july 29/30darpa-meeting1 technological basis fundamental physics device applications ion channels,...

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July 29/30 DARPA-meeting 1 Technological Basis Technological Basis Fundamental Physics Fundamental Physics Device Applications Device Applications Ion Channels, Carbon Nanotubes, wet/d Ion Channels, Carbon Nanotubes, wet/d

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Page 1: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 1

Technological BasisTechnological BasisTechnological BasisTechnological Basis

Fundamental PhysicsFundamental PhysicsFundamental PhysicsFundamental Physics

Device ApplicationsDevice ApplicationsDevice ApplicationsDevice Applications

Ion Channels, Carbon Nanotubes, wet/dryIon Channels, Carbon Nanotubes, wet/dry

Page 2: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 2

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Technological BasisTechnological Basis

wet/dry/interfacewet/dry/interface

Bio-ChannelsBio-Channels NanotubesNanotubes

The technological basis is provided by nature

The increased knowledge in the chemistry and physics of Ion Channels (location of fixed charges etc.) permits progress in simulation and to learn from nature

Page 3: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 3

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Technological BasisTechnological Basis

NanotubesNanotubes

Synthetic techniques are in infancy

• Laser-ablation (expensive)• Arc-evaporation (MWNT)• CVD in chamberwill give soot to be purified• CVD on chipwill give NTs in desired locations

- Need for control of structure of a single tube

Bio-ChannelsBio-Channels

The technological basis is provided by nature

The increased knowledge in the chemistry and physics of Ion Channels (location of fixed charges etc.) permits progress in simulation and to learn from natureNanotubes grow from CoSi islands

Page 4: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 4

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Technological BasisTechnological Basis

As a self-organized structure, tubes have various symmetry and controllable electronic properties

Bio-ChannelsBio-Channels

The technological basis is provided by nature

The increased knowledge in the chemistry and physics of Ion Channels (location of fixed charges etc.) permits progress in simulation and to learn from nature

NanotubesNanotubes

Synthetic techniques are in infancy

Page 5: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 5

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Technological BasisTechnological Basis

Characterization e.g. by Tunneling Spectroscopy

Bio-ChannelsBio-Channels

The technological basis is provided by nature

The increased knowledge in the chemistry and physics of Ion Channels (location of fixed charges etc.) permits progress in simulation and to learn from nature

As a self-organized structure, tubes have various symmetry and controllable electronic properties

NanotubesNanotubes

Synthetic techniques are in infancy

Page 6: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 6

Technological BasisTechnological BasisTechnological BasisTechnological Basis

Fundamental PhysicsFundamental PhysicsFundamental PhysicsFundamental Physics

Page 7: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 7

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Fundamental PhysicsFundamental Physics

Bio-ChannelsBio-Channels NanotubesNanotubes

Classical vs. Quantum Mechanical Description

• Casimir Forces at nanoscalequantum electrodynamical description - full microscopics vs. continuum theory

pp11

pp22

EE

J.D.van der Waals, 1873. J.D.van der Waals, 1873. F. London, 1930F. London, 1930H.B.G. Casimir, 1949H.B.G. Casimir, 1949

Page 8: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 8

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Fundamental PhysicsFundamental Physics

NanotubesNanotubes

pp11

pp22

EE

Bio-ChannelsBio-Channels

Classical vs. Quantum Mechanical Description

• Casimir Forces at nanoscalequantum electrodynamical description - full microscopics vs. continuum theory

J.D.van der Waals, 1873. J.D.van der Waals, 1873. F. London, 1930F. London, 1930H.B.G. Casimir, 1949H.B.G. Casimir, 1949

Page 9: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 9

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Fundamental PhysicsFundamental Physics

Bio-ChannelsBio-Channels NanotubesNanotubesClassical vs. Quantum Mechanical Description

Multiple scales in modeling• Equations of Continuity

Page 10: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 10

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Fundamental PhysicsFundamental Physics

Bio-ChannelsBio-Channels NanotubesNanotubesClassical vs. Quantum Mechanical Description

Multiple scales in modeling• Equations of Continuity• Monte-Carlo solution of the Boltzmann transport equation• Finite size of the ions !!• Quantum Effects : van der Waals, Casimir, DFT

Page 11: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 11

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Fundamental PhysicsFundamental Physics

NanotubesNanotubes

Classical vs. Quantum Mechanical Description

-3 -2 -1 1 2 3

-3

-2

-1

1

2

3

-6 -4 -2 2 4 6

-3

-2

-1

1

2

3

Bio-ChannelsBio-ChannelsClassical vs. Quantum Mechanical Description

Multiple scales in modeling• Equations of Continuity• Monte-Carlo solution of the Boltzmann transport equation• Finite size of the ions !!• Quantum Effects : van der Waals, Casimir, DFT

Page 12: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 12

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Fundamental PhysicsFundamental Physics

NanotubesNanotubes

Multiple scales in modeling

Classical vs. Quantum Mechanical Description

• Continuum theory of elastic deformationswith Molecular Dynamics for parametrization• Classical electrostaticswith atomistic quantum capaciatnce• van der Waals

Nanotube Electromechanical Switch

0 10 20 30 40z,nm

0

0.2

0.4

0.6

0.8

, e/

nm

Charge Density Profile

Page 13: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 13

Technological BasisTechnological BasisTechnological BasisTechnological Basis

Fundamental PhysicsFundamental PhysicsFundamental PhysicsFundamental Physics

Device ApplicationsDevice ApplicationsDevice ApplicationsDevice Applications

Page 14: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 14

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Device ApplicationsDevice Applications

Bio-ChannelsBio-Channels Nanotube FETsNanotube FETs

High ION/IOFF ratio (approaching infinity)

Operation voltage: low

Device characteristics: slow

Page 15: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 15

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Device ApplicationsDevice Applications

Nanotube FETsNanotube FETs

Significant improvement (105) of ION/IOFF ratio was claimed in 4 years

Best NT-FETs operate as unconventional SB-FET

S.J. Tans, 1998. S.J. Tans, 1998. Ph. Avouris, 1998.Ph. Avouris, 1998.

C. Dekker, 2001. C. Dekker, 2001. Ph. Avouris, 2002.Ph. Avouris, 2002.

Bio-ChannelsBio-Channels

High ION/IOFF ratio (approaching infinity)

Operation voltage : low

Device characteristics : slow

Page 16: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 16

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Device ApplicationsDevice Applications

Nanotube FETsNanotube FETs

Significant improvement (105) of ION/IOFF ratio was claimed in 4 years

Best NT-FETs operate as unconventional SB-FET

S.J. Tans, 1998. S.J. Tans, 1998. Ph. Avouris, 1998.Ph. Avouris, 1998.

C. Dekker, 2001. C. Dekker, 2001. Ph. Avouris, 2002.Ph. Avouris, 2002.

Page 17: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 17

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

Device ApplicationsDevice Applications

Nanotube FETsNanotube FETs

Significant improvement (105) of ION/IOFF ratio was done in 4 years

Best NT-FETs operate as unconventional SB-FET

Sub-threshold slope ??

S.J. Tans, 1998. S.J. Tans, 1998. Ph. Avouris, 1998.Ph. Avouris, 1998.

C. Dekker, 2001. C. Dekker, 2001. Ph. Avouris, 2002.Ph. Avouris, 2002.

High sensitivity to oxygen

Nanotube artificial ion-atom- molecule channels

Page 18: July 29/30DARPA-meeting1 Technological Basis Fundamental Physics Device Applications Ion Channels, Carbon Nanotubes, wet/dry

July 29/30 DARPA-meeting 18

Technological BasisTechnological Basis

Fundamental PhysicsFundamental Physics

Device ApplicationsDevice Applications

ConclusionsConclusions

Powerful multi scale simulation approaches to both Biological Ion Channels and Carbon Nanotubes possible in near future

Both areas can learn from each other; the wet-dry interface being of particular interest

Interesting device opportunities: low power off/on -> 0

molecular transport in dry world