jing guo department of ece, university of florida gainesville, fl, … · 2005. 8. 21. · device...
TRANSCRIPT
![Page 1: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/1.jpg)
Dev
ice
Sim
ulat
ion
for
Car
bon
Nan
otub
e El
ectr
onic
sJi
ng G
uo
Dep
artm
ent o
f EC
E, U
nive
rsity
of F
lorid
aG
aine
svill
e, F
L, 3
2611
1.In
trodu
ctio
n2.
NE
GF
form
alis
m3.
Sim
ulat
ion
App
roac
h4.
Dev
ice
Ana
lysi
s5.
Sum
mar
y
![Page 2: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/2.jpg)
2
Ack
now
ledg
emen
ts
Theo
ry: M
ark
Lund
stro
m, S
upriy
o D
atta
(Pur
due)
Exp
erim
ent:
Hon
gjie
Dai
, Ali
Jave
y(S
tanf
ord)
![Page 3: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/3.jpg)
3
)nm(
8.0d
eVE G
≈
()
()2 2
31
2kd
Ek
EG
+
±=
McE
uen,
Fuh
rer,
Par
k, IE
EE
Tra
ns. N
anot
ech.
, 1, 7
8, 2
002.
Car
bon
nano
tube
s
(see
als
o: R
. Sai
to, G
. Dre
ssel
haus
, and
M.S
. Dre
ssel
haus
, Phy
sica
l Pro
perti
es
of C
arbo
n N
anot
ubes
, Im
peria
l Col
lege
Pre
ss, L
ondo
n, 1
998.
)
![Page 4: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/4.jpg)
4
Top-
dow
n an
d bo
ttom
-up
view
Gat
e
atom
istic
pZ
orbi
tals
Qua
ntum
app
roac
h-t
unne
ling
at M
/CN
T co
ntac
ts
-tun
nelin
g an
d in
terfe
renc
e in
th
e C
NT
Bot
tom
-up
view
Gat
e
Top-
dow
n vi
ew
DS
E
kmob
ility
Sem
icla
ssic
al a
ppro
ach
appl
icab
le o
nly
whe
n qu
antu
m
effe
cts
not i
mpo
rtant
![Page 5: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/5.jpg)
5
gate
ele
ctro
de
sour
ceco
ntac
tV
= 0
Cha
lleng
es in
nano
scal
ede
vice
sim
ulat
ion:
1)de
scrip
tion
at a
n at
omis
tic le
vel
2)qu
antu
m d
escr
iptio
n of
ope
n sy
stem
s un
der b
ias
3)tre
atm
ent o
f ine
last
ic s
catte
ring
Qua
ntum
sim
ulat
ion
forN
anoe
lect
roni
cs
drai
nco
ntac
tV
> 0
Nan
osca
lede
vice
Our
app
roac
h: t
he G
reen
’s fu
nctio
n fo
rmal
ism
![Page 6: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/6.jpg)
6
1.In
trodu
ctio
n2.
NE
GF
form
alis
m3.
Sim
ulat
ion
App
roac
h4.
Dev
ice
Ana
lysi
s5.
Sum
mar
y
Out
line
![Page 7: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/7.jpg)
7
One
con
tact
γ
D(E
)
EF
])
()
([
0E
FE
NE
Ef
UE
DdtdN
−−
−=hγ
)(
)(
0FE
Ef
UE
DdE
N−
−= ∫
in-fl
ow:
0)
(f
UE
D−
hγ
out-f
low
:EN
hγ
Dat
ta, Q
uant
um T
rans
port
Ato
m to
Tra
nsis
tor,
Cam
brid
ge U
niv.
Pre
ss, 2
005
![Page 8: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/8.jpg)
8
Two
cont
acts
])
([
])
([
22
11
EE
EN
fE
DN
fE
DdtdN
−+
−=
hh
γγ
in-fl
ow:
11
)(
fU
ED
−hγ
out-f
low
:EN
h1γin
-flow
:2
2)
(f
UE
D−
hγ
out-f
low
:EN
h2γ
D(E
)
γ 1γ 2
EF2
EF1
![Page 9: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/9.jpg)
9
[]2
12
1
21
)(
2f
fU
ED
dEq
I−
+−
=∫
γγ
γγ
h
N=
dE ∫D(E
−U)
γ 1f 1
+γ 2f 2
γ 1+
γ 2
U=UL
+U0(N
−N0)
Two
cont
acts
N
U
U
N
“Poi
sson
”
“Tra
nspo
rt”
Rah
man
, Guo
, Dat
ta, L
unds
trom
, IE
EE
Tra
ns. E
lect
ron
Dev
., p.
189
7 ,2
003
D(E
)
γ 1γ 2
EF2
EF1
![Page 10: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/10.jpg)
10
ε→
H[]
γ→
Γ[] Σ[]
G=ES
−H
−Σ
[]−1
N
[ρ
][H
]
[U]
[Σ1]
[Σ2]
[ΣS]
Mul
tiple
leve
ls
![Page 11: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/11.jpg)
11
Non
equ
ilibriu
m G
reen
’s F
unct
ion
(NE
GF)
Gat
e
mol
ecul
e or
dev
ice
[H]
Σ 1Σ
2
Σ SD
Sf 1
f 2
G=EI
−H
−Σ 1
−Σ
2−
ΣS
[]−1
devi
ceco
ntac
tssc
atte
ring
I D=2q h
T(E)
∫f 1(E)−f 2(E)
()dE
[]
[] π
ρ2)
()
()
()
(2
21
1dE
Ef
EA
Ef
EA ∫
+=
+Γ
=G
G)
(A
2,12,1E
]G
GTrace[
)(
21
+Γ
Γ=
ET
Cha
rge
dens
ity (b
allis
tic)
Cur
rent
][
2,12,1
+1,
2Σ
−Σ
=Γ
i
![Page 12: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/12.jpg)
12
1.In
trodu
ctio
n2.
NE
GF
form
alis
m3.
Sim
ulat
ion
App
roac
h4.
Dev
ice
Ana
lysi
s5.
Sum
mar
y
Out
line
![Page 13: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/13.jpg)
13
Rea
l-spa
ce b
asis
(bal
listic
)
DS
Gat
e
atom
istic
(pZ
orbi
tals
)
c
t
H=
Σ D
ΣS
=∑
+
O
00
00
00
00
][
ττS
S
g
=∑
+]
[0
00
00
00
0
ττD
D
g
O
1]
[−
Σ−
Σ−
−=
DS
rH
EIG
Rec
ursi
ve a
lgor
ithm
for G
r : O
(m3 N
)La
ke e
t al.,
JA
P, 8
1, 7
845,
199
7
(m, 0
) CN
T
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14
Rea
l-spa
ce re
sults
band
ga
p
inte
rfer
ence
2nd
subb
and
Con
fined
sta
tes
Gat
e
n+n+
i
![Page 15: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/15.jpg)
15
Mod
e-sp
ace
appr
oach
(bal
listic
)
c
t
k
t
The qt
hm
ode
=
Nq
q
q
q
q
ub
bu
tt
ub
bu
HO
O
O3
2
1
cqk q
π2=
-Σ S
(1,1
) and
ΣD
(N,N
) an
alyt
ical
ly c
ompu
ted
-C
ompu
tatio
nal c
ost:
O(N
)re
al s
pace
O(m
3 N)
(m,0
) CN
T
![Page 16: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/16.jpg)
16
Mod
e-sp
ace
resu
lts
n+n+
i
2 m
odes
real
spa
ce
Con
duct
ion
band
pro
file
(ON
)
coax
ial G
V
D=0
.4V
d CN
T~1n
mco
axia
l G
coax
ial G
2 m
odes
real
spa
ceco
axia
l G
Gat
e8n
m H
fO2
SiO
2
p++
Si
Pd
Pd
CN
T
![Page 17: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/17.jpg)
17
Trea
tmen
t of M
/CN
T co
ntac
ts
M
CE VE
FE
tα0Bφ
met
allic
tube
ban
d
−≈
∑O
00
0αit
m
:0Bφ
band
dis
cont
inui
ty
![Page 18: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/18.jpg)
18
Trea
tmen
t of M
/CN
T co
ntac
ts
Gat
e
VD=V
G=0
.4V
Cha
rge
trans
fer i
n un
it ce
ll: L
eona
rd e
t al.,
AP
L, 8
1, 4
835,
200
2
Met
alS
met
alD
tunn
elin
g
![Page 19: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/19.jpg)
19
3D P
oiss
on s
olve
r
Gat
e8n
m H
fO2
SiO
2
p++
Si
PdPd
CN
TMet
hod
of m
omen
ts:
∫−
='
)'(
)'(
)(
rdr
rr
Kr
Vv
vv
vv
ρ
Elec
tros
tatic
ker
nel:
for 2
type
s of
die
lect
rics
avai
labl
e in
Ja
ckso
n, C
lass
ical
Ele
ctro
dyna
mic
s, 1
962
)'(
rr
Kv
v−
)'(
rr
Kv
v−
![Page 20: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/20.jpg)
20
Num
eric
al te
chni
ques
give
n n:
---
> U
scf
“Poi
sson
”
give
n U s
cf:
--->
n
trans
port
equa
tion
Itera
teun
tilse
lf-co
nsis
tent
give
n n:
---
> U
scf
Poi
sson
give
n U s
cf:
--->
n
NE
GF
Tran
spor
t
Itera
teun
tilse
lf-co
nsis
tent
-N
on-li
near
Poi
sson
-R
ecur
sive
alg
orith
m fo
r
-G
auss
ian
quad
ratu
refo
r do
ing
inte
gral
-Pa
ralle
l diff
eren
t bia
s po
ints
-~2
0min
for f
ull I
-V o
f a 5
0-nm
C
NTF
ET
1]
[)
(−
∑−
∑−
−=
DS
HEI
EG
![Page 21: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/21.jpg)
21
1.In
trodu
ctio
n2.
NE
GF
form
alis
m3.
Sim
ulat
ion
App
roac
h4.
Dev
ice
Ana
lysi
s5.
Sum
mar
y
Out
line
![Page 22: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/22.jpg)
22
nano
tube
dia
met
er ~
1.7
nm
L ch
~50n
m
Gat
e8n
m H
fO2
SiO
2
p++
Si
PdPd
CN
T
Dev
ice
issu
es
1)C
an w
e m
odel
and
und
erst
and
I-V?
2)H
ow c
lose
to th
e ba
llist
ic li
mit?
3)W
hat i
s th
e ro
le o
f sca
tterin
g?
4)H
ow to
opt
imiz
eI O
N?
5)H
ow to
redu
ce I o
ff?
6)H
ow to
com
pare
to S
i MO
SFE
Ts?
Jave
y et
al,
Nan
o Le
tt., 2
004
![Page 23: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/23.jpg)
23
Mod
elin
g I D
-VG
SB
hei
ght:
φ Bp=
0, d
CN
T~1
.7nm
RS=R
D~1
.7K
Ω
VD=
-0.3
V
expe
rimen
t-0
.2V
-0.1
Vth
eory
![Page 24: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/24.jpg)
24
Two
kind
s of
tran
sist
ors
tunn
elin
gGS
VTE
n+n+
ior p
-
gate
sour
cedr
ain
met
alm
etal
ior p
-
gate
sour
cedr
ain
MO
SFE
TS
BFE
TC
arbo
n na
notu
bes
as S
chot
tky
barr
ier t
rans
isto
rsH
einz
eet
al,
PR
L, 8
9, 1
0680
1,20
02
![Page 25: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/25.jpg)
25
Am
bipo
lar c
ondu
ctio
n (th
in o
xide
)
hole
con
duct
ion
at lo
w V
G
EFD
EFS
EC EV
EFD
EFS
EC
EV
elec
tron
cond
uctio
n at
hig
h V G
log
I D
VG
barri
er th
ickn
ess
set b
yt in
s (g
eom
etric
scr
eeni
ng)
φ bp=
0
![Page 26: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/26.jpg)
26
t ox=
40 n
m
φ Bp=
0
EFS
EFD
EC
EV
opaq
ue b
arrie
r for
el
ectr
on tu
nnel
inng
barri
er th
ickn
ess
set b
yt in
s (g
eom
etric
scr
eeni
ng)
Thic
k ox
ide
Guo
, Dat
ta a
nd L
unds
trom
, IE
EE
Tra
ns. E
D, 5
1, 1
72,
2004
VD=-
0.4V
![Page 27: Jing Guo Department of ECE, University of Florida Gainesville, FL, … · 2005. 8. 21. · Device Simulation for Carbon Nanotube Electronics Jing Guo Department of ECE, University](https://reader034.vdocuments.net/reader034/viewer/2022051919/600bd7a3e283eb3aac73b6b7/html5/thumbnails/27.jpg)
27
How
clo
se to
bal
listic
lim
it?
expe
rimen
tth
eory
(bal
listic
)
SB
hei
ght:
φ Bp=
0, d
CN
T~1
.7nm
, R
S=R
D~1
.7K
Ω
Del
iver
nea
r-ba
llist
ic D
C o
n-cu
rren
t
G
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28
No
surfa
ce ro
ughn
ess
scat
terin
g in
CN
Ts
CN
Tgr
aphe
ne
Phon
on s
catte
ring
dom
inat
es in
CN
TsY
ao, K
ane,
and
Dek
keer
, Phy
s. R
ev. L
ett.,
84,
294
1, 2
000
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29
Pho
non
scat
terin
g in
CN
TsE
kA
P
E
kO
P(in
tra.
)O
P (in
terv
alle
y)
AP
: lon
g m
fp(
~1
µm)
OP
: sho
rt m
fp(
~1
0nm
)
ωh
E
k
ωh
Par
k, R
osen
blat
t, Y
aish
et a
l.,N
ano
Lett.
, 4, 5
17
high
1λhigh2λ
Jave
y, G
uo, P
auls
son
et a
l., P
hys.
Rev
. Let
t., 9
2, 1
0680
4, 2
004
Ky/k
0(K
x=0)
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30
Sm
all e
ffect
of O
P s
catte
ring
E
Pos
ition
, x
OP
/ZB
P e
mis
sion
E FS
E FD
eV16.0
~ωh
conf
irmed
by
a se
para
te M
onte
-Car
lo s
imul
atio
n
Del
iver
nea
r-ba
llist
ic D
C o
n-cu
rren
t
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31
How
clo
se to
the
ballis
tic li
mit?
expe
rimen
t
balli
stic
, φbp
=0
balli
stic
, φbp
=-0.
3V
φB
p= 0
E FS
E FD
zero
SB
stil
l lim
its I D
E V
E FS
E FD
E V
nega
tive
φ Bp
Guo
and
Lun
dstro
m,
IEE
E T
ED
, 49,
1897
, 200
2 (s
ilico
n)
VG=-
0.4V
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32
Impr
ovin
g I O
N:S
calin
g t in
s
8nm
HfO
2
4nm
HfO
2
8nm
HfO
2
4nm
HfO
2
E FS
E FD
barri
er th
ickn
ess
set b
yt in
s (g
eom
etric
scr
eeni
ng)
VG=-
0.4V
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33
Red
uce
I offfo
r thi
n t in
s
d CN
T~1.
7nm
t in
s~8n
m
d CN
T~1.
0nm
t in
s~4n
mV
D=-
0.4V
Eg~
0.8e
V/d
(nm
)
EFS
EFD
elec
tron
leak
age
hole
leak
age
p∆
n∆
2~
~D
gp
neV
E−
∆∆
near
ly tr
ansp
aren
t
smal
l dC
NT
redu
ces
I min
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34
Red
uce
I offus
ing
MO
SFE
T-lik
e st
ruct
ure
elec
tric
al S
/D d
opin
gA
ppen
zelle
ret a
l, P
RL,
200
4
chem
ical
S/D
dop
ing
Che
n et
al.,
IED
M T
ech
Dig
, 200
4
Jave
y et
al.,
Nan
o Le
tt., 2
005
gate
p+p+
I
o-h+
o-h+
Gat
e8n
m H
fO2
10nm
SiO
2
p++
Si, V
bot=
-2.5
V
PdPd
++
++
+
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35
ambi
pola
r SB C
NTF
ETM
OSF
ET-li
ke C
NTF
ET
band
gap
elec
tron
leak
age
negl
igib
le
hole
leak
age
unip
olar
gp
E~
∆
Sup
pres
sed
ambi
pola
r con
duct
ion
Red
uce
I offus
ing
MO
SFE
T-lik
e st
ruct
ure
EFS
EFD
elec
tron
leak
age
hole
leak
age
p∆
n∆
2~
~D
gp
neV
E−
∆∆
EC EV
EFS
EFD
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36
How
to c
ompa
re to
Si M
OS
FET?
source
drain
S
source
drain
Si C
hann
elW
Si M
OSF
ETs
CN
T ar
ray
FETs
Key
dev
ice
met
rics:
I ONI OFF
τ=C GV D
DI ON
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37
τvs
. IO
N/I O
FFte
chni
que
log10ID
V DD
V Glo
g 10
(I ON
/ I O
FF)
τ
subt
hres
hold
τ=C GV D
DI ON
Con
trol o
f VT
shift
s th
e w
indo
w
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38
Com
pare
to 9
0nm
Si M
OS
FETs
90nm
Si n
-MO
S d
ata
from
Ant
onia
dis
and
Nay
feh,
MIT
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39
1.In
trodu
ctio
n2.
NE
GF
form
alis
m3.
Sim
ulat
ion
App
roac
h4.
Dev
ice
Ana
lysi
s5.
Sum
mar
y
Out
line
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40
Sum
mar
y: S
imul
atio
n A
ppro
ach
Qua
ntum
Tra
nspo
rt (N
EGF
form
alis
m)
-Ato
mis
tic d
escr
iptio
n
-Non
-equ
ilibr
ium
tran
spor
t
-Ine
last
ic s
catte
ring
Thre
e di
men
sion
al E
lect
rost
atic
s
-Met
hod
of m
omen
ts
Com
puta
tiona
l tec
hniq
ues
-rec
ursi
ve a
lgor
ithm
-mod
e-sp
ace
appr
oach
-par
alle
l sim
ulat
ion
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41
Sum
mar
y
1)I-V
can
be
mod
eled
and
exp
lain
ed.
2)Th
e C
NTF
ET
deliv
ers
near
-bal
listic
I ON
3)S
calin
g t in
san
d us
ing
high
-κim
prov
es I O
N
4)Th
in t i
nsre
sults
in a
mbi
ploa
rcon
duct
ion
5)U
sing
sm
all d
CN
Ttu
be o
r MO
SFE
T-lik
e st
ruct
ure
supp
ress
es a
mbi
pola
r con
duct
ion
6)Th
e C
NTF
ET
perfo
rman
ce is
pro
mis
ing
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42
Out
look
:
Tran
sist
ors
-3D
ele
ctro
stat
ics
-pho
non
scat
terin
g
-Adv
ance
d tra
nsis
tor s
truct
ures
-AC
cha
ract
eris
tics
New
dev
ices
-CN
T op
toel
ectro
nic
devi
ces
-CN
T-ba
sed
nano
sens
ors