluate the need for a blended donor/acceptor morphology by examining how bilayer photovoltaics can be produced with efficiencies comparable to those of blended BHJs. In all cases, our goal is to relate fundamental processes such as charge transfer, energy transfer, and charge mobility with nanoscale architecture and interfacial structure by systematically examining both structure and function in these semiconducting polymer based photovoltaics.

55

14:20 - 14:40

Conjugated Polymer/nanoparticle Nanocomposites for Optoelectronic Applications Kung-Hwa Wei*, Chia-Hung Chou, Yao-Te Chang, and Mao-Yuan Chiu Department of materials science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, 30049 *email: khwei@mail.nctu.edu.tw

In this talk, I will present to you on various ways for binding colloidal nanoparticles to conjugated polymers for forming thin films for optoelectronic devices’ application such as in light emitting diode or photovoltaic devices. Conjugated polymers and colloidal nanoparticles can be designed through altering molecular structure and using different ligands, respectively, for undergoing solution processing routes to fabricating large-area or flexible thin films for device applications. Two kinds of cases will be discussed; the first kind involves using the steric hindrance of oxide or metal nanoparticles that were covalently bounded to the side chain of polyfluorene or MEH-poly(phenylenevinylene) or adopting pi-pi stacking for binding CdS nanoparticles to polyfluorene for reducing the formation of excimers and thereby enhancing the efficiency or color purity of polymer light emitting diode; the second kind of cases is concerned with bulk heterojunction solar cells, in which a electron withdrawing conjugated species was tethered to the side chain of polythiophene for enhancing charge transfer and binding with fullerene derivatives. This approach results in more balanced electron and hole mobility and the power conversion efficiency of the device as well.

56

14:40-15:00

New fullerene derivatives for the application as acceptor materials in polymer solar cells Yongfang Li CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China *email: liyf@iccas.ac.cn

In the presentation, I will report our recent progress on the synthesis of novel fullerene derivatives with better solubility, stronger visible absorption and higher LUMO energy level. The fullerene derivatives we synthesized include PCBM-like C60 derivatives with different alkyl chain length in the substituent group of PCBM, indene-C60 bisadduct (ICBA), and other C60 and C70 derivatives. ICBA shows a higher LUMO (by 0.17 eV) than that of PCBM. The PSC with P3HT as donor and ICBA as acceptor displays a higher Voc of 0.84 V and higher power conversion efficiency (PCE) of 5.44% under the illumination of AM1.5, 100 mW/cm2, while the PSC based on P3HT:PCBM shows Voc of 0.58 V and PCE of 3.88% under the same experimental conditions.

57

15:00 - 15:20

Highly Flexible Polymer Light Emitting Devices Qibing Pei Department of Materials Science and Engineering; University of California, Los Angeles

Polymer light emitting devices based on in-situ formation of a p-i-n junction in a polymer blend have been fabricated by roll lamination. Single-walled carbon nanotubes are used as both the anode and cathode for the vacuum-free fabrication process. The thin film devices exhibit a low turn-on voltage, modestly high efficiency and brightness. The devices are fairly transparent and exhibit very high mechanical flexibility. When stretchable polymer substrates are used, the devices may be stretched by as much as 50%.

58

15:50 - 16:10

Coating and Fabrication of High Efficiency Polymer Solar Cell Modules Gang Li Solarmer Energy Inc. El Monte, California, USA

Organic solar cell (OSC) has attracted significant attention both in academic institutes and companies in the past half decade. The power conversion efficiency of both small molecule and polymer based OSC has improved significantly to certified values of above 6% PCE. While small molecule OSC is easier to realize complicated device structure like tandem to achieve high efficiency, simple processing of polymer based bulk heterojunction OSC has leads to certified 7.9% efficiency at cell level. To truly realize the economical potential of polymer solar cell, large scale, low cost, low energy consumption fabrication process is a must. In this talk, we will discuss the coating issues of polymer solar cell and presenting results on both classical poly(3-hexyl thiophene) and new generation of polymer for high efficiency polymer solar cell. By optimizing the coating condition and device fabrication process, we have successfully achieved polymer solar cell panel with over 200 cm2 area. Panel power conversion efficiency of close to 4% has been demonstrated, representing the state of art of polymer solar cell technology. Estimation from the area utilization leads to active area efficiency close to 5%. These results clearly show the potential of this technology. Discussions on further improvement of polymer solar cell panel will also be presented.

59

16:10-16:30

Morphology control in organic/inorganic hybrid materials for photovoltaic application Hongzheng Chen Department of Polymer Science & Engineering, Zhejiang University, Hangzhou 310027, China. *email: hzchen@zju.edu.cn

Organic-inorganic hybrid photovoltaic (PV) cells have attracted a great interest as one potential alternative type for silicon solar cells in developing the low-cost, large-area, mechanically flexible solar cells, which can potentially resolve the world’s energy crisis. The morphology control and the charge transport are very important in the organic-inorganic hybrid PV cells based on the donor-acceptor heterojunction structure. The presentation will focus on the fabrication of hybrid organic/inorganic PV cells with ordered nanostructures. The relationship between the morphologies and the PV properties of the hybrid PV cells is investigated. The power efficiency can be improved by one order of magnitude after the modification of inorganic surface.

60

16:30 - 16:50

The magneto conductance responses and the optically-induced dielectrophoretic properties of polymer bulk-heterojunction photovoltaic devices Tzung-Fang Guo*, Tsung-Hsun Lee, J. C. A. Huang, Bin Hu, Gwo-Bin Lee, and Ten-Chin Wen Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 701 *email: guotf@mail.ncku.edu.tw

The first part of presentation reports the studies of the magneto conductance (MC) responses of regioregular poly(3-hexylthiophene) (P3HT)-based polymer photovoltaic devices, which are made of intrinsically non-

magnetic components. [Lee et al., Org. Electron. 11, 677 (2010) and Appl. Phys. Lett. 92, 153303 (2008)] The positive MC effect is due to the increased population of the singlet polaron-pair (PP) states (of the high dissociation rate to charge carriers) under the magnetic field. The negative MC effect results from the decline on the triplet exciton-charge reactions to charge carriers (the mobility and concentration of triplet excitons are decreased by the magnetic field). The MC responses of P3HT-based photovoltaic devices can be manipulated by the applied magnetic field, the electrical bias, the built-in potential, and the interfacial dipole layer. In addition, blending of an electron acceptor material, [6,6]-phenyl C61-butyric acid methyl ester (PCBM), in P3HT active layer quenches the photo-excited states at the donor-acceptor interface and results in distinct MC responses of photovoltaic cells, which probably are related to the features indicating the formation of intermolecular charge-transfer complexes at donor-acceptor junction. This second part of presentation reports a novel approach for selective manipulation of microparticles using

polymer-based optically-induced dielectrophoretic (ODEP) devices. [Wang et al., Opt. Express 16, 1760 (2009) and Appl. Phys. Lett. 96, 113302 (2010)] A thin film of a bulk-heterojunction (BHJ) polymer (a mixture of P3HT and PCBM) is used as a light active layer. The ODEP force is generated by “virtual” electrodes (the optical images) created from a computer-programmable projector to manipulate polystyrene particles. A non-contact approach is then demonstrated to separate or collect the polymer particles by shrinking one of the two light rings

with different colors and diameters. The maximum particle drag velocity and the force applied on 20.0 μm diameter polystyrene beads are measured to be 202.2 μm/s and 38.2 pN, respectively, for a device with a 497.3-nm thick BHJ layer. The lifetime ~5 hours of the device is sufficient for applications of disposable and cost-effective ODEP devices.

61

Invited Presentations III-B: Nano-materials in Electronics 14:00 - 14:20

Synthesis and Properties of Ge and Ge/Si Heterostructured Nanowires S. Tom Picraux, Shadi A. Dayeh, and J. Greg Swadener Center for Integrated Nanotechnologies, Los Alamos National Laboratory; Los Alamos, NM 87545 Semiconducting nanowires promise a wide variety of potential applications, including novel electronic and energy harvesting devices. Vapor-liquid-solid (VLS) nanowire growth enables unique semiconducting structures with a significant range of control over, size, composition and electrical doping.1 At small diameters both nanowire materials growth and properties are affected. Results for Ge size-dependent growth rates and the resulting thermodynamically-limited minimum diameters achievable will be discussed. A unique aspect of the VLS growth is the formation of axial and radial (core/shell) heterogeneous structures which can’t be easily obtained by conventional 2D strained layer growth. We will discuss recent results for Ge and Ge/Si axial and core/shell heterostructured nanowires. Due to a lack of lateral confinement, large strains can be incorporated into the structures. These highly strained structures are modeled by molecular dynamics simulations and provide a new approach to band structure engineering. We will also discuss transport studies, including new results for high performance FET and tunneling FET devices. 1 Silicon and Germanium Nanowires: Growth, Properties and Integration (Invited Overview), S. T. Picraux, S. Dayeh, P. Manandhar D. E. Perea and S. G. Choi, JOM, 62, (4) 35 (2010).

62

14:20 - 14:40

Nano-electronics of high κ dielectrics on InGaAs and Ge for science and technology beyond Si CMOS

Minghwei Honga and J. Raynien Kwob; a Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan; b Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan, and Department of Physics, National Tsing Hua University, Hsinchu, Taiwan

The dimensional scaling in the transistors, which in the past has simultaneously provided high-density, low-cost, and high-performance ICs in Si-based system, does not give device performance advantages. New materials of high κ dielectrics and high carrier mobility channel materials, along with novel device architectures are beginning to play important roles for improving the required performance. Looking ahead beyond the 16 nm node ICs, the general consensus is that new high mobility channels such as III-V’s (InGaAs) and Ge will have to be integrated onto Si as “hybrid” chips for future devices; this may occur in 2017-2020. The intensive quest since early 1960’s in identifying electrically and thermodynamically stable insulators on InGaAs with a low interfacial density of states (Dit) and low leakage current densities, required for the self-aligned inversion-channel InGaAs MOSFET, has finally been answered by our discovery of UHV-deposited Ga2O3 (Gd2O3) [1] and Gd2O3 [2] films on GaAs surfaces, and later by atomic layer deposited (ALD) oxides. The first inversion-channel GaAs and InGaAs MOSFETs were demonstrated with Ga2O3(Gd2O3) as a gate dielectric. With these achievements, the problem puzzling the researchers for the past 35 years has finally been solved. Moreover, the discovery has opened up an entirely new field for the IC industry – III-V MOSFET.

We have successfully extended high κ dielectric growth using MBE to that using ALD, on the III-V’s and Ge. Furthermore, we have achieved world-record device performance in self-aligned inversion-channel InGaAs MOSFET, much more superior than those of Si devices in the same gate length, [3,4] as well as a CET of ≤ 1 nm and high-temperature thermal stability withstanding 850°C RTA in Ga2O3(Gd2O3) and a CET of ≤ 1 nm in ALD-HfO2 on InGaAs. [5,6] In-situ XPS analysis was used to determine the energy-band parameters at interfaces of high κ oxides on InGaAs, and showed that absence of arsenic oxide and elemental arsenic was a principal mechanism responsible for Fermi level unpinning at the dielectric oxide/GaAs interface, thereby leading to effective passivation of the InGaAs surfaces. [7, 8] Self-aligned, inversion-channel Ge MOSFET using MBE-Ga2O3(Gd2O3) without any interfacial layers have shown remarkable device performances. [9] [1] M. Hong, J. Kwo, et al, J. Vac. Sci. Technol.B 14, 2297 (1996). [2] M. Hong, J. Kwo, A. R. Kortan, et al, Science, 283, 1897 (1999). [3] T. D. Lin, M. Hong, J. Kwo, et al, Appl. Phys. Lett. 93, 033516 (2008). [4] H. C. Chiu, M. Hong, J. Kwo, et al, Device Research Conf. (2009). [5] K. H. Shiu, M. Hong, J. Kwo, et al, Appl. Phys. Lett. 92, 172904 (2008). [6] K. Y. Lee, M. Hong, J. Kwo, et al, Appl. Phys. Lett. 92, 252908 (2008). [7] M. L. Huang, J. Kwo, M. Hong, et al, Appl. Phys. Lett. 89, 012903, (2006). [8] M. L. Huang, J. Kwo, M. Hong, et al, Appl. Phys. Lett. 87, 252104 (2005) [9] L. K. Chu, T. D. Lin, J. Kwo, and M. Hong, et al, Appl. Phys. Lett. 94, 202108 (2009).

63

14:40 - 15:00

Growth of III-V High mobility transistor structure on Si Substrate using SiGe Buffer for low power logic device application Edward Yi Chang*, Chien-I Kuo, Yueh-Chin Lin, and Yen-Chang Hsieh Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.; *email: edc@mail.nctu.edu.tw

Recently, Field Effect Transistors (FETs) with III-V high-mobility InxGa1-xAs as channel materials have received much attention due to their promising characteristics as switching devices for beyond post-CMOS digital technology applications. In addition, low supply voltages (VCC) while maintaining device or circuit performances are the effective path in decreasing dc power consumption. In fact, indium arsenic material with electron mobility as high as 40,000 cm2/Vs at room temperature, low electron effective mass and a reasonable energy bandgap of 0.36 eV, is very attractive as channel layer of Quantum Well FETs (QWFETs) for potential future ultrahigh-speed and low-power logic applications. However, III-V material systems need to be integrated on larger diameter (12 inch or larger) silicon substrate to reduce manufacturing cost and also realize the ultimate vision to extend Moor’s law into next decade. In this talk, growth of high-quality compound semiconductor-based devices on the Si substrate using SixGe1-x buffer layer will be demonstrated for high-speed nano-electronics applications. A thin thickness of 0.45 μm SixGe1-x metamorphic buffer layer on a Si substrate was achieved by using a heavy dose Si+ pre-ion-implantation technique and two steps SiGe buffer layer growth. The crystalline quality of the HEMT structure grown on Si was analyzed by XRD, TEM, and AFM. Room-temperature hall mobility measurements of Al0.5Ga0.5Sb/InAs HEMT structure grown on the Si substrate demonstrated an electron charge density of 3.04 × 1012 cm-2 and a mobility of 27,300 cm2/Vs due to the high-quality epitaxial layers grown. This is the highest mobility for a HEMT structure grown on Si substrate reported so far. The detailed information of the growth process will be presented in the symposium.

64

15:00 - 15:20

Next-generation Non-volatile Memories

Fred Chen, Yung-Hung Wang, Ming-Jer Kao Electronics & Optoelectronics Research Laboratories (EOL)/Industrial Technology Research Institute (ITRI), Taiwan; Address: 0F100, EOL/ITRI, Bldg. 51, 195, Sec. 4, Chung-Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.; *email:mjkao@itri.org.tw

Recently, Next-generation non-volatile memories (NVM) continue to receive great attention due to its scalability, rapid read and write performance, simple structure, and easy incorporation with CMOS process. There are many candidates for ideal non-volatile memory, such as Magnetro-resistive RAM (MRAM), Phase change RAM (PCRAM), and Resistive RAM (RRAM). This paper will introduce the current results and future directions of ITRI’s NVM program. A very high speed switching (5ns) and ultra low power operation (25uA) can be achieved in our HfOx based RRAM technology.

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15:50-16:10

Challenges in the Synthesis and Integration of Multifunctional Complex Oxide Materials Jane P. Chang Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095

The demand of engineering metal oxide thin films at an atomic level has grown immensely due to their versatile applications in numerous technologically advanced fields including microelectronics, optoelectronics, photonics, spintronics, energy storage devices and sensors. In this talk, I will discuss current research advances in atomic layer deposition for synthesizing multicomponent and multifunction metal oxides with tailored electronic, chemical, interfacial, thermal properties and microstructures. Specifically, I will highlight our most recent research on the engineering of oxide thin films and their patterning, for their applications in high speed electronics, optoelectronics and energy storage devices.

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16:10 - 16:30

Nanostructures for antireflection and their applications

J. H. He Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, 106 Taiwan; *email: jhhe@cc.ee.ntu.edu.tw It is of current interest to develop the antireflection (AR) coatings with nanowire arrays (NWAs) since the ability to suppress the reflection over a broad range of wavelengths and incident angles plays an important role in the performance of optoelectronic devices, such as photodetectors, light-emitting diodes, optical components, or photovoltaic systems. Superior AR characteristics of NWAs, including polarization-insensitivity, omnidirectionality, and broadband working ranges are demonstrated in this study. These advantages are mainly attributed to the subwavelength dimensions of the NWAs, which make the nanostructures behave like an effective homogeneous medium with continuous gradient of refraction index, significantly reducing the reflection through destructive interferences. The relation between the geometrical configurations of NWAs and the AR characteristics is discussed. This study paves the way to optimize the nanostructured optoelectronic devices with efficient light management by controlling structure profile of nanostructures.

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16:30 - 16:50

Resistance Switching Behavior in Nano-structured Thin Films Jen-Sue Chen*, Yu-Lung Chung, Yung-Sung Lin, and Pei Ying Lai Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan *email: jenschen@mail.ncku.edu.tw Non-volatile memory devices have progressively played an important role in the semiconductor industry because the fast development of digitized video-audio media. Among the varieties of memory devices, nonvolatile resistance random access memory (RRAM) have attracted much attention because of its simple structure, high density and possibility of achieving multilevel memory states. The resistive switching in metal-insulator-metal (MIM) structures can be altered reversibly and reproducibly by the application of a voltage. Programmable electrical bistability has been observed for a wide variety of insulator materials, such as transition metal oxides, chalcogenide glasses, perovskites, and polymers.

In this work, resistance switching performances are demonstrated in transition metal oxides, TiOx and NiO, films containing nano-scale metal nanoparticels or intermediate metal layers. TiOx-based devices exhibit unipolar switching behavior a rectifying character. On the other hand, NiO-based devices show non-polar switching performance. Conduction and switching mechanisms of the TiOx-based devices can be correlated with their defect states as well as metal-semiconductor contact characteristics. In contrast, switching mechanism of the NiO-based devices depends simply on the formation and rupture of conduction filament, which is associated with the gathering of defects in the NiO film.

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Posters: September 8-10 16:30 - 16:50

Observations on the Melting of Au Nanoparticle Deposits and Alloying with Ni via In situ Synchrotron Radiation X-ray Diffraction Tzu-Hsuan Kao1, Jenn-Ming Song2, In-Gann Chen1, *, Teng-Yuan Dong3 and Weng-Sing Hwang1, Hsin-Yi Lee4 1.Department of Materials Science and Engineering, Frontier Material and Micro/Nano Science and Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan. 2. Department of Materials Science and Engineering, National Dong Hwa University, Hualien, Taiwan. 3. Department of Chemistry, National Sun Yat-Sen University, Kaohsiung, Taiwan. 4. National Synchrotron Radiation Research Center, Hsinchu, Taiwan. *email: ingann@ncku.edu.tw Self-formed TaOx/Si(Ta)Ox dielectrics at the Ru-Ta-N/Si interface Chun-Wei Chen1, Jen-Sue Chen1, *, and Jiann-Shing Jeng2 1 Department of Materials Science and Engineering National Cheng Kung University, Tainan, Taiwan. 2 Department of Materials Science and Engineering Far East University, Tainan county, Taiwan *e-mail: jenschen@mail.ncku.edu.tw

N-type pentacene-based organic field-effect transistors by modulating the polymer gate dielectrics and source-drain electrodes Tzung-Fang Guo1, *, Jer-Wei Chang1, Wei-Lieh Hsu1, Chang-Yo Wu1, and Ten-Chin Wen2 1Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 7012Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan 701 *email: guotf@mail.ncku.edu.tw

III-nitride nanostructures grown by molecular beam epitaxy Chuan-Pu Liu*, Kuang-Yuan Hsu Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan *email: cpliu@mail.ncku.edu.tw

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Growth of Thick AlGaN/GaN HEMTs Structure on 4” Patterned Si Substrate for High Breakdown Voltage Power Electronic Applications Yu-Lin Hsiao, Jung-Chi Lu, Chien-I Kuo, Tien-Tung Luong, Kung-Liang Lin, and Edward Yi Chang*; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan; *email: edc@mail.nctu.edu.tw

Evaluation of InAs-based HEMTs for Future Energy-Efficient and Logic Applications Chien-I Kuo1, Heng-Tung Hsu2, Chin-Te Wang1, and Edward Yi Chang1,*; 1Department of Materials Science and Engineering, National Chiao Tung University Hsinchu, Taiwan, R.O.C. 2Department of Communications Engineering, Yuan Ze University, Chung Li, Taiwan, R.O.C. *email: edc@mail.nctu.edu.tw

Fabrication and characteristics of TiO2 nanotube arrays by atomic layer deposition Yung-Huang Chang1, Hsyi-En Cheng2, and Chih Chen1 1. Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China. 2. Department of Electro-Optical engineering, Southern Taiwan University, Tainan 710, Taiwan, Republic of China; *email: chih@mail.nctu.edu.tw

Fabrication and characteristics of nanotube arrays of tungsten oxide by anodic Oxidation Chia-Ling Lu, Yung-Huang Chang, Shih-Hung Lee, and Chih Chen*

Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, 30010 Taiwan

(ROC);

*E-mail: chih@mail.nctu.edu.tw

Metallurgical reaction in microbumps for 3-D IC packing Ruo-Wei Yang, and Chih Chen* Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China *email: chih@mail.nctu.edu.tw

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In situ electrochemical doping enhances the efficiency of polymer photovoltaic devices Ming-Shin Su, Hai-Ching Su, Yi-Ren Zhou, and Kung-Hwa Wei* [*] Prof. K. H. Wei, M. S. Su, and Y. R. Zhou, Department of Materials Science and Engineering National Chiao Tung University 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, ROC; E-mail: khwei@mail.nctu.edu.tw; Prof. H. C. Su, Institute of Lighting and Energy Photonics National Chiao Tung University Tainan 71150 (Taiwan)

Nonpolar a-plane ZnO growth and nucleation mechanism on (100) (La, Sr)(Al, Ta)O3 substrate Mitch M.C. Chou*, Chenlong Chen, Shih Chuan Wang, Chun-Yu Lee Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan *email: mitch@faculty.nsysu.edu.tw

A novel method to synthesize a large area of single crystalline LiAl5O8 nanorods Mitch M.C. Chou* Cheng Chien, Hsu, Chun-Yu Lee, Chenlong Chen Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan *email: mitch@faculty.nsysu.edu.tw

Time-dependent mechanical behavior in amorphous Zr45Cu27Ti15Ta13 and nanocrystalline Ag thin films J. C. Huang1*, H. S. Chou1, C. J. Lee1, C. L. Wang2, T. G. Nieh2 1 Department of Materials and Optoelectronic Science; Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 804, RO China, 2Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996, USA *Corresponding author. Tel.: +886 7 5252000 ext 4063; fax: +886 7 5254099. E-mail address: jacobc@mail.nsysu.edu.tw (J.C. Huang)

Characteristic difference between ITO/ZrCu and ITO/Ag bi-layer films as transparent electrodes deposited on PET substrate C. J. Lee a, H. K. Lin b*, S. Y. Sun a, and J. C. Huang a a Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun

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Yat-Sen University, Kaohsiung 804, Taiwan, ROC, b Laser Application Technology Center/ Industrial Technology Research Institute South (ITRI South), 8, Gongyan Rd., Liujia Shiang, Tainan County, Taiwan 734, ROC *email: chingjen@staff.nsysu.edu.tw

Mechanical properties of Zr-based and Pd-based thin film metallic glasses in micro-tension test H. J. Pei, C. J. Lee, and J. C. Huang * Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC *email: jacobc@faculty.nsysu.edu.tw

Ordered Mesoporous Silicas with Large Regulable Pores Templated from Amphiphilic Diblock Copolymer Poly(ethylene oxide)-b-poly(ε-caprolactone) Jheng-Guang Li, Yu-De Lin, Yen-Hsiang Chang and Shiao-Wei Kuo* Department of Material and Optoelectronic Science ,National Sun Yat-Sen University, Kaohsiung, Taiwan *Corresponding author：No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, R.O.C. e-mail：kuosw@faculty.nsysu.edu.tw

Formation of nanoscale twins in Cu films with controllable orientations by electrodeposition Tsung-Cheng Chan, Yu-Lun Chueh*, and Chien-Neng Liao* Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan *email: ylchueh@mx.nthu.edu.tw, cnliao@mx.nthu.edu.tw

Pulsed electrodeposition of copper nanowires using anodic aluminum oxide (AAO) templates Yen-Miao Lin, Tsung-Cheng Chan, Yu-Lun Chueh, and Chien-Neng Liao* Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan *email: cnliao@mx.nthu.edu.tw

Ultraviolet and White-light Electroluminescence from n-ZnO/p-GaN Heterojunction Light-Emitting Diodes Grown by Atomic layer Deposition Miin-Jang Chen, Hsing-Chao Chen, and Jer-Ren Yang

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Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China *email: mjchen@ntu.edu.tw

ZnO homojunction light-emitting diodes grown by atomic layer deposition on amorphous silica substrates Miin-Jang Chen* and Ying-Tsang Shih Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China *email: mjchen@ntu.edu.tw

Efficiency Enhancement of Silicon Solar Cell Using ZnO Nanorod Arrays as Antireflection Coatings Chin-An Lin, and Jr-Hau He* Graduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, 10617 Taiwan (ROC) *email: jhhe@ntu.edu.tw; jhhe@cc.ee.ntu.edu.tw

Effect of Indium Fluctuation on the Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells K. Y. Lai,1 G. J. Lin,1 Y.-L. Lai,2 Y. F. Chen,3 and J. H. He1,4,a) 1Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan, 2Genesis Photonics Inc., Tainan Hsien 74144, Taiwan, 3Department of Physics, National Taiwan University, Taipei 10617, Taiwan, 4Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan; *email: jhhe@cc.ee.ntu.edu.tw

Massive spalling of intermetallics in flip-chip solder W. M. Chen, S. C. Yang, M. H. Tsai, and C. R. Kao* Department of Materials Science and Engineering, National Taiwan University, Taipei City, Taiwan 106, *email: crkao@ntu.edu.tw

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Discussion on the Two Competing Degradation Mechanisms and Interfacial Morphology in Flip Chip Solder Joints under High Current Density with Temperature Control T. L. Yang, J. H. Ke, Y. W. Lin, and C. R. Kao* Department of Materials Science and Engineering, National Taiwan University, Taipei City, Taiwan 106; *email: crkao@ntu.edu.tw

Detection of Spin Polarized Carrier in Silicon Nanowires with Single Crystal MnSi Contacts Yung-Chen Lin, Yu Huang Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures and Nanodevices Yu Chen, Yu Huang Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

In situ Low-Energy Electron Microscopy Studies of Graphene Growth on Pd (111) Y. Murata1, E. Starodub2, N.C. Bartelt2, K.F. McCarty2, and S. Kodambaka1

1Dept. Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA 2Sandia National Laboratories, Livermore, CA 94550

Structure and Properties of Grain Boundary in Cu Affected by Nano-twins Di Xu, Luhua Xu, Vinay Sriram, Jenn-Ming Yang, and K. N. Tu Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Microstructure stability of nanotwin in copper under electromigration Hsin-Ping Chen1*, Chun-Wen Wang2, Wen-Wei Wu2, Chien-Neng Liao3, Lih-Juann Chen3, King-Ning Tu1 1Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA 2Dept. of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan 3Dept. of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan *email: hpchen@ucla.edu

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Thermomigration of Al in flip-chip solder joints Hsiao-Yun Chen, Han-Wen Lin, Yuan-Wei Chang, Jeam-Min Liu and Chih Chen* Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan *email: chih@faculty.nctu.edu.tw

Fully Bendable Polymer LEDs Zhibin Yu, Qibing Pei Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Inorganic-Polymer Nanocomposites for Gamma Scintillation Chi Chen, Qibing Pei Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Single Walled Carbon Nanotubes for Fault-tolerant, Large-Strain Actuation Paul Brochu, Qibing Pei Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Tailoring the Thermal Expansion of Metal Matrix Composites via a Negative Expansion Material Joy E. Trujillo, Jong Woung (Jason) Kim, Kurt E. Star, Esther Lan, Bruce Dunn Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Bio-Assisted Assembly of Cobalt Nanoparticles into Device Architectures Hyun-Cheol Lee, Jing C. Zhou, Bruce S. Dunn Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Chemical-Mechanical Polishing For III-V Wafer Bonding Applications: Polishing, Roughness, And An Abrasive-Free Polishing Model S. J. Brightup, M. S. Goorsky Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

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Sulfur Treatments for Direct Wafer Bonding of III-V Materials M. Jackson, B. Jackson & M.S. Goorsky Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Lattice strain in hydrogen implanted semiconductor materials C. Ventosa-Moulet, S. L. Hayashi, M. S. Goorsky Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Polymer solar cells by airbrush spray deposition Renée Green, Yang Yang Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Resistive switching in polymer memory device caused by locally enhanced electric field Wei Lek Kwan, Bao Lei, Yue Shao, Yang Yang Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA

Dipole induced anomalous S-shape I-V curves in polymer solar cells Ankit Kumar, Srinivas Sista, Yang Yang Dept. of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA