jeff hanna nanoscale electronics 4.23 - rowan university
TRANSCRIPT
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Jeff HannaNanoscale Electronics
4.23.09
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Gameplan•Why is memory important?•Background of MRAM•Basic Elementsof MRAM•Fabrication •Comparison•Applications•Current Value of Market
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! Early MRAMs – anisotropic magnetoresistance" B is mag field, when off current
flows between rims" When on, the resistance between
rims goes up
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! Giant Magnetoresistance" Triggered the new field of
electronics called spintronics
! Demohttp://www.research.ibm.
com/research/demos/gmr/1.swf
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! Conventional MRAM" Single step write op" Substaintial current
needed" Overlapping fields occur
when scaling below 180nm
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! Togglemode MRAM" Utilizes multistep writing" Can be scaled much smaller" Less power needed
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! 1 transistor 1 magnetic tunnel junction (1T1MTJ)
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! Read: V applied to BL relative to SL. Current flows through MTJ. Sense amplifier decides “1” or ‘0”
! Write: “0” +V applied to SL and BL and vice versa when writing “1”
Note: The smaller the MTJ is or the longer the writing pulse is applied, the less critical switching current is needed
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! Magnetic Tunnel Junction (MTJ) is storage element
! Tunnel magnetoresistance (TMR) defined by:" !R/R = (RAP !"#$")%#$
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! Aerospace and military systems! Digital cameras! Notebooks! Smart cards! Mobile telephones! Cellular base stations! Personal Computers! Battery-Backed SRAM replacement! Datalogging specialty memories
(black box solutions)! Media players! Book readers
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! Memory is important! MRAM has evolved past R&D! MTJ provide low power nonvolatile memory ! Fabrication is similar to current techniques! MRAM is comparable to become universal
memory! The memory market is estimated to sky rocket
and MRAM could grab a majority of market share